SN74S1055SD
Abstract: No abstract text available
Text: SN74S1055SD IL08 BUS TERMINATION ARRAY D02 D03 D04 D05 D06 D07 D08 GND GND VCC +5 V VCC (+5 V) D09 D10 D11 D12 D13 D14 D15 D16 —SIDE VIEW— 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 D01 D01 D02 D03 D04 D05 D06 D07 D08 D09 D10 D11 D12 D13 D14 D15 D16 VCC VCC
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SN74S1055SD
SN74S1055SD
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Untitled
Abstract: No abstract text available
Text: SN74S1053NS IL08D BUS TERMINATION ARRAY —TOP VIEW— 20 VCC VCC 1 D16 19 2 D01 D15 D14 D13 18 17 16 3 4 D02 D03 D12 15 5 6 D04 D05 D11 D10 14 13 D9 12 7 8 9 D06 D07 D08 11 GND GND 10 D01 D02 D03 D04 D05 D06 D07 D08 D09 D10 D11 D12 D13 D14 D15 D16 2 3 4 5
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SN74S1053NS
IL08D
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hm8694
Abstract: mc1377 TP6508 AOER2 GEC 180 PSX Topro Technology 97c4 5BC4 64X204 dpsN
Text: TOPRO TP6508 Advanced Panel-2 Video Graphic Array Specification Version: 2.1 Revision: 2.02 1999/11/25 Topro Technology Incorporation Revision History Revision 2.02 2.1 Date . 88.04.12 88.10.13 Comment . Change for Topro version . Update SREG CE bit-3 register description .
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TP6508
TP6508
in-61
hm8694
mc1377
AOER2
GEC 180 PSX
Topro Technology
97c4
5BC4
64X204
dpsN
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Untitled
Abstract: No abstract text available
Text: Z8401510FEC 1/4 IL00 * C-MOS INTELLIGENT PERIPHERAL CONTROLLER VDD (+5V) GND VDD (+5V) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 GND 80 79 78 77
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Z8401510FEC
A0-A15
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Untitled
Abstract: No abstract text available
Text: CXD2190R 1/4 IL08 DIGITAL VCR AUDIO REC/PB SIGNAL PROCESSOR GND GND VDD GND VDD GND GND GND VDD GND GND VDD GND GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99
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CXD2190R
D2912
D2913
CXD2187R
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MOV-471KD14
Abstract: MOV-431Kd07 MOV471KD07 MOV431KD14 MOV-431KD14 mov431kd10 MOV241KD10 MOV470KD14 mov431k MOV471
Text: Metal Oxide Varistor N - Standard Series - Straight Lead Disk Size IT mA Varistor Voltage Range (V) D Max. Low Voltage 18 ~ 68 5mm 0.1 7.5 High Voltage 82 ~ 750 Low Voltage 18 ~ 68 7mm 1 9.0 High Voltage 82 ~ 820 Low Voltage 18 ~ 68 10mm 1 12.5 High Voltage
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MOV781KD20S
MOV821KD20S
MOV911KD20S
MOV102KD20S
MOV112KD20S
MOV182KD20S
MOV-471KD14
MOV-431Kd07
MOV471KD07
MOV431KD14
MOV-431KD14
mov431kd10
MOV241KD10
MOV470KD14
mov431k
MOV471
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Untitled
Abstract: No abstract text available
Text: CXD8033Q 1/2 IL00 * C-MOS GATE ARRAY NC GND 32 31 30 29 28 27 26 25 24 23 22 21 20 GND VDD (+5V) NC GND VDD (+5V) GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 52 53 54 55 56 57 58 59 60 61 62 63 64 NC NC 51 50 49 48 47 46 45 44 43 42 41 40
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CXD8033Q
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D1417
Abstract: 75471K 431k d07 15 58 391k d14 112k d14
Text: T Thickness max. D5 to D20 Straight Lead Dimension unit:mm S：Straight Lead Part Code D05 T L H D d E L:20mm min unit:mm D H H1 d ± E ± SIZE max max max 0.05 0.8 D07 D10 D14 D20 182K 12.5 12.5 15.6 152K 11.0 11.0 13.2 112K 8.5 8.5 10.1 102K 8.3 8.3 9.5
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Untitled
Abstract: No abstract text available
Text: Dual, 12-Bit, 80 MSPS/125 MSPS, Serial LVDS 1.8 V Analog-to-Digital Converter AD9635 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM 1.8 V supply operation Low power: 115 mW per channel at 125 MSPS with scalable power options SNR = 71 dBFS to Nyquist SFDR = 93 dBc at 70 MHz
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12-Bit,
MSPS/125
AD9635
ANSI-644,
AD9635BCPZ-80
AD9635BCPZRL7-80
AD9635BCPZ-125
AD9635BCPZRL7-125
AD9635-125EBZ
32-Lead
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diode D07-15
Abstract: D07 15 TS317CW diode marking code cz diode d07 D07 15 diode 18BSC TS317 TS317CM TS317CP
Text: TS317 3-Terminal Adjustable Positive Voltage Regulator TO-220 TO-263 2 D PAK TO-252 (DPAK) SOT-223 Pin Definition: 1. Adjustable 2. Output 3. Input Heatsink is connected to Pin 2 General Description The TS317 is adjustable 3-terminal positive voltage regulator capable of supplying in excess of 1.5A over an output
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TS317
O-220
O-263
O-252
OT-223
TS317
O-220/TO-263
diode D07-15
D07 15
TS317CW
diode marking code cz
diode d07
D07 15 diode
18BSC
TS317CM
TS317CP
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diode D07-15
Abstract: D07 15
Text: TS317 3-Terminal Adjustable Positive Voltage Regulator TO-220 TO-263 2 D PAK TO-252 (DPAK) SOT-223 Pin Definition: 1. Adjustable 2. Output 3. Input Heatsink is connected to Pin 2 General Description The TS317 is adjustable 3-terminal positive voltage regulator capable of supplying in excess of 1.5A over an output
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TS317
O-220
O-263
O-252
OT-223
TS317
O-220/TO-y
diode D07-15
D07 15
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ULN 2009
Abstract: MIL-PRF-28800F ultra stable voltage reference 3 GHz SAW oscillator
Text: SAW Products SR D07 Ultra Low Noise, Ultra Stable Oscillator at 1 GHz Specifications Rev. A1 Features .P01 Technical
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RHD5930
Abstract: 5962H1120801KXC RESISTOR NETWORK SMD 16PIN
Text: Advanced Standard Products RadHard-by-Design RHD5930 Digital-to-Analog Converter 11-Bit Ladder Output www.aeroflex.com/RHDseries May 29, 2012 FEATURES ❑ Radiation performance - Total dose: - ELDRS Immune - SEL Immune: - Neutron Displacement Damage: >1 Mrad Si , Dose rate = 50 - 300 rads(Si)/s
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RHD5930
11-Bit
Plai778-9229
SCD5930
5962H1120801KXC
RESISTOR NETWORK SMD 16PIN
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SPH-002T-P0.5
Abstract: Casio lcd casio lcd tft 1.6" COM35T3829 FH26G-67S-0.3SHBW 32 PIN FPC CONNECTOR COM22T2M59 COM55T5108 S1D13513 S1D13742-QFP
Text: Connecting EPSON Display Controllers to Casio LCD Panels Rev.0.90 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.
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DIODE SW-05
Abstract: No abstract text available
Text: DIODES & RECTIFIERS GENERAL PURPOSE Material Description and Application Case Style Dlag. No. Maximum Peak Reverse Voltage Volts pRV If !f s m VF Irr 109 Ge Gen Purp, Fast Switch D07 91 100 0.2 0.5 1 - 110MP Ge Gen Purp, AFC, Matched Diode Pair D07 91 40
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110MP
OT-23
200MHz
T0220
b43125T
0P03SSÃ
DIODE SW-05
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SK3090
Abstract: SK3081 SK3051 SK3311 SK3033A SK3087 SK3091 SK3709 R002 SK3313
Text: D I S T R I B U T O R TH O M SO N / Axial-Lead Rect fiers/Diodes Material Repetitive PRV Vrrm V SK3090/109 SK3311 SK3031A SK3312 SK3017B Ge Si Si Si Si 100 200 400 400 600 SK3313/116 SK3032A SK3033A SK3080 SK3843 Si Si Si Si Si 600 800 1000 1000 1500 SK5006
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DDG34QS
SK3089/112
14dBmax
R-003
SK3709/110MP
SK3709
SK3091
SK3038
SK3090
SK3081
SK3051
SK3311
SK3033A
SK3087
R002
SK3313
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D07 15
Abstract: d07 15 58
Text: DIODES ZENER DIODES BY ASCENDING Vz GLASS PACKAGE C o n tin u e d TYPE V z @ lz TOL VOLTS ±VZ NO M INAL % Zz @ l z lz TEST CURRENT ohms mA MAX /iA •r @ Vr T.C. MAX @ VOLTS %/°C Package 1N964B 13 5 9.50 13 .10 @ 9.9 +.079 D0-7 1N964B JAN 13 5 9.50 13
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1N964B
1N965
1N965A
1N965B
1N966
1N966A
1N966B
D07 15
d07 15 58
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1Nu5
Abstract: IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128
Text: l e m l t r o SEMICONDUCTORS7 " n SemitronicsCorp. INTEX/ SEMITRONICS 'Tz'O I-* 0 7 CORP germanium diodes Max. P tik i H l f ll MM. Farward V o lt« « vo lti Farward Currant <mA) Ravarsa Currant Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m V o tta p
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1N34A
1n38a
1n38b
1n52a
1N55B
1n56a
1n57a
1n58a
1n60a
1n63a
1Nu5
IN418
1Ns4
IN270
1N42
UN309
IN73
1N34A
1N46
1N128
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lN34A
Abstract: Germanium itt
Text: SEMICONDUCTORS7 " le m lt r o n SemitronicsCorp. 'Tz'O I-*0 7 INTEX/ SEMITRONICS CORP germanium diodes Max. P tik iH lf ll MM. Farward V o lt«« vo lti Farward Currant <mA) Ravarsa Currant (MÂ) Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m Vottap
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1N34A
1N38A
1N388
lN34A
Germanium itt
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IN4773
Abstract: IN2976 IN4773A IN536 1N29B IN4772 1H28 IN2822 IN2621 1N137
Text: TEX/ SEflIT R O N IC S CORP^ 27E I> • MAbTEm, 0DD0314 4 ■ semitron hot iine -r-n - 01 - T ' H - II TOLL FREE NUMBER 800-777-3960 discrete devices silicon voltage reference diodes 500 milliwatt temperature compensated 200 milliwatt m T 1N42# 1N1735 Norn.
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OODD314
1N429
1N1735
1N430
1N430A
1N821
1N821A
1N823
1N823A
1N824
IN4773
IN2976
IN4773A
IN536
1N29B
IN4772
1H28
IN2822
IN2621
1N137
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IN2621
Abstract: IN4773 1N2621A Zener C212 IN4772 IN4773A IN537 1n764a 1N29B 1N2169A
Text: TEX/ SEflIT R O N IC S CORP^ 27E I> • MAbTEm, 0DD0314 4 ■ semitron hot iine -r-n - 01 - T ' H - II TOLL FREE NUMBER 800-777-3960 discrete devices silicon voltage reference diodes 500 milliwatt temperature compensated 200 milliwatt m T 1N42# 1N1735 Norn.
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OODD314
1N429
1N1735
1N430
1N430A
1N821
1N821A
1N823
1N823A
1N824
IN2621
IN4773
1N2621A
Zener C212
IN4772
IN4773A
IN537
1n764a
1N29B
1N2169A
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ta 8659 n
Abstract: DO-213AA
Text: Zener Regulator Diodes Micmsemi iÿiwIiÿfcÉSi JANTX1N6327US JANTXV1N6327 JANTXV1N6327US 1N5243A 1N5243A D07 1N5243B 1N5243B (D07) MLL5243B MLL5243B-1 1N6003B 1N6003C 1N6003D 1N6003A MLL5533B ZEN MLL5533B-1 MLL4107 MLL4107-1 1N5244A 1N5244A (D07) 1N5244B
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JANTX1N6327US
JANTXV1N6327
JANTXV1N6327US
1N5243A
1N5243A
1N5243B
1N5243B
MLL5243B
MLL5243B-1
ZEN-52
ta 8659 n
DO-213AA
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SS321 equivalent
Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
Text: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4
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MA1703
MA1704
SS321
SS322
SS324
SS325
SS334
SS337
SE708
DZ800
SS321 equivalent
DIODE 1N9148
1N4307
1N4532
DIODE 1N3605
2N2222 chip
2N2369 transistor
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1n9418
Abstract: 1N941 1N941A 1N941B 1N942 1N942A 1N942B 1N943 1N943A j5304
Text: SEMITRON INDUSTRIES LTD M3E T> 013700^ G00G173 T Œ S L C B - n -i SERIES Zener Reference Diode 11V7 Volts Temperature Compensated FEATURES GLASS D07 • Hermetically sealed ■ DC power dissipation 500mW at 25°C FIG. 1 MECHANICAL DATA ■ Case: Hermetically sealed glass case D07
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G00G173
500mW
500mW
0009VC.
002VC
0029VC.
1n9418
1N941
1N941A
1N941B
1N942
1N942A
1N942B
1N943
1N943A
j5304
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