79LV2040
Abstract: 79C0832
Text: 79LV2040 20 Megabit 512K x 40-Bit Low Low Voltage EEPROM MCM FEATURES: DESCRIPTION: • • • • Maxwell Technologies’ 79LV2040 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging
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79LV2040
40-Bit)
79LV2040
79C0832
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79C0832
Abstract: No abstract text available
Text: 79C0832 8 Megabit 256K x 32-Bit EEPROM MCM DESCRIPTION: • • • • Maxwell Technologies’ 79C0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging
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79C0832
32-Bit)
79C0832
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79C0832
Abstract: No abstract text available
Text: 79C0832 8 Megabit 256K x 32-Bit EEPROM MCM DESCRIPTION: • • • • Maxwell Technologies’ 79C0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging
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79C0832
32-Bit)
79C0832
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79C2040
Abstract: No abstract text available
Text: 79C2040B 20 Megabit 512K x 40-Bit EEPROM MCM FEATURES: DESCRIPTION: 512k x 40-bit EEPROM MCM Maxwell Technologies’ 79C2040B multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging
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79C2040B
40-Bit)
40-bit
79C2040B
20Megabyte
79C2040
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79LV2040
Abstract: No abstract text available
Text: 79LV2040 20 Megabit 512K x 40-Bit Low Low Voltage EEPROM MCM FEATURES: DESCRIPTION: • • • • Maxwell Technologies’ 79LV2040 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging
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79LV2040
40-Bit)
79LV2040
79C0832
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79LV2040
Abstract: No abstract text available
Text: 79LV2040 20 Megabit 512K x 40-Bit Low Low Voltage EEPROM MCM FEATURES: DESCRIPTION: • • • • Maxwell Technologies’ 79LV2040 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging
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79LV2040
40-Bit)
79LV2040
79C0832
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Untitled
Abstract: No abstract text available
Text: 79LV0832 8 Megabit 256K x 32-Bit Low Voltage EEPROM MCM DESCRIPTION: • • • • Maxwell Technologies’ 79LV0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging
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79LV0832
32-Bit)
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79LV0832
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79LV0832
Abstract: No abstract text available
Text: 79LV0832 8 Megabit 256K x 32-Bit Low Voltage EEPROM MCM DESCRIPTION: • • • • Maxwell Technologies’ 79LV0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging
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79LV0832
32-Bit)
32-bit
79LV0832
10rdering
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79C0832
Abstract: No abstract text available
Text: 79C0832 8 Megabit 256K x 32-Bit EEPROM MCM DESCRIPTION: • • • • Maxwell Technologies’ 79C0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging
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79C0832
32-Bit)
79C0832
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BZY 40
Abstract: No abstract text available
Text: PRELIMINARY 56F6408 512 Megabit Flash NOR PINOUT WP# Memory Functional Block Diagram FEATURES: DESCRIPTION: • Single Power Supply Operation Maxwell Technologies 56F6408 high density, 3.3V, 512 Megabit Flash Memory device, features a greater than 100Krads Si total dose tolerance,
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56F6408
56F6408
100Krads
BZY 40
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Untitled
Abstract: No abstract text available
Text: 79C0832 8 Megabit 256K x 32-Bit EEPROM MCM DESCRIPTION: • • • • Maxwell Technologies’ 79C0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging
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32-Bit)
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eeprom programmer schematic diagram
Abstract: eeprom programmer schematic 58C1001 HCN58C1001 maxwell diagram 79LV0408 Maxwell Maxwell board balboa 1
Text: Application Note Programming the 4 Megabit EEPROM Part Type: Manufacturer: Document No. : Revision : Date : 79C0408 Maxwell Technologies 1005303 2 Sept. 15, 2003 | Maxwell Technologies | 9244 Balboa Avenue, San Diego, CA 92123, United States | | Phone: +1-858-503-3300 | Fax: +1-858-503-3301 | Web: www.maxwell.com |
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79C0408
eeprom programmer schematic diagram
eeprom programmer schematic
58C1001
HCN58C1001
maxwell diagram
79LV0408
Maxwell
Maxwell board
balboa 1
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79C2040
Abstract: 79C0832
Text: 79C2040 20 Megabit 512K x 40-Bit EEPROM MCM FEATURES: DESCRIPTION: 512k x 40-bit EEPROM MCM Maxwell Technologies’ 79C2040 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging
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79C2040
40-Bit)
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79C0832
Abstract: 79C2040 CE030
Text: 79C2040 20 Megabit 512K x 40-Bit EEPROM MCM FEATURES: DESCRIPTION: 512k x 40-bit EEPROM MCM Maxwell Technologies’ 79C2040 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging
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79C2040
40-Bit)
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79C2040
79C0832
79C0832
CE030
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79C0832
Abstract: 129f1
Text: 79C0832 8 Megabit 256K x 32-Bit EEPROM MCM Logic Diagram DESCRIPTION: • • • • Maxwell Technologies’ 79C0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, depending upon space misssion. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM
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79C0832
32-Bit)
79C0832
129f1
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tp41c
Abstract: 1 amp FET switch TP41A tp5d TP40D TP-5C TP10D TP5A 24SW tp2d
Text: 24SW 24 Channel MOSFET Driver LDX_IN LDX_OUT SS_CMD_X 1 of 24 Switches Memory Logic Diagram FEATURES: DESCRIPTION: • • • • • Maxwell Technologies 24SW multi-chip module MCM 24 channel MOSFET driver uses Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging
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176-pin
24-Channel
tp41c
1 amp FET switch
TP41A
tp5d
TP40D
TP-5C
TP10D
TP5A
24SW
tp2d
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TP41C
Abstract: TP40D TP5D TP41A TP10D tp41c transistor low voltage mosfet switch 3 amp 200 Amp mosfet TP10A fet data book free download
Text: 24SW 24 Channel MOSFET Driver LDX_IN LDX_OUT SS_CMD_X 1 of 24 Switches Memory Logic Diagram FEATURES: DESCRIPTION: • • • • • Maxwell Technologies 24SW multi-chip module MCM 24 channel MOSFET driver uses Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging
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176-pin
24-Channel
TP41C
TP40D
TP5D
TP41A
TP10D
tp41c transistor
low voltage mosfet switch 3 amp
200 Amp mosfet
TP10A
fet data book free download
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Untitled
Abstract: No abstract text available
Text: 69F1608 128 Megabit 16M x 8-Bit Flash Memory Module FEATURES: DESCRIPTION: • Single 5.0 V supply Maxwell Technologies’ 69F1608 high-performance flash memory is a 16M x 8-bit NAND Flash Memory with a spare 128K (131,072) x 8-bit. A program operation programs the 528-byte
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69F1608
69F1608
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69F1608â
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69F1608
Abstract: No abstract text available
Text: 69F1608 128 Megabit 16M x 8-Bit Flash Memory Module FEATURES: DESCRIPTION: • Single 5.0 V supply Maxwell Technologies’ 69F1608 high-performance flash memory is a 16M x 8-bit NAND Flash Memory with a spare 128K (131,072) x 8-bit. A program operation programs the 528-byte
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69F1608
69F1608
528-byte
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79LV0832
Abstract: Maxwell 79lv0832
Text: 79LV0832 Low Voltage 8 Megabit 256K x 32-Bit EEPROM MCM CE1 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 ADD CNTL CE2 I/O0-7 I/O8-15 I/016-23 I/O24-31 Memory Logic Diagram FEATURES: DESCRIPTION: • • • • Maxwell Technologies’ 79LV0832 multi-chip module (MCM)
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32-Bit)
I/016-23
79LV0832
32-bit
Maxwell 79lv0832
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"NAND Flash"
Abstract: voice activated recorder circuit 8bit nand flash flash memory 16M 69F1608
Text: 69F1608 128 Megabit 16M x 8-Bit Flash Memory Module FEATURES: DESCRIPTION: • Single 5.0 V supply Maxwell Technologies’ 69F1608 high-performance flash memory is a 16M x 8-bit NAND Flash Memory with a spare 128K (131,072) x 8-bit. A program operation programs the 528-byte
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69F1608
69F1608
528-byte
"NAND Flash"
voice activated recorder circuit
8bit nand flash
flash memory 16M
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69F1608
Abstract: No abstract text available
Text: 69F1608 128 Megabit 16M x 8-Bit Flash Memory Module FEATURES: DESCRIPTION: • Single 5.0 V supply Maxwell Technologies’ 69F1608 high-performance flash memory is a 16M x 8-bit NAND Flash Memory with a spare 128K (131,072) x 8-bit. A program operation programs the 528-byte
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69F1608
69F1608
528-byte
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Untitled
Abstract: No abstract text available
Text: 29F0408 32 Megabit 4M x 8-Bit Flash Memory FEATURES: DESCRIPTION: • Single 5.0 V supply • Excellent Single Event Effect • - SELTH: > 60 MeV/mg/cm2 Maxwell Technologies’ 29F0408 high-performance flash memory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash
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29F0408
528-Byte
29F0408
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Untitled
Abstract: No abstract text available
Text: 29F0408 32 Megabit 4M x 8-Bit Flash Memory FEATURES: DESCRIPTION: • Single 5.0 V supply • Excellent Single Event Effect • - SELTH: > 60 MeV/mg/cm2 Maxwell Technologies’ 29F0408 high-performance flash memory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash
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29F0408
29F0408
528-byte
29F0408cement
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