LP 8029
Abstract: DIN 7990 CQY 26 7922 diode cqy 35 n BPW17N CQY37N cqy 17
Text: CQY 37 N TELEFUNKEN Semiconductors GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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CQY37N
BPW17N
D-74025
LP 8029
DIN 7990
CQY 26
7922 diode
cqy 35 n
BPW17N
cqy 17
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LP 8029
Abstract: CQY 24 DIN 7990 diode 8638 cqy 17 BPW16N CQY36N
Text: CQY 36 N TELEFUNKEN Semiconductors GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.
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CQY36N
BPW16N
D-74025
LP 8029
CQY 24
DIN 7990
diode 8638
cqy 17
BPW16N
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TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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1N3245
1N3611GP
1N3612GP
1N3613GP
1N3614GP
1N3725
1N3957GP
1N4001GP
1N4002GP
1N4003GP
TCA780
TFK U 111 B
TFK U 4614 B
TFK S 186 P
TFK U 217 B
TFK BP w 41 n
TFK BPW 41 N
Tfk 880
TFK 148
TDSR 5150 G
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BPW16N
Abstract: CQY 24
Text: TELEFUNKEN Semiconductors BPW 16 N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are
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BPW16N
D-74025
CQY 24
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CQY 26
Abstract: BPW17N diode 8308
Text: TELEFUNKEN Semiconductors BPW 17 N Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are
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BPW17N
D-74025
CQY 26
diode 8308
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CQY36
Abstract: BPW16N BPW16
Text: BPW16N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable
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BPW16N
BPW16N
D-74025
15-Jul-96
CQY36
BPW16
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Siebensegmentanzeige
Abstract: cqy 17 CQY91A CQY 84 common kathode 7-segment CQY 65 CQY91K siebensegment cqy91 cqy92A
Text: « H CQY 91 A • CQY 91 K CQY 92 A • CQY 92 K CQY 93 A • CQY 93 K » 'W Rot-, grün- und gelbleuchtende Sieben-Segment-Anzeigen GaAsP und GaP Red, green and yellow Light Emitting Seven Segment Displays (GaAsP and GaP) Anwendung: Allgemeine Anzeigezwecke
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CQY86
Abstract: cqy 77 CQY 65 CQY87 V178P V179P V180P 2094V
Text: A CQY 85 • CQY 86 • CQY 87 V 1 7 8 P - V 1 7 9 P - V180P « n » 'W Rot-, grün- und gelbleuchtende Lumineszenzdioden GaAsP und GaP Red, green and yellow Light Emitting Diodes (GaAsP and GaP) Anwendung: Allgem eine Anzeigezwecke Application: General indicating purposes
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V178P
-V179P
-V180P
CQY86
cqy 77
CQY 65
CQY87
V179P
V180P
2094V
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cqy 17
Abstract: CQY 65 7718 cqy 89 cqy 89 a CQY75 CQY 40
Text: CQY 41 • CQY 73 • CQY 75 Rot-, grün- und gelbleuchtende Lumineszenzdioden GaAsP und GaP Red, green and yellow Light Emitting Diodes (GaAsP and GaP) Anwendung: A llgem eine Anzeigezwecke Application: General indicating purposes Besondere Merkmale: • M iniatur-Kunststoffgehäuse
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CQY74
Abstract: CQY40L CQY 40 CQY74L cqy 81 CQY 65 CQY 84 cqy 77 cqy40 Anzeige
Text: « "w CQY 4 0 L • CQY 72 L • CQY 74 L V 168 P • V 169 P V170P I 1 Rot-, grün- und gelbleuchtende Lumineszenzdioden GaAsP und GaP Red, green and yellow Light Emitting Diodes (GaAsP and GaP) Anwendung: Allgem eine Anzeigezwecke A p p lic a tio n : General indicating purposes
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V168P
V169P
V170P
CQY74L
CQY74
CQY40L
CQY 40
cqy 81
CQY 65
CQY 84
cqy 77
cqy40
Anzeige
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IR diodes TFK 4 245
Abstract: TFK 751 IR diodes TFK 4 940 TFK 940 IR diodes TFK 4 7313 28 pin TFK 925 TFK diodes CQY 65 TFK diodes application
Text: CQY 36 • CQY 37 Galiliumarsenid-Lumineszenzdioden Ga>4s Infrared Emitting Diodes Anw endung: Strahlungsquelle im nahen Infrarot-Bereich Application: Radiation source in near infrared range Besondere M erkm ale: Features: • Kunststoff-M iniaturgehäuse
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TFK 940
Abstract: TFK BPW 75 IR diodes TFK 4 245 TFK 925 cqy 17 IR diodes TFK 4 BPW 64 TFK BPW 14 C TFK BPW 20 diode tfk
Text: CQY 3 6 /9 • CQY 37/9 Neunteilige Galliumarsenid-Lumineszenzdiodenzeilen 9 Element GaAs Infrared Emitting Diodes Arrays Anwendung: Strahlungsquelle im nahen Infrarot-Bereich für Lochstreifenleser Application: Radiation source in near infrared range for tape readers
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DIN 50014
Abstract: tfk 248 CQY 248 CQY42 CQY 65
Text: . « I l » CQY 42 Optoelektronisches Koppelelement Optically Coupled Isolator Aufbau C o n stru ctio n Emitter: Detektor : GaAs-Lumineszenzdiode Silizium-NPN-Epitaxial-Planar-Fototransistor Anwendungen: Galvanische Trennung von Stromkreisen, Rückwirkungsfreier Schalter
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TFK BPW 75
Abstract: TFK 940 TFK 19 001 tfk bpw 77 tfk BPX 28 diode s .* tfk cqy 35 n TFK bpw BPW19 MB28C
Text: CQY 39 Zehnteilige Galliumarsenid-Lumineszenzdiodenzeile 10 Element GaAs Infrared Emitting Diodes Array Anwendung: Strahlungsquelle im nahen Infrarot-B ereich für Lochstreifenleser Application: Radiation source in near infrared range for tape readers Besondere Merkmale:
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mb-28
TFK BPW 75
TFK 940
TFK 19 001
tfk bpw 77
tfk BPX 28
diode s .* tfk
cqy 35 n
TFK bpw
BPW19
MB28C
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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BPW17
Abstract: tfk Phototransistor CQY 99
Text: S< BPW 16/9 • BPW 17/9 'V Neunteilige 9-Element Silicon NPN Epitaxial Planar Phototransistor Arrays Anwendungen: Lochstreifenabtastung A pplications: Punched card and tape readers Features: Besondere Merkmale:
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bpx28
Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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vz00
Abstract: cqy 81
Text: A fa = « r i M a n A M P ci o m p a n y 5-Bit Digital Attenuator 20-1000 MHz Features A T -lo a DI-3 • Attenuation 0.5 dFl Steps to 15 5 dB • 1.37 C34JI ±0.5 CMOS Control Interface • Internal Latch oh Control input • Hermetic Case Guaranteed Specifications*
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C34JI
vz00
cqy 81
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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5202 GE
Abstract: KA 7502 STS7102 TS7101
Text: TELEFUNKEN ELECTRONIC m 44E » ñ ^ D O T b 0011175 2 B1ALG6 Infrared Emitting Diodes G aA s IR Emitting Diodes in Plastic Package Characteristics Package Type I. Dimensions see page 4 9 -5 3 at at U mW/sr mA fp= 1 0 y s /F = 1 A ns mA TV* 1 8 m m Blue p la stic p a c ka ge
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CQY37N
5202 GE
KA 7502
STS7102
TS7101
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
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CQY80
Abstract: VR BH RC CQY 95 CQY80NG
Text: Temic CQY80N G S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The CQY80N(G) series consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.
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CQY80N
D-74025
12-Dec-97
CQY80
VR BH RC
CQY 95
CQY80NG
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TCHT1130
Abstract: Ex-90C
Text: J TELEFUNKEN ELECTRONIC 4ME D HH fi^GO^ti 001117= T E i ALG6 Optocouplers ' T ' H I - $ "J? Standard Opto Isolators w ith Transistor Output Package Type C haracteristics UL-recognized: CTR File No. E 76414 Dimensions see page 56 - _ i j bW 1T T m N ; liJ
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TCHT1130
0806/IE
601-0860/IEC
TCHT1130
Ex-90C
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