TCD2914BFG
Abstract: TCD2914 Toshiba CCD LINEAR IMAGE SENSOR 1200dpi ccd Linear Sensor 10680 22-pin 1200DPI Toshiba CCD LINEAR 1200dpi d80 DIODE ee-3310 D74 2a d79 DIODE
Text: TCD2914BFG Preliminary TOSHIBA CCD Linear Image Sensor CCD charge coupled device TCD2914BFG The TCD2914BFG is a high sensitive and low dark current 10680 elements x 3 line CCD color image sensor with 10680 elements × 1 line CCD B/W image sensor. The sensor is designed
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TCD2914BFG
TCD2914BFG
TCD2914
Toshiba CCD LINEAR IMAGE SENSOR 1200dpi
ccd Linear Sensor 10680 22-pin
1200DPI
Toshiba CCD LINEAR 1200dpi
d80 DIODE
ee-3310
D74 2a
d79 DIODE
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TCD2957BFG
Abstract: Toshiba CCD LINEAR IMAGE SENSOR 1200dpi 1151a1 toshiba ccd application note tcd295 diagram of diode 1a2 tcd2957 1200DPI S-21360 CM500S
Text: TCD2957BFG TOSHIBA CCD Linear Image Sensor CCD charge coupled device TCD2957BFG x ! # ! " " # $ $ , $$ " $$ ." $ ! %!! & ' -. / $ × ()* +' /$ Features )! 1 • ( 1 • 5 ( • ) • ( Weight: 2.0 g (typ.) × ! µ! -. 4" µ! " 36 µ! (0 $ + .3 ' µ! &4
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TCD2957BFG
TCD2957BFG
Toshiba CCD LINEAR IMAGE SENSOR 1200dpi
1151a1
toshiba ccd application note
tcd295
diagram of diode 1a2
tcd2957
1200DPI
S-21360
CM500S
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TCD2558DG
Abstract: TCD2558DG-1 2SC1815-Y Photodiode-Array 64-element CM500S S2610 S5340 CCD linear image sensor 22-pin scanner D73 -Y 700-nm LED bare chip
Text: TCD2558DG-1 TOSHIBA CCD Linear Image Sensor CCD charge coupled device TCD2558DG-1 The TCD2558DG-1 is a high sensitive and low dark current 5340 elements x 3 line CCD color image sensor which includes CCD drive circuit, clamp circuit. The sensor is designed for scanner. The device contains a row of
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TCD2558DG-1
TCD2558DG-1
TCD2558DG
2SC1815-Y
Photodiode-Array 64-element
CM500S
S2610
S5340
CCD linear image sensor 22-pin scanner
D73 -Y
700-nm LED bare chip
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7272
Abstract: MEB00806 m4 diode bridge module
Text: MEB00806 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Three-Phase Diode Bridge Module 60 Amperes/800 Volts A D J L P - DIA. (2 TYP.) G Q - M4 THD. (5 TYP.) K C M H H B N F E MEB00806 Three-Phase Diode Bridge Module 60 Amperes/800 Volts
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MEB00806
Amperes/800
7272
MEB00806
m4 diode
bridge module
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marking d88 sot23
Abstract: BAT54SFILM d73 sot23-6 D77 sot BAT54 BAT54AFILM BAT54CFILM BAT54FILM BAT54JFILM BAT54KFILM
Text: BAT54 Series Small signal Schottky diodes Main product characteristics IF 300 mA VRRM 40 V C typ 7 pF Tj (max) 150° C BAT54ZFILM (Single) SOD-123 BAT54JFILM (Single) SOD-323 Features and benefits • Low conduction and reverse losses ■ Negligible switching losses
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BAT54
BAT54ZFILM
OD-123
BAT54JFILM
OD-323
BAT54KFILM
OD-523
BAT54FILM
OT-23
BAT54AFILM
marking d88 sot23
BAT54SFILM
d73 sot23-6
D77 sot
BAT54AFILM
BAT54CFILM
BAT54FILM
BAT54JFILM
BAT54KFILM
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D73 -Y
Abstract: D7612
Text: TCD2905D Preliminary TOSHIBA CCD Image Sensor CCD charge coupled device TCD2905D The TCD2905D is a high sensitive and low dark current 5400 elements x 6 line CCD color image sensor which includes CCD drive circuit and clamp circuit. The sensor is designed for
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TCD2905D
TCD2905D
D73 -Y
D7612
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Photodiode-Array 64-element
Abstract: 2SC1815-Y S107 D73 -Y "Analog Shift Register" 12 line ccd scanner 2SC1815 DATASHEET Photodiode-Array CCD DX CCD-Sensor
Text: TCD2905D TOSHIBA CCD Image Sensor CCD charge coupled device TCD2905D The TCD2905D is a high sensitive and low dark current 5400 elements x 6 line CCD color image sensor which includes CCD drive circuit and clamp circuit. The sensor is designed for scanner.
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TCD2905D
TCD2905D
Photodiode-Array 64-element
2SC1815-Y
S107
D73 -Y
"Analog Shift Register"
12 line ccd scanner
2SC1815 DATASHEET
Photodiode-Array
CCD DX
CCD-Sensor
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SH-1A diode
Abstract: D73 -Y D74 DIODE 2SC1815-Y CM500S TC74HC04AP TCD2905D "analog shift register" toshiba 2SC1815-Y TCD29
Text: TCD2905D TOSHIBA CCD Image Sensor CCD charge coupled device TCD2905D The TCD2905D is a high sensitive and low dark current 5400 elements x 6 line CCD color image sensor which includes CCD drive circuit and clamp circuit. The sensor is designed for scanner.
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TCD2905D
TCD2905D
SH-1A diode
D73 -Y
D74 DIODE
2SC1815-Y
CM500S
TC74HC04AP
"analog shift register"
toshiba 2SC1815-Y
TCD29
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D74 DIODE
Abstract: MEB00806 diode 009 7272 three phase ups diode bridge AC TO DC DIODE BRIDGE UPS-15
Text: MEB00806 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Three-Phase Diode Bridge Module 60 Amperes/800 Volts A D J L P - DIA. (2 TYP.) G Q - M4 THD. (5 TYP.) K C M H H B N F E MEB00806 Three-Phase Diode Bridge Module 60 Amperes/800 Volts
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MEB00806
Amperes/800
D74 DIODE
MEB00806
diode 009
7272
three phase ups
diode bridge
AC TO DC DIODE BRIDGE
UPS-15
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BAT54J
Abstract: marking d87 marking d88 sot23 BAT54SFILM BAT54ZFILM BAT54AFILM BAT54SWFILM D77 sot BAT54CFILM BAT54FILM
Text: BAT54 Series Small signal Schottky diodes Main product characteristics IF 300 mA VRRM 40 V C typ 7 pF Tj (max) 150° C BAT54ZFILM (Single) SOD-123 BAT54JFILM (Single) SOD-323 Features and benefits • Low conduction and reverse losses ■ Negligible switching losses
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BAT54
BAT54ZFILM
OD-123
BAT54JFILM
OD-323
BAT54KFILM
OD-523
BAT54FILM
OT-23
BAT54AFILM
BAT54J
marking d87
marking d88 sot23
BAT54SFILM
BAT54ZFILM
BAT54AFILM
BAT54SWFILM
D77 sot
BAT54CFILM
BAT54FILM
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Diode T3 D46
Abstract: CM500S TCD2905CF 12 line ccd staggered scanner
Text: TCD2905CF Preliminary TOSHIBA CCD Image Sensor CCD charge coupled device TCD2905CF The TCD2905CF is a high sensitive and low dark current 5400 elements x 6 line CCD color image sensor which includes CCD drive circuit and clamp circuit. The sensor is designed for
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TCD2905CF
TCD2905CF
Diode T3 D46
CM500S
12 line ccd staggered scanner
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L10C11
Abstract: L10C11CC15 L10C11CC20 L10C11CC25 L10C11PC15 L10C11PC20 L10C11PC25 TMC2011 l30 diode smd
Text: L10C11 L10C11 DEVICES INCORPORATED 4/8-bit Variable Length Shift Register 4/8-bit Variable Length Shift Register DEVICES INCORPORATED FEATURES DESCRIPTION ❑ Variable Length 4 or 8-bit Wide Shift Register ❑ Selectable Delay Length from 3 to 18 Stages ❑ Low Power CMOS Technology
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L10C11
TMC2011
MIL-STD-883,
24-pin
28-pin
L10C11
L10C11CC15
L10C11CC20
L10C11CC25
L10C11PC15
L10C11PC20
L10C11PC25
TMC2011
l30 diode smd
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TCD2913BFG
Abstract: ee-3310 12 line ccd staggered scanner 9 ELEMENT photoDIODE ARRAY D15-D9 toshiba ccd bfg Photodiode-Array 64-element TCD29 Ultrasonic cleaner circuit diagram toshiba tcd ccd
Text: TCD2913BFG TOSHIBA CCD Image Sensor CCD charge coupled device TCD2913BFG The TCD2913BFG is a high sensitive and low dark current 5400 elements x 8 line CCD color image sensor which includes CCD drive circuit and clamp circuit. The sensor is designed for
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TCD2913BFG
TCD2913BFG
ee-3310
12 line ccd staggered scanner
9 ELEMENT photoDIODE ARRAY
D15-D9
toshiba ccd bfg
Photodiode-Array 64-element
TCD29
Ultrasonic cleaner circuit diagram
toshiba tcd ccd
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DARLINGTON TRANSISTOR ARRAYS pu1501
Abstract: PU1501 PU4471 pu1601 PU4135 PU7000 PU3127 pu4126 PU4128 PU7456
Text: Transistors Selection Guide by Applications and Functions I Power Transistor Arrays Series Name PU3000 Series Equivalent Circuit Package (No.) PU4000 Series 8 Pin -SIP Package (D72) (D73) Equivalent Circuit ^ ^ " \S tr u c tu r e PUA3000 Series I 10 Pin *S IP Package (D74)
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PU3000
PUA3000
PU4000
PU3110
PU3210
PU4110
PU4210
PU4410
PU4510
PU4310
DARLINGTON TRANSISTOR ARRAYS pu1501
PU1501
PU4471
pu1601
PU4135
PU7000
PU3127
pu4126
PU4128
PU7456
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Untitled
Abstract: No abstract text available
Text: Light Emitting Diodes 1 6 X 1 6 Dot Matrix Unit LUM-2563ML304 The LUM-2563ML304 is a 16 X 16 dot •E x te rn a l dimensions Unit: mm matrix display which can be used in a wide range of applications, including alphabet, numeric, symbol and graph ical displays. A large d isplay can be
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LUM-2563ML304
LUM-2563ML304
0Dlb477
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Untitled
Abstract: No abstract text available
Text: MEB00806 Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 ThrBG~Ph3SB Diode Bridge Module 60 Amperes/800 Volts Description: MEB00806 Three-Phase Diode Bridge Module 60 Amperes/800 Volts Powerex Three-Phase Diode Bridge Modules are designed for
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MEB00806
Amperes/800
72TMb21
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smd diode L30
Abstract: l30 diode smd SMD L30
Text: L 1 0 C 11 4/8-bit Variable Length Shift Register D E V IC E S IN C O R P O R A T E D FEATURES DESCRIPTION □ Variable Length 4 or 8-bit Wide Shift Register □ Selectable Delay Length from 3 to 18 Stages □ Low Power CMOS Technology □ □ □ □ □
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L10C11
TMC2011
MIL-STD-883,
24-pin
28-pin
L10C11CM25
smd diode L30
l30 diode smd
SMD L30
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powerex MEB0
Abstract: No abstract text available
Text: « — M EB00806 — P iw erex, Inc., 200 Hillls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 T h tß e -P h a S B Diode Bridge Module 60 Amperes/800 Volts Description: MEB00806 Three-Phase Diode Bridge Module 60 Amperes/800 Volts Powerex Three-Phase Diode
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EB00806
Amperes/800
MEB00806
EB00806
1Amperes/800
powerex MEB0
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ERC20M-06
Abstract: YG911S2 ERC20M-04 ERD74-02 ERD74-04 ERC20-02 ERC20-04 ERC20-06 ERC20-08 ERC20M-02
Text: Fast Recovery Diodes Single package Ratings and characteristics Mass Dim ensions G ram s Fig. No. Fig. 1 Fig. 3 °C KS926S2 200 5 Tc=106°C 70 -40 to +150 0.95 (I f=5A) 0.1 0.035 * 4 10.0 0.6 ERC90-02 200 5 (Tc=125°C) 50 -40 t o +150 0.95 (I f=5A) 0.1 0.035 * 4
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KS926S2
ERC90-02
ERC90M-02
ERC90M-03
YG911S2
ERC20-02
O-22QF17
O-22QF15
ERC20M-06
ERC20M-04
ERD74-02
ERD74-04
ERC20-04
ERC20-06
ERC20-08
ERC20M-02
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Y33DA
Abstract: No abstract text available
Text: L10C11 4/8-bit Variable Length Shift Register □ Variable Length 4 or 8-bit Wide Shift Register □ Selectable Delay Length from 3 to 18 Stages □ Low Power CMOS Technology □ Replaces TRW /Raytheon TMC2011 □ Load, Shift, and Hold Instructions □ Separate Data In and Data Out Pins
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PDF
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L10C11
TMC2011
MIL-STD-883,
24-pin
28-pin
L10C11
L10C11CM
Y33DA
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BAT54J
Abstract: No abstract text available
Text: BAT54J / W / AW / CW / SW SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS • VERYSM ALLC O N D U C TIO N LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD VOLTAGE DROP ■ SURFACE MOUNT DEVICE BAT54W BAT54AW BAT54CW BAT54SW DESCRIPTION Schottky barrier diodes encapsulated either in
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BAT54J
BAT54W
BAT54AW
BAT54CW
BAT54SW
OT-323
OD-323
OT-323
BAT54J
OD-323
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Untitled
Abstract: No abstract text available
Text: L10C11 D E V IC E S IN C O R P O R A T E D FEATURES q Variable Length 4 or 8-bit Wide Shift Register q Selectable Delay Length from 3 to 18 Stages q Low Power CMOS Technology q Replaces Fairchild TMC2011 q Load, Shift, and Hold Instructions q Separate Data In and Data O ut Pins
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PDF
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L10C11
TMC2011
24-pin
28-pin
L10C11
28-pin
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: uncu L10C11 DEVICES INCORPORATED FEATURES □ Variable Length 4 or 8-bit Wide Shift Register □ Selectable Delay Length from 3 to 18 Stages □ □ □ □ □ □ Low Power CMOS Technology Replaces TRW/RaytheonTMC2011 Load, Shift, and Hold Instructions Separate Data In and Data Out Pins
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PDF
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L10C11
TRW/RaytheonTMC2011
MIL-STD-883,
24-pin
28-pin
L10C11
L10C11JC25
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Untitled
Abstract: No abstract text available
Text: L 1 0 C 1 1 4/8-bit Variable Length Shift Register FEATURES DESCRIPTION □ Variable Length 4 or 8-bit Wide Shift Register □ Selectable Delay Length from 3 to 18 Stages □ Low Power CMOS Technology □ Replaces TRW /Raytheon TMC2011 □ Load, Shift, and Hold Instructions
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OCR Scan
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PDF
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TMC2011
MIL-STD-883,
24-pin
28-pin
L10C11
L10C11JC25
L10C11JC20
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