lexan 940
Abstract: C2800-701 A04A BAR 63 lexan 500 mechanical thermal engineering database Pentium D 940 D08A zytel NYLON SHARP I A05
Text: Mechanical Support Components for S.E.C. Cartridge Processors July 1997 Order Number: 243429-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except
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IA35
Abstract: CDM62256
Text: HA RR IS S E M I C O N D S E C T O R m 3 7 ^ ] M 3 0 5 27 1 D02b2S3 T BiHAS High-Reliability CMOS LSI — CDM 62256C/3 Advance Information - Wl High-Reliability CMOS 32,768-Word By 8-Bit LSI Static RAM
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D02b2S3
62256C/3
768-Word
28-pin
ns/120
W0336R
CDM62256C/3
28-lead
CDM62256CD/3
F--02
IA35
CDM62256
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC 3QE 0 b 427525 D02b2flb 7 • jjPD7832x Advanced 8/16-Bit, Real Time Control Microcomputer With A/D Converter NEC NEC Electronics Inc. ■ _ T - f r i - n - we Description TTie juPD7832x 78320,78322 is a single-chip microcom
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D02b2flb
jjPD7832x
8/16-Bit,
juPD7832x
16-bit
003CH)
003DH)
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE L IE bbS3^31 D02b230 ‘IbM D APX BAS45L A LOW LEAKAGE DIODE FOR SURFACE MOUNTING The B A S 4 5 L is a switching diode with a very low reverse current. This S M diode is a leadless diode in a hermetically sealed SO D -8 0 envelope with lead/tin-plated metal
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D02b230
BAS45L
bb53T31
Q02b232
bb53131
Q0Eb233
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Untitled
Abstract: No abstract text available
Text: HARRIS S E MI C O N D SECTOR 37E J> m - 4302271 D02b24b 5 HHAS High-Reliabilily CMOS LSI Devices CDM6264BC/3 Advance Information Hlgh-Rellability CMOS 8192-Word By 8-Blt LSI Static RAM
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D02b24b
CDM6264BC/3
8192-Word
28-pln
28-lead
92CS-40J94
32-term
CDM6264BCD/3
CDM6284BCJ/3
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BU506D
Abstract: BU506 EB251
Text: I I N AMER PHILIPS/DISCRETE b TE D • bbSBTBl D02B251 A 473 * A P X BU506 BU506D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits o f colour television receivers and fo r line operated switch-mode applications.
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EB251
BU506
BU506D
BU506D
BU506D)
002025b
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Untitled
Abstract: No abstract text available
Text: B U R R -B R O W N [ OPA26Q4 1 Dual FET-lnput, Low Distortion OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • LOW DISTORTION: 0.0003% at 1kHz LOW NOISE: 10nVWRz HIGH SLEW RATE: 25V/|IS WIDE GAIN-BANDWIDTH: 20MHz
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OPA26Q4
10nVWRz
20MHz
DPA2604
313fc
OPA2604
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Untitled
Abstract: No abstract text available
Text: H M 5 1 4 1 O O C /C L S e r i e s Preliminary 4,194,304-word x 1-bit Dynamic Random Access Memory HITACHI T he H ita c h i H M 514100C is a CM OS dynam ic R A M o rg a n iz e d 4 ,1 9 4 ,3 0 4 w o rds x 1 b its . HM 514100C has realized higher density, higher
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304-word
514100C
300-m
20-pin
44TbEG3
HM514100C/CL
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MICROCOMPUTERS M 37702M 4LXXXGP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION • W id e op erating te m p e ra tu re ra n g e . — 4 0 ~ 8 5 ‘C m icro • In te rru p ts . •.
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37702M
16-BIT
20/25ns
25mVrms,
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Untitled
Abstract: No abstract text available
Text: Philips S em iconductors • b b S B IB l DQ EbS7T 77A M APX Prelim inary specification BAT81/82/83 Schottky barrier diodes N AH ER P H I L I P S / D I S C R E T E DESCRIPTION General purpose and switching Schottky barrier diodes in a SOD68 envelope, with an integrated
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BAT81/82/83
BAT81
BAT82
BAT83
bb53831
D02b2fl2
bb53T31
DO-34)
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SE050A
Abstract: No abstract text available
Text: AT&T Preliminary Data Sheet SE050A Power Module; 48 Vdc Input, 5 Vdc Output, 50 W Features • Small size: 2.30 in. x 3.35 in. x 0.75 in. ■ Output current limiting; unlimited duration ■ Output overvoltage clamp: V0 < 7 V ■ Complete input and output filtering
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SE050A
10--J
10--H
00S002b
D02b2
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BFS21
Abstract: BFS21A SOT52 PHILIPS 1980
Text: Il PHILIPS INTERNATIONAL 41E D • . 7110fl2Li Q05bE3cl ô HiPHIN MATCHED N-CHANNEL FETS Matched pair o f symmetrical n-channei silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes, mounted together in a metal S-clip.
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711002b
BFS21
BFS21A
500MA
500/iA
BFS21A
SOT52
PHILIPS 1980
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55257CPI/CF1/CSPI/CFT1/CTRI-85/10 PRELIMINARY SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM Description The TC55257CPI is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of
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TC55257CPI/CF1/CSPI/CFT1/CTRI-85/10
TC55257CPI
cn724fl
002b520
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creative sound blaster 5.1 circuit diagram
Abstract: 24C02 w6 OPL2 RWA032
Text: 41^ R o c k w e l l S em iconductor S ystem s WaveArtist 100, WaveArtist™ 200, and WaveArtist™ 300 Audio System Devices _ Introduction Features The Rockwell WaveArtist™ 100 RWA100 , WaveArtist™ 200 (RWA200) and WaveArtist™ 300 (RWA300) are
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RWA100)
RWA200)
RWA300)
208/212-pin
16-bit
MD151
7611Q73
creative sound blaster 5.1 circuit diagram
24C02 w6
OPL2
RWA032
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S1RB
Abstract: Philips MARKING CODE a91
Text: D bbS3T31 □□Eb2DE TTT H A P X BAS17 N AMER PHIL IPS/DISCRETE_ J V LOW VOLTAGE STABISTOR Silicon planar epitaxial diode in SOT-23 envelope. This diode is intended fo r low voltage stabilizing e.g. bias stabilizer in class-B ou tput stages, clipping, clamping and meter protection.
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bbS3T31
BAS17
OT-23
D02b20M
S1RB
Philips MARKING CODE a91
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HM514100
Abstract: HM514100BS
Text: HM5141OOB/BL Series 4,1 9 4 ,3 0 4 -w o rd x 1-b it D y n a m ic R a nd o m A c c e s s M em ory The Hitachi HM514100B is a CMOS dynamic RAM o rganized 4 ,1 9 4 ,3 0 4 w ords x 1 bits. HM514100B has realized higher density, higher performance and various functions by employing
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HM5141OOB/BL
HM514100B
514100B
300-mil
20-pin
400mil
HM514100
HM514100BS
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Untitled
Abstract: No abstract text available
Text: K S 5 7C 2016 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2016 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit CPU core. With an up-to-20-digit LCD direct drive capability and up to 40 pins for LCD segment data
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KS57C2016
up-to-20-digit
16-bit
100-pin
002b3b4
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'iE D • bbSBTBl D0Eb2Eb 433 BAS45 LOW LEAKAGE DIODE Switching diode with a very low reverse current, encapsulated in a subminiature glass DO-34 envelope. QUICK REFERENCE DATA Continuous reverse voltage vR max. 125 V Forward voltage
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BAS45
DO-34)
DO-34
OD-68)
bbS3T31
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cfl circuit diagram
Abstract: TC55257CFL TC55257CFTL TC55257CPL TC55257CSPL TC55257CTRL
Text: TOSHIBA TC55257CPL/CFI/CSPL/CFIiycrRL-70/85/10 PRELIMINARY SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM Description The T C 5 5 2 5 7 C P L is a 2 6 2 ,1 4 4 bit C M O S static random access m em ory organized as 3 2 ,7 6 8 w o rd s by 8 bits and operated from
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TC55257CPiyCFL/CSPL/CFnyCTRLr70/85/10
TC55257CPL
002b205
TC55257CPL/CFL/CSPL/CFTL/CTRL-70/85/10
T0CI7240
D02bSDb
cfl circuit diagram
TC55257CFL
TC55257CFTL
TC55257CSPL
TC55257CTRL
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs DRAM MODULE MH25632XJ-7.-8/ MH25632SXJ-7,-8 FAST PAGE MODE 83886Û8-BIT(262144-W0RD BY 32-BIT)DYNAMIC RAM DESCRIPTION WH25632XJ/SXJ is 2 6 2 14 4 -word by 3 2 -b it dynamic RAM module. This consists o f tw o industry standard 256K x 16bit
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MH25632XJ-7
MH25632SXJ-7
262144-W0RD
32-BIT
WH25632XJ/SXJ
16bit
MH25632XJ
MH25632XJ
MH25632SXJ
8388608-BIT
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI ICs LSI M64403FP p fV E V -V som P ERROR CORRECTION WITH VARIABLE LENGTH AND DISTANCE DESCRIPTION A P P L IC A T IO N The M 64403FP perform s the decoding fo r RS (Reed Solomon) DVD player, DVD-ROM (D V D :D igital V ideo Disc), DBS (Direct cod e w hich prim itive p o ly n o m ia l^ (X)=Xa+X*+X3+Xz+1 and its
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M64403FP
64403FP
16777216-BIT
4194304-WORD
00SS47L.
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Untitled
Abstract: No abstract text available
Text: S i GE C P L E S S E Y ADVANCE INFORMATION S E M I C O N D U C T O R S MV1471 HDB3/AMI ENCODER/DECODER The MV1471, along with other devices in the GPS 2Mbit PCM signalling series comprise a group of circuits which will perform the common channel signalling and error detection
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MV1471
MV1471,
048Mbit
MV1471
10MHz.
37bfl5BE
37bA522
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30N5F
Abstract: No abstract text available
Text: MITSUBISHI LSIs DRAM MODULE MH1 M09B0AJ-7,-8/ MH1 M09B0AJA-7,-8 FAST PAGE MODE 9437184-BIT(1048576-WORD BY 9-BIT)DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) (Single side] The M H 1M 09B 0A J/JA is 1 0 4 8 5 7 6 -word x 9 - bit dynamic RAM. This consists of tw o industry standard 1M x 4 dynamic
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M09B0AJ-7
M09B0AJA-7
9437184-BIT
1048576-WORD
1Q48576-WORD
MH1M09B0AJ
MH1M09B0AJA
MH1M09B0CJ
9437184-BIT
30N5F
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timer circuit diagram
Abstract: KS57C0208
Text: KS57C0208 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C0208 single-chip CMOS microcontroller is for high performance using Samsung's newest 4-bit CPU core. With two 8-bit timer/counters, a watchdog timer, and sixteen n-channel open-drain I/O pins, the KS57C0208
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KS57C0208
KS57C0208
24-pin
7Tb4142
71L4142
timer circuit diagram
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