UL1385
Abstract: D243 D244 D245 IRKL1
Text: MÛ5SMS2 D01b71ô International IS Rectifier SERIES IRK.L131/132 NEW INT-A-pak Power Modules FAST RECOVERY DIODES INTERNATIONAL T17 • INR RECTIFIER bS E Features I Fast recovery time characteristics I Electrically isolated base plate Industrial standard package
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554S2
D01b71Ã
l131/132
L131/132
UL1385
D243
D244
D245
IRKL1
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2SA1635
Abstract: 2SC4008 SC-75A
Text: 2SA1635 2SC4008 Transistors Power Transistor —80V, —4A I 2SA1635 •F e a tu re s #A bsolute maximum ratings ( T a = 2 5 t ) 1 ) Low VcE(sai). (Typ. — 0 . 3 V at Ic / I b = — 2 /—0.2A) 2 ) Excellent DC current gain characteristics. 3 ) Pc = 3 0 W ( T c = 2 5 ‘C )
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2SA1635
2SC4008
2SA1635
2SC4008.
O-220FP
O-220
O-126
O-220,
SC-75A
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2SD1034
Abstract: 2SD1634 panasonic 2SD
Text: Power Transistors 2SD 1Ó 34 2SD1634 Silicon PNP Triple-Diffused Planar Darlington Type Package D im ensions Power S w itching U nit ! mm • Features 4 .4m ax. 10.2m ax. • High sp eed sw itching 2.9 m a \ • G ood linearity of DC current gain hFE • “Full P ack” package for simplified m ounting on a heat sink with one
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2SD1034
2SD1634
2SD1034
2SD1634
panasonic 2SD
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A13G
Abstract: CXK5T81000ATN CXK5T81000AYN 5 pin A13E power supply circuit 24v ac to 3.6v dc mcoe
Text: SONY | CXK5T81OOOATN/AYN - 1 0 L L X / 1 2 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATN/AYN is a high Preliminary speed CMOS static RAM organized as 131072-words by 8 -bits. Special feature are low power consumption and
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CXK5T81OOOATN/AYN
131072-word
CXK5T81
131072-words
-10LLX
-12LLX
-10LLX
100ns
A13G
CXK5T81000ATN
CXK5T81000AYN
5 pin A13E
power supply circuit 24v ac to 3.6v dc
mcoe
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2SD1325
Abstract: No abstract text available
Text: Power Transistors 2SD1325 2SD 1325 Package D im ensions Unit ! mm 4.4m ax. 10.2m ax. Silicon NPN Triple-D iffused Planar Darlington Type 2 9max M edium Speed Pow er S w itching • Features 0 3 .1 + 0.1 • 6 0 V Z e n e r d iod e built-in b e tw e e n C and B
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2SD1325
b132fiS5
D01b707
2SD1325
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BC648B
Abstract: No abstract text available
Text: Transistors BC847B NPN General Purpose Transistor I BC847B •Feature« •E x te rn a l dimensions Units : mm 1 > BVceo<45V (lc=1m A ) 2 ) Complements the BC857B. BC847B •P a c k a g e , marking, and packaging specifications Type BC847B Package Marking
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BC847B
BC857B.
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
BC648B
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Untitled
Abstract: No abstract text available
Text: DTA144VU A / D TA144VKA / D TA144VSA Transistors D TC 144V U A / D TC 144V K A / D TC 144V SA Digital transistor built-in resistors DTA144VUA / DTA144VKA / DTA144VSA I •Features •A bsolu te maximum ratings (T a = 2 5 t:) 1 ) Built-in bias resistors enable the configuration of an inverter
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DTA144VU
TA144VKA
TA144VSA
DTA144VUA
DTA144VKA
DTA144VSA
0Dlb713
O-220FN
O-220FN
O220FP
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Untitled
Abstract: No abstract text available
Text: 2SA1900 2SC5053 Transistors Medium Power Transistor —50V, —1A 2SA1900 I • Features 1) ^Absolute maximum ratings (Ta—2 5 t ) L o w VcEfsat). (T y p .— 0 .1 5 V a t Ic/I b = — 5 0 0 /— 5 0 m A ) 2 ) Pc = 2W Parameter Collector-base voltage C otiector-emitter voltage
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2SA1900
2SC5053
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
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Untitled
Abstract: No abstract text available
Text: Transistors Digital transistors built-in resistors DTD123EK/ DTD123ES •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Built-in bias resistors enable the configuration of an inverter circuit 2 .9 ± 0 .2 DTD123EK + 1 1 0-2 1 .9 ± 0 .2 without connecting external input
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DTD123EK/
DTD123ES
DTD123EK
SC-59
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
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transistor PC 406 HM
Abstract: No abstract text available
Text: Transistors Digital transistors built-in resistors DTC143EE /DTC143EUA /DTC143EKA DTC143ESA •F e a tu re s 1) B uilt-in bias resistors enable the configuration of an inverter circuit w ithout connecting external input resistors (see the e quivalent cir
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DTC143EE
/DTC143EUA
/DTC143EKA
DTC143ESA
DTC143EE
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
transistor PC 406 HM
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Untitled
Abstract: No abstract text available
Text: Transistors Digital transistors built-in resistors DTC123YE/ DTC123YUA/ DTC123YKA DTC123YSA •F e a tu re s 1) ►External d im e n s io n s (U nits: m m ) B u ilt- in b ia s r e s is to r s e n a b le th e c o n fig u ra tio n o f an in v e rte r c irc u it
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DTC123YE
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
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Untitled
Abstract: No abstract text available
Text: DTA115GUA / DTA115GKA DTC115GUA / DTC115GKA Transistors Digital transistors built-in resistors I DTA115GUA / DTA115GKA •Features •A bsolu te maximum ratings (Ta=25^C) 1 ) The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and
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DTA115GUA
DTA115GKA
DTC115GUA
DTC115GKA
0Dlb713
O-220FN
O-220FN
O220FP
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Untitled
Abstract: No abstract text available
Text: 2SC4137 2SC4774 / 2SC4713K Transistors High-gain Amplifier Transìstor I 2SC4137 •P e a tu re e 1 Low VcE Mt). (Typ. - 0 .2 V at lc/lB=50/5mA) 2 ) High DC current gain. •P a c k a g in g specifications and •A b s o lu te maximum ratings ( T a * 2 5 t )
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2SC4137
2SC4774
2SC4713K
50/5mA)
0Dlb713
O-220FN
O-220FN
O220FP
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Untitled
Abstract: No abstract text available
Text: Transistors Low-frequency Transistor 20V, 3A 2SD2150/2SC4115S/2SD2264 •F e a tu re s 1 ) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW V cE(sat). VcE(sat) = 0.2V (Typ.) (Ic / I 2) b = 2 A /0 .1 A ) E x c e lle n t c u rre n t g a in c h a ra c te ris
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2SD2150/2SC4115S/2SD2264
96-237-C74)
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
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TRANSISTOR D405
Abstract: No abstract text available
Text: 2SD2170 2SC4574 Transistors Medium Power Transistor Motor or Relay drive I 2SD 2170 •A b s o lu te maximum ratings (Ta=25"C ) •F e a tu re s 1 2 3 4 5 6 ) ) ) ) ) ) Built-in zener diode between collector and base. Z ener diode has low dispersion. Strong protection against reverse pow er surges due to low loads.
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2SD2170
2SC4574
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
TRANSISTOR D405
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Untitled
Abstract: No abstract text available
Text: Transistors Medium Power Transistor 32V, 0.5A 2SC2411K/2SC4097/2SC1741S •F e a tu re s 1 ) H ig h ►External d im e n s io n s (U nits: m m ) IcMax. 2SC2411K IcMax. = 0 .5 m A 2) L o w VcE(sat). O p tim a l f o r lo w v o lt a g e o p e ra tio n .
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2411K
4097/2S
1741S
2SC2411K
2SC4097
I09503
0Dlb713
O-220FN
O-220FN
O220FP
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Untitled
Abstract: No abstract text available
Text: Transistors Low V c e s a t Transistor (-20V, -3A ) I 2SB1424 / 2SA1585S •E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(aat). 2SB1424 VcE(sat) = -0 .2 V (Typ.) 2SA1585S (Ic/ I b = - 2 A / - 0 . 1 A ) 2) Excellent DC curre nt gain charac
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2SB1424
2SA1585S
2SB1424
2SD2150
2SC4115S.
SC-62
SC-72
0Dlb713
-220FN
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Untitled
Abstract: No abstract text available
Text: Transistors Digital transistors built-in resistors DTC363EU / DTC363EK / DTC363ES • F e a tu re s • E x te rn a l dim ensions (Units: mm) In a d d itio n to th e fe a tu re s o f re g u la r digital transistors, DTC363EU 2.0± 0.2 0 .9 ± 0 .1 13±0 1
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DTC363EU
DTC363EK
DTC363ES
DTC363EU
600mA)
SC-70
DTC363EK
0Dlb713
O-220FN
O-220FN
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Untitled
Abstract: No abstract text available
Text: Transistors Digital transistors built-in resistors DTA123JE/DTA123JUA/DTA123JKA/DTA123JSA •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) B u ilt- in b ia s r e s is to r s e n a b le th e c o n fig u ra tio n o f an in v e rte r c irc u it
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123JK
123JS
DTA123JE
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
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Untitled
Abstract: No abstract text available
Text: SUPERSEDED BY MT58LC32K32/36C5 MT58LC32K32/36C4 32K X 32/36 SYNCBURST SRAM |U |IC R O N 32K x 32/36 SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • Fast access times: 4.5,5,6,7 and 8ns
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MT58LC32K32/36C5
MT58LC32K32/36C4
160-PIN
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Untitled
Abstract: No abstract text available
Text: Transistors Digital transistors built-in resistors DTC123JE / DTC123JUA / DTC123JKA DTC123JSA •F e a tu re s 1) B u ilt- in b ia s r e s is to r s e n a b le th e c o n fig u ra tio n o f an in v e rte r c irc u it w ith o u t c o n n e c tin g e x te rn a l in p u t
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DTC123JE
DTC123JUA
DTC123JKA
DTC123JSA
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
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AE015
Abstract: No abstract text available
Text: Transistors Digital transistors built-in resistors DTA123EE/DTA123EU A/DTA123EKA/DTA123ESA •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) B u ilt- in b ia s r e s is to r s e n a b le th e c o n fig u ra tio n o f a n in v e rte r c irc u it
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DTA123EE/DTA123EU
/DTA123EKA/DTA123ESA
DTA123EE
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
AE015
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Untitled
Abstract: No abstract text available
Text: Transistors Low Frequency Transistor -32V, - 0.8A 2SB1197K •F e a t u r e s 1) •E x te rn a l dim ensions (Units: mm) LOW VcE(sat). VcE(sat) = —0 .5 V (Ic / I b = - 0 . 5 A / - 5 0 m A ) 2) Ic = - 0 . 8 A . 3) C om plem ents the 2 S D 1 7 8 1 K. 0 8 ± 0.1
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2SB1197K
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
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Untitled
Abstract: No abstract text available
Text: Transistors General Purpose Transistor Isolated Dual Transistors IMZ4 • F e a tu re s 1) B o th • E x te rn a l dim en sio n s (U n its: mm) 2SA 1036K c h ip an d 2 S C 4 1 1K ch ip in a SM T p ackag e. 2.9±0.2 1.9±0.2 2 ) M ounting p o ssib le w ith SM T3 au
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1036K
SC-74
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
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