LM317T
Abstract: lm317* marking code LM317T applications LM317 regulator BLOCK DIAGRAM LM317T ST lm317 Transistor LM317t LM317t circuit lm317t st marking code LM317T CURRENT CIRCUIT
Text: Revised June 2005 LM317 3-Terminal Positive Adjustable Regulator General Description Features This monolithic integrated circuit is an adjustable 3-terminal positive voltage regulator designed to supply more than 1.5A of load current with an output voltage adjustable over
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LM317
O-220
LM317T
LM317D2TXM
O-22irchild
lm317* marking code
LM317T applications
LM317 regulator BLOCK DIAGRAM
LM317T ST
Transistor LM317t
LM317t circuit
lm317t st marking code
LM317T CURRENT CIRCUIT
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Untitled
Abstract: No abstract text available
Text: I2P AK BUK9E1R9-40E N-channel 40 V, 1.9 mΩ logic level MOSFET in I²PAK 5 June 2013 Product data sheet 1. General description 2 Logic level N-channel MOSFET in a I PAK package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK9E1R9-40E
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B80NF55-06
Abstract: No abstract text available
Text: STB80NF55-06T N-channel 55 V, 5 mΩ, 80 A STripFET II Power MOSFET in a D²PAK package Features Order code VDSS RDS on max. ID STB80NF55-06T 55 V < 6.5 mΩ 80A TAB • Exceptional dv/dt capability Applications ■ Switching application ■ Automotive 3
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STB80NF55-06T
B80NF55-06
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Untitled
Abstract: No abstract text available
Text: STPS8H100 High voltage power Schottky rectifier Datasheet - production data Description Schottky barrier rectifier designed for high frequency compact switched mode power supplies such as adaptators and on board DC/DC converters. K A NC D2PAK STPS8H100G Table 1. Device summary
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STPS8H100
STPS8H100G
O-220AC
STPS8H100D
O-220FPAC
STPS8H100FP
DocID5387
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ISD25
Abstract: STB18NF30
Text: STB18NF30 N-channel 330 V, 18 A STripFET II Power MOSFET in D²PAK package Preliminary data Features Order code VDSS RDS on max. ID STB18NF30 330 V 180 mΩ 18 A TAB • 100% avalanche tested ■ 175 °C junction temperature 3 1 Applications ■ D²PAK
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STB18NF30
ISD25
STB18NF30
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MX25L6406EM2I-12G TR
Abstract: No abstract text available
Text: T2550-12T, T2550-12G 1200 V 25 A Snubberless Triac Datasheet − production data Description A2 Its 1200 V blocking voltage enables use in 3-phase industrial application. Its noise immunity and dynamic commutation makes it suitable for either for inductive, capacitive or resistive load
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T2550-12T,
T2550-12G
T2550-12
O-220AB.
O-220AB
T2550-12T)
T2550-12T
T2550-12G)
MX25L6406EM2I-12G TR
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B230NH03L
Abstract: 3M Philippines
Text: STB230NH03L N-channel 30 V, 2.3 mΩ, 80 A D²PAK STripFET Power MOSFET Features Order code VDSS RDS on ID STB230NH03L 30V < 3mΩ 80A(1) TAB 1. This value is limited by package • RDS(on) Qg industry’s benchmark ■ Conduction losses reduced ■ Switching losses reduced
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STB230NH03L
B230NH03L
3M Philippines
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Untitled
Abstract: No abstract text available
Text: STPS20SM60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS20SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode
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STPS20SM60C
STPS20SM60C
O-220AB,
O-220FPAB,
O-220AB
STPS20SM60CT
O-220FPAB
STPS20SM60CFP
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STPS20
Abstract: No abstract text available
Text: STPS20SM60C Power Schottky rectifier Features • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A1 K A2 K K A2 A2 Description A1 The STPS20SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode
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STPS20SM60C
STPS20SM60C
O-220AB,
O-220FPAB,
STPS20SM60CG-TR
STPS20SM60CR
O-220AB
STPS20SM60CT
O-220FPAB
STPS20SM60CFP
STPS20
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STB18NF30
Abstract: No abstract text available
Text: STB18NF30 N-channel 330 V, 160 mΩ, 18 A STripFET II Power MOSFET in D²PAK package Datasheet — production data Features Order code VDSS RDS on max. ID STB18NF30 330 V 180 mΩ 18 A • 100% avalanche tested ■ 175 °C junction temperature TAB 3 1 Applications
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STB18NF30
STB18NF30
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Untitled
Abstract: No abstract text available
Text: STB150N3LH6 N-channel 30 V, 2.4 mΩ typ., 80 A, STripFET VI DeepGATE™ Power MOSFET in D²PAK package Datasheet — production data Features Order code VDSS RDS on max ID(1) PTOT STB150N3LH6 30 V 3.0 mΩ 80 A 110 W 1. Current limited by package. •
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STB150N3LH6
STB150N3LH6
150N3LH6
STB150N3LHin
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PS20M100SG
Abstract: No abstract text available
Text: STPS20M100S Power Schottky rectifier Features A 1 K(2) • High current capability ■ Avalanche rated ■ Low forward voltage drop current ■ High frequency operation ■ A(3) K A A Insulated package: – Insulation voltage 2000 V rms – Package capacitance = 12 pF
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STPS20M100S
STPS20M100SR
O-220AB
STPS20M100ST
O-220AB,
O-220FPAB,
PS20M100SG
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STPS20M100ST
Abstract: STPS20M100S PS20M100SR 624 Marking Code AN1768 AN2025
Text: STPS20M100S Power Schottky rectifier Features A 1 • High current capability A(3) ■ Avalanche rated ■ Low forward voltage drop current ■ High frequency operation ■ K(2) K A A Insulated package: – Insulation voltage 2000 V rms – Package capacitance = 12 pF
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STPS20M100S
STPS20M100SR
O-220AB
STPS20M100ST
O-220AB,
O-220FPAB,
STPS20M100ST
STPS20M100S
PS20M100SR
624 Marking Code
AN1768
AN2025
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STPS15SM80CFP
Abstract: No abstract text available
Text: STPS15SM80C Power Schottky rectifier Features A1 K • High junction temperature capability ■ Optimized trade-off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated package TO-220FPAB
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STPS15SM80C
O-220FPAB
STPS15SM80CG-TR
STPS15SM80CR
O-220AB,
O220FPAB,
STPS15SM80CFP
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C5075
Abstract: STPS10M80CFP
Text: STPS10M80C Power Schottky rectifier Features A1 K • High junction temperature capability ■ Optimized trade-off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated package TO-220FPAB
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STPS10M80C
O-220FPAB
STPS10M80CG-TR
STPS10M80CR
O-220AB,
O220FPAB,
C5075
STPS10M80CFP
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STPS10SM80CFP
Abstract: No abstract text available
Text: STPS10SM80C Power Schottky rectifier Features A1 K • High junction temperature capability ■ Optimized trade-off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated package TO-220FPAB
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STPS10SM80C
O-220FPAB
STPS10SM80CG-TR
STPS10SM80CR
O-220AB,
O220FPAB,
STPS10SM80CFP
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STGW19NC60HD
Abstract: No abstract text available
Text: STGB19NC60HDT4, STGF19NC60HD STGP19NC60HD, STGW19NC60HD 19 A, 600 V, very fast IGBT with Ultrafast diode Features TAB TAB • Low on-voltage drop VCE(sat ■ Very soft Ultrafast recovery anti-parallel diode 3 3 1 Applications D²PAK ■ High frequency motor drives
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STGB19NC60HDT4,
STGF19NC60HD
STGP19NC60HD,
STGW19NC60HD
O-220
O-247
O-220FP
STGW19NC60HD
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STPS20SM80C
Abstract: STPS20SM80CFP
Text: STPS20SM80C Power Schottky rectifier Features A1 K • High junction temperature capability ■ Optimized trade-off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated package TO-220FPAB
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STPS20SM80C
O-220FPAB
STPS20SM80CG-TR
STPS20SM80CR
O-220AB,
O220FPAB,
STPS20SM80C
STPS20SM80CFP
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STMicroelectronics marking code
Abstract: STPS20M80CFP
Text: STPS20M80C Power Schottky rectifier Features A1 K • High junction temperature capability ■ Optimized trade-off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated package TO-220FPAB
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STPS20M80C
O-220FPAB
STPS20M80CG-TR
STPS20M80CR
O-220AB,
O220FPAB,
STMicroelectronics marking code
STPS20M80CFP
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Untitled
Abstract: No abstract text available
Text: STB230NH03L N-channel 30 V, 2.3 mΩ, 80 A D²PAK STripFET Power MOSFET Features Order code VDSS RDS on ID STB230NH03L 30V < 3mΩ 80A(1) ) s ( ct TAB 1. This value is limited by package • RDS(on) Qg industry’s benchmark ■ Conduction losses reduced
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STB230NH03L
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Untitled
Abstract: No abstract text available
Text: STH360N4F6-2 N-channel 40 V, 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-2 package Datasheet − preliminary data Features Order code VDSS RDS on max ID STH360N4F6-2 40 V < 1.25 mΩ 180 A(1) TAB 1. Current limited by package • 2 Low gate charge
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STH360N4F6-2
STH360N4F6-2
360N4F6
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10428
Abstract: STB45NF06 mosfet DPAK
Text: STB45NF06 N-channel 60 V, 0.22 Ω typ., 38 A STripFET II Power MOSFET in a D2PAK package Datasheet — production data Features Order code STB45NF06T4 • VDS RDS on max ID 60 V 0.028 Ω 38 A TAB Typical RDS(on) = 0.022 Ω ■ Exceptional dv/dt capability
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STB45NF06
STB45NF06T4
10428
STB45NF06
mosfet DPAK
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STPS30SM80CFP
Abstract: PS30SM80CFP PS30SM80CT
Text: STPS30SM80C Power Schottky rectifier Features A1 K • High junction temperature capability ■ Optimized trade-off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated package TO-220FPAB
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STPS30SM80C
O-220FPAB
STPS30SM80CG-TR
STPS30SM80CR
O-220AB,
O220FPAB,
STPS30SM80CFP
PS30SM80CFP
PS30SM80CT
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Hitachi "J suffix"
Abstract: 2SC2618RC
Text: Shipping Container Specifications Shipping Container Form and Quantity Table 1 shows the availability of shipping container for the small signal transistors. Table 1 Package type Shipping container form TO-92 Radial taping Reel 2000 pcs TO-92MOD Radial taping
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O-92MOD
Hitachi "J suffix"
2SC2618RC
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