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    CMLT7820G

    Abstract: CMPT7820 CXT7820
    Text: PROCESS CP782X Small Signal Transistor PNP - Low VCE SAT Transistor Chip PROCESS DETAILS Die Size 26 x 26 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 5.5 x 5.5 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization


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    CP782X CMLT7820G CMPT7820 CXT7820 CMLT7820G CMPT7820 CXT7820 PDF