TRANSISTOR BC 187
Abstract: AN569 MTDF1P02HD SMD310 TRANSISTOR BC 545
Text: MOTOROLA Order this document by MTDF1P02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTDF1P02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistor Micro8 devices are an advanced series of power MOSFETs
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AN569
Abstract: MTDF1N03HD MTDF1N03HDR2 SMD310
Text: MTDF1N03HD Preferred Device Power MOSFET 1 Amp, 30 Volts N–Channel Micro8t, Dual These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed
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MTDF1P02HDR2
Abstract: TRANSISTOR BC 187 AN569 MTDF1P02HD SMD310
Text: MTDF1P02HD Preferred Device Power MOSFET 1 Amp, 20 Volts P–Channel Micro8t, Dual These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed
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mosfet transistor 800 volts.200 amperes
Abstract: No abstract text available
Text: MTSF2P03HD Preferred Device Power MOSFET 2 Amps, 30 Volts P−Channel Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. Micro8 devices are designed
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mosfet transistor 800 volts.200 amperes
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MTSF2P03HD
Abstract: AN569 MTSF2P03HDR2 SMD310
Text: MTSF2P03HD Preferred Device Power MOSFET 2 Amps, 30 Volts P–Channel Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed
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AN569
Abstract: MTSF3N03HD MTSF3N03HDR2 SMD310 DEVICE MARKING aa
Text: MOTOROLA Order this document by MTSF3N03HD/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTSF3N03HD Medium Power Surface Mount Products TMOS Single N-Channel Field Effect Transistor Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs
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AN569
Abstract: MTSF3N03HD MTSF3N03HDR2 SMD310
Text: MTSF3N03HD Preferred Device Power MOSFET 3 Amps, 30 Volts N–Channel Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed
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Untitled
Abstract: No abstract text available
Text: MTDF1C02HD Preferred Device Power MOSFET 1 Amp, 20 Volts Complementary Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. Micro8 devices are designed
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Untitled
Abstract: No abstract text available
Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and
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Abstract: MTDF1C02HD MTDF1C02HDR2 SMD310 "step recovery diode" 1.7 pf
Text: MTDF1C02HD Preferred Device Power MOSFET 1 Amp, 20 Volts Complementary Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed
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"step recovery diode" 1.7 pf
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AN569
Abstract: MTDF1C02HD SMD310
Text: MOTOROLA Order this document by MTDF1C02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTDF1C02HD Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs
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SMD310
Abstract: AN569 MTDF2N06HD MTDF2N06HDR2
Text: MTDF2N06HD Preferred Device Power MOSFET 2 Amps, 60 Volts N–Channel Micro8t, Dual Micro8 devices are an advanced series of Power MOSFETs that contain monolithic back–to–back zener diodes. These zener diodes provide protection against ESD and unexpected transients. These
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Untitled
Abstract: No abstract text available
Text: MTDF1N02HD Preferred Device Power MOSFET 1 Amp, 20 Volts N−Channel Micro8t, Dual These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. Micro8 devices are designed
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d3n04h
Abstract: AN569 MMDF3N04HD MMDF3N04HDR2
Text: MMDF3N04HD Preferred Device Power MOSFET 3 Amps, 40 Volts N–Channel SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode
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Abstract: MTDF1N02HD MTDF1N02HDR2 SMD310
Text: MOTOROLA Order this document by MTDF1N02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTDF1N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistor Micro8 devices are an advanced series of power MOSFETs
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AB Electronic
Abstract: No abstract text available
Text: MTSF1P02HD Preferred Device Advance Information Power MOSFET 1 Amp, 20 Volts P−Channel Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. Micro8 devices are designed
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Diode BYW 56
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbS3T31 002bb77 525 » A P X b5E D BYW54 to 56 CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in herm etically sealed axial-leaded glass envelopes, capable of absorbing reverse transients. They are intended for rectifier applications in colour television circuits as well as general purpose appli
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bbS3T31
002bb77
BYW54
7Z88032
Diode BYW 56
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BY627
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bRE » • b b S a ' m DDEbSIS b^l I IAPX BY627 M AINTENANC E TYPE CONTROLLED AVALANCHE RECTIFIER DIODES Glass passivated rectifier diode in hermetically sealed axial-leaded ID * envelope capable o f absorbing reverse transients, intended fo r rectifier applications in colour television circuits as well as general pur
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BY627
OD-84.
BY627
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Untitled
Abstract: No abstract text available
Text: ^ 3 ffgyair* OSB 9415 SERIES OSM9415 SERIES , OSS 9415 SERIES ^53=131 DDESIOS 5 • MAINTENANCE TYPE N AF1ER PHILIPS/DISCRETE 2SE D HIGH-VOLTAGE RECTIFIER STACKS T -22-07 Ranges of high-voltage rectifier assemblies, incorporating controlled avalanche diodes mounted on
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OSM9415
OSB9415
OSIVI9415
OSS9415
32UNC)
OSM9415
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TELEVISION EHT TRANSFORMERS
Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes
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LCD01
TELEVISION EHT TRANSFORMERS
BYW96E PH
smd code Z9P
germanium transistor
BY527
EQUIVALENT BYD33D
BAX12
BB212
BB515
BBY31
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IEC60-2
Abstract: No abstract text available
Text: GENERAL EXPLANATORY NOTES RECTIFIER DIODES REVERSE RECOVERY When a semiconductor rectifier diode has been conducting in the forward direction sufficiently long to establish the steady state, there will be a charge due to minority carriers present. Before the device can
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PF6HZ
Abstract: P8HZ P6HZ PL10HZ R10HZR P10HZ F62Z P4HZR PL6HZ
Text: DIODES DE REDRESSEMENT A AVALANCHE CONTROLEE controlled avalanche rectifier diodes Vrw M TYPES ^ V RA @ I r = 1 0 0 jiA V VRRM Vo (V) 1A c my my mxy n PL PL PL PL / 4 HZ 6 HZ 8 HZ 10 HZ 2A 1N 1N 1N 1N IN o 3938 3939 3940 3941 3942 my my F 42 Z F 62 Z F 82 Z
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100jia
10/lsJT
r10hz,
PF6HZ
P8HZ
P6HZ
PL10HZ
R10HZR
P10HZ
F62Z
P4HZR
PL6HZ
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Mullard Mullard quick reference guide
Abstract: CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier
Text: The Mullard Technical Handbook i t made up of four sets of Books, each comprising several parts:Book 1 light blue Sem iconductor Devices Book 2 (orange) Valves and Tubes Book 3 (green) Com ponents, M aterials and Assem blies Book 4 (purple or dark blue)
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BZX91
1N825
1N827
1N829
1N914
1N916
1N4001G,
CV7367
1N4002G,
CV7756
Mullard Mullard quick reference guide
CV7476
CV7143
CV8805
BZV46
CV 7476 mullard
CV7099
CV7100 diode
mullard germanium
BYW 64 bridge rectifier
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STR-F6514
Abstract: STR-F6654 EQUIVALENT schematic diagram power supply str f6654 STR-F6524 STRF6523 STR-F6656 EQUIVALENT STR-F6523 schematic diagram power supply str f6656 STR-F6656 STR-F6654
Text: Preliminary Product Specification - 12th September, 1997. STR-F6600 Series ««* * / f l l •i• ■i rr i m_ ri -«««*■- _ M icrosystems E urope Ltd. c — u > n n f \ ie n SNIPS PRIMARY 1C. Advantages i i > ■ Gmtìtj Redated P arts Count A nd »dw Rated MOSFET
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STR-F6600
STR-F6632
STR-F6652
STR-F6653
STR-F6523]
STR-F6654
STR-F6524]
STR-F6656
STR-F6672
STR-F6514
STR-F6654 EQUIVALENT
schematic diagram power supply str f6654
STR-F6524
STRF6523
STR-F6656 EQUIVALENT
STR-F6523
schematic diagram power supply str f6656
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