MARKING D3A
Abstract: Sot-23 MARKING d3a RB400D
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 RB400D Plastic-Encapsulate Diodes SCHOTTKY BARRIER DIODE SOT-23 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 1. ANODE 2. N, C MARKING: D3A
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OT-23
RB400D
MARKING D3A
Sot-23 MARKING d3a
RB400D
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Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Diode CDBT0540-G RoHS Device Features SOT-23 -Small surface mount type. 0.119 3.00 0.110(2.80) 3 -Low reverse current and low forward voltage. 0.056(1.40) 0.047(1.20) -High reliability. 1 2 0.006(0.15) 0.083(2.10) Marking: D3A 0.002(0.05)
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CDBT0540-G
OT-23
QW-BA016
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CDBT0540-G
Abstract: No abstract text available
Text: SMD Schottky Barrier Diode CDBT0540-G RoHS Device Features SOT-23 0.119 3.00 -Small surface mount type. 0.110(2.80) 3 -Low reverse current and low forward voltage. 0.056(1.40) 0.047(1.20) -High reliability. 1 2 0.006(0.15) 0.083(2.10) Marking: D3A 0.002(0.05)
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CDBT0540-G
OT-23
QW-BA016
CDBT0540-G
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes RB400D SCHOTTKY BARRIER DIODE SOT-23 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 1 MARKING: D3A 3 2 Maximum Ratings @Ta=25℃
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OT-23
RB400D
OT-23
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Untitled
Abstract: No abstract text available
Text: ULTRA FAST RECOVERY POWER RECTIFIER 1N5811D3 Variant Options D3A to D3H • DLCC3 - Light Weight Hermetic Ceramic Surface Mount Package is designed as a drop In replacement for “D-5B” / “EMELF” package† • Ultra Fast Reverse Recovery • Switching Power Supply Applications
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1N5811D3
25mA/Â
1N5811D3B-JQRS
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Untitled
Abstract: No abstract text available
Text: SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L Schottky barrier Diodes + 2. 80¡ À0. 05 1. 60¡ À0. 05 1. 9 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 0. 35 Marking: D3A 2. 92¡ À0. 05
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OT-23-3L
OT-23-3L
RB400D
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MARKING D3A
Abstract: RB400D
Text: SOT-23-3L Schottky barrier Diodes + 2. 80¡ À0. 05 1. 60¡ À0. 05 1. 9 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 0. 35 Marking: D3A 2. 92¡ À0. 05 RB400D Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃
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OT-23-3L
RB400D
MARKING D3A
RB400D
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MARKING D3A
Abstract: RB400D D3A marking D3A DIODE
Text: RB400D SOT-23-3L Schottky barrier Diodes + 2. 80¡ À0. 05 1. 60¡ À0. 05 1. 9 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 0. 35 Marking: D3A 2. 92¡ À0. 05 RB400D Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃
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RB400D
OT-23-3L
MARKING D3A
RB400D
D3A marking
D3A DIODE
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Untitled
Abstract: No abstract text available
Text: resistors UR73 current sensing chip resistor EU features • • • • • Very low resistance, high precision reliability Utilization of thick film Low T.C.R. achieved ±100 ppm/°C Marking: Indigo body color with white marking Products with lead-free terminations meet EU RoHS
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UR73D
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PART MARKING D0B
Abstract: MARKING d2b marking diode D2B SY100E404 SY100E404JC SY10E404 SY10E404JC SY10E404JZ
Text: • Differential D and Q ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle skew is critical. Special design techniques were
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SY10/100E404
M9999-032206
PART MARKING D0B
MARKING d2b
marking diode D2B
SY100E404
SY100E404JC
SY10E404
SY10E404JC
SY10E404JZ
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MARKING d2b
Abstract: SY100S318FC SY100S318FCTR SY100S318JC SY100S318JCTR F100K SY100S318 D1C marking
Text: 5-WIDE 5, 4, 4, 4, 2 OA/OAI GATE Micrel, Inc. SY100S318 SY100S318 DESCRIPTION FEATURES • Max. propagation delay of 800ps ■ IEE min. of –55mA ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved noise immunity
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SY100S318
800ps
F100K
24-pin
28-pin
SY100S318
M9999-032206
MARKING d2b
SY100S318FC
SY100S318FCTR
SY100S318JC
SY100S318JCTR
F100K
D1C marking
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d2b 1
Abstract: marking F24
Text: TRIPLE 5-INPUT OR/NOR GATE Micrel, Inc. FEATURES SY100S301 SY100S301 DESCRIPTION • Max. propagation delay of 750ps ■ IEE min. of –25mA ■ Industry standard 100K ECL levels ■ Extended supply voltage option: VEE = –4.2V to –5.5V The SY100S301 is an ultra-fast triple 5-input OR/NOR
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SY100S301
750ps
F100K
24-pin
28-pin
SY100S301
M9999-032206
d2b 1
marking F24
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Untitled
Abstract: No abstract text available
Text: 5-WIDE 5, 4, 4, 4, 2 OA/OAI GATE Micrel, Inc. SY100S318 SY100S318 DESCRIPTION FEATURES • Max. propagation delay of 800ps ■ IEE min. of –55mA ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved noise immunity
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SY100S318
800ps
F100K
28-pin
SY100S318
M9999-042307
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XNOR GATE application
Abstract: E107 SY100E107 SY10E107 SY100E107JC
Text: Micrel, Inc. SY10E107 SY100E107 QUINT 2-INPUT XOR/XNOR GATE SY10E107 SY100E107 DESCRIPTION FEATURES • ■ ■ ■ ■ 600ps max. propagation delay Extended 100E VEE range of –4.2V to –5.5V True and complementary outputs OR/NOR function outputs Fully compatible with Industry standard 10KH,
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SY10E107
SY100E107
600ps
MC10E/100E107
28-pin
SY10/100E107
M9999-032006
XNOR GATE application
E107
SY100E107
SY10E107
SY100E107JC
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F100K
Abstract: SY100S317 SY100S317FC SY100S317FCTR SY100S317JC SY100S317JCTR
Text: TRIPLE 2-WIDE OA/OAI GATE Micrel, Inc. FEATURES SY100S317 SY100S317 DESCRIPTION • Max. propagation delay of 900ps ■ IEE min. of –48mA ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved noise immunity
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SY100S317
900ps
F100K
24-pin
28-pin
SY100S317
M9999-032206
F100K
SY100S317FC
SY100S317FCTR
SY100S317JC
SY100S317JCTR
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MICREL marking
Abstract: D3A marking F100K SY100S318 SY100S318JC SY100S318JCTR Marking D1c
Text: 5-WIDE 5, 4, 4, 4, 2 OA/OAI GATE Micrel, Inc. SY100S318 SY100S318 DESCRIPTION FEATURES • Max. propagation delay of 800ps ■ IEE min. of –55mA ■ Extended supply voltage option: VEE = –4.2V to –5.5V ■ Voltage and temperature compensation for improved noise immunity
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SY100S318
800ps
F100K
28-pin
SY100S318
M9999-042307
MICREL marking
D3A marking
F100K
SY100S318JC
SY100S318JCTR
Marking D1c
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D3A transistor
Abstract: No abstract text available
Text: MC10E404, MC100E404 5 V ECL Quad Differential AND/NAND The MC10E404/100E404 is a 4-bit differential AND/NAND device. The differential operation of the device makes it ideal for pulse shaping applications where duty cycle skew is critical. Special design techniques were incorporated to minimize the skew between the upper
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MC10E404,
MC100E404
MC10E404/100E404
AND8020
AN1404
AN1405
AN1406
AN1503
AN1504
AN1568
D3A transistor
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Untitled
Abstract: No abstract text available
Text: SiC SCHOTTKY DIODE SML05SC06D3A / SML05SC06D3B • VR max = 600V • IF(avg) = 5A • VF(typ) = 1.5V • DLCC3 Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B”/ “E-MELF” Package † No Reverse Recovery No Forward Recovery
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SML05SC06D3A
SML05SC06D3B
SML05SC06D3B
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Untitled
Abstract: No abstract text available
Text: MC74HC153A Dual 4-Input Data Selector/Multiplexer High−Performance Silicon−Gate CMOS The MC74HC153 is identical in pinout to the LS153. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.
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MC74HC153A
MC74HC153
LS153.
HC153
HC253,
HC153AG
TSSOP-16
SOIC-16
MC74HC153A/D
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marking CODE D2B
Abstract: MARKING CODE D3B EP105 MC10EP105 MC10EP105FA MC10EP105FAR2 D3A transistor D3A marking code
Text: MC10EP105 Product Preview Quad 2-Input Differential AND/NAND The MC10EP105 is a 2–input differential AND/NAND gate. Each gate is functionally equivalent to a EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device, the EP105 is ideal for applications requiring the fastest AC performance available.
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MC10EP105
MC10EP105
LVEL05
EP105
190ps
r14525
MC10EP105/D
marking CODE D2B
MARKING CODE D3B
MC10EP105FA
MC10EP105FAR2
D3A transistor
D3A marking code
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Untitled
Abstract: No abstract text available
Text: MC74HC153A Dual 4-Input Data Selector/Multiplexer High−Performance Silicon−Gate CMOS The MC74HC153 is identical in pinout to the LS153. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.
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MC74HC153A
MC74HC153
LS153.
HC153
HC253,
HC153AG
MC74HC153A/D
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EP105
Abstract: MC100EP105 MC10EP105 QFN32 LQFP-32 footprint LQFP32 footprint
Text: MC10EP105, MC100EP105 3.3V / 5V ECL Quad 2−Input Differential AND/NAND Description The MC10/100EP105 is a quad 2−input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device,
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MC10EP105,
MC100EP105
MC10/100EP105
LVEL05
LVEL05
EP105
EP105
LQFP-32
MC10EP105/D
MC100EP105
MC10EP105
QFN32
LQFP-32 footprint
LQFP32 footprint
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Untitled
Abstract: No abstract text available
Text: Filter connectors •370 inch Solder pin angled with threaded lock, mounting bracket and grounding clip Socket connector Plug connector clip for PCB 0 3.1 ±<n, t = 1.6 mm clip for PCB 0 3.1 t a i , t = 1.6 mm Kat 1 i D3A Kat 1 i D4A g 0.25 A -0.76 B • 0.25
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OCR Scan
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angle/111
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301 marking code PNP transistor
Abstract: Marking Y1 ROHM D3A transistor marking D3N marking code D3 SC-74
Text: UMD3N IMD3A Transistor, digitai, dual, NPN and PNP, with 2 resistors Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) packages UM D3N (UMT6) 2.0±Q,2 package marking: UMD3N and IMD3A; D3 1,3±0.1 I 0.65 package contains a PNP
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OCR Scan
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SC-74)
DTA114EKA)
DTC114EKA)
SC-70)
SC-59)
301 marking code PNP transistor
Marking Y1 ROHM
D3A transistor
marking D3N
marking code D3 SC-74
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