CI 3060 PT Search Results

CI 3060 PT Result Highlights (5)

Part	Manufacturer	Description
XAL7030-601MEC	Coilcraft Inc	General Purpose Inductor, 0.6uH, 20%, 1 Element, Composite-Core, SMD, 3030, CHIP, 3030, HALOGEN FREE AND ROHS COMPLIANT
XAL5030-601MEB	Coilcraft Inc	General Purpose Inductor, 0.6uH, 20%, 1 Element, Composite-Core, SMD, 2221, CHIP, 2221, HALOGEN FREE AND ROHS COMPLIANT
XAL7030-601MEB	Coilcraft Inc	General Purpose Inductor, 0.6uH, 20%, 1 Element, Composite-Core, SMD, 3030, CHIP, 3030, HALOGEN FREE AND ROHS COMPLIANT
XAL5030-601MEC	Coilcraft Inc	General Purpose Inductor, 0.6uH, 20%, 1 Element, Composite-Core, SMD, 2221, CHIP, 2221, HALOGEN FREE AND ROHS COMPLIANT
XAL5030-601	Coilcraft Inc	Power inductor, shielded, 20% tol, SMT, RoHS, halogen-free

CI 3060 PT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MKT .22K 250V X2 Abstract: A66EAK CRT TCL COLOUR TV SCHEMATIC DIAGRAM CRT TCL-2027u COLOUR TV SCHEMATIC DIAGRAM free CRT COLOUR TV SCHEMATIC DIAGRAM schematic diagram crt tv super general CRT - COLOUR TV SCHEMATIC DIAGRAM allen bradley potentiometer type j 1k TDA4870 Philips PR02 Text: APPLICATION NOTE Application of the TDA6120 wideband video output amplifier AN96073 Philips Semiconductors Philips Semiconductors TDA6120Q Wideband video output amplifier Application Note	Original	PDF	TDA6120 AN96073 TDA6120Q TDA6120Q TDA4780 TDA6120Q. 100Vpp, MKT .22K 250V X2 A66EAK CRT TCL COLOUR TV SCHEMATIC DIAGRAM CRT TCL-2027u COLOUR TV SCHEMATIC DIAGRAM free CRT COLOUR TV SCHEMATIC DIAGRAM schematic diagram crt tv super general CRT - COLOUR TV SCHEMATIC DIAGRAM allen bradley potentiometer type j 1k TDA4870 Philips PR02
Untitled Abstract: No abstract text available Text: PD - 96410 AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • Low VCE ON Trench IGBT Technology IC(Nominal) = 75A Low switching losses	Original	PDF	AUIRGP4066D1 AUIRGP4066D1-E
auirgp4066d1 Abstract: AUIRGP4066 AUP4066D1 auirgp4066d1-e Text: PD - 96410 AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • • • VCES = 600V Low VCE ON Trench IGBT Technology IC(Nominal) = 75A Low switching losses	Original	PDF	AUIRGP4066D1 AUIRGP4066D1-E AUIRGP4066 AUP4066D1 auirgp4066d1-e
Untitled Abstract: No abstract text available Text: AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE ON Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C C VCES = 600V IC(Nominal) = 75A	Original	PDF	AUIRGP4066D1 AUIRGP4066D1-E
IGBT 4000V ICM 400A Abstract: IGBT 4000V Text: PD - 96410B AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C VCES = 600V Low VCE ON Trench IGBT Technology Low switching losses IC(Nominal) = 75A	Original	PDF	96410B AUIRGP4066D1 AUIRGP4066D1-E IGBT 4000V ICM 400A IGBT 4000V
4Mx4 dram simm Abstract: FPM DRAM 30-pin SIMM CI 3060 elsys 72 simm function 8m x 36 8m x 36 60ns simm 4Mx4 fpm dram 30 simm Text: 8M x 36 Bit 5V ECC FPM SIMM Fast Page Mode FPM DRAM SIMM 368056-S52m18JD 72 Pin 8Mx36 FPM SIMM Unbuffered, 2k Refresh, 5V, ECC Mode Pin Assignment General Description Pin # Symbol 1 Vss 2 DQ0 3 DQ18 4 DQ1 5 DQ19 6 DQ2 7 DQ20 8 DQ3 9 DQ21 10 Vcc 11 NC 12	Original	PDF	368056-S52m18JD 8Mx36 72-pin DS592-20 4Mx4 dram simm FPM DRAM 30-pin SIMM CI 3060 elsys 72 simm function 8m x 36 8m x 36 60ns simm 4Mx4 fpm dram 30 simm
CI 3060 elsys Abstract: GAL18V10B-15LP 18V10 GAL18V10 GAL18V10B-10LJ GAL18V10B-10LP GAL18V10B-7LJ GAL18V10B-7LP Text: GAL18V10 High Performance E2CMOS PLD Generic Array Logic Features Functional Block Diagram • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 111 MHz — 5.5 ns Maximum from Clock Input to Data Output — TTL Compatible 16 mA Outputs	Original	PDF	GAL18V10 Tested/100% 100ms) CI 3060 elsys GAL18V10B-15LP 18V10 GAL18V10 GAL18V10B-10LJ GAL18V10B-10LP GAL18V10B-7LJ GAL18V10B-7LP
CI 3060 elsys Abstract: 18V10 GAL18V10 GAL18V10B-10LJ GAL18V10B-10LP GAL18V10B-15LP GAL18V10B-7LJ GAL18V10B-7LP Text: GAL18V10 High Performance E2CMOS PLD Generic Array Logic Features Functional Block Diagram • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 111 MHz — 5.5 ns Maximum from Clock Input to Data Output — TTL Compatible 16 mA Outputs	Original	PDF	GAL18V10 Tested/100% 100ms) CI 3060 elsys 18V10 GAL18V10 GAL18V10B-10LJ GAL18V10B-10LP GAL18V10B-15LP GAL18V10B-7LJ GAL18V10B-7LP
CI 3060 elsys Abstract: CI 3060 -elsys 18V10 GAL18V10 GAL18V10B-10LJ GAL18V10B-10LP GAL18V10B-15LP GAL18V10B-7LJ GAL18V10B-7LP GAL18V10B-20LP Text: Specifications GAL18V10 GAL18V10 High Performance E2CMOS PLD Generic Array Logic FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 111 MHz — 5.5 ns Maximum from Clock Input to Data Output	Original	PDF	GAL18V10 Tested/100% CI 3060 elsys CI 3060 -elsys 18V10 GAL18V10 GAL18V10B-10LJ GAL18V10B-10LP GAL18V10B-15LP GAL18V10B-7LJ GAL18V10B-7LP GAL18V10B-20LP
18V10 Abstract: GAL18V10 GAL18V10B-10LJ GAL18V10B-10LP GAL18V10B-15LP GAL18V10B-7LJ GAL18V10B-7LP gal18v10b-20lp Text: Specifications GAL18V10 GAL18V10 High Performance E2CMOS PLD Generic Array Logic FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 111 MHz — 5.5 ns Maximum from Clock Input to Data Output	Original	PDF	GAL18V10 Tested/100% 18V10 GAL18V10 GAL18V10B-10LJ GAL18V10B-10LP GAL18V10B-15LP GAL18V10B-7LJ GAL18V10B-7LP gal18v10b-20lp
18V10 Abstract: LSC 1008 lattice 22v10 programming GAL18V10 GAL18V10B-10LJ GAL18V10B-10LP GAL18V10B-15LP GAL18V10B-7LJ GAL18V10B-7LP gal18v10b-20lp Text: Specifications GAL18V10 GAL18V10 High Performance E2CMOS PLD Generic Array Logic FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 111 MHz — 5.5 ns Maximum from Clock Input to Data Output	Original	PDF	GAL18V10 18V10 LSC 1008 lattice 22v10 programming GAL18V10 GAL18V10B-10LJ GAL18V10B-10LP GAL18V10B-15LP GAL18V10B-7LJ GAL18V10B-7LP gal18v10b-20lp
GAL programmer schematic Abstract: 18V10 GAL18V10 GAL18V10B-10LJ GAL18V10B-10LP GAL18V10B-15LP GAL18V10B-7LJ GAL18V10B-7LP Text: GAL18V10 High Performance E2CMOS PLD Generic Array Logic Features Functional Block Diagram • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 111 MHz — 5.5 ns Maximum from Clock Input to Data Output — TTL Compatible 16 mA Outputs	Original	PDF	GAL18V10 Tested/100% 100ms) GAL programmer schematic 18V10 GAL18V10 GAL18V10B-10LJ GAL18V10B-10LP GAL18V10B-15LP GAL18V10B-7LJ GAL18V10B-7LP
GAL programmer schematic Abstract: 18V10 GAL 16 v 8 D GAL18V10 GAL18V10B-10LJ GAL18V10B-10LP GAL18V10B-15LP GAL18V10B-7LJ GAL18V10B-7LP Text: GAL18V10 High Performance E2CMOS PLD Generic Array Logic Features Functional Block Diagram • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 111 MHz — 5.5 ns Maximum from Clock Input to Data Output — TTL Compatible 16 mA Outputs	Original	PDF	GAL18V10 Tested/100% 100ms) GAL programmer schematic 18V10 GAL 16 v 8 D GAL18V10 GAL18V10B-10LJ GAL18V10B-10LP GAL18V10B-15LP GAL18V10B-7LJ GAL18V10B-7LP
GAL18V10B-10LP Abstract: GAL18V10B-15LP GAL18V10B-20LP GAL18V10B-7LP 18V10 GAL18V10 GAL18V10B-10LJ GAL18V10B-15LJ GAL18V10B-20LJ GAL18V10B-7LJ Text: GAL 18V10 Device Datasheet September 2010 All Devices Discontinued! Product Change Notifications PCNs have been issued to discontinue all devices in this data sheet. The original datasheet pages have not been modified and do not reflect those changes. Please refer to the table below for reference PCN and current product status.	Original	PDF	18V10 GAL18V10 GAL18V10B-7LJ GAL18V10B-7LP GAL18V10B-10LJ GAL18V10B-10LP GAL18V10B-15LJ GAL18V10B-15LP GAL18V10B-20LJ GAL18V10B-20LP GAL18V10B-10LP GAL18V10B-15LP GAL18V10B-20LP GAL18V10B-7LP GAL18V10 GAL18V10B-10LJ GAL18V10B-15LJ GAL18V10B-20LJ GAL18V10B-7LJ

str f 6456 Abstract: str x 6456 SM 5126 BP STR F 6168 str 6668 STR G 6352 STR 6456 str f 6468 321 CJ 7121 AXP 209 IC Text: Tem ic Se ni i co n fi li c t ci Sales Offices rs Addresses Europe France TE M IC France Les Q uadrants 3. avenue du centre B.P. 309 78054 S t.-Q uentin-en-Y veL nes Cedex Tel: 33 I 3060 7000 F a x :33 I 3060 V 11 i Germany TE M IC TE LEFU N K EN m icroelectronic G m bH	OCR Scan	PDF	09-Dec-96 str f 6456 str x 6456 SM 5126 BP STR F 6168 str 6668 STR G 6352 STR 6456 str f 6468 321 CJ 7121 AXP 209 IC
BM11104 Abstract: QFP80-P-1420-0 TC571000D TMP87PM53F hfcf Text: TOSHIBA ^ TMP87PM53 * CMOS 8 b f ' y h V ' f ? n = l > h n - 7 TMP87PM53F 87PM53 fá 256K fcf y h 7 > 9 >f A P R O M £ FJÍ£ L fc Ü ÏÜ , -7X ^ R O M p p ^ 8 7 C M 5 3 ¿ t? > n > 87CM 53¿ i to ¿ ^ Î H ^ 'M E P R 0 M 7 on y F y n 3 > f- 7;l/ f t o FIÉS£> P R O M U 7° n ^ 9 A & # § jX fr i	OCR Scan	PDF	TMP87PM53 TMP87PM53F 87PM53 87CM531 87CM53* TC571000D TMP87PM53F QFP80-P-1420-0 BM11104 hfcf
Untitled Abstract: No abstract text available Text: ¿ 888888888 \|p M iwiHBBffi smsssBPe .rfHHHHHHHHMh. m1 itittnnnnn hhhhhhk-. iiHiiftBHhr. Data Sheet No. 2N5415S o % f# 1 l $ 1 I cI ^88888 sdL SEMICONDUCTORS G eneric Part Num ber: 2N5415S Type 2N5415S G eom etry TBD P olarity PNP Q ual Level: Pending REF: M IL-P R F -19 5 0 0 /4 8 5	OCR Scan	PDF	2N5415S
AN5337 ca3028 Abstract: CA3028 AN5337 transistor hh 004 circuits diagram CA3053E CA3053 CA3028A CA30288 ca3028a equivalent AN5337 equivalent Text: ÍSJ h a r r i s U P CA3028A, CA3028B, S E M I C O N D U C T O R Differential/Cascode Amplifiers for Commercial and Industrial Equipment from DC to 120MHz November 1996 Features Description • Controlled for Input Offset Voltage, Input Offset Current and Input Bias Current CA3028 Series Only	OCR Scan	PDF	CA3028A, CA3028B, 120MHz CA3028A CA3028B 120MHz. A3028B CA3053 AN5337 ca3028 CA3028 AN5337 transistor hh 004 circuits diagram CA3053E CA30288 ca3028a equivalent AN5337 equivalent
3045 PT Abstract: MBR30150PT CI 3060 elsys 2sc 2026 304S MBR3035PT rfltw Text: E MBR3035PT- MBR30150PT TAIWAN SEMICONDUCTOR RoHS [Pb 30.0 AMPS. Schottky Barrier Rectifiers TO-3P/TQ-247AD C O M P L IA N C E m Features ❖ P la s tic m a te ria l u s e d ca rrie s U n d e rw rite rs L a b o ra to ry C la s s ific a tio n s 94V -Q '> Metal silicon Junction, m ajority c a rrlc r conduct on	OCR Scan	PDF	MBR3035PT MBR30150PT P/TQ-247AD MBR3035PTTHRU MBR30150PT) kR33A9CFTÂ 3045 PT MBR30150PT CI 3060 elsys 2sc 2026 304S rfltw
NEC a1009 Abstract: a1009a a1009 2SA1009 CI A1009A nec 2sa1009 2SA1009A 271 0276 009 2sa 945 2SA1009/A Text: •?— S 7* 5/ — K y <7 — Silicon P o w e r Tran sistors S 2 P N P = f i? Æ A 1 9 , 1 9 A Ü ^ '> X - f 'y ^ I i f f l 2SA 1009, 2 S A 1 0 0 9 A ü f i ; i * l t K I Î / ± X Ï - y ^ > m t L T S % T O : mm x 4 - v f - > 9" ■ u % zl v 9, D C-D Cn	OCR Scan	PDF	2SA1009 2SA1009, 2SAI009/2S A1009A NEC a1009 a1009 CI A1009A nec 2sa1009 2SA1009A 271 0276 009 2sa 945 2SA1009/A
TMP87CM53F Abstract: QFP80-P-1420-0 TLCS-870 TMP87PM53F TMP87CM53 1J87C Text: TOSHIBA TMP87CM53 CMOS 8 b f ' y h V ' f ? n = l > h n - 7 TMP87CM53F A ^ Ä R O M , RAM, A t t i * - h, ^ 9 4 ^ , y 'JT iK ^ 7 x - X ,8 H '7 hA/D n > - 9 , D TM Fv i * !✓ - 9 , * u r 4 & £ Tß23hfäi<n>%m.W&iZ ¥ Z f t M L t z M ì È , Ìb f!t£ 8 fcf y h v > 7 V	OCR Scan	PDF	TMP87CM53 TMP87CM53F 32K/W QFP80-P-1420-0 TMP87PM53F TLCS-870 MX-38T 1J87C
Lautsprecher LP Abstract: L3060PB reich L2459 ddr lautsprecher L2155PB gut 2160 Scans-048 KAN SC 3000 DSAGER00027 Text: A us dem Lautsprechersortim ent d er DDR L a u tsp re c h e r w erd e n in e in e r g ro ß e n Ty p e n a n z a h l g e fe rtig t. D ie T a b e lle zeig t e in e A u sw a h l. Sie b e g in n t mit dem Kleinstlautsprecher 121 K. S e in e O b e rtra g u n g sku rve ist g a n z sp eziell a u f d ie V e r	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA THMY51E01 B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E01B is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM808BFT DRAMs and an unbuffer on a printed circuit board.	OCR Scan	PDF	THMY51E01 B70f75f80 864-WORD 72-BIT THMY51E01B TC59SM808BFT 72-bit
D036 Abstract: D018 D019 D032 D051 Text: T O S H IB A THMY25E01A70,70L,75,75L,80,80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25E01A is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708AFT/AFTL DRAMs and an unbuffer on a printed circuit board.	OCR Scan	PDF	THMY25E01 432-WORD 72-BIT THMY25E01A TC59SM708AFT/AFTL 72-bit 75/75L D036 D018 D019 D032 D051

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CI 3060 PT Search Results

CI 3060 PT Result Highlights (5)

CI 3060 PT Datasheets Context Search

MKT .22K 250V X2

Untitled

auirgp4066d1

Untitled

IGBT 4000V ICM 400A

4Mx4 dram simm

CI 3060 elsys

CI 3060 elsys

CI 3060 elsys

18V10

18V10

GAL programmer schematic

GAL programmer schematic

GAL18V10B-10LP

str f 6456

BM11104

Untitled

AN5337 ca3028

3045 PT

NEC a1009

TMP87CM53F

Lautsprecher LP

Untitled

D036