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    D9B TRANSISTOR Search Results

    D9B TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D9B TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M61527FP

    Abstract: INR10 jedec QFP80 D17b
    Text: M61527FP 6ch ELECTRONIC VOLUME WITH 10 INPUT SELECTOR REJ03F0036-0100Z Rev.1.0 Sep.19.2003 Feature FUNCTION FEATURE Electric Volume 6 channel independent with High Voltage Transistor. 0 to -99dB/ 1dBstep, -∞dB Input Selector Multi Channel Input Front L/R channel 10 Input Selector.


    Original     		PDF M61527FP REJ03F0036-0100Z -99dB/ 0/-6/-12/-18dB) M61527FP INR10 jedec QFP80 D17b

    AD5301

    Abstract: AD5311 AD5321 D9B TRANSISTOR
    Text: 2.5 V to 5.5 V, 120 A, 2-Wire Interface, Voltage-Output 8-/10-/12-Bit DACs AD5301/AD5311/AD5321 FEATURES GENERAL DESCRIPTION AD5301: buffered voltage output 8-bit DAC AD5311: buffered voltage output 10-bit DAC AD5321: buffered voltage output 12-bit DAC 6-lead SOT-23 and 8-lead MSOP packages


    Original     		PDF 8-/10-/12-Bit AD5301/AD5311/AD5321 AD5301: AD5311: 10-bit AD5321: 12-bit OT-23 AD5301/AD5311/AD5321 8-/10-/12-bit, AD5301 AD5311 AD5321 D9B TRANSISTOR

    2-bit flash adc

    Abstract: 10 bit Flash-ADC pipeline 10-bit Flash-ADC CHA capacitor Series MAX2451 TRANSISTOR S2A MAX1180 MAX1181 MAX1182 MAX1183
    Text: 19-2174; Rev 0; 10/01 Dual 10-Bit, 20Msps, +3V, Low-Power ADC with Internal Reference and Parallel Outputs ♦ Single +3V Operation ♦ Excellent Dynamic Performance: 59.5dB SNR at fIN = 7.5MHz 74dB SFDR at fIN = 7.5MHz ♦ Low Power: 35mA Normal Operation


    Original     		PDF 10-Bit, 20Msps, 400MHz 48-Pin MAX1184ECM MAX1184 2-bit flash adc 10 bit Flash-ADC pipeline 10-bit Flash-ADC CHA capacitor Series MAX2451 TRANSISTOR S2A MAX1180 MAX1181 MAX1182 MAX1183

    MAX1180

    Abstract: MAX1180ECM MAX1181 MAX1182 MAX1183 MAX1184 MAX1185 MAX2451 MAX4108
    Text: 19-2097; Rev 0; 7/01 Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC with Internal Reference and Parallel Outputs Applications High Resolution Imaging I/Q Channel Digitization Multichannel IF Undersampling Instrumentation Features ♦ Single +3.3V Operation ♦ Excellent Dynamic Performance:


    Original     		PDF 10-Bit, 105Msps, 20MHz 202MHz 100MHz 125mA 400MHz, 48-Pin MAX1180 MAX1180ECM MAX1181 MAX1182 MAX1183 MAX1184 MAX1185 MAX2451 MAX4108

    10-bit Flash-ADC

    Abstract: MAX11811 TRANSISTOR S2A MAX1184 MAX1185 MAX4108 MAX1180 MAX1181 MAX1181ECM MAX1182
    Text: 19-2093; Rev 0; 7/01 Dual 10-Bit, 80Msps, +3V, Low-Power ADC with Internal Reference and Parallel Outputs Applications High Resolution Imaging I/Q Channel Digitization Multichannel IF Undersampling Instrumentation Features ♦ Single +3V Operation ♦ Excellent Dynamic Performance:


    Original     		PDF 10-Bit, 80Msps, 20MHz 400MHz, 48-Pin MAX1181 10-bit Flash-ADC MAX11811 TRANSISTOR S2A MAX1184 MAX1185 MAX4108 MAX1180 MAX1181 MAX1181ECM MAX1182

    MAX1180

    Abstract: MAX1181 MAX1182 MAX1183 MAX1184 MAX1184ECM MAX1185 MAX2451 MAX4108
    Text: 19-2174; Rev 0; 10/01 Dual 10-Bit, 20Msps, +3V, Low-Power ADC with Internal Reference and Parallel Outputs Applications High Resolution Imaging I/Q Channel Digitization Multchannel IF Undersampling Instrumentation ♦ Single +3V Operation ♦ Excellent Dynamic Performance:


    Original     		PDF 10-Bit, 20Msps, 400MHz 48-Pin MAX1184 MAX1180 MAX1181 MAX1182 MAX1183 MAX1184 MAX1184ECM MAX1185 MAX2451 MAX4108

    AD5301

    Abstract: AD5311 AD5321 AD5301BRMZ dab circuitry is150a D00927-0-3 D8B SOT23-6
    Text: 2.5 V to 5.5 V, 120 A, 2-Wire Interface, Voltage-Output 8-/10-/12-Bit DACs AD5301/AD5311/AD5321 FEATURES GENERAL DESCRIPTION AD5301: buffered voltage output 8-bit DAC AD5311: buffered voltage output 10-bit DAC AD5321: buffered voltage output 12-bit DAC 6-lead SOT-23 and 8-lead MSOP packages


    Original     		PDF 8-/10-/12-Bit AD5301/AD5311/AD5321 AD5301: AD5311: 10-bit AD5321: 12-bit OT-23 AD5301/AD5311/AD53211 8-/10-/12-bit, AD5301 AD5311 AD5321 AD5301BRMZ dab circuitry is150a D00927-0-3 D8B SOT23-6

    2-bit flash adc

    Abstract: MAX1180 MAX1181 MAX1182 MAX1182ECM MAX1183 MAX1184 MAX1185 MAX2451 MAX4108
    Text: 19-2094; Rev 0; 7/01 Dual 10-Bit, 65Msps, +3V, Low-Power ADC with Internal Reference and Parallel Outputs ♦ Single +3V Operation ♦ Excellent Dynamic Performance: 59dB SNR at fIN = 20MHz 77dB SFDR at fIN = 20MHz ♦ Low Power: 65mA Normal Operation 2.8mA (Sleep Mode)


    Original     		PDF 10-Bit, 65Msps, 20MHz 400MHz 48-Pin MAX1182ECM MAX1182 2-bit flash adc MAX1180 MAX1181 MAX1182 MAX1182ECM MAX1183 MAX1184 MAX1185 MAX2451 MAX4108

    D9B diode

    Abstract: Diode D9B TS83102GOB
    Text: Features • • • • • • • • • • • • • • • • • • • 10-bit Resolution 2 Gsps Sampling Rate Power Consumption: 4.6W 500 mVpp Differential 100Ω or Single-ended 50Ω ± 2 % Analog Inputs Differential 100Ω or Single-ended 50Ω ECL Compatible Clock Inputs


    Original     		PDF 10-bit 2101AS-BDC-06/03 D9B diode Diode D9B TS83102GOB

    MAX1180

    Abstract: MAX1181 MAX1182 MAX1182ECM MAX1183 MAX1184 MAX1185 MAX2451 MAX4108
    Text: 19-2094; Rev 0; 7/01 Dual 10-Bit, 65Msps, +3V, Low-Power ADC with Internal Reference and Parallel Outputs Applications High Resolution Imaging I/Q Channel Digitization Multchannel IF Undersampling Instrumentation ♦ Single +3V Operation ♦ Excellent Dynamic Performance:


    Original     		PDF 10-Bit, 65Msps, 20MHz 400MHz 48-Pin MAX1182 MAX1180 MAX1181 MAX1182 MAX1182ECM MAX1183 MAX1184 MAX1185 MAX2451 MAX4108

    MAX2451

    Abstract: MAX1180 MAX1181 MAX1182 MAX1183 MAX1183ECM MAX1184 MAX4108
    Text: 19-2173; Rev 0; 9/01 Dual 10-Bit, 40Msps, +3V, Low-Power ADC with Internal Reference and Parallel Outputs Functional Diagram appears at end of data sheet. ♦ On-Chip +2.048V Precision Bandgap Reference ♦ User-Selectable Output Format—Two’s Complement or Offset Binary


    Original     		PDF 10-Bit, 40Msps, 48-Pin MAX1183ECM MAX1183 MAX2451 MAX1180 MAX1181 MAX1182 MAX1183 MAX1183ECM MAX1184 MAX4108

    200849

    Abstract: No abstract text available
    Text: 19-2097; Rev 0; 7/01 Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC with Internal Reference and Parallel Outputs Features ♦ Single +3.3V Operation ♦ Excellent Dynamic Performance: 58.5dB SNR at fIN = 20MHz 72dB SFDR at fIN = 20MHz ♦ SNR Flat within 1dB for fIN = 202MHz to 100MHz


    Original     		PDF 10-Bit, 105Msps, MAX1180 413mW, 20MHz 105Msps. 400MHz 200849

    c2021 transistor

    Abstract: transistor c2551 potentiometer 1k D9B diode VHC541 C2021 D9B TRANSISTOR OP209 NPN transistor 2n2222A C2551
    Text: SPT AN7852 EVALUATION BOARD SIGNAL PROCESSING TECHNOLOGIES APPLICATION NOTE FEATURES • • • • • • • • APPLICATIONS Dual Channel Analog Input 10-Bit Resolution Up to 20 MSPS Conversion Rate On-Board Clock Drivers On-Board Adjustable References


    Original     		PDF AN7852 10-Bit SPT7852 SPT7852 EB7852 1N5712 2N2222A OP291 LTC1152 c2021 transistor transistor c2551 potentiometer 1k D9B diode VHC541 C2021 D9B TRANSISTOR OP209 NPN transistor 2n2222A C2551

    MAX11811

    Abstract: MAX1180 MAX1181 MAX1181ECM MAX1182 MAX1183 MAX1184 MAX1185 MAX4108 83.333MHz oscillator
    Text: 19-2093; Rev 0; 7/01 Dual 10-Bit, 80Msps, +3V, Low-Power ADC with Internal Reference and Parallel Outputs Applications High Resolution Imaging I/Q Channel Digitization Multichannel IF Undersampling Instrumentation Features ♦ Single +3V Operation ♦ Excellent Dynamic Performance:


    Original     		PDF 10-Bit, 80Msps, 20MHz 400MHz, 48-Pin MAX1181 MAX11811 MAX1180 MAX1181 MAX1181ECM MAX1182 MAX1183 MAX1184 MAX1185 MAX4108 83.333MHz oscillator

    MAX1180

    Abstract: MAX1184 MAX1190 MAX1190ECM MAX1195 MAX1198 MAX4108
    Text: 19-2524; Rev 0; 7/02 Dual 10-Bit, 120Msps, 3.3V, Low-Power ADC with Internal Reference and Parallel Outputs For lower speed, pin-compatible, 8-bit versions of the MAX1190, refer to the MAX1195–MAX1198 data sheets. Applications Baseband I/Q Sampling Multichannel IF Sampling


    Original     		PDF 10-Bit, 120Msps, MAX1190, MAX1195 MAX1198 10-Bit MAX1190ECM MAX1190 MAX1180 MAX1184 MAX1190 MAX1190ECM MAX4108

    transistor D9C

    Abstract: D9C transistor inr234
    Text: M61531FP 6ch Electronic Volume with 10 Input Selectors REJ03F0050-0100Z Preliminary Rev.1.0 Sep.17.2003 Features Functions Features Electric volume Input selector Multi channel input Tone Control 6 channel independent electric volume with high voltage transistor 0 to –99 dB/1 dB step, –∞ dB


    Original     		PDF M61531FP REJ03F0050-0100Z transistor D9C D9C transistor inr234

    D9D TRANSISTOR

    Abstract: BEST BASS TREBLE CIRCUIT capacitor 4.7u M61531FP D19c D15C D14D D19D
    Text: Preliminary M61531FP 6ch Electronic Volume with 10 Input Selectors REJ03F0050-0110Z Rev.1.1 Jun.01.2004 Features Functions Features Electric volume 6 channel independent electric volume with high voltage transistor 0 to –99 dB/1 dB step, –∞ dB Input selector


    Original     		PDF M61531FP REJ03F0050-0110Z D9D TRANSISTOR BEST BASS TREBLE CIRCUIT capacitor 4.7u M61531FP D19c D15C D14D D19D

    transistor p98

    Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
    Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC


    Original     		PDF CGH40025F APPNOTE-006 transistor p98 P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57

    D17C

    Abstract: transistor D9C D19c D12B D20B D21B transistor D4C D17B D13C D13B
    Text: Ycificatioann. ge. AR e h N s I IMs not a firnealsupbject to c L E PRice ; Thitsriic limits a MITSUBISHI SOUND PROCESSORS M61527FP Not parame e som AUDIO SIGNAL PROCESSOR 6ch ELECTRONIC VOLUME WITH 10 INPUT SELECTOR APPLICATION Receiver,AV Amp,Mini Stereo etc.


    Original     		PDF M61527FP -99dB/1dBstep 0/-6/-12/-18dB) INL10 INR10 D17C transistor D9C D19c D12B D20B D21B transistor D4C D17B D13C D13B

    transistor r1012

    Abstract: npn smd 2n2222 smd 2DG12 SMD d2b 2n2222 smd DG1 smd transistor SMD D8B SMD diode C715 AN7852 C2559
    Text: AN7852 EVALUATION BOARD APPLICATION NOTE FEATURES CAPABILITIES AND APPLICATIONS • Dual Channel Analog Input • 10-Bit Resolution • Conversion RateUp to 20 MSPS • On-Board Clock Driver • On-Board Adjustable References • Input Buffers With Adjustable Offset Level


    Original     		PDF AN7852 10-Bit SPT7852 10-bit transistor r1012 npn smd 2n2222 smd 2DG12 SMD d2b 2n2222 smd DG1 smd transistor SMD D8B SMD diode C715 AN7852 C2559

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    d11c diode

    Abstract: M61527FP
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    smd code A9 3 pin transistor

    Abstract: smd TRANSISTOR code b6 g10 smd transistor "SMD Code" b14 smd diode ecg manual ic SMD D8B smd transistor g11 smd transistor m6 smd transistor G9
    Text: High Speed Converter Evaluation Platform HSC-ADC-EVALC FEATURES PRODUCT HIGHLIGHTS Xilinx Virtex-4 FPGA-based buffer memory board Used for capturing digital data from high speed ADC evaluation boards to simplify evaluation 64 kB FIFO depth Parallel input at 644 MSPS SDR and 800 MSPS DDR


    Original     		PDF ADP3339AKCZ-3 SKHHAKA010 CBSB-14-01 DPS050300U-P5P-TK ADR512ART ERJ-2GEJ622X ERJ-2GE0R00X ERJ-2GEJ133X ERJ-2GEJ102X ECJ-0EB0J224K smd code A9 3 pin transistor smd TRANSISTOR code b6 g10 smd transistor "SMD Code" b14 smd diode ecg manual ic SMD D8B smd transistor g11 smd transistor m6 smd transistor G9

    GRM42X5R106K10

    Abstract: ecuv1h103kbg 4816P-001-220 ERJ3EKF0R00V ERJ-3EKF0R00V D13B2 DAC5675A D01608C-472 4816P-001 EXBF
    Text: DAC5675A Evaluation Module User’s Guide March 2005 Wireless Infrastructure Products SLAU080A IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		PDF DAC5675A SLAU080A DAC5675 29-Mar-2005 GRM42X5R106K10 ecuv1h103kbg 4816P-001-220 ERJ3EKF0R00V ERJ-3EKF0R00V D13B2 D01608C-472 4816P-001 EXBF