mdd 2605
Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
Text: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900
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element-14
element14
mdd 2605
HCPL 1458 8 pin opto
KS0108 128X64 graphical LCD
mdd 2601
transistor chn 952
hitachi INVC 618
Data Vision P135
H4 led smd headlight bulb
transistor CHN 64 946
transistor chn 943
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chn 627
Abstract: chn 810 CHN 725 diode chn 610 chn 630 b244a k 3511 CHN 420 CHN 727
Text: 16-BIT SYNCHRONOUS 2:1 MUX/DEMUX SWITCH IDT74FST163232 ADVANCE INFORMATION In te g ra te d D evice T echnology, Inc. driver. These devices connect input and output ports through an n-channel FET. When the gate-to-source junction of this FET is adequately forward-biased the device conducts and
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16-BIT
IDT74FST163232
FST163xxx
MIL-STD-883,
200pF,
FST163232
48-Pin
56-Pin
chn 627
chn 810
CHN 725 diode
chn 610
chn 630
b244a
k 3511
CHN 420
CHN 727
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BAV46
Abstract: bat59 Pin connection of bk 1085 BAT39 BAT52 BAV72 BAT10 BAW96 BAV71 BAT50R
Text: Microwave solid state mixer diodes M axim um Operating Frequency GHz Type No. book 1 part 8 Typical Noise Figure (dB) Typical Impedance 8.5 750 O perating Temperature Z if Drawing i'e fe re n c e O u tlin e <oc> (Í2) GERMANIUM POINT CONTACT 40 AAY34 - 5 5 t o +100
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AAY34
S0D-42
BAT10
SAT11
BAT39
CV7762)
BAT39A
OD-42
BAT50R
SO-26
BAV46
bat59
Pin connection of bk 1085
BAT39
BAT52
BAV72
BAW96
BAV71
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DIODO LN4148
Abstract: A2 diodo zener diodo zener 5.1 B2 diodo 1n4148 diodo s4 diodo s4 81 6.8 B2 diodo a52 zener diode diodo 72 DIODO LED
Text: Microminiature devices diodes book 1 part 3 Outline SO T-23 Type No. | | » Q £ BAV70 X4 BAW66 X5 BAV99 X6 Description Common cathode double diodo Common anode double diodo Two diodes i n series intended for high speed switching. Vrrm Ifrm Max. Reverse Recovery Time, t rr
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OT-23
BAV70
BAV99
1N4148
200mW
OT-23
BZX84
h--22->
crt6-25
DIODO LN4148
A2 diodo zener
diodo zener 5.1 B2
diodo 1n4148
diodo s4
diodo s4 81
6.8 B2 diodo
a52 zener diode
diodo 72
DIODO LED
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OA90 diode
Abstract: OA90 germanium diode oa47 diode OA95 diode diode aa119 Germanium Diode OA91 DIODE OA95 AA119 DIODE OA90 OA91
Text: Diodes Milliard diodes are supplied bandoliered. Exceptions are noted below. Bandolier packing DO-7 D O -35 SOD-17 7000 9000 9000 F o r fu rth e r details conta ct M illia rd House. germanium point contact diodes book 1 part 3 Outline DO-7 Drawing reference D1
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DO-35
OD-17
AA119
h--22->
crt6-25
OA90 diode
OA90 germanium diode
oa47 diode
OA95 diode
diode aa119
Germanium Diode OA91
DIODE OA95
DIODE OA90
OA91
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BZX87
Abstract: zener bzx87 c5v8 zener
Text: Silicon voltage regulator diodes low power cont. book 1 part 3 Outline SOD—51 Drawing reference V 1 ,5 W (Tamt)*= 25°C) Ì 5% voltage toi «rance Type No. BZX87 Nom. Zerter Voltage (V) Min. Vottage (V) —C5V1 -CSV6 5.1 5.6 4.8 5.2 5.8 6.4 Typ. Temp.
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BZX87
h--22->
crt6-25
BZX87
zener bzx87
c5v8 zener
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bf4 0c
Abstract: bridge RECTIFIER GI OSB9210 OSM9410 OSM9510 OSS9210 08M9110 SO-26 BB5 SOT23
Text: Silicon rectifier diodes and bridge m odules high voltage devices Type No. •f AV O SS9110- 3 t o -30 3,5 A (6 A in oil) OSS9210 - 3 t o <30 5A (20 A in oil) O SS9410- 3 t o -30 1 0A (30 A. in oil) O S B 9H O - 4 t o -30 7A (12 A in oil) OSB9210 - 4 t o -30
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OSS9110-
to-30
OSS9210
OSS9410-
OSB9210
OSB9410-
bf4 0c
bridge RECTIFIER GI
OSM9410
OSM9510
08M9110
SO-26
BB5 SOT23
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BY223
Abstract: BY277 BYX50-200R BYX50-200 bridge RECTIFIER GI by277 750r diode BY223 600R 800R BYW19
Text: Silicon rectifier diodes and bridge m odules fast recovery rectifier diodes Type No. O utline Drawing reference A (V) (V) (A ) SOD-38 5* 1500 1500 10 20 SOD-38 7 800 1000 800 800 20 7 50 100 150 50 100 150 DO-4 B1 7 200 300 350 600 SOD-38 7 600R 750R SOD-38
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BY223
OD-38
BYW19
BYW29
tBYX71
S0D38
BY277
t1N3889
BY223
BYX50-200R
BYX50-200
bridge RECTIFIER GI
by277 750r
diode BY223
600R
800R
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BZX93
Abstract: BZX90 BY409 BYX35 BY209 BZX91 BY209 A high voltage rectifier diode 1N82S BZX90 3.3
Text: Diodes low power high voltage diodes I fiav max. Tamb = 3 5°C T oh= 50 C <mA) m A) V rwm max. <kV> Type No. Description 2.5 - B Y182 12 E.H .T. rectifiers in plastic envelopes. 2.5 - B Y 209 11.5 E .H .T. soft-recovery re ctifie r diode. 2,5 - B Y 409
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BY209
BY409
BYX35
BYX90
BYX91-90K
-120K
-150K
h--22->
crt6-25
BZX93
BZX90
BZX91
BY209 A
high voltage rectifier diode
1N82S
BZX90 3.3
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CV8805
Abstract: BY206 diode CV8308 SOD-18 BYX94 BY227 diode BY207 Diode 1N4007 DO-7 Rectifier Diode BYX10 diode BY227
Text: Diodes silicon picoampere diode book 1 part 3 and 4 BAV45 Description I frm m A < i Type No. E xtrem ely lo w leakage and lo w capacitance diode. O utline T O —18. Dwg. ref. A T 5 35 I r at V r 5 (pA ) 100 I r at V r 20 (pA ) max. lF (m A) (V ) Vf at I f
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BAV45
BY206
DO-14
BY207
h--22->
crt6-25
CV8805
BY206 diode
CV8308
SOD-18
BYX94
BY227 diode
Diode 1N4007 DO-7 Rectifier Diode
BYX10
diode BY227
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byx22
Abstract: byx22 1200 76F7 BYX42-600R bridge RECTIFIER GI 600R BYX42
Text: Silicon rectifier diodes and bridge modules book 1 part 4 general purpose rectifiers RA TING S O utline Type No. § B Y X 22 - Drawing reference 200 400 600 800 DO-1 A3 I r a V V rrm V rwm I frm Ifs m 1) A ) 1.4 (V) (V) (A) (A ) 200 200 400 600 800 15 200
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BYX22
tBYX49
SOO-38
tBYX38
tBYX98
tBYX72
OD-38
tBYX42
h--22->
crt6-25
byx22 1200
76F7
BYX42-600R
bridge RECTIFIER GI
600R
BYX42
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BZX61
Abstract: BZX81 zener diode bzy88 BZY88 bs9305n041 diode zener BZX61 C 10 1N748A 1N759A
Text: Silicon voltage regulator diodes low power corIt. 400mW Type Nom. Zener No. Voltage ¡BZY88 (cont) (V) 10 book 1 iDart Min. Voltage (VI Measured at Test lz Max. Voltage (V) 10.6 25 +7.0 5 2.5 7 11.6 25 +8.7 5 2.5 7 Max. Slope Resistance (ft) Typ. Temp. Coefficient
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400mW
BZY88
h--22->
crt6-25
BZX61
BZX81
zener diode bzy88
BZY88
bs9305n041
diode zener BZX61 C 10
1N748A
1N759A
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BZY93
Abstract: BZY91R BZX70 c27 BZY93 series BZW86 BS3934
Text: Silicon voltage regulator diodes medium to high power book 1 part 4 Voltage toterance % 5 5 5 IZRM PZSM A W •C 3-5 20 175 DO-1 5 100 175 DO-1 5 100 150 SOD u p l° T amb Operating voltage A2 A2 B2Y95- 6.8 20 22 24 27 30 5C> mA C7V5 C8V2 C9V1 _C 10 5 400
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OD-18
OD-38
h--22->
crt6-25
BZY93
BZY91R
BZX70 c27
BZY93 series
BZW86
BS3934
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C5VI ezx79
Abstract: C9VI C7V6 bs9305n041 zener c7v6 C5VI BS9305 BZX79 BZY88 0B8 diode zener
Text: Silicon voltage regulator diodes low pow er book 1 part 3 400mW Tamb= so°c ± 5%voltage tolerance. Outline DO-35 Drawing reference H Measured at Test I Max. Voltage <V> Typ. Temp. Coefficient (mV/°C) Test lz (m A) Max I r at V r (V» Type No. B2X79 Nom. Zener
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400mW
DO-35
BZX79
h--22->
crt6-25
C5VI ezx79
C9VI
C7V6
bs9305n041
zener c7v6
C5VI
BS9305
BZY88
0B8 diode zener
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DIODE BZW70
Abstract: SOD-18 bzw70 BZW91 BZW70 33 BZW86 SOD-51 BZW70/24
Text: Silicon surge suppressor diodes selection guide book 1 part 4 S ta n d -o ff v o lta g e V sq pulse 6.2 7.5 8.2 - P o la rity 40QW BZW70 SO D -18 Norm. 5kW BZW91 DO-5 Both D O -30 Both 13kW BZW86 N orm al p o la rity = ca th o de to stu d ; reverse p o la rity (R ) = a no de to stud.
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BZW70
OD-18
BZW91
BZW86
DO-30
h--22->
crt6-25
DIODE BZW70
SOD-18
BZW70 33
BZW86
SOD-51
BZW70/24
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CHN 725 diode
Abstract: No abstract text available
Text: 20-BIT BUS SWITCH IDT7 4 FST32X L384 In te g r a te d D e v i z e T e c h n o lo g y , î i c . isolating two ports without providing any inherent current sink or source capability. Thus they generate little or no noise of their own while providing a low resistance path for an external
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20-BIT
FST32X
FST32XL384
MIL-STD-883,
200pF,
48-Pin
56-Pin
CHN 725 diode
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chn 810
Abstract: chn 825
Text: 20-BIT BUS SWITCH IDT74 FST32X L2384 In te g r a te d D e v i z e T e c h n o lo g y , î i c . isolating two ports without providing any inherent current sink or source capability. Thus they generate little or no noise of their own while providing a low resistance path for an external
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20-BIT
IDT74
FST32X
L2384
FST32XL2384
MIL-STD-883,
200pF,
48-Pin
56-Pin
chn 810
chn 825
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BB106
Abstract: BA280 BB205B BB205 diode ba280 BB205G BA102 sod-23 SOD-52 DIODE BA243
Text: Diodes book 1 part 3 silicon whiskerless diodes Type No. £ Description 3 O Max. Reverse Recovery Tim e a c f a V rrm I frm Ir avi V (m A ) (m A | Cdmax V f (pF) (V ) m ax a t Ip trr If <mAl (ns) (m A ) Vr IV ) Hl ( f i) fa {m A) BA314 Low voltage stabiliser
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BA314
DO-35
BA316
BA317
BA318
BAV10
BAV18
BAV19
BB106
BA280
BB205B
BB205
diode ba280
BB205G
BA102
sod-23
SOD-52
DIODE BA243
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AZ2A
Abstract: No abstract text available
Text: 24-BIT BUS EXCHANGE SWITCH IDT74FST163213 PRODUCT PREVIEW In te g ra te d D evice T echnology, Inc. or source capability. Thus they generate little or no noise of their own while providing a low resistance path for an external driver. These devices connect input and output ports through
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24-BIT
IDT74FST163213
FST163xxx
MIL-STD-883,
200pF,
FST163213
TM-20T0
46B5771
00E111S
AZ2A
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Untitled
Abstract: No abstract text available
Text: FAST CMOS 1 8 -BIT RE GI S T E R E D TR A N S C E I V E R IDT54/74FCT1 6500AT/CT/ET IDT54/74FCT162500AT/CT/ET bit registered transceivers are built using advanced dual metal CM O S technology. These high-speed, low-pow er 18-bit reg • C o m m o n features:
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IDT54/74FCT1
6500AT/CT/ET
IDT54/74FCT162500AT/CT/ET
18-bit
16500AT
1650OCT
16500ET
162500AT
162500C
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amcc q1300t
Abstract: Q3500T Q1300T Q5000T schematic of TTL XOR Gates ebe switches q5000 ECL100K ECL10K K 4080
Text: Single Cop; PRELIMINARY DEVICE SPECIFICATION W it h '- e a J9 Q M C R O C IR C U I T S C O R P O R A T I O N Q5000 SERIES ECL/TTL LOGIC ARRAYS O DESCRIPTION The A M C C Q 5000 Series of log ic arrays is co m p rise d of five p ro d u cts ranging in density from 1300 to 5000
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Q5000
800MHz.
/D1003-0587
amcc q1300t
Q3500T
Q1300T
Q5000T
schematic of TTL XOR Gates
ebe switches
ECL100K
ECL10K
K 4080
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CHN 623 Diodes
Abstract: AD623
Text: ANALO G DEVICES Single Supply, Rail-to-Rail, Low Cost Instrumentation Anpl if ier AD623 FEATURES Easy to Use H ig h e r P erform ance th a n D iscrete Design S in g le and Dual S u p p ly O p e ra tio n R ail-to-R ail O u tp u t S w in g In p u t V o lta g e Range E xtends 150 m V B elow G round
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AD623A)
AD623B)
CHN 623 Diodes
AD623
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LM 7432
Abstract: or ic 7432 CHN 625 diode
Text: uTECHNOLOGY u m _LTC1066-1 14-Bit DC A ccurate ^Clock-Tunable, 8th Order Elliptic . / or Linear Phase Lowpass Filter F tn T U IK S D € S C R IP T IO n • DC Gain Linearity: 14 Bits ■ Maximum DC Offset: ±1.5mV ■ DC Offset TempCo: 7|oV/°C
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80kHz
120kHz
500MQ
14-Bit
LTC1066-1
18-Lead
LM 7432
or ic 7432
CHN 625 diode
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k3882
Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Text: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d
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