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    D045 Search Results

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    G861AD04511T1EU Amphenol Communications Solutions Wafer 2.54mm Pitch STR DIP, 1x4Pin, MATTE TIN, NY66, TAIL=3.4mm, Color-CREAM, Halogen Free, Friction Visit Amphenol Communications Solutions
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    D045 Price and Stock

    ROHM Semiconductor BV1HD045EFJ-CE2

    AUTOMOTIVE 1CH 45 M HIGH-SIDE SW
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    DigiKey BV1HD045EFJ-CE2 Cut Tape 4,757 1
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    BV1HD045EFJ-CE2 Digi-Reel 4,757 1
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    BV1HD045EFJ-CE2 Reel 2,500 2,500
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    Mouser Electronics BV1HD045EFJ-CE2 4,237
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    Newark BV1HD045EFJ-CE2 Cut Tape 73 1
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    Chip1Stop BV1HD045EFJ-CE2 Cut Tape 2,454
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    CoreStaff Co Ltd BV1HD045EFJ-CE2 72
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    Visual Communications Company VBL3D0450C

    VBL SERIES,PCB MOUNT,3MM,.45"L,D
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    DigiKey VBL3D0450C Bulk 3,438 1
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    Mouser Electronics VBL3D0450C 1,341
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    RS VBL3D0450C Bulk 1,000 1
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    Samtec Inc FFSD-17-D-04.50-01-N

    .050 X .050 C.L. FEMALE IDC ASSE
    Free Sample
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    DigiKey FFSD-17-D-04.50-01-N Bulk 102 1
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    Samtec Inc FFSD-22-D-04.50-01-N

    .050 X .050 C.L. FEMALE IDC ASSE
    Free Sample
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    DigiKey FFSD-22-D-04.50-01-N Bulk 99 1
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    Samtec Inc IDSD-32-D-04.50-G

    INSULATION DISPLACEMENT TERMINAL
    Free Sample
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    DigiKey IDSD-32-D-04.50-G Bulk 77 1
    • 1 $19.85
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    D045 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    18f24k22

    Abstract: PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi
    Text: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412B Note the following details of the code protection feature on Microchip devices: •


    Original     		PDF PIC18 F2X/4XK22 28/40/44-Pin, DS41412B DS41412B-page 18f24k22 PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi

    AD5450

    Abstract: AD8038 OP177 AD5451 AD5452 AD5453 EVAL-AD5453EBZ
    Text: 8-/10-/12-/14-Bit High Bandwidth Multiplying DACs with Serial Interface AD5450/AD5451/AD5452/AD5453 FEATURES FUNCTIONAL BLOCK DIAGRAM 12 MHz multiplying bandwidth INL of ±0.25 LSB @ 8-bit 8-lead TSOT and MSOP packages 2.5 V to 5.5 V supply operation Pin-compatible 8-/10-/12-/14-bit current output DACs


    Original     		PDF 8-/10-/12-/14-Bit AD5450/AD5451/AD5452/AD5453 AD5450/ AD5451/ AD5452/ AD5453 AD5450 AD8038 OP177 AD5451 AD5452 AD5453 EVAL-AD5453EBZ

    ADM6316AY27ARJZ-R7

    Abstract: ADM6322xxARJ-RL7 ADM6316CY29-ARJZ-R7 ADM6320CX29-ARJZ-R7 ADM6321BZ25ARJZ-R7 ADM6319xxARJ-RL7 ADM6322 ADM6316 ADM6318CY29ARJZ-R7 ADM6318
    Text: Supervisory Circuits with Watchdog and Manual Reset in 5-Lead SOT-23 FEATURES FUNCTIONAL BLOCK DIAGRAMS 26 reset threshold options 2.5 V to 5 V in 100 mV increments 4 reset timeout options 1 ms, 20 ms, 140 ms, and 1120 ms minimum


    Original     		PDF OT-23 7/ADM6318/ADM6319/ADM6320/ADM6321/ADM6322 OT-23 ADM6316 ADM6319/ADM6322. D04533-0-10/10 ADM6316AY27ARJZ-R7 ADM6322xxARJ-RL7 ADM6316CY29-ARJZ-R7 ADM6320CX29-ARJZ-R7 ADM6321BZ25ARJZ-R7 ADM6319xxARJ-RL7 ADM6322 ADM6316 ADM6318CY29ARJZ-R7 ADM6318

    pin diagram of PIC18f45k22

    Abstract: PIC18F45K22 18F25K22 pic18F26K22 example C codes PIC18F26k22 PIC18F k22 PIC18LF26K22 PIC18F46K22 DS41412D PIC18FXXK22
    Text: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412D Note the following details of the code protection feature on Microchip devices: •


    Original     		PDF PIC18 F2X/4XK22 28/40/44-Pin, DS41412D DS41412D-page pin diagram of PIC18f45k22 PIC18F45K22 18F25K22 pic18F26K22 example C codes PIC18F26k22 PIC18F k22 PIC18LF26K22 PIC18F46K22 DS41412D PIC18FXXK22

    ADR430

    Abstract: ADR435 ADR430A ADR430B ADR431 ADR431A ADR431B ADR433 ADR433A ADR434
    Text: Ultralow Noise XFET Voltage References with Current Sink and Source Capability ADR430/ADR431/ADR433/ADR434/ADR435/ADR439 FEATURES PIN CONFIGURATIONS Low noise 0.1 Hz to 10.0 Hz : 3.5 V p-p @ 2.5 V output No external capacitor required Low temperature coefficient


    Original     		PDF ADR430/ADR431/ADR433/ADR434/ADR435/ADR439 ADR430: ADR431: ADR433: ADR434: ADR435: ADR439: ADR43x ADR430 ADR435 ADR430A ADR430B ADR431 ADR431A ADR431B ADR433 ADR433A ADR434

    bby36

    Abstract: bby27 BBY24-S1 BBY25-S1 BBY26-S1 BBY27-S2 BBY33DA2 BBY34D BBY35F D035
    Text: SIEMENS AKTIEN 6ESELLS CHA F bGE D Û2 3£b 05 D045M34 b n B IS IE Û Microwave, RF & Tuner Diodes 0 7 -/7 For complete package outlines, refsr to pages PO-1 through PO-6 Hyperabrupt Varactors Maximum Ratings ^R V BBY34D BBY35F BBY36 Characteristics T =25°C


    OCR Scan     		PDF D045434 BBY34D BBY35F BBY36 BBY24-S1 BBY25-S1 BBY26-S1 bby27 BBY27-S2 BBY33DA2 D035

    TPI80

    Abstract: No abstract text available
    Text: • 7^ 5 3 7 D045344 7 CÌG ■ SGTH SGS-THOMSON * 7£ [M M iL iM *! _ TPI80 / TPI120 TRIBALANCED PROTECTION FOR ISDN INTERFACES PR ELIM IN A R Y D A TASHEET DESCRIPTION TRIBALANCED PROTECTION ■ Dedicated devices for ISDN interfaces and


    OCR Scan     		PDF D045344 TPI80 TPI120 TPI80/

    BFQ254

    Abstract: BFQ234 UBB692 sot172a3
    Text: Product specification Philips Semiconductors r- 7 ^ 3 S " / 7 BFQ254; BFQ254/I PNP 1 GHz video transistor PHILIPS 7110fi2ti D045b3D ITI B I P H I N SbE » INTERNATIONAL PINNING DESCRIPTION PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes,


    OCR Scan     		PDF 33-/Z BFQ254; BFQ254/I 711062b D045b3D OT172A1 OT172A3 BFQ254 OT172A1) BFQ254/I BFQ234 UBB692 sot172a3

    BFR96

    Abstract: BFR96 philips BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFQ32 4 20 mA 1992 transistor bfr96 philips bfq32 BFR96$ a 933 transistor
    Text: Philips Sem iconductors Product specification ^ NPN 5 GHz wideband transistor DESCRIPTION VllDfiEb D04577b lfl7 « P H I N SbE D PHILIPS INTERNA TIONAL BFR96 PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as


    OCR Scan     		PDF BFR96 DD4S77b ON4487) BFQ32. coll801 711082b BFR96 philips BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFQ32 4 20 mA 1992 transistor bfr96 philips bfq32 BFR96$ a 933 transistor

    Untitled

    Abstract: No abstract text available
    Text: 4302271 D045b7b fifl4 H H A S ££ H A R R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL130 D, R, H) 2N7272D, 2N7272R 2N7272H Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 8A. 100V, RDS(on) • 0.180«


    OCR Scan     		PDF D045b7b FRL130 2N7272D, 2N7272R 2N7272H 100KRAD 300KRAD 1000KRAD 3000KRAD

    SOT-173

    Abstract: SOT173 SOT173 RF transistor NPN planar RF transistor BFP540 wideband transistor sot173
    Text: Philips Objective specification 3 !~~^3 NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES 5bE D • BFP540 711DflSb D0453flfci HT2 ■ PHIN PINNING PIN • High power gain • Low noise figure


    OCR Scan     		PDF BFP540 QQ453Ã OT173X) BFP540 OT173 OT173X OT173. OT173X. SOT-173 SOT173 SOT173 RF transistor NPN planar RF transistor wideband transistor sot173

    Untitled

    Abstract: No abstract text available
    Text: Philips Objective specification "T-13 /"* NPN 9 GHz wideband transistor P H I L IP S I N T E R N A T I O N A L FEATURES SbE D • BFP540 7 1 1 D 6 5 b D0453flfci 4T2 II PHIN PINNING • High power gain


    OCR Scan     		PDF OT173X) 8FP540 OT173 BFP540 D0453flfci

    2269H

    Abstract: No abstract text available
    Text: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY7216C1EG-80H 216-WORD 72-BIT THMY7216C1EG TC59S6408FT 72-bit THMY7216C1EG) 2269H

    TCK-1000

    Abstract: D038 toshiba M7
    Text: TO SH IBA THM Y6480F1 BEG-80 TEN TA TIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388, 6 O8-W O RD B Y 64-BIT SYN CH R O N O U S DRAM M ODULE D ESCRIPTIO N The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF Y6480F1 BEG-80 64-BIT THMY6480F1BEG 608-word TC59S6408BFT 64-bit THMY6480F1 TCK-1000 D038 toshiba M7

    Untitled

    Abstract: No abstract text available
    Text: IBM13M16734BCD 16M x 72 1 B ank R eg istered/B uffered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 16Mx72 Synchronous DRAM DIMM • Performance: -10 j Device Latency j Clock Frequency j -260 | -360 I 3 j 2 ; 2 66 j 100 5 100 j


    OCR Scan     		PDF IBM13M16734BCD 168-Pin 16Mx72 66/100MHz PC100 19L7292 E93875A 9L7292

    transistor BFR91

    Abstract: BFR91 transistor BFR91 philips bfq23 BFQ23 BFR91 NPN 6 GHz Wideband Transistor
    Text: P hilips Sem iconductors Product specification 7= -3 / ' / 7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION £ SbE D 7110ö2ti 004.5704 T^O * P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use In RF amplifiers such as in aerial


    OCR Scan     		PDF BFR91 ON4186) BFQ23. 7110fi2Li BFR91/02 7110flEb D0457GA transistor BFR91 BFR91 transistor BFR91 philips bfq23 BFQ23 BFR91 NPN 6 GHz Wideband Transistor

    D018

    Abstract: D019 D032
    Text: TOSHIBA THMY51E10C70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10C is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804CFT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF THMY51E10C70 THMY51E10C70, THMY51E10C75, THMY51E10C80 864-word 72-bit TC59SM804CFT D018 D019 D032

    Intel 1103 DRAM

    Abstract: D03B intel 1103 ram D018 D019 D032
    Text: TOSHIBA THMY6432G1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS D RAM MODULE DESCRIPTION The THMY6416E1BEG is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF Y6432G1EG-80 432-WORD 64-BIT THMY6416E1BEG TC59SM708FT 64-bit Intel 1103 DRAM D03B intel 1103 ram D018 D019 D032

    D018

    Abstract: D019 D032 D051 THMY51E10B70
    Text: T O S H IB A THMY51E10B70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10B is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF THMY51E10B70 864-WORD 72-BIT THMY51E10B TC59SM804BFT 72-bit aY51E10B70 D018 D019 D032 D051

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A THLY648031 BFG-80,-80L,-10,-10L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY648031BFG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT/BFTL DRAMs on a printed circuit board.


    OCR Scan     		PDF THLY648031 608-WORD 64-BIT THLY648031BFG TC59S6408BFT/BFTL 144-pin

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY721661 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY721661 BEG-80 216-WORD 72-BIT THMY721661BEG TC59S6408BFT/BFTL 72-bit

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY6480F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY6480F1 BEG-80 608-WORD 64-BIT THMY6480F1BEG TC59S6408BFT 64-bit

    HD15303

    Abstract: No abstract text available
    Text: HD 153035F 56-Mbps Data Channel Processor # H ITA CH I _ Under Development Description The HD153035F is a 56 Mbps 1-7 ENDEC data separator with built-in read pulse detector, active filter, frequency synthesizer and synchronizer developed for use in magnetic disk drives.


    OCR Scan     		PDF 153035F 56-Mbps HD153035F 56Mbps. 84MHuctor HD15303

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY7280D1EG-80H TENTATIVE T O SH IB A H YBRID D IG ITA L IN TEG R A T ED CIRCU IT 8,388,608-W ORD BY 72-BIT SYNCHRONOUS DRAM M O DULE DESCRIPTION The THMY7280D1EG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408FT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY7280D1EG-80H 72-BIT THMY7280D1EG 608-word TC59S6408FT 72-bit