Untitled
Abstract: No abstract text available
Text: DECchip 21171 Core Logic Chipset Technical Reference Manual Order Number: EC-QE18A-TE Revision/Update Information: Digital Equipment Corporation Maynard, Massachusetts aam i3t. 0 0 3 3 7 3 3 0 22 Preliminary—Subject to Change Ju ne 1995 W hile D igital believes th e inform ation in th is publication is correct as of th e d ate of publication,
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EC-QE18A-TE
HF3-15A
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Untitled
Abstract: No abstract text available
Text: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ ■ CMOS Low power consumption Flasherase Electrical Bulk Chip-Erase
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Am28F256
32-Pin
0257S2Ã
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Untitled
Abstract: No abstract text available
Text: Data Sheet July 1998 microelectronics group Lucent Technologies Bell Labs Innovations NetLight 1417J4A 1300 nm Laser Gigabit Transceiver Transmitter disable input Wide dynamic range receiver with InGaAs PIN photodetector TTL signal-detect output Low power dissipation
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1417J4A
RJ-45
1000Base-LX
Fibr009.
1417J4A
005002b
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42s4260
Abstract: No abstract text available
Text: N E C ELECTRONICS INC blE D N EC NEC Electronics Inc. • b427525 0033037 053 « N E C E #iPD424260A/L, 42S4260A/L 262,144 X 16-Bit Dynamic CMOS RAM 17 Description The /JPD424260A/L and /JPD42S4260A/L are fast-page dynam ic RAMs organized as 262,144 words by 16 bits
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b427525
uPD424260A/L
uPD42S4260A/L
16-Bit
/JPD424260A/L
/JPD42S4260A/L
24260A
424260L
42S4260A
42S4260L
42s4260
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Untitled
Abstract: No abstract text available
Text: HN29VT800 Series, HN29VB800 Series 1048576-word X 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-781A Z Rev. 1.0 Apr. 25, 1997 Description The Hitachi HN29VT800 Series, HN29VB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS R ash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase
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HN29VT800
HN29VB800
1048576-word
524288-word
16-bit
ADE-203-781A
8-bit/512-kword
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PDF
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Untitled
Abstract: No abstract text available
Text: Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Blt CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High performance ■ CMOS low power consumption ■ — 30 mA maximum active current — 100 nA maximum standby current
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Am28F256A
32-Pin
033A1b
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PDF
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mitsubishi ordering information
Abstract: 00336b
Text: HN29WT800 Series HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537A Z Rev. 1.0 May. 9, 1997 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase
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HN29WT800
HN29WB800
1048576-word
524288-word
16-bit
ADE-203-537A
8-bit/512-kword
mitsubishi ordering information
00336b
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am79C981 Integrated Multiport Repeater Plus IMR+™ Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Enhanced version of AMD's Am79C980 Integrated Multiport Repeater™ (IMR™) chip with the following enhancements: - Additional Management Port features
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Am79C981
Am79C980
Am79C987
10BASE-F
10BASE-T
10BASE-T
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PDF
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21171-BA
Abstract: 21171-CA DSW 100 M2 12H18 21164a tb0j
Text: DECchip 21171 Core Logic Chipset Technical Reference Manual Order Number: EC-QE18A-TE Revision/Update Information: Preliminary—Subject to Change Digital Equipment Corporation Maynard, Massachusetts • a a m i 3 t. 0 0 3 3 7 3 3 022 ■ Powered by ICminer.com Electronic-Library Service CopyRight 2003
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DECchip21171
EC-QE18A-TE
HF3-15A
264113b
21171-BA
21171-CA
DSW 100 M2
12H18
21164a
tb0j
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PDF
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Untitled
Abstract: No abstract text available
Text: P r o d u c t S p e c if ic a t io n Z86E04/08 OTP CMOS Z8 8-BlT MICROCONTROLLER FEATURES • 18-Pin Package DIP, SOIC 124 Bytes of General-Purpose RAM ■ Low Noise Programmable Two Programmable 8-Bit Counter/Timers Each with a 6-Bit Programmable Prescaler.
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Z86E04/08
18-Pin
Z86E08
Z86E04
Z86E0812PSC
Z86E0812SSC
Z86E0408PSC
Z86E0808SSC
86E08
Z86E08,
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Untitled
Abstract: No abstract text available
Text: RX1305 • Ideal for 418 MHz, 3 V Data Receivers in U K a nd USA • High-Sensitivity Passive Design with No R F Oscillation • 5 kb/s Baseband Data Rate • Sim ple to A p p ly with Low External Parts Count • Rugged, Surface-M ount Package with 1.3 cm2 Footprint
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RX1305
RX1305
CHP-X-02-120994AC
D033fl
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM372F3200AK3 DRAM Module ELECTRONICS KMM372F3200AK3/AS3, KMM372F3280AK3/AS3 Extended Data Out Mode 32Mx72 DRAM DIMM with ECC, 3.3V Preliminary GENERAL DESCRIPTION FEATURES The Samsung KMM372F320 8 0A is a 32M bit x 72 Dynamic RAM high density memory module. The
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KMM372F3200AK3
KMM372F3200AK3/AS3,
KMM372F3280AK3/AS3
32Mx72
KMM372F320
16Mx4bit
400mil
48pin
168-pin
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PDF
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3BS03
Abstract: No abstract text available
Text: HN29WT800 Series HN29WB800 Series 1048576-word x 8-bit / 524288-word X 16-bit CMOS Flash Memory HITACHI ADE-203-537A Z Rev. 1.0 May. 9,1997 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase
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OCR Scan
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HN29WT800
HN29WB800
1048576-word
524288-word
16-bit
ADE-203-537A
8-bit/512-kword
3BS03
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PDF
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