TLG145K
Abstract: TLR145K TLR144K TLR143 TLR143K toshiba suffix TLR146K TLG147K TLR146 TLG143K
Text: TOSHIBA TLG14D K,TLR14D K TOSHIBA LED LAMP TLG143K, TLG144K, TLG145K, TLG147K, TLR140K TLR143K, TLR144K, TLR145K, TLR146K, TLR147K LED LAMP WITH BRACKET MAXIM UM RATINGS Ta= 25°C CHARACTERISTIC Forward Current RED GREEN Reverse Voltage RED Power Dissipation
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TLG14D
TLR14D
TLG143K,
TLG144K,
TLG145K,
TLG147K,
TLR140K
TLR143K,
TLR144K,
TLR145K,
TLG145K
TLR145K
TLR144K
TLR143
TLR143K
toshiba suffix
TLR146K
TLG147K
TLR146
TLG143K
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C 34 F
Abstract: 1SV274 D234
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV274 C A T V T U N IN G . • • • • High Capacitance Ratio : C2V / C25V = 12.5 Typ. Low Series Resistance : rs = 0.6f2 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package
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1SV274
C25V/C28V
470MHz
C 34 F
1SV274
D234
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Untitled
Abstract: No abstract text available
Text: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA4000F VHF-UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Band W id th 700MHz M in. @ 3 dB dow n • Low Noise 4dB (Typ.) @ f = 400MHz • Small Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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TA4000F
700MHz
400MHz
400MHz)
1000pF
IS22I
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature
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1SS315
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D945 TRANSISTOR
Abstract: d945
Text: UC1842A/3 A/4A/5 A UC2842A/3A/4A/5A UC3842A/3A/4A/5A U IM IT R O D E Current Mode PWM Controller DESCRIPTION Low Start Up Current <0.5mA Trimmed Oscillator Discharge Current Automatic Feed Forward Compensation Pulse-by-Pulse Current Limiting Enhanced Load Response Characteristics
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UC1842A/3
UC2842A/3A/4A/5A
UC3842A/3A/4A/5A
UC1842A/3A/4A/5A
UC3842/3/4/5
95VAC
130VA
z/60Hz)
40kHz
100mV
D945 TRANSISTOR
d945
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC4S11F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4S11F 2 INPUT N A N D GATE The TC4S11F is 2-input positive logic NAND gates. Gate output with inverter buffer improve the inputoutput characteristics and even if the load capacitance
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TC4S11F
TC4S11F
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ISS226
Abstract: ISV99 2sk117 ISV128 2sk toshiba 302V marking A3 amplifier 2SK30ATM u marking amplifier
Text: TOSHIBA {DI SCRE TE /O PT O} Sb D E ^ T D T T E S D □□□7103 / Í 9097250 '-L ^ TOSHIBA DI S C R E T E /O P T O 5bC 0 7 T Q 3 D'^. ¿ . c; . . V FET Type Application Electrical characteristic (Ta *= 25°C) V d sx V V * * gdo grd * Ig , I d * (mA) Po(mW)
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2SK208
2SK30ATM
2SK209
2SK210
2SK211
2SK117
2SK161
2SK241
ISV128
ISS226
ISV99
2sk toshiba
302V
marking A3 amplifier
2SK30ATM
u marking amplifier
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TIM1414-4LA-371
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation
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TIM1414-4LA-371
TIM1414-4LA-371
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2SC994
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC994 Unit in mm VHF BANO POWER AMPLIFIER APPLICATIONS. 09.Z9UAX. FEATURES : Output Power '• Po=0.95W Min. ( f=l75MHz, VCC=13.5V, Pi=40mW ) Í¿Q.45 05 .C 8 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING vCBO
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2SC994
l75MHz,
100mA
175MHz,
-30pF
175MHZ
2SC994
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c7805
Abstract: C7812 IR Sensor TK 1836 c7815 7812A UC7915 voltage regulator 7812A features 7812A voltage regulator UC494 UC3704
Text: y lN T E O R A T E D C IR C U ITS UNITRODE Power Supply Controls PWM Performance Chart SWITCHING REGULATOR CONTROL ICs N o te : M o s t s e rie s a v a ila b le s c re e n e d to /8 8 3 B Rev. C. / VOLTAGE MODE PWM’s TYPE PERFORMANCE CHARACTERISTICS / /////tf/
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UC1524/2524/3524
UC1524A/2524A/3524A
UC1525A/2525A/3525A
UC1527A/2527A/3527A
UC1526/2526/3526
UC1526A/2526A/3526A
UC1823/2823/3823
UC1825/2825/3825
UC494
UC494A/UC494AC
c7805
C7812
IR Sensor TK 1836
c7815
7812A
UC7915
voltage regulator 7812A features
7812A voltage regulator
UC3704
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2SC31
Abstract: m15t
Text: 2SC31 22 SILICQN NPN EPITAXIAL PLANAR TYPE t r a n s is t o r T V V H F RF A M P LIF IE R A PP LIC A T IO N S . FEATURES : • High Gain : Gpe = 24dB Typ. (f=200M Hz) • Low Noise : NF = 2.0dB (Typ.) (f=200MHz) • Excellent Forward AGC Characteristics.
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2SC31
200MHz)
2SC3122
50MHz
m15t
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TF1100
Abstract: "IGBT Driver" Driver IGBT GTR TF1202
Text: I/O Interface & D river M odules F2 Type No. • 1 s ÿ Characteristics Package: SIP Unit In mm BVs/AC (V) Width Height Thickness TF1106 AC INPUT V in= 70 ~ 140V , Iout=1 6mA 1500 40 MAX 21 MAX TF1107 DC INPUT V in=12 ~30V , lour=16mA 1500 40 MAX 21 MAX
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TF1106
TF1107
TF1108
TF1100
TF1202
TF1203
TF1204
TF1205
TF1206
TF1207
"IGBT Driver"
Driver IGBT
GTR TF1202
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TIM0910-20
Abstract: No abstract text available
Text: TIM0910-20 FE A TU R E S : • HIGH POWER ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE P 1dB = 43.0 dBm at 9.5 GHz to 10.5GHz ■ HIGH GAIN GldB B 7 0 dB at 9 5 GHz * 10 5 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTIC
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TIM0910-20
2-11C1B)
TIM0910-20
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pnp transistor 800v
Abstract: No abstract text available
Text: 6. Transistor C h a racteristics 6.1. Switching Characteristics In this section, we will look into the transis to r’s switching characteristics. When a pulse is applied to the circuit shown in Figure 1, the resulting base and collector waveforms are as
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TLC2425
Abstract: TLE24251
Text: TLE2425, TLE2425Y PRECISION VIRTUAL GROUNDS SLOSD65B - MARCH 1991 - REVISED AUGUST 1995 Excellent Regulation Characteristics - Output Regulation -4 5 nV Typ at l0 = 0 to -1 0 mA +15 nV Typ at Iq - 0 to +10 mA - Input Regulation = 1.5 ¿iV/V Typ Low-lmpedance Output. . . 0.007512 Tÿp
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TLE2425,
TLE2425Y
SLOSD65B
O-226AA
TLE2425
prec065B
VCM83
20MEG
25KEG
030E3
TLC2425
TLE24251
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2sc5464
Abstract: No abstract text available
Text: T O SH IB A 2SC5464 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5464 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 ie l 2 = 12dB f= lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC5464
2sc5464
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AC551
Abstract: No abstract text available
Text: TOSHIBA TLMM525A1 TOSHIBA LED DO TM ATRIX M ODULE TLMM525A1 1. FEATURES • • • • • 2. Thin-size and light weight High-speed operation-30MHz Superior radiation characteristics Display function equivalent to CRT of a personal computer with a simple interface
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TLMM525A1
operation-30MHz
AC551
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TLCS-90
Abstract: No abstract text available
Text: TO SH IBA TMP90C846 CMOS 8-BIT MICROCONTROLLER TMP90C846F 1. OUTLINE AND CHARACTERISTICS The TMP90C846 is an advanced 8-bit microcontroller developed for application in the control of HDD/FDD high-speed mechanisms. The built-in functions include a high speed A/D converter minimum sampling rate: 400ns @ 10MHz with an external start
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TMP90C846
TMP90C846F
TMP90C846
400ns
10MHz)
44-pin
QFP44-P-1414D)
TMP90C846.
TLCS-90
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2SC3297
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE 2SA1305 POWER AMPLIFIER APPLICATIONS. Unit in mm CAR RADIO AND CAR STEREO OUTPUT STAGE APPLICATIONS. 0 3 .2 ± 0.2 FEATURES: Ytfi . Good Linearity of hpg ^ ♦ Complementary to 2SC3297 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC + 0.25
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2SA1305
2SC3297
2SC3297
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1SS239
Abstract: No abstract text available
Text: SILICON EPITAXIAL SCHO TTKY BARRIER TY P E DIODE C A T V /U H F /V H F MIXER APPLICATIONS. M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Reverse Voltage Forward C urrent Junction Tem perature Storage Tem perature Range Vr Ip Tj Tstg RATING 6 30 125
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1SS239
1SS239
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2SK528
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOS INDUSTRIAL APPLICATIONS Unit in mm 7.0 1 J RATING 2 Vd s x 400 V vgss ±20 V DC Id Pulse idp 4 Drain Power Dissipation (Tc=25°C) Pd Channel Temperature Tch Storage Temperature Range Tstg CHARACTERISTIC
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2SK528
T0-220
a76-ai5
2SK528
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN2C11FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 1 FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U n it in mm 2.1 + 0.1 • Including Two Devices in U S6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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HN2C11FU
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2sc1764
Abstract: No abstract text available
Text: 2SC1764 SILICON NPN EPITAXIAL PLANAR TYPE 2 ~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm FEATURES : . Specified 28V, 28MHz Characteristics : Output Power : Po=80Wpjjp : Minimum Gain : Gpe=14.5dB : Efficiency : ’i'c=40%(Min.)
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2SC1764
30MHz
28MHz
80Wpjjp
-30dB
80WpEP
100pF
6000pF
2sc1764
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F585
Abstract: No abstract text available
Text: February 6, 1997 TIM5964-16L-151 1•RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Pow er at 1dB SYMBOL CONDITION P id B Ta= 25 °C MIN. TYP. MAX. UNIT 41.5 42.5 6.0 7.0 — dBm Com pression Point Pow er G ain at 1dB G id B Com pression Point V d s = 10V
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TIM5964-16L-151
TIM5964-
16L-151
2-16G1B)
F585
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