el 7406
Abstract: ZPH1-5216
Text: CombiLyz AFI4 / AFI5 Inductive conductivity transmitter Main features Range from 500 µS/cm to 1000 S/cm All hygienic design Built in graphical display CombiView DFON Very fast temperature compensation Easy and full programmable with FlexProgrammer 9701
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EN/2015-03-17
el 7406
ZPH1-5216
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awm 2464 300v cable specification
Abstract: awg 2464 300v cable specification AWM 2464 csa AWM 2464 B AWM 2464 24 awg ul 2464 20 awg awm2464 AWM 2464 80c 300v awm 2464 300v awm ul 2464 CSA AWM
Text: COMMUNICATION & CONTROL UL TYPE CM UL AWM 2464, CSA CMG FT4 300 VOLT MULTIPAIR FOIL SHIELD PVC/ PVC CHARACTERISTICS OPERATING TEMPERATURE: • –20°Cto 80°C– AWM ■ 75°C– CM VOLTAGE RATING: ■ 300 Volt COLOR DESCRIPTION: ■ Color Code: Chart K Page 377
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5475C
AWM/STYLE2464
awm 2464 300v cable specification
awg 2464 300v cable specification
AWM 2464
csa AWM 2464
B AWM 2464 24 awg
ul 2464 20 awg
awm2464
AWM 2464 80c 300v
awm 2464 300v awm
ul 2464 CSA AWM
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Infrared Transceiver
Abstract: No abstract text available
Text: TFBS4650 Vishay Semiconductors Infrared Transceiver, 9.6 kbit/s to 115.2 kbit/s SIR FEATURES • Compliant with the IrDA physical layer IrPHY 1.4 (low power specification, 9.6 kbit/s to 115.2 kbit/s) • Link distance: 30 cm/20 cm full 15° cone with standard or low power IrDA, respectively.
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TFBS4650
cm/20
11-Mar-11
Infrared Transceiver
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S638b
Abstract: K6488L-FF lcd 640 s639b color graphic lcd graphical LCD screen lcd 640 x 480 citizen K6484L-FF GRAPHIC LCD MODULE LCD GRAPHIC module
Text: VGA 6.0” 15.3 cm Color Graphic LCD Module Preliminary Preliminary HS60VGA K6488L-FF (STN) VGA 6.0” (15.2 cm) Color Graphic LCD Module General Description The K6488L-FF BabyVGA is a 6.0" STN color VGA LCD display module. It can be ordered with or without a backlight power
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HS60VGA
K6488L-FF
K6488L-FF
K6484L
d2437-30
UL3239
BHR-03VS-1
S638b
lcd 640
s639b
color graphic lcd
graphical LCD screen
lcd 640 x 480 citizen
K6484L-FF
GRAPHIC LCD MODULE
LCD GRAPHIC module
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Untitled
Abstract: No abstract text available
Text: Model LPS Celtron Low Profile Single-Point FEATURES • Capacities: 0.6 to 200 kg • Small size with low profile • Anodized aluminum • NTEP Class III 5000S approval from 3 kg to 30 kg • OIML C3 approval from 6 kg to 35 kg • Platform size: 16”x16”/ 40 cm x 40 cm
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5000S
27-Apr-2011
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cm05fd
Abstract: SAHA Mica capacitors Ashcroft Capacitor mica dm series SAHA cm05 SAHA DM05FA151J-CA CM05 capacitor SERIES cm05 mica 151JO3
Text: MICA CAPACITORS MICA CAPACITORS Quick Reference Guide DM Series General Specifications by Case Size MIL STYLE - Discontinued DM 05 - DM 10 CM 04 DM 12 - DM 15 CM 05 CAPACITANCE RANGE pF 50 V DC 100 V DC 300 V DC 500 V DC 1000 V DC* 1 to 390 390 200 120 - 1 to 390
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KL SN 102 94v-0 lcd
Abstract: KL SN 102 lcd KL SN 102 94v-0 lcd kl sn 102 94v-0 KL SN 102 94v SDR0603-150ML KL SN 102 94v0 SRR6022 SRR1038-331Y CM453232-LAB1
Text: Bourns Inductors Product Selection Guide Bourns® Inductors I. Surface Mount Chip Inductors Product Capability Matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Product Specifications: • CM Series Wirewound Sealed Chip Inductors . . . . . . . . . . . . . . . . . . . . . . . . .8
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Multi-Layer00
XX/IC0505
KL SN 102 94v-0 lcd
KL SN 102 lcd
KL SN 102 94v-0
lcd kl sn 102 94v-0
KL SN 102 94v
SDR0603-150ML
KL SN 102 94v0
SRR6022
SRR1038-331Y
CM453232-LAB1
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at-1438-twt-r
Abstract: No abstract text available
Text: SPECIFICATIONS PARAMETERS RATED VOLTAGE OPERATING VOLTAGE RANGE RATED CURRENT MAX CAPACITANCE MINIMUM SPL @ 10 CM RESONANT FREQUENCY OPERATING TEMPERATURE STORAGE TEMPERATURE HOUSING MATERIAL TERMINAL MATERIAL WEIGHT VALUES UNITS 5 1 ~ 20 1 13,000 ± 30%
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2002/95/EC
AT-1438-TWT-R
AT-1438-TWT-R
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TC75W57FU/FK TO SH IBA CM OS LINEAR INTEGRATED CIRCUIT SILICON M ONOLITHIC TC75W57FU, TC75W57FK DUAL COMPARATOR TC75W 57 is a CM OS type general-purpose dual com parator capable o f single pow er supply operation and using lower supply currents than the conventional bipolar
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TC75W57FU/FK
TC75W57FU,
TC75W57FK
TC75W
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TC7WH04FU/FK TO SH IBA CM OS DIG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC7WH04FU, TC7WH04FK TRIPLE INVERTER The TC7W H04 is an advanced high speed CMOS INVERTER fabricated w ith silicon gate CM OS technology. It achieves the high speed operation sim ilar to equivalent
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TC7WH04FU/FK
TC7WH04FU,
TC7WH04FK
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marking pdv
Abstract: No abstract text available
Text: TOSHIBA TC7SH08F/FU TO SH IBA CM OS D IG ITAL INTEGRATED CIRCU IT SILICON M ONOLITHIC TC7SH08F, TC7SH08FU 2-INPUT AND GATE The TC7SH08 is an advanced high speed CM OS 2-INPUT AN D GATE fabricated w ith silicon gate C2MOS technology. It achieves the high speed operation similar
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TC7SH08F/FU
TC7SH08F,
TC7SH08FU
TC7SH08
marking pdv
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bs marking
Abstract: No abstract text available
Text: PRELIMINARY - - May 1996 Edition 1.0 PRODUCT PROFILE SHEET FUJITSU M B 8 1 V17405A-60/-70 CMOS 4M x 4 BIT HYPER PAGE MODE DYNAMIC RAM CM O S 4,194,304 x 4 BIT Hyper Page Mode Dynamic RAM The Fujitsu M B81V17405A is a fully decoded CM OS Dynamic RAM DRAM that contains
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V17405A-60/-70
B81V17405A
S-20353-6/96
bs marking
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TC7SH00F/FU TO SH IBA CM OS D IG ITAL INTEGRATED CIRCU IT SILICON M ONOLITHIC TC7SH00F, TC7SH00FU 2-INPUT NAND GATE The TC7SH00 is an advanced high speed CM OS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar
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TC7SH00F/FU
TC7SH00F,
TC7SH00FU
TC7SH00
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marking codes SOT23 SS
Abstract: marking 7T
Text: IIV C CMPT3904 NPN CMPT3906 PNP COMPLEMENTARY SILICON TRANSISTORS bvceo b v ebo VCE SAT VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE r a l The C E NTRAL S E M IC O N D U C TO R CM P T3904, CM P T3906 types are co m p le m e n ta ry s ilico n tra n s is to rs
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CMPT3904
CMPT3906
T3904,
T3906
OT-23
100MHz
marking codes SOT23 SS
marking 7T
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CMOS-6A
Abstract: F223 65630 F304 f422 F501 MOS l442 bt08 700201 L421 Marking
Text: NEC CM OS-6/6 A 1.0-MICRON CMOS g a t e a r r a y s NEC Electronics Inc. PRELIM INARY Description February 1990 Figure 1. Sample CMOS-6 Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A are ultra-high performance, sub-micron channel length CM OS p ro du cts crea ted fo r h ig h -in te g ra tio n A S IC
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IP-8090
CMOS-6A
F223
65630
F304
f422
F501 MOS
l442
bt08
700201
L421 Marking
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diode rectifier siemens
Abstract: No abstract text available
Text: SIEMENS BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies ESD: Electrostatic discharge sensitive device, observe handling precaution BAT 62-02W L 1 =C Q62702-A1028 h Pin Configuration < Marking Ordering Code CM Type
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2-02W
2-02W
Q62702-A1028
SCD-80
diode rectifier siemens
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 196W PNP Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=47kfl, R2=22kiî WXs UPON INQUIRY 1 =B Package o BCR 196W Pin Configuration II CO Marking Ordering Code III II CM
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47kfl,
OT-323
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Untitled
Abstract: No abstract text available
Text: \ 20 M a I b I c I torrr u F+ o 0 O CM d o 15 x 2.54 = 38.10 o -\4 B .2 6 \- 10 K 8.50 0.00 - 0.10 10 un I L o L 1 oo o r 3.85 + 0.2 0 -0 .0 5 oo T S o O <M o o CM 0.7 6 J U d o o o d B RECOMMENDED PCB LAYOUT COMPONENT SIDE A / tb_frane_A1_P_ME_T| Rev. D 2004/04/02 |
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SD-36510-001
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JE800
Abstract: No abstract text available
Text: SIEM ENS Schnelle GaAIAs-IR-Lumineszenzdiode High-Speed GaAIAs Infrared Emitter SFH 4290 SFH 4295 Vorläufige Daten / Preliminary Data 0.1 typ CM h* CO 0.18 0.12 Cathode/Collector marking O I Q. 0.4 SFH 4290 Cathode/Collector GPL06724 Collector Emitter GPLQ6880
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GPL06724
GPLQ6880
OHF00360
JE800
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TRANSISTOR S2d
Abstract: NPN S2D
Text: SIEMENS SMBTA 92M PNP Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42M NPN T“* II Q62702-A1244 LU s2D CO SMBTA 92M o Pin Configuration II CM Ordering Code II Marking
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Q62702-A1244
SCT-595
300ns;
TRANSISTOR S2d
NPN S2D
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 521 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=1kii, R2=1kii Type Q62702-C2355 1= B II Pin Configuration Package LU XVs Ordering Code CM BCR 521 Marking 3=C SOT-23
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Q62702-C2355
OT-23
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TRANSISTOR b 772 p
Abstract: No abstract text available
Text: SIEMENS BCR 503 NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, drive circuit » Built in bias resistor R1=2.2kiî, R2=2.2k£î XAs Q62702-C2370 1= B Package II CO BCR 503 Pin Configuration O Marking Ordering Code LU II CM
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Q62702-C2370
OT-23
300ns;
TRANSISTOR b 772 p
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Q62702-C2377
Abstract: vk sot-363 marking 7S Marking wms sot marking code vk, sot-363
Text: SIEMENS BCR 183S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, 4 driver circuit 5 6 • Built in resistor R1 = 10kii, R2 = 10k£2 » ^ 3 2 1 Marking Ordering Code Pin Configuration BCR183S WMs CM II CO Q62702-C2377 1=E1 2=B1
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10kii,
VPS05604
BCR183S
OT-363
Q62702-C2377
300ns;
vk sot-363
marking 7S
Marking wms sot
marking code vk, sot-363
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBTA 56M PNP Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 06M NPN h HI CO Q62702-A3474 o s2G II CM SMBTA 56M Pin C onfiguration CO II Marking O rdering Code T— Type
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Q62702-A3474
SCT-595
300ns;
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