M61527FP
Abstract: INR10 jedec QFP80 D17b
Text: M61527FP 6ch ELECTRONIC VOLUME WITH 10 INPUT SELECTOR REJ03F0036-0100Z Rev.1.0 Sep.19.2003 Feature FUNCTION FEATURE Electric Volume 6 channel independent with High Voltage Transistor. 0 to -99dB/ 1dBstep, -∞dB Input Selector Multi Channel Input Front L/R channel 10 Input Selector.
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M61527FP
REJ03F0036-0100Z
-99dB/
0/-6/-12/-18dB)
M61527FP
INR10
jedec QFP80
D17b
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c2021 transistor
Abstract: transistor c2551 potentiometer 1k D9B diode VHC541 C2021 D9B TRANSISTOR OP209 NPN transistor 2n2222A C2551
Text: SPT AN7852 EVALUATION BOARD SIGNAL PROCESSING TECHNOLOGIES APPLICATION NOTE FEATURES • • • • • • • • APPLICATIONS Dual Channel Analog Input 10-Bit Resolution Up to 20 MSPS Conversion Rate On-Board Clock Drivers On-Board Adjustable References
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AN7852
10-Bit
SPT7852
SPT7852
EB7852
1N5712
2N2222A
OP291
LTC1152
c2021 transistor
transistor c2551
potentiometer 1k
D9B diode
VHC541
C2021
D9B TRANSISTOR
OP209
NPN transistor 2n2222A
C2551
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transistor D9C
Abstract: D9C transistor inr234
Text: M61531FP 6ch Electronic Volume with 10 Input Selectors REJ03F0050-0100Z Preliminary Rev.1.0 Sep.17.2003 Features Functions Features Electric volume Input selector Multi channel input Tone Control 6 channel independent electric volume with high voltage transistor 0 to –99 dB/1 dB step, –∞ dB
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M61531FP
REJ03F0050-0100Z
transistor D9C
D9C transistor
inr234
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D9D TRANSISTOR
Abstract: BEST BASS TREBLE CIRCUIT capacitor 4.7u M61531FP D19c D15C D14D D19D
Text: Preliminary M61531FP 6ch Electronic Volume with 10 Input Selectors REJ03F0050-0110Z Rev.1.1 Jun.01.2004 Features Functions Features Electric volume 6 channel independent electric volume with high voltage transistor 0 to –99 dB/1 dB step, –∞ dB Input selector
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M61531FP
REJ03F0050-0110Z
D9D TRANSISTOR
BEST BASS TREBLE CIRCUIT
capacitor 4.7u
M61531FP
D19c
D15C
D14D
D19D
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Untitled
Abstract: No abstract text available
Text: MC10E167, MC100E167 5V ECL 6-Bit 2:1 MUX-Register The MC10E/100E167 contains six 2:1 multiplexers followed by D flip-flops with single-ended outputs. Input data are selected by the Select control, SEL. The selected data are transferred to the flip-flop outputs by a positive edge on CLK1 or CLK2 or both . A HIGH on
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MC10E167,
MC100E167
MC10E/100E167
AND8020
AN1404
AN1405
AN1406
AN1503
AN1504
AN1568
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D17C
Abstract: transistor D9C D19c D12B D20B D21B transistor D4C D17B D13C D13B
Text: Ycificatioann. ge. AR e h N s I IMs not a firnealsupbject to c L E PRice ; Thitsriic limits a MITSUBISHI SOUND PROCESSORS M61527FP Not parame e som AUDIO SIGNAL PROCESSOR 6ch ELECTRONIC VOLUME WITH 10 INPUT SELECTOR APPLICATION Receiver,AV Amp,Mini Stereo etc.
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M61527FP
-99dB/1dBstep
0/-6/-12/-18dB)
INL10
INR10
D17C
transistor D9C
D19c
D12B
D20B
D21B
transistor D4C
D17B
D13C
D13B
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MC100E167
Abstract: 100E167 MC100E167FN MC100E167FNR2 MC10E167 MC10E167FN MC10E167FNR2
Text: MC10E167, MC100E167 5VĄECL 6ĆBit 2:1 MuxĆRegister The MC10E/100E167 contains six 2:1 multiplexers followed by D flip-flops with single-ended outputs. Input data are selected by the Select control, SEL. The selected data are transferred to the flip-flop
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MC10E167,
MC100E167
MC10E/100E167
MC10E167FN
r14525
MC10E167/D
MC100E167
100E167
MC100E167FN
MC100E167FNR2
MC10E167
MC10E167FN
MC10E167FNR2
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MC100E167
Abstract: MC10E167 MC10E167FN d5b transistor
Text: MC10E167, MC100E167 5V ECL 6-Bit 2:1 MUX-Register Description The MC10E/100E167 contains six 2:1 multiplexers followed by D flip-flops with single-ended outputs. Input data are selected by the Select control, SEL. The selected data are transferred to the flip-flop
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MC10E167,
MC100E167
MC10E/100E167
MC10E167/D
MC100E167
MC10E167
MC10E167FN
d5b transistor
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Untitled
Abstract: No abstract text available
Text: MC10E167, MC100E167 5V ECL 6-Bit 2:1 MUX-Register Description The MC10E/100E167 contains six 2:1 multiplexers followed by D flip-flops with single-ended outputs. Input data are selected by the Select control, SEL. The selected data are transferred to the flip-flop
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MC10E167,
MC100E167
MC10E/100E167
MC10E167/D
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2n2 j100
Abstract: u107 TRANSISTOR c104 AD607 AD712 AD812 AD9066 AD9066AR AD9066JR ADSP-21062
Text: a FEATURES Two Matched ADCs on Single Chip CMOS Compatible I/O Low Power 400 mW Dissipation Single +5 V Supply On-Chip Voltage Reference Self-Biased for AC Coupled Inputs 28-Pin SOIC Package APPLICATIONS Direct Broadcast Satellite (DBS) Receivers QAM Demodulators
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28-Pin
AD9066
AD9066
C2019
28-Lead
2n2 j100
u107
TRANSISTOR c104
AD607
AD712
AD812
AD9066AR
AD9066JR
ADSP-21062
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2n2 j100
Abstract: 2N2866 AD607 BR107 U108
Text: BACK a FEATURES Two Matched ADCs on Single Chip CMOS Compatible I/O Low Power 400 mW Dissipation Single +5 V Supply On-Chip Voltage Reference Self-Biased for AC Coupled Inputs 28-Pin SOIC Package APPLICATIONS Direct Broadcast Satellite (DBS) Receivers QAM Demodulators
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28-Pin
AD9066
AD9066
28-Lead
C2019
2n2 j100
2N2866
AD607
BR107
U108
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mr 4030
Abstract: MC100E167 MC10E167 MC10E167FN
Text: MC10E167, MC100E167 5V ECL 6-Bit 2:1 MUX-Register Description http://onsemi.com The MC10E/100E167 contains six 2:1 multiplexers followed by D flip-flops with single-ended outputs. Input data are selected by the Select control, SEL. The selected data are transferred to the flip-flop
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MC10E167,
MC100E167
MC10E/100E167
MC10E167/D
mr 4030
MC100E167
MC10E167
MC10E167FN
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D9D TRANSISTOR
Abstract: M61540FP d11c diode D14D diode d15c
Text: Preliminary M61540FP 6ch Electronic Volume with 5 Input Selector REJ03F0117-0100Z Rev.1.0 May.31.2004 Description M61540FP is an audio signal processor for home audio. This IC contains 6 channel electronic volume, gain control, input selector and 2 band tone control.
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M61540FP
REJ03F0117-0100Z
M61540FP
99dB/1dBstep,
D9D TRANSISTOR
d11c diode
D14D
diode d15c
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d5b transistor
Abstract: No abstract text available
Text: HCD-5B Product Details Military/Ae rospace High Pe rform an ce Re lays Previous 1 . [16] 17 18 19 20 Next Not EU RoHS or ELV Compliant Quick Links Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products Contact Us About This Product
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500Hz
d5b transistor
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Untitled
Abstract: No abstract text available
Text: HSD-5B Product Details Military/Ae rospace High Pe rform an ce Re lays Previous 1 . [16] 17 18 19 20 Next Not EU RoHS or ELV Compliant Quick Links Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products Contact Us About This Product
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500Hz
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d11c diode
Abstract: M61527FP
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: MC10E155, MC100E155 5V ECL 6−Bit 2:1 Mux−Latch The MC10E/100E155 contains six 2:1 multiplexers followed by transparent latches with single−ended outputs. When both Latch Enables LEN1, LEN2 are LOW, the latch is transparent, and output data is controlled by the multiplexer select control, SEL. A logic
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MC10E155,
MC100E155
MC10E/100E155
AND8020
AN1404
AN1405
AN1406
AN1503
AN1504
AN1568
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Untitled
Abstract: No abstract text available
Text: 0Q247fll D5b B A P X Philips Semiconductors N AUER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION Product specification b?E ]> S BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with double emitter bonding.
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0Q247fll
BFG17A
OT143.
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transistor smd zG
Abstract: npn smd zg smd transistor 513 BFG17 BFG17A smd jpS SMD transistor ZG
Text: „. e . . . • P hilips Sem iconductors DDEM7S1 D5b BIAPX N AUER PHIL I P S / D I S C R E T E P roduct specification L7E D NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with
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BFG17A
OT143.
transistor smd zG
npn smd zg
smd transistor 513
BFG17
BFG17A
smd jpS
SMD transistor ZG
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Untitled
Abstract: No abstract text available
Text: • 1^53=131 QDESSSti 283 H A P X Philips Semiconductors Product specification ANER PHILIPS /DISC RE TE b?E NPN 1 GHz wideband transistor DESCRIPTION BFS17 e PINNING NPN transistor In a plastic SOT23 envelope. It is intended for a wide range of RF applications, such as mixers and
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BFS17
MEA393
MEA397
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Untitled
Abstract: No abstract text available
Text: m u m ex KS621K40 Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S ítig lB D U rH n Q tO fl Transistor Module 400 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power
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KS621K40
Amperes/1000
72T4b21
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 50 C SIPMOS Power Transistor • N channel • Enhancement mode Type Yds b flDS on Package Ordering Code BUZ 50 C 1000 V 2.3 A 6Q TO-220 AB C67078-A1307-A5 Maximum Ratings Parameter Symbol Drain source voltage Vt)S Drain-gate voltage ^DGR Values
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O-220
C67078-A1307-A5
bridJJ40
235b05
fl235bG5
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Untitled
Abstract: No abstract text available
Text: 7#. / = ^ 7 S G S - T H O M S O N M » ilL liC T M ] ( g § _ S D 1565 RF & MICROWAVE TRANSISTORS _UHF PULSED APPLICATIONS . 500 WATTS @ 250|iSec PULSE WIDTH, 10% DUTY CYCLE . REFRACTORY GOLD METALLIZATION > EMITTER BALLASTING AND LOW
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SD1565
SD1565
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SGSF664
Abstract: NPN Transistor 450v 1A 100khz 5v transistor npn 6AN1 NPN Transistor 1A metal switching
Text: SGS-THOMSON SGSF664 FASTSWITCH HOLLOW-EMITTER NPN TRANSISTOR • H IG H S W IT C H IN G S P E E D N P N P O W E R TRANSISTOR ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA TIONS ■ 50kHz SW ITCHING SPEED ■ LOW COST DRIVE CIRCUITS
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SGSF664
50kHz
7T5T237
SGSF664
NPN Transistor 450v 1A
100khz 5v transistor npn
6AN1
NPN Transistor 1A metal switching
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