Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1679G Silicon PNP epitaxial planar type For low-frequency amplification • Package • Large collector output capacitance (Common base, input open circuited) Cob • Low collector-emitter saturation voltage VCE(sat)
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2SB1679G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5939G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing • Features ■ Package • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob and reverse transfer capacitance (Common base) Crb
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2SC5939G
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Untitled
Abstract: No abstract text available
Text: Transistors 2SC3935 Silicon NPN epitaxial planar type 0.425 For high-frequency amplification/oscillation/mixing 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10 0.9±0.1 3 • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob and reverse transfer capacitance (Common base) Crb
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2SC3935
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2SC3130
Abstract: XP05531
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP05531 0.2±0.05 For high-frequency/oscillation/mixing 5 0.12+0.05 –0.02 4 • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob and reverse transfer capacitance (Common base) Crb
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XP05531
2SC3130
XP05531
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2SC3935G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3935G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification/oscillation/mixing • Package • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob and reverse transfer capacitance (Common base) Crb
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2SC3935G
2SC3935G
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Radar Antenna
Abstract: working principle of ac servo motor lm12 op amp AN-446 LM12 fast op LM318 radar position control servo motor
Text: Robert J. Widlar Apartado Postal 541 Puerto Vallarta, Jalisco, Mexico sistor array. The turn-on characteristics are controlled by keeping the output open-circuited until the total supply voltage reaches 15V. The output is also opened should the case temperature exceed 150˚C or as the supply voltage approaches the BVCEOof the output transistors. The IC withstands overvoltages to 100V.
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an008710
Radar Antenna
working principle of ac servo motor
lm12 op amp
AN-446
LM12
fast op LM318
radar position control servo motor
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2SC3611
Abstract: No abstract text available
Text: Power Transistors 2SC3611 Silicon NPN epitaxial planar type For video amplifier Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 3.8±0.3 • High transition frequency fT • Small collector output capacitance Common base, input open circuited Cob • Wide current range
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2SC3611
O-126B
2SC3611
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2SC3935G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3935G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing • Package • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob and reverse transfer capacitance (Common base) Crb
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2002/95/EC)
2SC3935G
2SC3935G
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transconductance mosfet
Abstract: mosfet controlled thyristor IGBT gate driver welding working of reverse conducting thyristor SKN 21 DIODE Thyr Thyristor pulse transformer IGBT tz SKN 21 thyristor driver transformer
Text: Terms and Letter Symbols Currents Alternating output current of an a.c. controller connection Irms Collector current for VCEsat test ICsat Collector-emitter cut-off current with base-(gate-)emitter short-circuited ICES Nominal r.m.s. current INRMS Continuous direct current
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Eupec Power Semiconductors
Abstract: AN2002-07 module RBSOA
Text: APPLICATION NOTE Date: 02.12.13 Page 1 of 3 AN-Number: AN2002-13 replaces AN2002-07 Mounting instructions for IHM & IHV modules • handling IGBTs are electrostatic-sensitive devices. While handling the modules, gate and auxiliary emitter terminals must be short-circuited by a metal
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AN2002-13
AN2002-07)
D-59581
Eupec Power Semiconductors
AN2002-07
module RBSOA
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where working in capacitor
Abstract: vent capacitor
Text: When using aluminum electrolytic capacitors, pay strict attention to the following： Polarized aluminum electrolytic capacitors. If you should reverse the polarities of aluminum electrolytic capacitors, it would lead to short-circuited circuitry and many further results in an explosion if the unit
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3526H Silicon NPN epitaxial planar type For display video output Unit: mm 5.9±0.2 4.9±0.2 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob
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2SC3526H
100nteed
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5295G Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification • Features ■ Package • High transition frequency fT • Low collector output capacitance (Common base, input open circuited) Cob
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2SC5295G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656G Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791G • Features ■ Package • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob
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2SC4656G
2SA1791G
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2SA1748G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4562G Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1748G • Package ■ Features • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob
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2002/95/EC)
2SC4562G
2SA1748G
2SA1748G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1679G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency amplification • Package • Large collector output capacitance (Common base, input open circuited) Cob
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2002/95/EC)
2SB1679G
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2SC3130
Abstract: No abstract text available
Text: Transistors 2SC3130 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • High transition frequency fT • Small collector output capacitance Common base, input open circuited Cob and reverse transfer capacitance (Common emitter) Crb
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2SC3130
2SC3130
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2SC5190
Abstract: No abstract text available
Text: Transistors 2SC5190 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification 0.425 Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10 0.9±0.1 3 • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob
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2SC5190
2SC5190
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Untitled
Abstract: No abstract text available
Text: EHA0-2400-6 EHA0-2400-6 Die 4 Channel Programmable Am plifier A b so lu te M axim u m R a tin g s c t a = 25°c> Voltage between V + and V — 45V Differential In p u t Voltage ± V Supply O utput Current Short Circuited Protected T a. Operating Tem perature Range
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EHA0-2400-6
EHA0-2400-6
--10V
--20V.
--15V,
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ASZ15
Abstract: AF127 AF126 AF125 AF124 ASZ18 ASZ16 AF117 ADZ12 AF116
Text: 52 T ran sistors Continued Notes Minimum value Average value Max. unilateralized power gain Max. frequency of oscillation With heat sink Max. total dissipation in free air at 25°C ambient temp. Vcbo: Max. collector-to-t»ase voltage, emitter open-circuited
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ADZ11
100kcnl
AF114
ASY27
150mW
0mc111
ASY28
14mcl2>
ASY29
ASZ15
AF127
AF126
AF125
AF124
ASZ18
ASZ16
AF117
ADZ12
AF116
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TDA3676AT
Abstract: MDA961 TDA3672 TDA3676 TDA3676T HLQFP 144 MDA952 SNW-FQ-611-E
Text: Philips Semiconductors Preliminary specification Low dropout voltage/quiescent current 10 V voltage regulator with enable FEATURES - Able to withstand voltages up to 18 V at the output supply line may be short-circuited - ESD protected for all pins - DC short-circuit safe to ground and V P of the
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TDA3676
TDA3672
TDA3676AT
MDA961
TDA3676
TDA3676T
HLQFP 144
MDA952
SNW-FQ-611-E
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vi08
Abstract: lc06
Text: H A 1 3 4 1 5 Quad Solenoid Driver Description HA13415 T h e H A 1 3 4 1 5 m o n o lith ic p o w e r IC d riv e s inductive loads. It is packaged in a 16-pin Dip containing four 0.6-A driving circuits. Each driver has an OCSD over current shut down circuit to protect the IC from the short-circuited
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16-pin
HA13415
DP-16C)
vi08
lc06
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Untitled
Abstract: No abstract text available
Text: Dielectric absorption DA is a phenom enon occurring in all solid dielectric capacitors. It is usually measured by means of a standard D A test wherein a capacitor is charged for a period of time, momentarily discharged and then allowed to stand open circuited
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification 1.3GHz low voltage fractional-N synthesizer FEATURES SA7016 Separate power and ground pins are provided to the analog and digital circuits. The ground leads should be externally short-circuited to prevent large currents flowing across the die and thus causing
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SA7016
SP01506
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