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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: ChenYang Technologies GmbH & Co. KG GaAs HALL EFFECT ELEMENTS CYSJ series Hall-effect element is a ion-implanted magnetic field sensor made of mono-crystal gallium arsenide GaAs semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal	Original	PDF	D-85464 CYSJ411 OT-143) CYSJ422 OT-143-1) CYSJ119

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG GaAs HALL EFFECT ELEMENTS CYSJ series Hall-effect element is a ion-implanted magnetic field sensor made of mono-crystal gallium arsenide GaAs semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal

Original

PDF

D-85464 CYSJ411 OT-143) CYSJ422 OT-143-1) CYSJ119