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    D054 Price and Stock

    Diodes Incorporated DGD05473FN-7

    IC GATE DRV HALF-BRDG DFN3030-10
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    DigiKey DGD05473FN-7 Cut Tape 13,501 1
    • 1 $1.26
    • 10 $0.79
    • 100 $0.5241
    • 1000 $0.37738
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    DGD05473FN-7 Digi-Reel 13,501 1
    • 1 $1.26
    • 10 $0.79
    • 100 $0.5241
    • 1000 $0.37738
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    DGD05473FN-7 Reel 12,000 3,000
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    • 10000 $0.33322
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    Mouser Electronics DGD05473FN-7 7,739
    • 1 $0.56
    • 10 $0.559
    • 100 $0.414
    • 1000 $0.372
    • 10000 $0.305
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    Newark DGD05473FN-7 Cut Tape 880 1
    • 1 $0.289
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    TME DGD05473FN-7 1
    • 1 $0.793
    • 10 $0.529
    • 100 $0.471
    • 1000 $0.436
    • 10000 $0.37
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    Avnet Asia DGD05473FN-7 8 Weeks 3,000
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    Avnet Silica DGD05473FN-7 27,000 10 Weeks 3,000
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    New Advantage Corporation DGD05473FN-7 6,000 1
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    Win Source Electronics DGD05473FN-7 170,000
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    Diodes Incorporated DGD05463FN-7

    IC GATE DRV HALF-BRDG DFN3030-10
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    DigiKey DGD05463FN-7 Reel 9,000 3,000
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    • 10000 $0.38295
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    Mouser Electronics DGD05463FN-7 4,745
    • 1 $1.41
    • 10 $0.745
    • 100 $0.519
    • 1000 $0.428
    • 10000 $0.358
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    Newark DGD05463FN-7 Cut Tape 3,527 1
    • 1 $0.942
    • 10 $0.855
    • 100 $0.683
    • 1000 $0.473
    • 10000 $0.473
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    TME DGD05463FN-7 1
    • 1 $0.838
    • 10 $0.621
    • 100 $0.553
    • 1000 $0.513
    • 10000 $0.435
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    Avnet Silica DGD05463FN-7 10 Weeks 3,000
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    Diodes Incorporated DGD05473FNQ-7

    IC GATE DRV HALF-BRDG DFN3030-10
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    DigiKey DGD05473FNQ-7 Cut Tape 4,015 1
    • 1 $1.49
    • 10 $0.942
    • 100 $0.6313
    • 1000 $0.46018
    • 10000 $0.46018
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    DGD05473FNQ-7 Digi-Reel 4,015 1
    • 1 $1.49
    • 10 $0.942
    • 100 $0.6313
    • 1000 $0.46018
    • 10000 $0.46018
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    DGD05473FNQ-7 Reel 3,000 3,000
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    • 10000 $0.40872
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    Mouser Electronics DGD05473FNQ-7 2,722
    • 1 $1.41
    • 10 $0.792
    • 100 $0.551
    • 1000 $0.454
    • 10000 $0.347
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    Newark DGD05473FNQ-7 Cut Tape 2,195 1
    • 1 $1.02
    • 10 $0.878
    • 100 $0.694
    • 1000 $0.51
    • 10000 $0.51
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    TME DGD05473FNQ-7 1
    • 1 $0.827
    • 10 $0.661
    • 100 $0.588
    • 1000 $0.545
    • 10000 $0.462
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    Avnet Silica DGD05473FNQ-7 10 Weeks 3,000
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    Mean Well NSD05-48S5

    DC DC CONVERTER 5V 5W
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    DigiKey NSD05-48S5 Tray 311 1
    • 1 $9.62
    • 10 $9.62
    • 100 $8.19275
    • 1000 $7.69668
    • 10000 $7.69668
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    Mouser Electronics NSD05-48S5 32
    • 1 $9.16
    • 10 $8.75
    • 100 $7.78
    • 1000 $7.77
    • 10000 $7.77
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    Mean Well NSD05-48S15

    DC DC CONVERTER 15V 5W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NSD05-48S15 Tray 257 1
    • 1 $9.62
    • 10 $9.62
    • 100 $8.19275
    • 1000 $7.69668
    • 10000 $7.69668
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    Mouser Electronics NSD05-48S15 5
    • 1 $8.78
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    • 100 $7.72
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    D054 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    On semiconductor date Code sot-143

    Abstract: 846AB SOT23 A1 TSSOP-8 footprint and soldering sot-23 d056 sot23 8X SOT23-5 318 SOT23 marking L2 sot23 MARKING CODE SOT23-5 HE marking L2 SOT23 6
    Text: PACDN042 Transient Voltage Suppressors and ESD Protectors Product Description The PACDN042/43/44/45/46 family of transient voltage suppressor arrays provide a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge ESD .


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    PDF PACDN042 PACDN042/43/44/45/46 MIL-STD-883D OT23-3 OT23-5 PACDN042/D On semiconductor date Code sot-143 846AB SOT23 A1 TSSOP-8 footprint and soldering sot-23 d056 sot23 8X SOT23-5 318 SOT23 marking L2 sot23 MARKING CODE SOT23-5 HE marking L2 SOT23 6

    18f24k22

    Abstract: PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi
    Text: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412B Note the following details of the code protection feature on Microchip devices: •


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    PDF PIC18 F2X/4XK22 28/40/44-Pin, DS41412B DS41412B-page 18f24k22 PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi

    LC1210

    Abstract: PIC H501 OSC500 ic c575 diagram SMDC110F K3638 SMDC110F-2 adc c520 cd 1691 cp cp c531
    Text: 12位, 80 MSPS/105 MSPS/125 MSPS, 18V模数转换器 AD9233 功能框图 特性 应用 超声设备 中频采样的通信接收机 IS-95CDMA-OneIMT-2000 电池供电仪表 手持式示波仪 低成本数字示波器 概述 AD9233是一款单芯片、12位、80 MSPS/ 105 MSPS/125 MSPS


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    PDF MSPS/105 MSPS/125 AD9233 IS-95CDMA-OneIMT-2000 AD92331280 SNR69 dBFS70 LC1210 PIC H501 OSC500 ic c575 diagram SMDC110F K3638 SMDC110F-2 adc c520 cd 1691 cp cp c531

    pin diagram of PIC18f45k22

    Abstract: PIC18F45K22 18F25K22 pic18F26K22 example C codes PIC18F26k22 PIC18F k22 PIC18LF26K22 PIC18F46K22 DS41412D PIC18FXXK22
    Text: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412D Note the following details of the code protection feature on Microchip devices: •


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    PDF PIC18 F2X/4XK22 28/40/44-Pin, DS41412D DS41412D-page pin diagram of PIC18f45k22 PIC18F45K22 18F25K22 pic18F26K22 example C codes PIC18F26k22 PIC18F k22 PIC18LF26K22 PIC18F46K22 DS41412D PIC18FXXK22

    AD5932 evaluation board

    Abstract: AD5932 AD59321
    Text: Programmable Frequency Scan Waveform Generator AD5932 Data Sheet FEATURES GENERAL DESCRIPTION Programmable frequency profile No external components necessary Output frequency up to 25 MHz Burst-and-listen capability Preprogrammable frequency profile minimizes number of


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    PDF 16-lead, AD5932 AD59321 RU-16) AD5932YRUZ AD5932YRUZ-REEL7 EVAL-AD5932EBZ 16-Lead RU-16 AD5932 evaluation board AD5932

    AD520* differential amplifier

    Abstract: ADR440 ADR441 ADR443 ADR444 ADR445
    Text: Ultralow Noise, LDO XFET Voltage References with Current Sink and Source ADR440/ADR441/ADR443/ADR444/ADR445 PIN CONFIGURATIONS Ultralow noise 0.1 Hz to 10 Hz ADR440: 1 V p-p ADR441: 1.2 μV p-p ADR443: 1.4 μV p-p ADR444: 1.8 μV p-p ADR445: 2.25 μV p-p


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    PDF ADR440/ADR441/ADR443/ADR444/ADR445 ADR440: ADR441: ADR443: ADR444: ADR445: ADR440/ ADR441/ ADR443/ ADR444/ AD520* differential amplifier ADR440 ADR441 ADR443 ADR444 ADR445

    63b01

    Abstract: AC1331 3B01
    Text: 3B Series 16 Channel Backplane 3B01 FEATURES Mix and Match 3B Series I/O Module Capability Factory Mutual FM Approved CE Certified +1500 V peak Channel/Channel and Input/Output Isolation -25oC to +85oC Temperature Range LEDs indicate when power is applied


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    PDF -25oC D05407-0-2/05 63b01 AC1331 3B01

    M1110

    Abstract: D004 ic P155
    Text: M1110 Parallel Ein-/Ausgabe Box Beckhoff II/O-System M1110 Parallel Ein-/Ausgabe Box Technische Beschreibung Eiserstraße 5 33415 Verl Datum 05.05.94 Telefon 05246/709-0 Telefax 05246/70980 Version 2.1 Seite 1 von 17 M1110 Parallel Ein-/Ausgabe Box Beckhoff II/O-System


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    PDF M1110 M1110 D12-4 D11-1 D11-2 D11-3 D11-4 D10-1 D10-2 D004 ic P155

    3B03

    Abstract: AC1333
    Text: 3B Series 4 Channel Backplane 3B03 FEATURES Mix and Match 3B Series I/O Module Capability Factory Mutual FM Approved CE Certified +1500 V peak Channel/Channel and Input/Output Isolation -25oC to +85oC Temperature Range LEDs indicate when power is applied


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    PDF -25oC D05409-0-2/05 3B03 AC1333

    Untitled

    Abstract: No abstract text available
    Text: Low Power, Low Noise Voltage References with Sink/Source Capability ADR360/ADR361/ADR363/ADR364/ADR365/ADR366 FEATURES APPLICATIONS Battery-powered instruments Portable medical instruments Data acquisition systems Industrial process controls Automotive NC 1


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    PDF ADR360/ADR361/ADR363/ADR364/ADR365/ADR366 ADR36x D05467-0-10/10

    MS-012-AA

    Abstract: No abstract text available
    Text: Dual-Channel Digital Isolator ADuM1210 FEATURES GENERAL DESCRIPTION Narrow body, 8-lead SOIC Low power operation 5 V operation 1.1 mA per channel maximum @ 0 Mbps to 2 Mbps 3.7 mA per channel maximum @ 10 Mbps 3 V operation 0.8 mA per channel maximum @ 0 Mbps to 2 Mbps


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    PDF ADuM1210 60747-5-2E ADuM1210BRZ ADuM1210BRZ-RL72 D05459 MS-012-AA

    transistor marking 4D

    Abstract: BC859BW BC859CW BC859W BC860AW BC860BW BC860CW BC860W Transistor marking S
    Text: bbS B 'm Philips Semiconductors D0544fl4 012 IAPX Product specification PNP general purpose transistor A MER FEATURES BC859W; BC860W PHILIPS/DISCRETE b?E PIN CONFIGURATION • S- mini package. • Low noise H i. EL 1 c DESCRIPTION PNP transistor in a plastic SOT323


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    PDF D0544fl4 BC859W; BC860W OT323 OT323 BC859W: BC659AW BC859BW BC859CW BC860W: transistor marking 4D BC859W BC860AW BC860BW BC860CW BC860W Transistor marking S

    TMP68661

    Abstract: No abstract text available
    Text: TOSHIBA UC/UP S4E D • c]0,ì 7 2 4 Iì G 0 5 4 G 7 5 TO SHIBA Ö24 * T 0 S 3 TM P68661 1. INTRODUCTION - r - is - 3 1 - a n The TMP68661 enhanced program m able communications interface (EPCI) is a universal synchoronous/asynchronous data communications controller chip th at is an


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    PDF G054G75 P68661 TMP68661 TMP68000 16-bit 54BSC 24BSC

    2269H

    Abstract: No abstract text available
    Text: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.


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    PDF THMY7216C1EG-80H 216-WORD 72-BIT THMY7216C1EG TC59S6408FT 72-bit THMY7216C1EG) 2269H

    tfk 136

    Abstract: No abstract text available
    Text: TOSHIBA THMY6416C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.


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    PDF THMY6416C1BEG-80L 216-WORD 64-BIT THMY6416C1BEG TC59S6408BFT 64-bit THMY6416C1BEG) tfk 136

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS TEMPFET BTS115 Not for new design Replacement: BTS 115A • • • • • N channel Logic Level Enhancement mode Tem perature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Refer to circuit design hints (see chapter Technical Inform ation)


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    PDF BTS115 O-220AB C67078-A5004-A4 fi53Sbà C67078-A5004-A5 PT0533S fiE35b05

    dynamic microphone

    Abstract: D054 Gulton mic 342 buchanan electro-voice
    Text: Sm ooth, wide-range response, and low sensitivity to m echanical shock, com bined w ith functional “ easy to h o ld ” styling, m akes the D 0 5 4 a versatile professional m icrophone suited for any num ber o f uses. The non­ reflecting, fawn beige M icom atte finish elim inates h ot


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    PDF

    u560100

    Abstract: 2SA1318 2sc3331 transistor 2SC3331 2sa131
    Text: Ordering number: EN 16 00A 2SA1318/2SC3331 PNP/ NPN Epitaxial Planar Silicon Transistors A F Am p Applications M, ,ár%& Use . Capable of being used in the low frequenoy to high frequency range. Features ♦ Large current oapaeity and wide ASO. : 2SA1318


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    PDF 2SA1318/2SC3331 2SA1318 u560100 2sc3331 transistor 2SC3331 2sa131

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A THMY728071BEG-80.-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY728071BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.


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    PDF THMY728071BEG-80 72-BIT THMY728071BEG 608-word TC59S6408BFT/BFTL 72-bit THMY728071BEG)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY7280D1EG-80H TENTATIVE T O SH IB A H YBRID D IG ITA L IN TEG R A T ED CIRCU IT 8,388,608-W ORD BY 72-BIT SYNCHRONOUS DRAM M O DULE DESCRIPTION The THMY7280D1EG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408FT DRAMs and an unbuffer on a printed circuit board.


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    PDF THMY7280D1EG-80H 72-BIT THMY7280D1EG 608-word TC59S6408FT 72-bit

    814260

    Abstract: PJ 1269
    Text: November 1993 Edition 2.0 FUJITSU DATA SHEET M B 8 14260-60/-70/-80 CM O S 2 5 6 K X 16 BIT FAST PAGE M O D E DYNAMIC RAM CMOS 262,144 x 16 bit Fast Page Mode Dynamic RAM The Fujitsu MB814260 is a fully decoded CMOS Dynamic RAM DRAM that oontains 4,194,304


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    PDF MB814260 512x16 MB814260-60/-70/-80 MB814260-60 MB814260-70 MB814260-80 40-LEAD LCC-40P-M01) 814260 PJ 1269

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THLD25N01 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD25N01B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM815BFT DRAMs on a printed circuit board.


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    PDF THLD25N01 432-WORD 64-BIT THLD25N01B TC59WM815BFT 64-bit

    OQ45

    Abstract: D018 D019 D032
    Text: TOSHIBA THMY7216D0CEG-75,-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216D0CEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6404CFT DRAMs and PLL/Registers on a printed circuit board.


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    PDF Y7216D0CEG-75 216-WORD 72-BIT THMY7216D0CEG TC59S6404CFT 168-pin PC133 PC100 OQ45 D018 D019 D032

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THLY641641 FG-80t-80L,-10,-1 OL TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY641641FG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM716FT/FTL DRAMs on a printed circuit board.


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    PDF LY641641 FG-80 216-WORD 64-BIT THLY641641FG TC59SM716FT/FTL 144-pin