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    Untitled

    Abstract: No abstract text available
    Text: D4254-1 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.6.0p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.15G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS


    Original     		D4254-1 Voltage60 PDF

    d2311

    Abstract: D5555
    Text: ’H Y U N D A I ” Y HY52B4 DD-I Series 1 51 ZK x B-bit CM DS SRAM PRELIM INARY DESDHIPTION The HYB2B400-I is a high-speed, low pow er and 524,288 x B-bits CMOS static RAM Fabricated using Hyundai's high perform ance twin tub CMOS process technology. This high reliability process cuuplad with innovative circuit


    OCR Scan     		HY52B4 HYB2B400-I HY52B40D-I HY62B40D-I tem064 45dBfl D42541 D7B51 1DED2-11-MAYB4 HY62B400-I d2311 D5555 PDF