MARKING EA1 sot-23
Abstract: SOT-23 EA1 sot-23 MARKING GU GY SOT-23 RF1 marking limiter diode APD0520-000 marking GD DMJ3952-020 EA1 sot-23 MARKING EA1
Text: Diodes LIMITER DIODES Plastic Packaged Silicon Limiter Diodes Part Number VB IR = 10 µA V CT (pF) 0 V, F = 1 MHz CT (pF) 0 V F = 1 GHz RS IF = 10 mA Ω) F = 100 MHz (Ω Carrier Lifetime TL (ns) IF = 10 mA Package SMP1330 Series 20–50 0.7 Typ., 1.0 Max.
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SMP1330
OT-23
SMP1330-005LF
SMP1330-007LF
CLA4601-000
CLA4602-000
CLA4603-000
CLA4604-000
MARKING EA1 sot-23
SOT-23 EA1
sot-23 MARKING GU
GY SOT-23
RF1 marking limiter diode
APD0520-000
marking GD
DMJ3952-020
EA1 sot-23
MARKING EA1
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BAT17-07
Abstract: VPS05178
Text: BAT17-07 Silicon Schottky Diode 3 For mixer applications in the VHF / UHF range For high-speed switching applications 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAT17-07 57s Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings
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BAT17-07
VPS05178
EHA07008
OT143
EHD07108
EHD07109
Jul-31-2001
BAT17-07
VPS05178
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a3 sot143
Abstract: BAR60 BAR61 VPS05178 MARKING 61s
Text: BAR60, BAR61 Silicon PIN Diodes 3 RF switch, RF attenuator for frequencies above 10 MHz 4 2 BAR60 BAR61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 Type Marking Pin Configuration Package BAR60 60s 1=C1/A2/C3 2 = C2 3 = A3 4 = A1 SOT143 BAR61 61s 1=C2/C3
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BAR60,
BAR61
BAR60
VPS05178
EHA07013
EHA07014
OT143
a3 sot143
BAR60
BAR61
VPS05178
MARKING 61s
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Untitled
Abstract: No abstract text available
Text: BAW101. Silicon Switching Diode Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value
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BAW101.
BAW101
OT143
Applicati00
EHN00019
Feb-03-2003
EHB00104
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BAW101
Abstract: No abstract text available
Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value
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BAW101.
BAW101
OT143
EHN00019
Sep-24-2003
EHB00104
100mA
BAW101
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marking JTs
Abstract: BAS28 BAS28W
Text: BAS28. Silicon Switching Diode For high-speed switching applications Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28W,
BAS28,
marking JTs
BAS28
BAS28W
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Untitled
Abstract: No abstract text available
Text: BGX50A. Silicon Switching Diode Array Bridge configuration High-speed switching diode chip BGX50A 4 3 D 3 D 4 D 2 D 1 1 2 Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BGX50A.
BGX50A
OT143
Feb-03-2003
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Untitled
Abstract: No abstract text available
Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value
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BAW101.
BAW101
OT143
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Untitled
Abstract: No abstract text available
Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value
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BAW101.
BAW101
OT143
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sot143 marking code u1s
Abstract: No abstract text available
Text: BGX50A. Silicon Switching Diode Array • Bridge configuration • High-speed switching diode chip BGX50A " ! , ! , " , , Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BGX50A.
BGX50A
OT143
sot143 marking code u1s
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Untitled
Abstract: No abstract text available
Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAW101 " ! , , Type Package Configuration Marking BAW101 SOT143 parallel JPs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAW101.
BAW101
OT143
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sot143 marking code u1s
Abstract: BFP181 BGX50A E6327
Text: BGX50A. Silicon Switching Diode Array Bridge configuration High-speed switching diode chip BGX50A 4 3 D 3 D 4 D 2 D 1 1 2 Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BGX50A.
BGX50A
OT143
sot143 marking code u1s
BFP181
BGX50A
E6327
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BAW101
Abstract: BFP181
Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 " ! , , Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage
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BAW101.
BAW101
OT143
50/60Hz,
BAW101
BFP181
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BAW101
Abstract: BFP181
Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAW101 " ! , , Type Package Configuration Marking BAW101 SOT143 parallel JPs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAW101.
BAW101
OT143
BAW101
BFP181
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Untitled
Abstract: No abstract text available
Text: BGX50A. Silicon Switching Diode Array • Bridge configuration • High-speed switching diode chip • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BGX50A " ! , ! , " , , Type BGX50A Package SOT143 Configuration bridge Marking
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BGX50A.
BGX50A
OT143
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Diode BGX50A
Abstract: sot143 marking code u1s BFP181 Marking code U1s BGX50A
Text: BGX50A. Silicon Switching Diode Array • Bridge configuration • High-speed switching diode chip • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BGX50A " ! , ! , " , , Type BGX50A Package SOT143 Configuration bridge Marking
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BGX50A.
BGX50A
OT143
Diode BGX50A
sot143 marking code u1s
BFP181
Marking code U1s
BGX50A
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LNA ku-band
Abstract: ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz
Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions Wireless Infrastructure 2 Basestation Radiocard 2 Basestation Low Noise Amplifier LNA 3 Basestation Tower Mounted Amplifier (TMA) 3 Basestation Multi-carrier Power Amplifier (MCPA)
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11a/b/g)
5988-9866EN
LNA ku-band
ku-band pll lnb
AT-64020
microwave transmitter 10GHz
MGA-725M4
micro-X ceramic Package lna fet
gaas fet 70 mil micro-X Package
HSMS-2850
HSCH-9401
900-1700MHz
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IR 1838 3v
Abstract: SMV1146-001 SMV1141-011
Text: Frequency Linear Hyperabrupt Tuning Varactors SMV1141 to SMV1148 Features • Increasing Gamma Design for Improved Linearity ■ Low Inductance Surface Mount SOD-323 and SOT-23 Packages ■ Specified Low RS ■ Designed for High Volume, Low Cost Applications
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SMV1141
SMV1148
OD-323
OT-23
IR 1838 3v
SMV1146-001
SMV1141-011
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transistor L44
Abstract: chip die npn transistor ma4t856 l44 transistor npn C 1740
Text: V a n A M P ct o m p a n y Moderate Power High fT NPN Silicon Transistor MA4T856 Series V3.00 Package Outline Features • High Output Power - 16 dBm PidB @ 1 GHz - 10 dBm PldB @ 2 GHz • High Gain Bandwidth Product • 8-9 GHz fx • High Power Gain - IS21EI2 = 15 dB @ 1 GHz
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IS21EI2
MA4T856
OT-23
OT-143
avail-8883
transistor L44
chip die npn transistor
l44 transistor
npn C 1740
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SOT23 6 PA
Abstract: om sot23-5 SOT23 JE pa sot23-5 sot23-6 pa JE SOT23
Text: ADVANCE INFORMATION All inform ation in this data sheet is prelim inary and su b je ct to change. , V M X X iy M VHF-to-M icrow ave +3V, Low-Noise A m plifiers 10/96 _ G eneraI Description The M A X 2 6 3 0 /M A X 2 6 3 1/M A X 2632/M A X 2633 are lowv o lta g e , lo w -n o is e a m p lifie r s fo r use fro m VH F to
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MAX2630/MAX2631)
MAX2632/MAX2633)
MAX2631/MAX2633)
2632/M
900MHz.
MAX2630
OT23-5
MAX2631
OT143
MAX2632
SOT23 6 PA
om sot23-5
SOT23 JE
pa sot23-5
sot23-6 pa
JE SOT23
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BFQ65
Abstract: BFQ67 X3A-BFQ65 BFG67
Text: P h ilip s Sem icon d u ctors Produ ct specification -T=3i-so NPN 8 GHz wideband transistor crystal PHILIPS INTERNATIONAL SbE D X3A-BFQ65 • 71106Sfc. QOHbCHb S'lb « P H I N M E C H A N IC A L DATA DESCRIPTION NPN crystal used in BFQ 65 SOT37 , BFG67 (SOT143)
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X3A-BFQ65
71106Sb
BFQ65
BFG67
OT143)
BFQ67
X3A-BFQ65
URV-3-5-52/733
BFQ65
BFQ67
BFG67
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IEC-134
Abstract: BFR540 transistor d 1264 BFG541 X3A-BFR540 BFG540 IEC134
Text: P h ilip s Sem icon d u ctora P rodu ct sp ecification NPN 9 GHz wideband transistor crystal PHILIPS INTERNATIONAL ^ 3 SbE D DESCRIPTION BCDC>,n A3A-BFR540 m TllDfiEb OOMblD? ITI • PHIN M E C H A N IC A L DATA NPN crystal used in BFR540 SOT23 , BFG540 (SOT143) and BFG541 (SOT223). Crystals are supplied
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BFR540
BFG540
OT143)
BFG541
OT223)
X3A-BFR540
X3A-BFR540
711002b
15iim
RV-3-5-52/733
IEC-134
BFR540
transistor d 1264
BFG541
BFG540
IEC134
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BFG520
Abstract: X3A-BFR520 SOT173 BFP520 BFR520 SOT-173
Text: P h ilip s S em icon du ctors Produ ct specification •T'3 1-9-0 NPN 9 GHz wideband transistor crystal X3A-BFR520 StE » PHILIPS INTERNATIONAL DESCRIPTION 711DfiEb DDMblOb 2b5 M E C H A N IC A L DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied
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X3A-BFR520
BFR520
BFG520
OT143)
BFP520
OT173)
X3A-BFR520
711DfiEb
RV-3-5-52/733
BFG520
SOT173
BFP520
BFR520
SOT-173
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SMV1299-001
Abstract: SMV1228-001 SMV1421-001 SMV1206-011 SMV1222-001 SMV1225-001 SMV1206-001 SMV1229-001 SMV125 SMV1223
Text: Plastic Packaged Surface Mount Varactor Diodes EBAlpha Features Industry Standard Outlines: SOD-323 and SOT-23 Packages High “Q” Abrupt and Hyperabrupt Junction Designs Single, Common Anode and Common Cathode Configurations Available for 3 Volt Battery Operated Circuits
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OD-323
OT-23
15jnm
OT-143
SMV1299-001
SMV1228-001
SMV1421-001
SMV1206-011
SMV1222-001
SMV1225-001
SMV1206-001
SMV1229-001
SMV125
SMV1223
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