Untitled
Abstract: No abstract text available
Text: Charge Pump, 7-Channel Smart LED Driver with I2C Interface ADP8860 TYPICAL OPERATING CIRCUIT FEATURES VALS OPTIONAL PHOTOSENSOR VOUT PHOTOSENSOR 0.1µF D1 D3 VIN D2 E3 D3 D4 E4 D5 D4 0.1µF D7 CMP_IN C4 B4 B3 C3 D6/ CMP_IN2 A3 1µF VOUT A2 VDDIO nRST 1µF
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ADP8860
090408-B
ADP8860ACBZ-R7
ADP8860ACPZ-R71
20-Ball
20-Lead
CB-20-6
CP-20-4
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ADP8860
Abstract: DL17 JESD51-9 MO-220-VGGD-1 ADP8860ACPZ-R7 4558 PIN input id 4558 equivalent photo sensor pin diagram photosensor driver diagram
Text: Charge Pump, 7-Channel Smart LED Driver with I2C Interface ADP8860 FEATURES VALS OPTIONAL PHOTOSENSOR VOUT PHOTOSENSOR 0.1µF D1 D3 VIN D2 E3 D3 D4 E4 D5 D4 B4 B3 C3 D6/ CMP_IN2 A3 1µF 1µF E1 VDDIO SDA A1 ADP8860 C1 C2 VDDIO B1 SCL E2 B2 VDDIO nINT VOUT
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ADP8860
090408-B
ADP8860ACBZ-R7
ADP8860ACPZ-R71
20-Ball
20-Lead
CB-20-6
CP-20-4
ADP8860
DL17
JESD51-9
MO-220-VGGD-1
ADP8860ACPZ-R7
4558 PIN input id
4558 equivalent
photo sensor pin diagram
photosensor driver diagram
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APT0502
Abstract: APTM20TDUM16PG 104-A diode s4 53
Text: APTM20TDUM16PG Triple dual common source MOSFET Power Module D3 G3 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D6 D3 G1 S1/S2 D2 S1 D5 G3 S3/S4 S3 G5 S5/S6 S5 S2 S4 S6 G2 G4 G6 D4 D6 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance
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APTM20TDUM16PG
APT0502
APTM20TDUM16PG
104-A
diode s4 53
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Untitled
Abstract: No abstract text available
Text: Si8956AZ/883 Siliconix Quad NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.1 @ VGS = 10 V 5 0.2 @ VGS = 4.5 V 1 LCCĆ20 S1 S1 G1 D4 D4 3 2 1 20 19 D1 4 18 S4 D1 5 17 S4 G2 6 16 G4 S2 7 15 D3 S2 8 14 D3 9 10 11 12 13 D2
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Si8956AZ/883
LCC20
P36673Rev.
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AE8 diode
Abstract: 4a8 diode diode marking A43 DIODE S6 4aa BV99 aA88 IPB120N06N G
Text: IPB120N06N G IPP120N06N G "%&$!"# Power-Transistor Product Summary Features . V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4; I &/ D4@A8 >= X" /- I9 6 O R >? 4@0B 8=6 B
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IPB120N06N
IPP120N06N
AE8 diode
4a8 diode
diode marking A43
DIODE S6 4aa
BV99
aA88
IPB120N06N G
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IPP050N06NG
Abstract: diode a43 IPB050N06NG
Text: IPP050N06N G IPB050N06N G "%&$!"# Power-Transistor Product Summary Features V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4; D4@A8 >= I9 . I ,&/ X" ( 6 O R >? 4@0B 8=6 B
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IPP050N06N
IPB050N06N
IPP050N06NG
diode a43
IPB050N06NG
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sanken power transistor
Abstract: SJPB-D4
Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPB-D4 Mar. 2008 Schottky Barrier Rectifier General Description Package SJPB-D4B is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications ●DC-DC converters
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Untitled
Abstract: No abstract text available
Text: 350mW Switching Diode FMBD4148A/SE/CC/CA FMBD4148A/SE/CC/CA Data Sheet Mechanical Dimensions Description SOT-23 MARKING: FMBD4148A:5H Dimensions in mm FMBD4148CA :D6 FMBD4148CC :KD5 FMBD4148SE :D4 Maximum Ratings @TA=25C Parameter Symbol Peak Repetitive Peak reverse voltage
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350mW
FMBD4148A/SE/CC/CA
OT-23
FMBD4148A
FMBD4148CA
FMBD4148CC
FMBD4148SE
/150mA
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Untitled
Abstract: No abstract text available
Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPB-D4 Mar. 2008 Schottky Barrier Rectifier General Description Package SJPB-D4B is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications DC-DC converters
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MP7003
Abstract: MP700
Text: MP7003 TOSHIBA Power Module MP7003 1. Maximum Ratings Ta = 25°C Diode Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 600 V Peak one cycle surge forward current (D1, D2, D3, D4) (50 Hz, non-repetitive) IFSM 220 A Forward current
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MP7003
MP7003
MP700
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A12580
Abstract: MP7003 DIODE d2 d8
Text: MP7003 TOSHIBA Power Module MP7003 1. Maximum Ratings Ta = 25°C Diode Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 600 V Peak one cycle surge forward current (D1, D2, D3, D4) (50 Hz, non-repetitive) IFSM 220 A Forward current
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MP7003
A12580
MP7003
DIODE d2 d8
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toshiba power module
Abstract: 20A40
Text: MP7003 TOSHIBA Power Module MP7003 1. Maximum Ratings Ta = 25°C Diode Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 600 V Peak one cycle surge forward current (D1, D2, D3, D4) (50 Hz, non-repetitive) IFSM 220 A Forward current
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MP7003
toshiba power module
20A40
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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1N4148WS
Abstract: No abstract text available
Text: 1N4148WS Data Sheet SOD-323 MARKING: D4 FEATURES Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit Non-Repetitive Peak reverse voltage VRM 100 V 75 V VR RMS 53 V Forward Continuous Current IFM 300 mA Average Rectified Output Current
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1N4148WS
OD-323
150mA
1N4148WS
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YG339C4
Abstract: YG339D4 YG339N4
Text: YG339C4,N4,D4 5A (400V / 5A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2
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YG339C4
13Min
SC-67
YG339C4
YG339N4
YG339D4
YG339D4
YG339N4
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Untitled
Abstract: No abstract text available
Text: YG225C4,N4,D4 10A (400V / 10A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2
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YG225C4
13Min
SC-67
YG225N4
YG225D4
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914B
Abstract: 1N3600 DO-35 1n4147 IR D4-D4 IR diode D4-D4 1N3064 1N4009 1N625 1N914A
Text: NATL S E M ICONO HE D IS C R E T E D I National Semiconductor t.S Q H 3 Q 0031^0 B | g T-OI-OÌ * sr Computer Diodes Glass Package VF V c *rr na Max Teat Cond. Proc. No. 1000 (Note 1) D4 4 (Note 2) D4 20 4 (Note 2) D4 0.72 1.0 5 100 4 (Note 2) D4 20 75 1.0
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1N625
DO-35
1N914
1N914A
1N914B
1N916
914B
1N3600
DO-35
1n4147
IR D4-D4
IR diode D4-D4
1N3064
1N4009
1N625
1N914A
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in4152
Abstract: IR D4-D4
Text: This Computer Diodes continued Surface Mount Diodes LEADLESS G LA SS PACKAGE BV (V) Min FDLL4151 LL-34 75 FDLL 4152 LL-34 40 Its Manufacturer C PF Max trr ns Max Test Cond. Proc. Family 50 4.0 2.0 (Note 2) D4 30 0.8B 20 SeelN4152 4.0 2.0 (Note 2) D4 50 0.88
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T-03-01
in4152
IR D4-D4
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1S920
Abstract: 1n659 diode BA318 1S44 1N461A 1N462A 1N463A 1N659 1N660 1N661
Text: Diode Data NATL SEMICOND DISCRETE D | h e b5013.30 DQ37Q03 D | T -0 1 -0 1 500 25 1.0 100 D2 70 500 60 1.0 100 D2 175 1.0 100 1.0 6.0 300 Note 1 D4 6.0 300 (Note 1) D1 300 (Note 1) D1 8 (Note 2) D4 1N461A DO-35 1N463A 1N659 1N660 DO-35 DO-35 DO-35 200 60
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b5013Â
DQ37Q03
T-01-01
1N461A
DO-35
1N462A
1N463A
1N659
1S920
1n659 diode
BA318
1S44
1N660
1N661
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Notch filter 50Hz 60Hz
Abstract: 50hz notch filter
Text: intei 2912 FAMILY PCM LINE FILTERS Frequency Responee CCITTG712 D3/D4 Idle Channel Noise dBrncO 1:2 2912-3 2912 14 2912-5 2912-6 • Direct Interface to the Intel 29 I0A/2911A PCM Codecs Including Stand-By, Power Down Mode AT&T® D3/D4 Compatible and CCITT G712 Compatible
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CCITTG712
OA/2911
210mW
280mW
18dBrnc
600il
12dBrncO.
0164A
Notch filter 50Hz 60Hz
50hz notch filter
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si8956
Abstract: No abstract text available
Text: T e m ic SÌ8956AZ/883 Siliconix Quad N-Channel Enhancement-Mode MOSFET Product Summary r DS on ( Q ) I d (A) 0.1 @ v GS = 10 V 5 0.2 @ V GS = 4.5 V 1 V d s CV) 20 LCC-20 Sj Si D2 D2 Gj D4 D4 G3 S3 S3 Top View Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
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8956AZ/883
LCC-20
P-36673--Rev.
36673--Rev.
si8956
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J3E diode
Abstract: No abstract text available
Text: Tem ic SÌ8956AZ/883 Siliconix Quad N-Channel Enhancement-Mode MOSFET Product Summary V 'd s V I d « • » S (o n ) ( ß ) (A ) o .l @ V G S = 1 0 V 5 0 .2 @ V G S = 4 .5 V 1 20 L C C -20 Si S i D 2 D 2 G ì D4 D4 G3 S3 S3 Tbp View Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)
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8956AZ/883
P-36673--
P-36673--Rev.
2S4735
J3E diode
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MP7002
Abstract: MP700
Text: TO SH IBA MP7002 TOSHIBA POWER MODULE MP7002 1. M AXIM UM RATINGS Ta = 25°C DIODE CHARACTERISTIC Repetitive Peak Reverse Voltage Peak One Cycle Surge Forward Current (Dl, D2, D3, D4) (50 Hz, Non-Repetitive) Forward Current Junction Temperature Storage Temperature Range
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MP7002
MP7002
MP700
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