SEMPO ELECTRONIC
Abstract: DT 94 SMDT-130 SMDT-130-08 SMDT-130-12 SMDT-130-14 SOFT starter 13018
Text: SMDT-130 Diode-Thyristor Module Type SMDT-130-08 SMDT-130-12 SMDT-130-14 SMDT-130-16 SMDT-130-18 µ ITM, ITSM, di/dt cr (dv/dt)cr V TM IFSM IFM VTÎ rT 900 1300 1500 1700 1900 800 1200 1400 1600 1800 tq VGT IGT TVJM Visol RthJC O kA µ Type ITAVM, ITRMS, T
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SMDT-130
SMDT-130-08
SMDT-130-12
SMDT-130-14
SMDT-130-16
SMDT-130-18
SMDT-130
SEMPO ELECTRONIC
DT 94
SMDT-130-08
SMDT-130-12
SMDT-130-14
SOFT starter
13018
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DT 94
Abstract: SMDT-160 SMDT-160-08 SMDT-160-12 SMDT-160-14
Text: SMDT-160 Diode-Thyristor Module Type SMDT-160-08 SMDT-160-12 SMDT-160-14 SMDT-160-16 SMDT-160-18 µ ITM, ITSM, di/dt cr (dv/dt)cr V TM IFSM IFM C kA µ Type ITAVM, ITRMS, T C IFAVM IFRMS A/ s V/ s SMDT-160 165 355 85 4.8 150 500 A A O V VTÎ A V VRRM , VDRM
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SMDT-160
SMDT-160-08
SMDT-160-12
SMDT-160-14
SMDT-160-16
SMDT-160-18
SMDT-160
DT 94
SMDT-160-08
SMDT-160-12
SMDT-160-14
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SMD transistor UY
Abstract: smd optocoupler cop 200 transistor irf 630 transistor smd CR gy 615 smd 152,GY CR50TEA dual led 660 940 red infrared smd transistor GY smd rgb
Text: LIGHT EMITTING CHARACTERISTICS ELCOS GmbH, well known as the first manufacturer of SMD components in Optoelectronics, has now completed it’s portfolio from the smallest single colour-package the CERLED onto the “semicustom” multichip package (the EUROLED). Regarding Standard Products the policy of ceramic substrates and moulded encapsulation gave the
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Simple PSpice Models Let You Simulate Common Battery
Abstract: 220 microfarad 12v capacitor inductors 33 micro henry transistor 2S D 716 inductors 10 micro henry 330 micro henry MEPCO electra 104 TANTALUM capacitor Cer cap 100uf 4600 fet transistor
Text: TECHNICAL INFORMATION INCREASING RELIABILITY OF SMD TANTALUM CAPACITORS IN LOW IMPEDANCE APPLICATIONS by David Mattingly Applications Engineer Myrtle Beach, SC Abstract: High dv/dt conditions in low impedance circuits using surface mount tantalum capacitors is discussed.
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5M994-N
Simple PSpice Models Let You Simulate Common Battery
220 microfarad 12v capacitor
inductors 33 micro henry
transistor 2S D 716
inductors 10 micro henry
330 micro henry
MEPCO electra
104 TANTALUM capacitor
Cer cap 100uf
4600 fet transistor
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factors on which internal internal resistance of a cell depends experiment
Abstract: Simple PSpice Models Let You Simulate Common Battery 104 TANTALUM capacitor nec capacitor 220 microfarad A 16V avx taj MOSFET 2906 100NS LTC1154 22UF 47UH
Text: TECHNICAL INFORMATION INCREASING RELIABILITY OF SMD TANTALUM CAPACITORS IN LOW IMPEDANCE APPLICATIONS by David Mattingly Applications Engineer Myrtle Beach, SC Abstract: High dv/dt conditions in low impedance circuits using surface mount tantalum capacitors is discussed.
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5M994-N
factors on which internal internal resistance of a cell depends experiment
Simple PSpice Models Let You Simulate Common Battery
104 TANTALUM capacitor nec
capacitor 220 microfarad A 16V
avx taj
MOSFET 2906
100NS
LTC1154
22UF
47UH
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Untitled
Abstract: No abstract text available
Text: SMD ESD Protection Diode SMD Diodes Specialist CPDH3V3UP RoHS Device Features SOD-523 IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). 0.051(1.30) 0.043(1.10) Working voltage: 3.3V Low leakage current. 0.033(0.85) 0.030(0.75) 0.014(0.35) 0.010(0.25) Low operating and clamping voltages.
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OD-523
IEC61000-4-2
OD523
MIL-STD-750
QW-BP022
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smd code marking e3
Abstract: marking code E3 SMD diode DIODE smd marking E3 marking code E3 SMD smd code CR smd code marking sb diode smd marking 51 transistor smd marking 94 Diode marking code e3 SMD MARKING CODE 7 sb
Text: SMD ESD Protection Diode SMD Diodes Specialist CPDH3V3UP-HF RoHS Device Features IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). SOD-523 Working voltage: 3.3V Low leakage current. 0.008(0.20) REF 0.051(1.30) 0.043(1.10) Low operating and clamping voltages.
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IEC61000-4-2
OD-523
OD-523
MIL-STD-750,
QW-JP018
smd code marking e3
marking code E3 SMD diode
DIODE smd marking E3
marking code E3 SMD
smd code CR
smd code marking sb
diode smd marking 51
transistor smd marking 94
Diode marking code e3
SMD MARKING CODE 7 sb
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diode smd marking e3v3
Abstract: cr diode smd SMD MARKING CODE 7 sb smd *7027 marking sb diode
Text: SMD ESD Protection Diode SMD Diodes Specialist CPDU3V3UP RoHS Device Features IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). 0603(1608) Working voltage: 3.3V 0.071(1.80) 0.063(1.60) Low leakage current. Low operating and clamping voltages. 0.039(1.00) 0.031(0.80)
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IEC61000-4-2
MIL-STD-750
U/0603
QW-A7027
diode smd marking e3v3
cr diode smd
SMD MARKING CODE 7 sb
smd *7027
marking sb diode
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CPDH3V3UP
Abstract: transistor smd marking 94 QW-BP022 diode smd marking e3v3 smd marking code pp MARKING KV SOD523 SMD CODE KW 1 smd code marking sb SMD MARKING CODE 7 sb smd 523
Text: SMD ESD Protection Diode SMD Diodes Specialist CPDH3V3UP RoHS Device Features SOD-523 IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). 0.051(1.30) 0.043(1.10) Working voltage: 3.3V Low leakage current. 0.033(0.85) 0.030(0.75) 0.014(0.35) 0.010(0.25) Low operating and clamping voltages.
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OD-523
IEC61000-4-2
OD-523
MIL-STD-750
QW-BP022
CPDH3V3UP
transistor smd marking 94
QW-BP022
diode smd marking e3v3
smd marking code pp
MARKING KV SOD523
SMD CODE KW 1
smd code marking sb
SMD MARKING CODE 7 sb
smd 523
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Untitled
Abstract: No abstract text available
Text: SMD ESD Protection Diode SMD Diodes Specialist CPDVR083V3U RoHS Device Features IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). SOT-383F(VR8) Working voltage: 3.3V 0.086(2.20) 0.079(2.00) Low leakage current. Low operating and clamping voltages. Mechanical data
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CPDVR083V3U
IEC61000-4-2
OT-383F
MIL-STD-750
QW-BP027
OT-383F
QW-BP027
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Untitled
Abstract: No abstract text available
Text: SMD ESD Protection Diode SMD Diodes Specialist CPDVR083V3P RoHS Device Features IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). SOT-383F(VR8) Working voltage: 3.3V 0.086(2.20) 0.079(2.00) Low leakage current. Low operating and clamping voltages. Mechanical data
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CPDVR083V3P
IEC61000-4-2
OT-383F
MIL-STD-750
QW-A7017
OT-383F
CPDVR083V3P
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CPDVR083V3U
Abstract: SOT-383F
Text: SMD ESD Protection Diode SMD Diodes Specialist CPDVR083V3U RoHS Device Features IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). SOT-383F(VR8) Working voltage: 3.3V 0.086(2.20) 0.079(2.00) Low leakage current. Low operating and clamping voltages. Mechanical data
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CPDVR083V3U
IEC61000-4-2
OT-383F
MIL-STD-750
QW-BP027
OT-383F
CPDVR083V3U
SOT-383F
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CPDVR083V3UA-HF
Abstract: No abstract text available
Text: SMD ESD Protection Diode SMD Diodes Specialist CPDVR083V3UA-HF RoHS Device Features Halogen free. SOT-383F VR8 IEC61000-4-2 (ESD)±15kV(Contact),±20kV(Air). 0.086(2.20) 0.079(2.00) Working voltage: 3.3V Low leakage current. Low operating and clamping voltages.
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CPDVR083V3UA-HF
OT-383F
IEC61000-4-2
MIL-STD-750
OT-383F
QW-G7023
CPDVR083V3UA-HF
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Untitled
Abstract: No abstract text available
Text: SMD ESD Protection Diode SMD Diodes Specialist CPDVR083V3U RoHS Device Features IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). SOT-383F(VR8) Working voltage: 3.3V 0.086(2.20) 0.079(2.00) Low leakage current. Low operating and clamping voltages. Mechanical data
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CPDVR083V3U
IEC61000-4-2
OT-383F
MIL-STD-750
OT-383F
QW-A7019
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BZX284-B11 T/R
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Voltage regulator diodes BZX284 series FEATURES DESCRIPTION • Total power dissipation: max. 400 mW Low-power voltage regulator diodes in a small ceramic SMD SOD110 package. The diodes are available in the normalized E24 ±2% BZX284-B and ±5%
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BZX284
OD110
BZX284-B)
BZX284-C)
MAM219
OD110)
BZX284-B11 T/R
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 10.4M09 °|SQUARE - PAK TO-263AB SMD) Packaged in 24nun Tape and : C10T* *Q Reel 4.BU39) C10T10Q C10T10Q-11A 1.4(.055) _J ÎIOTT f 1060417) I 9.6(.378) 8.50335) 4.0(.157) 3.0(.118) 10.1(.398)l o Tabless T0-220: C10T*»Q-11A ° Dual Diodes — Cathode Common
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O-263AB
24nun
C10T10Q
C10T10Q-11A
T0-220:
Q-11A
C10T09Q
C10T09Q-11A
1A/90â
bblS153
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LL4148 melf
Abstract: BKC Semiconductors DSAIH0002549
Text: LL4148 or MINI-MELF-SMD Silicon Switching Diode 1N4148UR-1 Applications 1N4148UR-1 BCP Used in general purpose applications, where performance, space and switching speed are important. This Best Commercial Practice part is assembled on the same exacting line as our /116 military level products.
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LL4148
1N4148UR-1
1N4148UR-1
LL-34/35
DO-35
Mil-S-19500/116
1N4148-1
DO-35glass
LL4148 melf
BKC Semiconductors
DSAIH0002549
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Ceramic Capacitors 104
Abstract: disc Piezoelectric Sensor piezoelectric shock sensor smd Active Filters "disc Piezoelectric Sensor TV flyback ferrite Capacitors 104 piezoelectric film sensor 104 Ceramic Disc Capacitors piezoelectric ceramic sensor
Text: INDEX Minimum Quantity* Guide CHIP PRODUCTS 4-5 CHIP TYPE/SMD TYPE SELECTION GUIDE 6-8 EMI SUPPRESSION PRODUCTS / EMI FILTERS EMIFIL EMIFIL®/ EMIGUARD® RC/C MODULES FREQUENCY RANGE GUIDE.10 F E R R IT E CORE<5 r a I pn
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Untitled
Abstract: No abstract text available
Text: iia / 20~ SCHOTTKY BARRIER DIODE 30v c Ìo tS Iq l-u a ° SQUARE - PAk [ TO-263AB (SMD Packaged in 24mm Tape and Reel : C10T*QL ° Tabless T0-220:CIOT*«QL-11A »Dual Diodes— Cathode Common 0 Low Forward Voltage Drop ° High Surge Capability 0 20 Volts thru 100 Volts
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O-263AB
T0-220
QL-11A
C10T02QL
C10T02QL-11A
C10T03QL
C10T03QL-11A
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Untitled
Abstract: No abstract text available
Text: □IXYS Advanced Technical Data Power Schottky Rectifier DSS 16 iFAV V RRM = 16 A = 35 - 45 V mm TO-220 AC TO-263 SMD S-Type V RSM V V 35 45 Symbol Test Conditions Maximum Ratings (per diode) rms Tc = 130°C; rectangular, d = 0.5 UsM tp = 10 ms Eas Ias = 1 5 A ; L = 1 8 0 h H ; T vj = 25°C ; non repetitive
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O-220
16-0035B
16-0045B
O-263
1250C
D-68623
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.24n50
Abstract: xgh2 IXGH24N50BU1 IXGH24N60BU1
Text: Preliminary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES *C 25 VCE(sat) t. 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack T0-247 SMD (24N*BU1 S) Symbol TestConditions I C (TAB) Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C
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IXGH24N50BU1
IXGH24N60BU1
T0-247
24N50
24N60
.24n50
xgh2
IXGH24N60BU1
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BZ 6V2
Abstract: "Voltage Regulator Diodes" BZV55 Series smd diode UJ 64 A ST c6v8 BZV55
Text: Product specification Philips Semiconductors Voltage regulator diodes BZV55 series FEATURES DESCRIPTION • Total power dissipation: max. 500 mW Low-power voltage regulator diodes in small hermetically sealed glass SOD 8OC SMD packages. The diodes are available in the normalized E24±2%
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BZV55
711005b
BZ 6V2
"Voltage Regulator Diodes"
BZV55 Series
smd diode UJ 64 A
ST c6v8
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smd diode marking F1
Abstract: CDSV3-19-G smd KT2 smd marking G
Text: C0A\CHir SMD Switching Diode S M D D io d e s S p e c ia lis t CDSV3-19-G/20-G/21-G High Speed RoHS Device % Features SO T -323 -F ast s w itching diode. 0 .0 8 7 2 . 2 0 0 .0 7 0 (1 .8 0 ) ' -S u rfa c e m ount package ideally fo r a u to m a tic insertion.
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CDSV3-19-G/20-G/21
OT-323
MIL-STD-750,
CDSV3-19-G
CDSV3-20-G
CDSV3-21
200mA
QW-B0025
CDSV3-19-G/20-G/21-G)
smd diode marking F1
smd KT2
smd marking G
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transistor smd CR
Abstract: STETTNER stettner inC stetco stetco ceramic
Text: „ . STETCO INC TMD D | fibSm a S f y w / » - . 1•" -m ? -’ v -vvv^yf; 0003516 M | mxVFVF"' ‘ I Telefon 09123/181-1 S* "STETTNER&CO. Electronic Division Telefax 09123/81235 Ceramic ChÏD Leds- CERLED$,V D 856 0Lauf ' ’ tq Iqv 623385 o *a>v>i «.
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