0.18-um CMOS technology characteristics
Abstract: atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology
Text: RF CMOS RF cmos 0.18 Micron Technology Atmel's 0.18 micron RF CMOS process technology provides a low-cost solution for high-performance RF applications. Key Features Key Benefits • 1.8V CMOS Transistors • Low Power • 3.3V I/O • Low Cost • Embedded EEPROM
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5136B-05/06/1K
0.18-um CMOS technology characteristics
atmel 048
MICRON RESISTOR Mos
NMOS transistor 0.18 um CMOS
atmel 018
0.18-um CMOS technology
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71V3558
Abstract: 71V2557
Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR0105-01 DATE: 5/14/01 Product Affected: ZBT Product Family - Refer to attached list of part #'s. Manufacturing Location Affected: N/A
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SR0105-01
IDT71V2559
133MHz
IDT71V3556
IDT71V2556
IDT71V3558
IDT71V2558
71V3558
71V2557
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0.18 um CMOS Spiral Inductor technology
Abstract: TSMC+rf+cmos+0.18+um
Text: Standard Features • • • • • • • 1.8V CMOS Transistors High Value Poly Resistors N+ & P+ S/D Resistors Low Value Poly Resistor Standard Poly Implant Resistor Multilevel Metallization 1P/4M Non-epi 200 mm Wafer Optional Features • • • •
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12um2
AT589RF
5133B
0.18 um CMOS Spiral Inductor technology
TSMC+rf+cmos+0.18+um
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HBT 01 - 05
Abstract: dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G
Text: A 0.18lm 90 GHz fT SiGe HBT BiCMOS, ASIC-Compatible, Copper Interconnect Technology for RF and Microwave Applications G. Freeman, D. Ahlgren, D.R. Greenberg*, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S.J. Jeng, J. Johnson*, K. Schonenberg*, K. Stein, R. Volant, S. Subbanna
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90GHz,
90GHz
HBT 01 - 05
dr 25 germanium diode
HBT 01 05G
Silicon germanium Heterojunction Bipolar Transistor
GERMANIUM SMALL SIGNAL TRANSISTORS
poly silicon resistor
1lm2
0.18 um CMOS parameters
hbt 05
HBT 01 - 01 G
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Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN 8/21/00 PCN #: SR0008-03 DATE: Product Affected: 71V416S/L, 71V424S/L, 71V428S/L Manufacturing Location Affected: Date Effective: 11/20/00 Contact:
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SR0008-03
71V416S/L,
71V424S/L,
71V428S/L
FRC-1509-01
QCA-1795
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hv2300
Abstract: AXTO bsim3 model for 0.18 micron technology for hspice adc04 x-fabs 0.8um nmos bsim3 model parameters bsim3 model analog devices transistor tutorials analogue digital converter instrumentation delta application instrumentation projects
Text: 0.8 m CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom
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71016s
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR0011-04 DATE: Product Affected: 71016S, 71124S, 71128S Manufacturing Location Affected: N/A Date Effective: Contact: Title: Phone #: Fax #:
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SR0011-04
71016S,
71124S,
71128S
71016s
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Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM
Abstract: TPC2A Alcatel-Lucent
Text: Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM A.Y.-K. Chen Presented is the performance of a highly integrated RF single-pole double-throw SPDT switch fabricated in a 0.18 µm bulk CMOS process and housed in a low-cost laminated multi-chip module (MCML) package. A switch controller is also implemented and consumes
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C350AVB
Abstract: full adder using Multiplexer IC 74150 74LS382 74ls69 T2D 7N IC 74ls147 pin details 74LS396 MB652xxx 651XX 74LS86 full adder
Text: FUJITSU MICROELECTRONICS F U JIT S U wmmm 7flC D B 37MT7bH □D03c]4b 3 • JZ CMOS Gate Array GENERAL INFORMATION The Fujitsu CM O S gate array fam ily consists of tw en tyeight device types which are fabricated w ith advanced silicon gate CMOS technology. And more than 14 devices
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37MT7bH
74LS175
74LS181
74LS183
74LS190
74LS191
74LS192
74LS193
74LS194A
74LS195A
C350AVB
full adder using Multiplexer IC 74150
74LS382
74ls69
T2D 7N
IC 74ls147 pin details
74LS396
MB652xxx
651XX
74LS86 full adder
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74LS299 APPLICATION NOTE
Abstract: No abstract text available
Text: TOSHIBA TC74HC299AP/AF TC74HC299 8-Bit PIPO Shift Register With Asynchronous Clear The TC74HC299A is a high speed CMOS 8-BIT PIPO SHIFT REGISTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.
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TC74HC299AP/AF
TC74HC299
TC74HC299A
74LS299 APPLICATION NOTE
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Untitled
Abstract: No abstract text available
Text: - TC74VHCU04F/FN/FS HEX INVERTER The TC74VHCU04 is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ilar to equivalent Bipolar Schottky TTL while m aintaining the CMOS low
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TC74VHCU04F/FN/FS
TC74VHCU04
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burp
Abstract: 74HCT00
Text: Revised February 1999 EMICQNDUCTGR tm MM74HCT00 Quad 2 Input NAND Gate General Description The MM74HCT00 is a NAND gates fabricated using advanced silicon-gate CMOS technology which provides the inherent benefits of CMOS— low quiescent power and wide power supply range. This device is input and output
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MM74HCT00
MM74HCT
burp
74HCT00
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74LS74 truth table
Abstract: 74ls74 timing setup hold 74LS74 function table
Text: TOSHIBA TC74HC74AP/AF/AFN Dual D-Type Flip-Flop Preset and Clear The TC74HC74A is a high speed CMOS D FLIP-FLOP fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.
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TC74HC74AP/AF/AFN
TC74HC74A
77MHz
TC74HC/HCT
74LS74 truth table
74ls74 timing setup hold
74LS74 function table
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ic 74ls164 AND SPECIFICATIONS
Abstract: ic 74HC164 AND SPECIFICATIONS 74hc164 74HC164 equivalent 54HC 74HC HC164 M54HC164 M74HC164
Text: MMHC164 HS-CMOS INTEGRATED CIRCUITS O M7WC164 PRELIMINARY DATA 8 BIT SIPO SHIFT REGISTER DESCRIPTION The M 54/74HC164 is a high speed CMOS 8 BIT SIPO SHIFT REGISTER fabricated in silicon gate C2MOS technology. It has the same high speed perform ance of LSTTL
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H54HC164
M74HC164
M54/74HC164
HC164
ic 74ls164 AND SPECIFICATIONS
ic 74HC164 AND SPECIFICATIONS
74hc164
74HC164 equivalent
54HC
74HC
M54HC164
M74HC164
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HC224
Abstract: HC-225 HC-224
Text: TC74HC107AP/AF/AFN D U A L J - K FLIP FLOP WITH C L E A R The TC74HC107A is a high speed CMOS DUAL J - K F L IP -F L O P fabricated with silicon gate C 1 MOS technology. It achieves the high speed operation sim ilar to equivalent LSTTL while m aintaining the CMOS low power
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TC74HC107AP/AF/AFN
TC74HC107A
75MHi
HC-224
HC-225
HC224
HC-225
HC-224
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TC74HC73AP
Abstract: No abstract text available
Text: TC74HC73AP/AF D U A L J - K F L I P FLOP W I T H C L E A R The TC74HC73A is a high speed CMOS DUAL J-K FLIP FLOP fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ilar to equivalent LSTTL while m aintaining the CMOS low power
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TC74HC73AP/AF
TC74HC73A
55MHz
TC74HC73AP/AF-3
TC74HC73AP/AF-4
TC74HC73AP
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MC74 motorola
Abstract: DL203 MC74 MC74VHC04 MC74VHCXXD MC74VHCXXDT 3B252
Text: L MOTOR O L A SEM ICO NDUCTOR TECHNICAL DATA H ex Inverter M C74VH C04 The M C74VHC04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC04
51Ting
DL203
------------------------------MC74VHC04/D
MC74 motorola
MC74
MC74VHCXXD
MC74VHCXXDT
3B252
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74ls112 function table
Abstract: H R C M F 2J 225
Text: TOSHIBA TC74HC112AP/AF/AFN Dual J-K Flip-Flop with Preset and Clear The TC74H C 112A is a high speed CMOS DUAL J-K FLIPFLOP fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.
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TC74HC112AP/AF/AFN
TC74HC112A
67MHz
TC74HC/HCT
74ls112 function table
H R C M F 2J 225
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Untitled
Abstract: No abstract text available
Text: TC74HC593AP/AF PRELIMINARY II 8 B I N A R Y C O U N T E R W I T H I N P U T R E G I S T E R 3 - S t a t e I/O The TC74HC593A is a high speed CMOS 8-B IT BINARY COUN TER/REG ISTER fabricated with C2MOS technology. It achieves the high speed operation sim ilar to
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TC74HC593AP/AF
TC74HC593A
HC592A
TC74HC593AP/AF-7
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2 -In p u t XOR G ate M C 74VH C 86 The MC74VHC86 is an advanced high speed CMOS 2-input Exclusive-OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similarto equivalent Bipolar Schottky TTL while maintaining
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MC74VHC86
14-LEAD
51A-03
DL203
b3b7255
aiaQM57
MC74VHC86/D
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7 SEGMENT DISPLAY cd 4511
Abstract: Diode LT 410 cd 4511 7-segment display 74HC4511 - DISPLAY DRIVER 4511B 54HC 74HC M54HC4511 M74HC4511 pin diagram decoder 4511
Text: HS-CMOS INTEGRATED CIRCUITS 7 3S m > PRELIMINARY DATA BCD TO-7 SEGMENT L/D /D LED DESCRIPTION The M54/74HC4511 is a high speed CMOS BCDTO-7 SEGMENT LATCH/DECODER/DRIVER fabricated with silicon gate C2MOS technology. It enables high speed latch and decode operation
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M54/74HC4511
4511B.
7 SEGMENT DISPLAY cd 4511
Diode LT 410
cd 4511 7-segment display
74HC4511 - DISPLAY DRIVER
4511B
54HC
74HC
M54HC4511
M74HC4511
pin diagram decoder 4511
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74LS76 IC
Abstract: TC74HC76AP IC 74LS76 AF4 equivalent TC74HC76A
Text: TC74HC76AP/AF D U A L J - K F L I P - F L O P WI TH P R E S E T A N D C L E A R The TC74HC76A is a high speed CMOS J - K FL IP FLOP fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ilar to equivalent LSTTL while m aintaining the CMOS low power
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TC74HC76AP/AF
TC74HC76A
TC74HC76AP/AF-3
TC74HC76AP/AF-4
74LS76 IC
TC74HC76AP
IC 74LS76
AF4 equivalent
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v1h diode
Abstract: No abstract text available
Text: TC74HC4017AP/AF DECADE C O U N T E R /D IV ID E R The TC74HC4017A is a high speed CMOS DECADE JOHNSON COUNTER fabricated with silicon gate C* MOS technology. It achieves the high speed operation sim ila r to equivalent LSTTL while m aintaing the CMOS low power dissipation.
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TC74HC4017AP/AF
TC74HC4017A
ided-by-10
TC74HC4017AP/AF-4
v1h diode
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Untitled
Abstract: No abstract text available
Text: TC74HC109AP/AF/AFN DUAL J-K F L IP -F L O P WITH PRESET AND CLEAR The TC74HC109A is a high speed CMOS J - K FL IP FLOP fabricated with silicon gate C ^ O S technology. It achieves the high speed operation sim ilar to equivalent LSTTL while m aintaining the CMOS low power
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TC74HC109AP/AF/AFN
TC74HC109A
TC74HC109AP/AF/AFN-3
TC74HC109
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