4011d
Abstract: IDT71P74104 IDT71P74204 IDT71P74604 IDT71P74804
Text: Advance Information IDT71P74204 IDT71P74104 IDT71P74804 IDT71P74604 18Mb Pipelined QDR II SRAM Burst of 4 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description The IDT QDRIITM Burst of four SRAMs are high-speed synchronous memories with independent, double-data-rate DDR , read and write
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IDT71P74204
IDT71P74104
IDT71P74804
IDT71P74604
71P74104
71P74804
71P74604
36-Bit)
4011d
IDT71P74104
IDT71P74204
IDT71P74604
IDT71P74804
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CQX 89
Abstract: IDT71P71104 IDT71P71204 IDT71P71604 IDT71P71804 1N3M 6n39
Text: Advance Information IDT71P71204 IDT71P71104 IDT71P71804 IDT71P71604 18Mb Pipelined DDR II SRAM Burst of 2 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 18Mb Density 2Mx8, 2Mx9, 1Mx18, 512kx36 Common Read and Write Data Port Dual Echo Clock Output
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IDT71P71204
IDT71P71104
IDT71P71804
IDT71P71604
1Mx18,
512kx36)
165-b
71P71104
71P71804
CQX 89
IDT71P71104
IDT71P71204
IDT71P71604
IDT71P71804
1N3M
6n39
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philips ferrite material specifications
Abstract: BD239 BY239 LXE15450X SC15 mlc444
Text: DISCRETE SEMICONDUCTORS DATA SHEET LXE15450X NPN microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor
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LXE15450X
SCA53
127147/00/02/pp12
philips ferrite material specifications
BD239
BY239
LXE15450X
SC15
mlc444
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PDF
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diode BY239
Abstract: BD239 BY239 LLE16045X
Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE16045X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors
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LLE16045X
SCA53
127147/00/02/pp12
diode BY239
BD239
BY239
LLE16045X
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PDF
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SMO-14
Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
Text: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication
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MIL-S-19500A1B(
2N425
2Nb26
-AO07
SMO-14
SLG 2016 D
2SK26
2N42
N4 TAM
marking aaae
2n427
GERMANIUM SMALL SIGNAL TRANSISTORS
2N426
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PDF
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BDT91
Abstract: BY239 LLE15370X
Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE15370X NPN microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors
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LLE15370X
SCA53
127147/00/02/pp12
BDT91
BY239
LLE15370X
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PDF
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LLE16350X
Abstract: BDT91 BY239
Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE16350X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 03 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors
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LLE16350X
SCA53
127121/00/04/pp12
LLE16350X
BDT91
BY239
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PDF
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS e m s y iiT BUS TDA8752 Triple high speed Analog-to-Digital Converter ADC Product specification Supersedes data of 1997 Jun 04 File under Integrated Circuits, IC02 Philips Sem iconductors 1998 Aug 11 PHILIPS Philips Semiconductors Product specification
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TDA8752
545104/1200/04/pp36
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PDF
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS e m s y iiT BUS TDA8752A Triple high-speed Analog-to-Digital Converter ADC Product specification Supersedes data of 1998 Dec 14 File under Integrated Circuits, IC02 Philips S e m ic o n d u c to rs 1999 Feb 24 PHILIPS Philips Semiconductors
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TDA8752A
545004/750/03/pp36
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PDF
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20V P-Channel Power MOSFET 500A
Abstract: HI-508A HI-509A MAX358 MAX358CJE MAX358CPE MAX358CWE MAX358EJE MAX358EPE MAX358EWE
Text: 1 9 -0 4 4 9 ; R e v 0 ; 4 /8 8 y k i > j x i > k i Fault-Protected Analog M ultiplexer _ F e atu res M a x im ’s H I-508A and M AX358 are 8 ch a n ne l sin g le ended 1 o f 8 m u ltip le xe rs w ith fa u lt p ro te ctio n .
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HI-508A
MAX358
HI-509A
MAX359
HI1-0508A-2
HI1-0508A-5*
HI3-0508A-5*
HI1-0509A-2
HI1-0509A-5*
HI3-0509A-5*
20V P-Channel Power MOSFET 500A
MAX358CJE
MAX358CPE
MAX358CWE
MAX358EJE
MAX358EPE
MAX358EWE
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PDF
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K034
Abstract: nopma KBAA cccp
Text: AKAÆEMHfl H A YK CCCP KOMHCCHfl nO npOEJIEMAM MHPOBOrO OKEAHA OTBeTCTBeHHLie pejjaKTOpw: axartcMHK JI.M î BpexoeCKux, floKTop fr m m io -MaTeMaTH'iecKHx H ayn H .E . A u d p e e e a MOCKBA ’’HAYKA” 1989 JIHTEPATypA 1. BpexoecKux JI.M. Bojihm b cjiohctux cpenax. M.: Hayica, 1957. 501 c.
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PDF
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817 CN
Abstract: CQ 817
Text: INTEGRATED CIRCUITS [M m SM EET Ihndj i U ni B U S ] TDA8752A Triple high-speed Analog-to-Digital Converter ADC Product specification File under Integrated Circuits, IC02 Philips Semiconductors 1998 Nov 03 PHILIPS PHILIPS Philips Semiconductors Product specification
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TDA8752A
TDA8752A
SCA60
/pp36
817 CN
CQ 817
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PDF
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SMD MARKING CODE 1am
Abstract: gy 615 smd st smd diode marking code VU diode SMD MARKING CODE 8E smd MARKING 8g marking JE 6 pin 1am smd smd 1AM 1AM DIODE smd diode marking sG
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1996 Apr 26 Philips Semiconductors 1999 May 17 PHILIPS Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257B PINNING FEATURES • Total power dissipation:
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PMBZ5226B
PMBZ5257B
MAM243
115002/00/02/pp12
SMD MARKING CODE 1am
gy 615 smd
st smd diode marking code VU
diode SMD MARKING CODE 8E
smd MARKING 8g
marking JE 6 pin
1am smd
smd 1AM
1AM DIODE
smd diode marking sG
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PDF
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Untitled
Abstract: No abstract text available
Text: STGD3NB60H N-CHANNEL 3A - 600V TO-252 PowerMESH IGBT TYPE STG D 3NB60H V CES V c E s a t lc 600 V < 2.8 V 3 A . HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) . L O W O N - V O L T A G E D R O P (Vcesat) . . . . . LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION
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STGD3NB60H
O-252
3NB60H
O-252)
0068772-B
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS THM91020L-85, 10, 12 'd e s c r i p t i o n ! The THM91 0 20L is a 1,048,576 words by 9 bits dynamic RAM module which assembled pcs of TC511 0 00J on b oth sides of the printed circuit board. The T H M 9 1 0 20L is optimized for application to the systems wh i c h are required high
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THM91020L-85,
THM91
TC511
THM91020L-85
THM91020L-199
C-200
C-202
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS THM 91022L-85, 10 , 12 [description ! The THM91022L is a 1,048,576 w o r d s b y 9 bits dynamic R A M m o d u l e w h i c h assembled 9 pcs of TC511002J on b o t h sides of the printed circuit board. The THM91022L is optimized for a p plication to the systems w h i c h are required
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91022L-85,
THM91022L
TC511002J
THM91022L-85
THM91022L-10
THM91022L-12
100ns
C-228
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PDF
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BAP50-05
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP50-05 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Feb 01 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-05 PINNING FEATURES • Tw o elem ents in com m on cathode configuration in a
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BAP50-05
BAP50-05
SCA61
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PDF
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BAP64-05
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Æm SIHIEET BAP64-05 Silicon PIN-diode Objective specification Philips Sem iconductors 1998 Dec 04 PHILIPS Philips Semiconductors Objective specification Silicon PIN-diode BAP64-05 PINNING FEATURES • High voltage, curre n t controlled.
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BAP64-05
BAP64-05
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PDF
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diode a62
Abstract: BAP51-03 diode smd ED 74 lm 9805
Text: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP51 -03 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP51-03 PINNING FEATURES • Low diode capacitance
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BAP51
BAP51-03
diode a62
BAP51-03
diode smd ED 74
lm 9805
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PDF
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BAP64-02
Abstract: v 817 y
Text: DISCRETE SEMICONDUCTORS Æ m SIHIEET BAP64-02 Silicon PIN-diode Objective specification Philips Sem iconductors 1998 Dec 04 PHILIPS Philips Semiconductors Objective specification Silicon PIN-diode BAP64-02 PINNING FEATURES • High voltage, curre n t controlled.
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BAP64-02
BAP64-02
MAM405
v 817 y
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PDF
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bap64-03
Abstract: lm 9805 DIODE ED 99
Text: DISCRETE SEMICONDUCTORS Æm SIHIEET BAP64-03 Silicon PIN-diode Objective specification Philips Sem iconductors 1998 Dec 04 PHILIPS Philips Semiconductors Objective specification Silicon PIN-diode BAP64-03 PINNING FEATURES • High voltage, curre n t controlled.
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BAP64-03
BAP64-03
lm 9805
DIODE ED 99
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PDF
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SMD diode sg 46
Abstract: SMD diode sg 03
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS
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BAP50-03
SCA61
SMD diode sg 46
SMD diode sg 03
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PDF
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7MBR50SA060
Abstract: D005
Text: This m a te ria l and tha Inform ation herein It the p roperty of the third express written Co„ L td . purposes w ith o u t consent of Fuji Electric party,nor used or the m anu facturing Fuji Electric CoJ.id,"They shall be neither reproduced, c o p ie d
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10I\I
7MBR50SA060
H04-004-07
H04-004-03
7MBR50SA060
D005
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PDF
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Untitled
Abstract: No abstract text available
Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BLV2045N UHF power transistor 1998 Apr 07 Preliminary specification Supersedes data of 1997 Oct 23 File under Discrete Semiconductors, SC19a Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification
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BLV2045N
SC19a
OT390A
125108/00/02/pp8
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