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    DI9430

    Abstract: No abstract text available
    Text: DI9430 SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SO-8 A 8 6 1 E Min Max A 3.94


    Original
    DI9430 DS11505 DI9430 PDF

    Untitled

    Abstract: No abstract text available
    Text: DI9952 DUAL N & P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SO-8 A 8 6 1 E 3 2 Dim Min


    Original
    DI9952 I9952 DS11509 PDF

    Untitled

    Abstract: No abstract text available
    Text: DI9953 DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · High Cell Density DMOS Technology Lower On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SO-8 A 8 6 1 E Min Max A 3.94


    Original
    DI9953 DS11508 PDF

    LP8M05-23-62

    Abstract: LP8M10-23-50 IR 850nm
    Text: Laser Diode Incorporated 2 Olsen Avenue, Edison, New Jersey 08820 USA Voice: 732-549-9001, Fax: 732-906-1559 Internet: www.laserdiode.com E-mail: [email protected] Pulsed 850nm Instrument Laser Modules Output Powers up to 1W Hermetically Sealed Low Inductance


    Original
    850nm LP8M05-23-62 LP8M10-23-50 IR 850nm PDF