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    Untitled

    Abstract: No abstract text available
    Text: •H Y U N D A I HY62VB4DD Series 5 1 Z K N B - b il C M O S 5R A M PREUMINAHY DESCRIPTION TVib HYSZV8400 is a high-speBd, law power and 524,ZBfl x B-bits CMOS static RAM fabricated using Hyundai's high perform ance twin tub CMOS pro c b s s technology. The HY52VB400 has a data retention m ode that guarantees


    OCR Scan     		HY62VB4DD HYSZV8400 HY52VB400 HY62VB400 J/12U/150/200ns 040fl4) Z54fl| DSD41 D7B51 1DED3-11-MAYM PDF

    d2311

    Abstract: D5555
    Text: ’H Y U N D A I ” Y HY52B4 DD-I Series 1 51 ZK x B-bit CM DS SRAM PRELIM INARY DESDHIPTION The HYB2B400-I is a high-speed, low pow er and 524,288 x B-bits CMOS static RAM Fabricated using Hyundai's high perform ance twin tub CMOS process technology. This high reliability process cuuplad with innovative circuit


    OCR Scan     		HY52B4 HYB2B400-I HY52B40D-I HY62B40D-I tem064 45dBfl D42541 D7B51 1DED2-11-MAYB4 HY62B400-I d2311 D5555 PDF