SHH-1M1608-121
Abstract: 401J SHU-1H4516-500J 1m1005 1S1005 SHB-1M1005-400 SHB-1M1005-600 SHB-1M1005-800 chipe array 202J
Text: Chip Ferrite Beads. 1. Effective for suppressing noise at high frequency, form several MHz to several hundreds MHz. 2. Chip type is suited for preventing the abnormal oscillation from high frequency amplifying circuits. 3. Terminal electrode has excellent solder heat resistance for soldering.
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instrument15
SHH-1H4516-600J
SHH-1H4516-121J
SHH-1T4516-121J
SHH-1M4516-132J
SHH-1B5432-132J
SHH-1M5759-401J
SHU-1M2012-600J
SHU-1M2012-121J
SHU-1S3216-500J
SHH-1M1608-121
401J
SHU-1H4516-500J
1m1005
1S1005
SHB-1M1005-400
SHB-1M1005-600
SHB-1M1005-800
chipe array
202J
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29F002T
Abstract: 29F002
Text: ADVANCED INFORMATION MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%
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MX29F002/002N
55/70/90/120ns
16K-Byte
32K-Byte
64K-Byte
29F002T/B-45
PM0547
29F002T
29F002
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Untitled
Abstract: No abstract text available
Text: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%
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MX29F002/002N
55/70/90/120ns
16K-Byte
32K-Byte
64K-Byte
JUN/11/2002
PM0547
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29F002T
Abstract: No abstract text available
Text: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%
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MX29F002/002N
55/70/90/120ns
16K-Byte
32K-Byte
64K-Byte
JUN/14/2001
PM0547
29F002T
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MX29F002BQC-70G
Abstract: 29F002T
Text: MX29F002/002N T/B 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%
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MX29F002/002N
55/70/90/120ns
16K-Byte
32K-Byte
64K-Byte
PM0547
MX29F002BQC-70G
29F002T
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Untitled
Abstract: No abstract text available
Text: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%
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MX29F002/002N
55/70/90/120ns
16K-Byte
32K-Byte
64K-Byte
30ms--
80us--
100us
PM0547
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f82c235
Abstract: a19t 82C765 82C235 1NTC0 LG lcd tv tuner 80286 microprocessor schematics 82C601 82c710 sues 1132
Text: 82C235 System Controller $ ' >"•' fipÉlI «V M M V // S A V A A >V * A * ^ÿV IV fWJ V ÿ . # v . . v K M ^ 0v . 4 v w v v W/ s Single CHIP 286 AT m fÊ P R E L I M I / N A R Y CH!PS* Copyright Nolle* Manual Copyright C 1991, CHIPS aad Technologies. Ine.
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82C235
C1991,
-MEMCS16
82C235
408-434-060Q
f82c235
a19t
82C765
1NTC0
LG lcd tv tuner
80286 microprocessor schematics
82C601
82c710
sues 1132
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ITE 8721
Abstract: fnd 503 7-segment TAA 2761 A 486 motherboard schematic 3860S 486dx isa bios pin assignment RAS 0510 cxd 9897 tn ti77 k244
Text: ISA/486 C H |p g . CepyTlgtt N ette S o t t r a e C o p y ñ f tt O 1962, a * « * d T e d » a i e s i e * . l w x M t o n i I C o p y r i i h t O 1992 . Q ñ p » » d T c c t n o f a p B » , ! ^ . A B SIduR am i Poned ib UJ5A. Tw dw u U t h w lw lgim iil
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746n
Abstract: No abstract text available
Text: TE XA S IN ST R {A S I C / M E M O R V > 77 De | 0 ^ 1 7 2 5 0040^3 Q TM S47C512 65,536-WORD BY 8-BIT READ-ONLY M EM O RY ADVANCE INFORMATION NOVEMBER 1 9 8 5 65,536 X 8 Organization • Fully Static No Clocks, No Refresh N PACKAGE {TOP VIEW) All Inputs and Outputs TTL and CMOS
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S47C512
536-WORD
TMS47C512-20
TMS47C512-25
TMS47C512-30
746n
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METRIX
Abstract: MC29100LC MC821 MC82100LC MC82101LC IMRM
Text: MC29100/MC82100 MC29101/MC82101 M O TO R O LA D U A L M A R K ED Product Preview T TL F IE L D PROGRAM M ABLE LOGIC A R R A Y F IE L D PROG RAM M ABLE LOGIC A R R A Y (1 6 X 8 X 4 8 F P L A ) T h e M C 2 9 10 0 /M C 8 2 100 (th re e -s ta te o u tp u ts } and th e M C 2 9 1 0 1 /
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MC29100/MC82100
MC29101/
MC82101
16-input
MC29100
MC29101
MC82101)
MC29100/
MC29100)
METRIX
MC29100LC
MC821
MC82100LC
MC82101LC
IMRM
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TMS4732
Abstract: No abstract text available
Text: TMS4732 4096 W0RD BY 8-BIT READ-ONLY MEMORY M AY 1977 - 4 0 9 6 X 8 Organization R E V IS E D N O V E M B E R 1 9 8 5 N PAC KAG E ITOP VIEW All Inputs and Outputs TTL Compatible A7 H 1 v J 2 4 : A6 : 2 23 A5 c 3 22 A4 : 4 21 20 : A3 : 5 A2 c 6 19 A1 c 7 18
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TMS4732
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tms*1024
Abstract: 198S 74LS
Text: TMS47C1024 131.072-W0RD BY 8-BIT READ-ONLY MEMORY ADVANCE INFORMATION NOVEMBER 198S N PACKAGE • 13 1 ,0 7 2 X 8 Organization • Fully Static No Clocks. No Refresh} (TOP VIEW A15 C A12 C A7 E A6C A5 C A4 C A3 C A2C A1Ë AO C Q1 C All Inputs and Outputs TTL and CMOS
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TMS47C1024
072-W0RD
TMS47C1024-20
TMS47C1024-25
TMS47C1024-30
TMS47C1024
576-bit
tms*1024
198S
74LS
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IS28F010
Abstract: IS28F010-45PL
Text: ISSI I S 2 8 F 0 1 0 131,072 x 8 CMOS FLASH MEMORY p r e l im in a r y NOVEMBER 1995 FEATURES • Flash electrica l bu lk chip-e ra se - O ne seco nd typica l chip-e ra se • C M O S low p o w e r con sum p tion - 30 m A m axim um active curre nt - 1 0 0 |iA m axim um sta n d b y curre nt
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IS28F01Q
32-pin
IS28F010-120PL
IS28F010-120T
IS28F010-45WI
600-mil
IS28F010-45PLI
IS28F010-45TI
IS28F010
IS28F010-45PL
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74LS
Abstract: No abstract text available
Text: TMS47C512 65,536-WORD BY 8-BIT READ-ONLY MEMORY ADVANCE INFORMATION NOVEMBER 1985 6 5 ,5 3 6 X 8 Organization N PACKAGE 1TOP VIEW Fully S tatic No Clocks, No Refresh) A15Ë 1 LJ28 INcc A12C 2 27 JA14 A7 C 3 26 ÏA13 A6 C 4 25 I] A8 A5 C 5 24 UA9 A4C 6 23 ] A11
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TMS47C512
536-WORD
TMS47C512-20
TMS47C512-25
TMS47C512-30
TMS47C512
288-bit
74LS
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Untitled
Abstract: No abstract text available
Text: ISSI I S 2 8 F 0 1 0 _ 131,072 x 8 CMOS FLASH MEMORY PRELIMINARY NOVEMBER 1995 FEATURES • Flash electrica l bu lk chip-e ra se - O ne seco nd typica l chip-e ra se H igh pe rfo rm an ce - 45 ns m axim um access tim e • C M O S low p o w e r con sum p tion
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32-pin
IS28F010-45WI
IS28F010-45PLI
IS28F010-45TI
600-mll
IS28F010-70WI
IS28F010-70PLI
IS28F010-70TI
600-mil
IS28F010-90WI
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A21S
Abstract: ti 2732a s45d 409B 74LS 645q Bipolar PROM programming 74S A31s
Text: TMS2332 4096-W0RD BY 8-BIT READ-ONLY MEMORY SEPTEMBER 1 9 8 4 - 4 0 9 6 X 8 Organization REVISED NOVEMBER 1 9 8 5 N PAC KAG E TOP VIEW All Inputs and Outputs TTL Compatible A7C A6Q A5£ A4C A 3 [j A2C A id AOC Fully Static (No Clocks. No Refresh) Single 5 -V Power Supply
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TMS2332
TMS2332-15
TMS2332-20
TMS2332-25
A21S
ti 2732a
s45d
409B
74LS
645q
Bipolar PROM programming 74S
A31s
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CA3300
Abstract: CA3306 Zen Research
Text: CA3306, CA3306A, CA3306C u A p p ie S E M I C O N D U C T O R 6-Bit, 15 MSPS, Flash A/D Converters A ug ust 1997 Description Features • CMOS Low Power with Video Speed T y p The GA3306 family are CMOS parallel (FLASH) analog-to-digital converters designed for applications dem anding both low power
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CA3306,
CA3306A,
CA3306C
GA3306
15MHz,
CA3306
CA3300
Zen Research
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TMS4732
Abstract: TMS2532 74LS si2120
Text: TMS4732 4096-WORD BY 8-BIT READ-ONLY MEMORY M AY 1977 - 4096 X 8 Organization N • All Inputs and Outputs TTL Compatible • Fully Static No Clocks, No Refresh • Single 5 -V Power Supply • Maxim um Access Tim e from Address T M S 4 7 3 2 -1 5 1 5 0 ns
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TMS4732
4096-WORD
TMS4732-15
TMS4732-20
TMS4732-25
TMS2532
TMS4732
74LS
si2120
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Untitled
Abstract: No abstract text available
Text: HD66320T TFT Driver (64-level Gray Scale Driver for High-Quality TFT Liquid Crystal Display) HITACHI Preliminary May 1995 The HD66320T, a source driver LSI, drives an active matrix LCD panel having TFTs (thin film transistor) in the picture element (pixel) area. The LSI receives 6-bit digital display data per pixel and
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HD66320T
64-level
HD66320T,
-------------------------------------25kQ
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A5 KNA
Abstract: No abstract text available
Text: W29C102 f t inbond V n iU/ Electronics Corp. 64K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C1Q2 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt Vpp is
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W29C102
W29C1Q2
12-volt
W29C102
A5 KNA
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Untitled
Abstract: No abstract text available
Text: M O S E L V IT E L IC V29C51001T/V29C51001B 1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V29C51001T/V29C51001B is a high speed 131,072 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt
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V29C51001T/V29C51001B
128Kx8-bit
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Untitled
Abstract: No abstract text available
Text: M O S E L V IT E L IC V29C51000T/V29C51000B 512K B IT 65,536 x 8 BIT 5 VOLT CMOS FLASH MEMORY PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V29C51000T/V29C51000B is a high speed 65,536 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt
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V29C51000T/V29C51000B
64Kx8-bit
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toba
Abstract: CA324E W6022
Text: O A 'i'ilß HARRIS M M S E M I C O N D U C T O R CMOS Video Speed, 8-Bit, Flash A/D Converter A ug ust 1997 Features • Description CMOS Low Power with SOS Speed Typ . 150mW • Parallel Conversion Technique • 15MHz Sampling Rate (Conversion T im e ). 67ns
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150mW
500ns.
toba
CA324E
W6022
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IC1232
Abstract: c4742 c1813 C4722 MC2212 C1B25 C2792 C-829 capacitor c829 capacitor 1C9
Text: KEMET CERAMIC CHIP/STANDARD FEATURES • • • • • Twelve chip sizes COG NPO , X7R, Z5U and Y5V Dielectrics 10, 16, 25, 50, 100 and 200 Volts Standard End Metalization-tin-plated nickel barrier Available Capacitance Tolerance: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1 %; ±2%; ±3%; ±5%; ±10%;
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EIA481
IEC286-6
008tape
IL-C-55681
IC1232
c4742
c1813
C4722
MC2212
C1B25
C2792
C-829
capacitor c829
capacitor 1C9
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