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    CWCR0805 Search Results

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    CWCR0805 Price and Stock

    TT Electronics plc WCR-WCR0805LF-7322-D-P-LT

    Thick Film Resistors - SMD 73.2K OHM .5%
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    TTI WCR-WCR0805LF-7322-D-P-LT Reel 90,000 5,000
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    • 10000 $0.0253
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    TT Electronics plc WCR-WCR0805LF-8253-F-P-LT

    Thick Film Resistors - SMD 825K OHM 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI WCR-WCR0805LF-8253-F-P-LT Reel 45,000 5,000
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    • 10000 $0.0102
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    TT Electronics plc WCR-WCR0805LF-2001-F-P-LT

    Thick Film Resistors - SMD 2K OHM 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI WCR-WCR0805LF-2001-F-P-LT Reel 30,000 5,000
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    TT Electronics plc WCR-WCR0805LF-1003-F-P-LT

    Thick Film Resistors - SMD 100K OHM 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI WCR-WCR0805LF-1003-F-P-LT Reel 50,000
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    TT Electronics plc WCR-WCR0805LF-1002-F-P-LT

    Thick Film Resistors - SMD 10K OHM 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI WCR-WCR0805LF-1002-F-P-LT Reel 50,000
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    Find more CWCR0805 price and stock on Findchips.com

    CWCR0805 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26P100â

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT26P100−4WS Rev. 1, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26P100â

    ATC600F470BT250XT

    Abstract: ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 1, 4/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of


    Original     		PDF AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 DataAFT05MS031N 4/2013Semiconductor, ATC600F470BT250XT ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor