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    CMLD2838

    Abstract: No abstract text available
    Text: PROCESS CPD30V Central Dual Switching Diode TM Semiconductor Corp. Dual, Common Cathode, High Speed Switching Diode Chip PROCESS DETAILS Die Size 15.4 X 15.4 MILS Die Thickness 7.1 MILS Anode 1 Bonding Pad Area 5.9 X 5.9 X 8.3 MILS Anode 2 Bonding Pad Area


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    PDF CPD30V CMLD2838 28-September CMLD2838

    Untitled

    Abstract: No abstract text available
    Text: PROCESS CPD30V Dual Switching Diode Dual, Common Cathode, High Speed Switching Diode Chip PROCESS DETAILS Die Size 15.4 x 15.4 MILS Die Thickness 7.1 MILS Anode 1 Bonding Pad Area 5.9 x 5.9 x 8.3 MILS Anode 2 Bonding Pad Area 5.9 x 5.9 x 8.3 MILS Top Side Metalization


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    PDF CPD30V CMLD2838 29-April

    BF244 datasheet

    Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
    Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216


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    PDF 1N456 CPD64 1N456A. 1N457 1N457A. 1N458 BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910

    UJT 2n3904

    Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
    Text: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24


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