Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR BA1L3N on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 10 kΩ) • Complementary transistor with BN1L3N ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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Untitled
Abstract: No abstract text available
Text: '$7$ 6+ 7 COMPOUND TRANSISTOR %$/0 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU RU PLGVSHHG VZLWFKLQJ FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip bias resistor (R = 4.7 kΩ, R = 4.7 kΩ) • Complementary transistor with BN1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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C11531E
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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D1825
Abstract: d1833 AN-265 D1531
Text: APPLICATION NOTE AN-265 BUS MATCHING WITH IDT FIFOs BUS MATCHING The following diagrams show how an external byte-oriented bus should be mapped to the 9-bit oriented FIFO. The Bus Matching feature offered in the SuperSync II family is a powerful feature designed to eliminate external MUXes. When used in applications where
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AN-265
36-bit
16-bit
32-bit
IDT72V263
IDT72V273
IDT72V283
IDT72V293
IDT72V2103
IDT72V2113
D1825
d1833
AN-265
D1531
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d1415
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH64S72AVJG-5,-6 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72AVJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4 Sy nchronous DRAMs in TSOP.
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MH64S72AVJG-5
208-BIT
864-WORD
72-BIT
MH64S72AVJG
72-bit
85pin
94pin
10pin
95pin
d1415
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MITSUBISHI LSIs SDRAM 32M
Abstract: MH32S72VJA-6
Text: MITSUBISHI LSIs MH32S72VJA-6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH32S72VJA is 33554432 - word x 72-bit Synchronous DRAM module. This consist of eighteen industry standard
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MH32S72VJA-6
104-BIT
432-WORD
72-BIT
MH32S72VJA
72-bit
85pin
94pin
10pin
95pin
MITSUBISHI LSIs SDRAM 32M
MH32S72VJA-6
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Untitled
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR BA1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 1.0 kΩ, R2 = 10 kΩ) • Complementary transistor with BN1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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nec ap1l2q
Abstract: PA33
Text: DATA SHEET COMPOUND TRANSISTOR AP1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching PACKAGE DRAWING UNIT: mm FEATURES • Current drive available up to 0.7 A • On-chip bias resistor • Low power consumption during drive
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SC-43B
nec ap1l2q
PA33
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MA3560
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR BA1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 1.0 kΩ, R2 = 10 kΩ) • Complementary transistor with BN1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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D1415
Abstract: MH64S72VJG-5
Text: MITSUBISHI LSIs MH64S72VJG-5,-6 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72VJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4 Sy nchronous DRAMs in TSOP.
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MH64S72VJG-5
208-BIT
864-WORD
72-BIT
MH64S72VJG
72-bit
85pin
94pin
10pin
95pin
D1415
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ce1a3q
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR CE1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for
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MH32S72AQJA-7
Abstract: d1415
Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH32S72AQJA-7, -8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72AQJA is 33554432 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen
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MH32S72AQJA-7,
104-BIT
432-WORD
72-BIT
MH32S72AQJA
85pin
94pin
10pin
95pin
MH32S72AQJA-7
d1415
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PA33
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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CE1F3P
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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1N4148 5t
Abstract: MP1305 u7a capacitor magnetic amplifier saturable core EER28 PKS607YN DI-148 TOPSWITCH 242 MP1305 transformer UA7815
Text: DI-148 Design Idea PeakSwitch Multiple Output Flyback Power Supply for Audio Amplifier Using Magnetic Amplifiers to Achieve Better Cross Regulation Application Device Power Output Input Voltage Output Voltage Topology Audio PKS607YN 75 W, 126 W Peak 195 - 265 VAC
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DI-148
PKS607YN
DI-148
1N4148 5t
MP1305
u7a capacitor
magnetic amplifier saturable core
EER28
PKS607YN
TOPSWITCH 242
MP1305 transformer
UA7815
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nec ap1l2q
Abstract: PA33
Text: DATA SHEET COMPOUND TRANSISTOR AP1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching PACKAGE DRAWING UNIT: mm FEATURES • Current drive available up to 0.7 A • On-chip bias resistor • Low power consumption during drive
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SC-43B
nec ap1l2q
PA33
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D1833
Abstract: D1825 AN-265 q815 D916
Text: APPLICATION NOTE AN-265 BUS MATCHING WITH IDT FIFOs BUS MATCHING The following diagrams show how an external byte-oriented bus should be mapped to the 9-bit oriented FIFO. The Bus Matching feature offered in the SuperSync II family is a powerful feature designed to eliminate external MUXes. When used in applications where
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AN-265
36-bit
16-bit
32-bit
IDT72V3640
IDT72V3650
IDT72V3660
IDT72V3670
IDT72V3680
IDT72V3690
D1833
D1825
AN-265
q815
D916
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: Balun ] V ie w T y p e 6 [ D I M E N S I O N S ] U n it: m m < Top V iew > < Bottom & Side V iew > -3.2±0.2IN 4 O U T 1 /I 3 Pin No. n p v/m. wà. 1.6+ 0.2 0.68 0.46 _ r v 1 2 GND OUT2 0.25 0 .6 ± 0.05 N—►N1 0 .4 1 Part Nq EHF F D1615 EHF F D1617 EHF
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FD1615
FD1617
FD1618
FD1621
FD1619
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D3031
Abstract: No abstract text available
Text: DP83265 PRELIMINARY National Semiconductor DP83265 BSI Device FDDI System Interface General Description Features The DP83265 BSI device implements an interface between the National FDDI BMACtm device and a host system. It provides a multi-frame, MAC-level interface to one or more
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DP83265
DP83265
32-bit
OP83265
D3031
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