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    D 44 NPN Search Results

    D 44 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    D 44 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    powertrain controller

    Abstract: ecu sensors capacitor 685 35K MC33394 SW11 capacitor chip 685 35K
    Text: MOTOROLA Order Number: MC33394/D Rev. 0, 06/2001 SEMICONDUCTOR TECHNICAL DATA Advance Information PowerOak MC33394 MCU Companion — Voltage Regulators + CAN Transceiver + Reset 44–Lead HSOP Plastic Package 1291–01 44–Lead QFN Plastic Package 1310–01


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    MC33394/D MC33394 powertrain controller ecu sensors capacitor 685 35K MC33394 SW11 capacitor chip 685 35K PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4840/44-DEMO Si4840/44 D EMO B OARD U SER ’ S G UIDE 1. Features  ATDD analog tune and digital display FM/AM/SW radio  Worldwide FM band support from 64 to 109 MHz with 5 default sub-bands: FM1 FM2 FM3 FM4 FM5 


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    Si4840/44-DEMO Si4840/44 PDF

    NCP4115

    Abstract: NCP4100 200v npn 3a d2pak NCP1450 Bipolar Power Transistor Data 400V igbt dc to dc buck converter 12V to 300V dc dc converter step-up NCP1650 NCP1204 DL135
    Text: Rev. 10, 3Q02 SGD503/D POWER MANAGEMENT SOLUTIONS ANALOG PRODUCTS DC/DC: Multiphase Controllers DEVICE NCP5316 NCP5332A POWER MANAGEMENT SOLUTIONS ANALOG cont. GATE DRIVE External On-chip COMPLIANCE VRM 10 VRM 9.0 PACKAGE AVAILABILITY QFN-44 7*7 4Q02 SO-28W


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    SGD503/D NCP1450 NCP1550 CS5211 CS5212 NCP1570 NCP1571 200ve r14525 ONS80126-10 NCP4115 NCP4100 200v npn 3a d2pak Bipolar Power Transistor Data 400V igbt dc to dc buck converter 12V to 300V dc dc converter step-up NCP1650 NCP1204 DL135 PDF

    74C10

    Abstract: 7107 SC7107 SC7106 VSC7107 CD4023 9a240
    Text: SC7106/7107 33/4 SC7106 LCD 3620- SC7107 A/D A/D SC7106 LCD SC7107 SC7106 DIP-40-600-2.54 LED SC7107 10µV 1µV/°C 10pA QFP-44-10 x10-0.8 LCD SC7106 * * 1pA * LCD SC7106 LED * SC7107 15µVp-p * * 10mW * °C SC7106CPL 0~70 DIP-40-600-2.54 SC7106RCPL 0~70


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    SC7106/7107 SC7106 SC7107 DIP-40-600-2 QFP-44-10 x10-0 74C10 7107 SC7107 SC7106 VSC7107 CD4023 9a240 PDF

    diode zener c25

    Abstract: diode zener c29 zener DIODE C25 transistor c323 zener diode c18 st ST transistor c322 z5 zener diode diode zener c23 diode zener c26 zener diode c32
    Text: AN15 D E S I G N C O N S I D E R A T I O N S F O R T H E S I 303 4/38/4 4 Introduction The Si3034/38/44 direct access arrangement DAA provides worldwide compliance for modems and other communications equipment that is connected to analog telephone networks. Many different standards exist to


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    Si3034/38/44 Si3034/ IEC1000-4 diode zener c25 diode zener c29 zener DIODE C25 transistor c323 zener diode c18 st ST transistor c322 z5 zener diode diode zener c23 diode zener c26 zener diode c32 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BUL44/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L 44* BUL44F* SW ITCH MODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘ Motorola Preferred Device POWER TRANSISTOR 2.0 AMPERES


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    BUL44/D BUL44F* BUL44/BUL44F BUL44F 221D-02 O-220 PDF

    NPN Transistor isolated T0-220

    Abstract: No abstract text available
    Text: Order this data sheet by BUL44/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA B U L 44 B U L 44F Designer’s Data Sheet SW ITCHMODE™ M o to ro la P referre d D e vices NPN Bipolar Power TVansistor For Sw itching Pow er Supply Applications POWER TRANSISTOR 2.0 AMPERES


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    BUL44/D BUL44/BUL44F T0-220 T0-220 BUL44 21A-06 O-220AB 221D-01 221D-02. BUL44F NPN Transistor isolated T0-220 PDF

    VTT0842

    Abstract: VTT0843 VTT0844
    Text: SbE J> 3 D 3D b O *î ÜO D 117b .040" NPN Phototransistors & G VACTEC I VCT V T T 0 8 4 2 , 43, 44 Low Cost Hermetic TO-18 Lensed Pkg E 6 fi'ìS . - 1 PACKAGE DIMENSIONS inch mm 0 $ ( 5 .2 3 )


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    OD117b VTT0842, VTT0842 VTT0843 VTT0844 PDF

    a 933 transistor

    Abstract: BFR90A 2912 TRANSISTOR PNP bfr90A philips BFQ51 3FR90 mcd001
    Text: Philips Semiconductors Product specification 7 = 3 A -/7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE D ^ BFR90A 7110fi5Li □D4St.cì2 44Ì M P H I N PINNING • Low noise • Low intermodulation distortion PIN • High power gain 1 •


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    BFR90A 711062Li ON4184) BFQ51. a 933 transistor BFR90A 2912 TRANSISTOR PNP bfr90A philips BFQ51 3FR90 mcd001 PDF

    XR-M100

    Abstract: XR-1488 XR-494 XR-1488N XR-1488P XR-1489A XR-1489AN XR-1489AP EXAR XR
    Text: EXAR 3422618 EXAR CORP Tl dË CORP XR-M100 Master-Chip NPN Transistors Chip Size: 176 x 121 mils Small Signal: 137 Total Components: 840 Low Noise: 4 Bonding Pads: 28 Max. Operating Voltage: 20V Medium: 4 Large: 4 PNP Transistors Lateral: 44 Quad Collector: 8


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    XR-M100 60kil: 200ii: 450fi: 900fl: 712kfl XR-1488/1489A XR-1488 designed568M XR-1568/XR-1468C XR-494 XR-1488N XR-1488P XR-1489A XR-1489AN XR-1489AP EXAR XR PDF

    Untitled

    Abstract: No abstract text available
    Text: EXAR 3422618 EXAR CORP Tl dË CORP 91D XR-M100 Master-Chip Chip Size: 176 x 121 mils Total Components: 840 Bonding Pads: 28 Max. Operating Voltage: 20V J BMEEbia NPN Transistors Small Signal: 137 Low Noise: 4 Medium: 4 Large: 4 PNP Transistors Lateral: 44


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    XR-M100 XR-1488/1489A CR-1468/1568 XR-1468/1568 PDF

    2N6078

    Abstract: No abstract text available
    Text: MOTOROLA SC -CDIODES/OPTO} 34 ]>E.| b3b7255 0037^44 T f §337255 M O T O R O L A SC D I O D E S /O P T O 34C 3 7 9 4 4 D T '3 3 '0 1 SILICON POWER TRANSISTOR DICE (continued) 2C6235 DIE NO. — NPN LINE SOURCE — PL500.746 This die provides performance equal to or better than that of


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    b3b7255 PL500 2N6077 2N6078 2N6233 2N6234 2N6235 2C6235 PDF

    ge d44h11

    Abstract: D44* general electric npn to-220 D44H5 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8 D45H1
    Text: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE Type NPN V CEO Min. V •c Cont. (A I 50 30 50 PNP M in. M in. 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2 - D 45H 2


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    D44H1 D45H1 D44H2 D45H2 D44H4 D45H4 D44H5 D45H5 D44H7 D45H7 ge d44h11 D44* general electric npn to-220 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8 PDF

    LP319

    Abstract: IC 74LS00
    Text: I IP 11Q IP7Q 11 LOW POW ER QUAD D IFFER EN TIA L C OM PARATORS 030 44 , OCTOBER 1987-REVISED MAY 1988 • Ultralow Power Supply Current Drain . . . Typically 6 0 /»A • Low Input Biasing Current . . . 3 nA D, J, OR N PACKAGE (TOP VIEW • Low Input Offset Current . . . ± 0 .5 nA


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    1987-REVISED LM239, LM339, LM2901 LP319 IC 74LS00 PDF

    BD934

    Abstract: B0937 B0941 BD937 B0939 BD941 BD934 philips BD933 IEC134 c 939
    Text: BD933; 935 BD937;- 939 BD941 PHILIPS INTERNATIONAL SbE D • 7 1 1 0 fiEb 0 0 4 3 D 44 41b IPHIN SILICON EPITAXIAL BASE POWER TRANSISTORS T-Z3~0*=i N-P-N silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur.


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    BD933; BD937 BD941 7110fl2b 0043D44 BD934; BD933 T-33-09 BD937; BD934 B0937 B0941 B0939 BD941 BD934 philips IEC134 c 939 PDF

    VTT0942

    Abstract: VTT0943 VTT0944
    Text: 5bE 3G30b0T D □□□1177 .040" NPN Phototransistors Low Cost Hermetic TO-18 Flat Window Pkg E 751 • VCT V T T 0 9 4 2 , 43, 44 T —41—61 G & G VACTEC PACKAGE DIMENSIONS inch mm ■2 0 6 ( 5 .2 5 ) .5 0 ( 12 .7 ) (0 51) CASE 53 PRODUCT DESCRIPTION


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    3G30b VTT0942, T-41-61 VTT0942 VTT0943 VTT0944 PDF

    2SD1322

    Abstract: 010of
    Text: Power Transistors ^ 3 2 0 5 2 0 0 1 L7 0 0 2 SD1322 b 44 2S D 1322 Package D im ensions S ilicon NPN Triple-D iffused Planar Darlington Type M edium Speed Power S w itching • Features • 3 0 V Z e n e r d io d e b u ilt-in b e t w e e n C a n d B • V e r y s m a ll f lu c t u a t io n in b r e a k d o w n v o l t a g e s


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    001L700 2SD1322 001b701 2SD1322 010of PDF

    VTT0942

    Abstract: VTT0943 VTT0944
    Text: 5 bE 3G30b0T D GGD1177 .040" NPN Phototransistors Low Cost Hermetic TO-18 Flat Window Pkg 7B1 • VCT V TT 0 9 4 2 , 43, 44 T—41—61 E G & G VACTEC PACKAGE DIMENSIONS inch mm .5 0 ( 1 2 . 7 ) ■206 ( 5 .2 3 ) ’ .1 7 8 ( 4 . 5 2 ) 2 0 5 ( S .2 1 ) CASE 53


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    3G30b0T GGD1177 VTT0942, 100/iA 50/1A VTT0942 VTT0943 VTT0944 PDF

    2SD1322

    Abstract: No abstract text available
    Text: P o w e r T ra n s is to rs b T B2 f l 5 2 2SD1322 Q01b700 2SD1322 fc>44 Package Dimensions Silicon NPN Triple-Diffused Planar Darlington Type Medium Speed Power Switching • Features • 3 0V Z e n e r d io d e built-in b e tw e e n C and B • V e r y sm a ll flu c tu a tio n in b r e a k d o w n v o lt a g e s


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    bTB2fl52 Q01b700 2SD1322 01b701 PDF

    buw46

    Abstract: BUW45 buw44
    Text: 7^2^53? DoaaaMa T • ¡¡fi S C S -T H O M S O N S G S- THOMSON T 3 3-iS BUW 44/B U W 45 BUW46 3QE D HIGH VOLTAGE, HIGH CURRENT POWER SWITCH DESCRIPTION The BUW44, BUW45 and BUW46 are multiepitaxial mesa NPN transistors in Jedec TO-3 metal case intended in fast switching applications for high


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    BUW46 BUW44, BUW45 BUW46 45/BU 44/BUW 45/BUW buw44 PDF

    Untitled

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD/ CHPNTS t.lE D WM 4447534 1 44 577 □DD‘Ö Surface Mount, Low Current Silicon Bipolar Transistor Technical Data AT-60111 AT-60211 Features • Low C u rrent O peration AT-60111: 0.4 mA at 3 V AT-60211: 0.8 mA at 3 V • Low Noise Figure


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    AT-60111 AT-60211 AT-60111: AT-60211: OT-143 PDF

    44E SOT-23

    Abstract: SOT-23 MARKING 1DP 1dp sot-23 SOT-23 MARKING 1GP code 1gp BC846 marking 1Gp BC846B BC847 BC847B
    Text: •I b bS 3 lì31 GQ24M53 *44^ HIAPX N AUER PHILIPS/DISCRETE B C 846 BC847 BC848 fc.7E 1> 7 V. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SOT-23 package. QUICK REFERENCE D A T A Collector-emitter voltage {V g g = 0


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    GQ24453 BC846 BC847 BC848 OT-23 BC846 BC847 35MHz 44E SOT-23 SOT-23 MARKING 1DP 1dp sot-23 SOT-23 MARKING 1GP code 1gp marking 1Gp BC846B BC847B PDF

    RC723DP

    Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
    Text: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525


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    /2525A /3525A /2527A /3527A 523/3523A RC723DP SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK PDF

    Untitled

    Abstract: No abstract text available
    Text: M ay 1997 MgLMicro Linear ML65T244 3.3V High Speed Dual Quad Buffer/Line Driver GEN ERAL D ESCRIPTION FEATURES The M L65 T2 44 is a non-inverting dual quad buffer/line driver. The high operating frequency 6 6 M H z driving a 50pF load and low propagation delay (2ns) make it ideal


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    ML65T244 PDF