pin diagram of ic 4066
Abstract: ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors
Text: MJ11015, 11016 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain hFE = 1000 Minimum at IC = 20A.
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MJ11015,
MJ11015
MJ11016
pin diagram of ic 4066
ic tc 4066 diagram
MJ11015
darlington complementary 120v
npn darlington transistor 200 watts
MJ11016
MJ11015-11016
11016
Darlington npn 2 amp
60 amp npn darlington power transistors
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NTE251
Abstract: Darlington 40A
Text: NTE251 NPN & NTE252 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.
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NTE251
NTE252
NTE251)
NTE252)
NTE251
Darlington 40A
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QCA30B60
Abstract: QCA30A60 qca30a QCA30B40 QCB30A40 QCB30A60 c2e1
Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max
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QCA30B/QCB30A40/60
E76102
QCA30B
QCB30A
94max
110TAB
32max
31max
35max
QCA30B60
QCA30A60
qca30a
QCA30B40
QCB30A40
QCB30A60
c2e1
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E2 diode
Abstract: Diode B2x
Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1
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QCA30B/QCB30A40/60
E76102
QCA30B
QCB30A
110TAB
94max
32max
31max
35max
400/600V
E2 diode
Diode B2x
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darlington NPN 600V 12a transistor
Abstract: darlington NPN 600V 20a transistor NPN 600V transistor NPN 600V transistor darlington application MJ10023 NPN Transistor 600V MJ10023 NPN POWER DARLINGTON darlington NPN 600V
Text: DATA SHEET MJ10023 NPN SILICON POWER DARLINGTON TRANSISTOR JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJ10023 is a Silicon NPN Power Darlington Transistor, mounted in a hermetically sealed metal case, designed for high voltage, high speed, power applications.
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MJ10023
MJ10023
darlington NPN 600V 12a transistor
darlington NPN 600V 20a transistor
NPN 600V transistor
NPN 600V transistor darlington
application MJ10023
NPN Transistor 600V
NPN POWER DARLINGTON
darlington NPN 600V
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MJ10004
Abstract: MJ-10004 OB 2268 darlington power transistor 10a
Text: MJ10004 Darlington Power Transistor Switchmode series NPN Silicon Power Darlington Transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line
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MJ10004
MJ10004
MJ-10004
OB 2268
darlington power transistor 10a
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BOX53
Abstract: BOW83 NSOU45 PM016K40 BD875 6037Y MPS-U45 MPSU45 Motorola MPSU45 BSS50 SOT
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) Min NPN Darlington Transistors, (Cont'd) 5 10 MPSU45 MPSU45 2S01413 2S0687 2N6037 MJE3300 6037Y SOM3300 SOM3300 SOM3303 Solid Stine Motorola ToshlbaCorp ToshibaCorp
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MPSU45
2S01413
2S0687
2N6037
MJE3300
6037Y
SOM3300
SOM3303
BOX53
BOW83
NSOU45
PM016K40
BD875
MPS-U45
Motorola MPSU45
BSS50 SOT
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MJ1004
Abstract: MJ10004 MJ-10004
Text: 1165904 NPN silicon power darlington transistors with base-emitter speedup diode. The MJ1004 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall tim is critical. They are particularly suited for line operated
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MJ1004
MJ10004
MJ10004
MJ-10004
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QCA100A60
Abstract: transistor 100A QBB100A40 QBB100A60 QCA100A40 IC-100A 6A620
Text: TRANSISTOR MODULE QCA100A/QBB100A40/60 UL;E76102 M QCA100A and QBB100A is a dual Darlington power transistor modules with two high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. QCA100A Series-connected type
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QCA100A/QBB100A40/60
E76102
QCA100A
QBB100A
400/600V
QCA100A40
QCA100A60
QBB100A40
QCA100A60
transistor 100A
QBB100A60
IC-100A
6A620
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vvvf motor
Abstract: 600v 100a servo motors QCA100AA100 QCA100AA120 dc motor control 100A 1000V 20A transistor E76102 transistor 2A
Text: TRANSISTOR MODULE QCA100AA100 UL;E76102 M QCA100AA100 is a dual Darlington power transistor module which has seriesconnected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated
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QCA100AA100
E76102
QCA100AA100
QCA100AA120
vvvf motor
600v 100a
servo motors
QCA100AA120
dc motor control 100A
1000V 20A transistor
transistor 2A
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Untitled
Abstract: No abstract text available
Text: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 MJ10005 FAX: (973) 376-8960 SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode 20 AMPERE NPN SILICON POWER DARLINGTON
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MJ10005
250Vdc,
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darlington NPN 600V 8a transistor
Abstract: npn darlington 400v 10a npn darlington 6A 400V TO218 20A Darlington NTE256 22a ic NPN Transistor 600V npn darlington 400v 1.*a darlington NPN 600V
Text: NTE256 Silicon NPN Transistor Darlington w/Damper Diode Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output
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NTE256
NTE256
darlington NPN 600V 8a transistor
npn darlington 400v 10a
npn darlington 6A 400V
TO218 20A Darlington
22a ic
NPN Transistor 600V
npn darlington 400v 1.*a
darlington NPN 600V
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Darlington NPN 250W
Abstract: MJ10021
Text: MJ10021 T−NPN, Si, Darlington w/Base−Emitter Speedup Diode Description: The MJ10021 is a Darlington transistor in a TO3 type package designed for high−voltage, high− speed, power switching in inductive circuits where fall time is critical. This device is particularly
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MJ10021
MJ10021
Darlington NPN 250W
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150w darlington transistor to3 package
Abstract: NTE97 NPN Transistor 50A 400V NPN DARLINGTON 10A 500V transistor HV
Text: NTE97 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE97 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly
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NTE97
NTE97
150w darlington transistor to3 package
NPN Transistor 50A 400V
NPN DARLINGTON 10A 500V
transistor HV
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TR0011A
Abstract: Motorolla transistor replacement book 400mAdc
Text: PRELIMINARY SFT10000/3 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 20 AMP 350 VOLTS NPN DARLINGTON TRANSISTOR DESIGNER'S DATA SHEET APPLICATION NOTES: SFT10000 Darlington Transistor is direct replacement of Motorolla
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SFT10000/3
SFT10000
10ADC)
10VDC,
30VDC
10ADC,
400mADC)
250VDC
400mADC,
TR0011A
Motorolla transistor replacement book
400mAdc
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Untitled
Abstract: No abstract text available
Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN DARLINGTON POWER TRANSISTOR BDX69 BDX69A BDX69B BDX69C MECHANICAL DATA Dimensions in mm 9.0 max. 26.6 max. 2.5 NPN Darlington transistors for audio
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BDX69
BDX69A
BDX69B
BDX69C
BDX68,
BDX68A,
BDX68B,
BDX68C.
300ns,
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NPN Transistor 50A 400V
Abstract: NTE99 NPN 400V 40A npn darlington 400v 15a
Text: NTE99 Silicon NPN Transistor Darlington w/Base–Emitter Speed–up Diode Description: The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. This device is particularly
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NTE99
NTE99
NPN Transistor 50A 400V
NPN 400V 40A
npn darlington 400v 15a
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Untitled
Abstract: No abstract text available
Text: T64 T65 MAGNA TEC MECHANICAL DATA Dimensions in mm 15.2 max SILICON DARLINGTON POWER TRANSISTORS 4.6 max 14 2.0 4.4 21.0 max 4.25 Dia. 4.15 12.7 max 1 2 3 Complementary epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching
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300ms
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Untitled
Abstract: No abstract text available
Text: , Line. ^£.m.i-Conaa<2toi TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. PNP DARLINGTON POWER TRANSISTOR BDX68 BDX68A BDX68B BDX68C MECHANICAL DATA Dimensions in mm 26.6 max. j.O max 2.5 PNP Darlington transistors for audio
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BDX68
BDX68A
BDX68B
BDX68C
BDX69,
BDX69A,
BDX69B,
BDX69C.
-100V
-120V
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MC7812Ck
Abstract: MC7805CK MC7815CK MC7824CK MC7808CK MC7806CK LM7805k LM7805KC MC7815CK TO3 LM7812KC
Text: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE TEM PERATURE Tc 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range
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PMD10K
16amps,
PMD-13
PMD-11
PMD-17
MC7812Ck
MC7805CK
MC7815CK
MC7824CK
MC7808CK
MC7806CK
LM7805k
LM7805KC
MC7815CK TO3
LM7812KC
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NPN Transistor 2N3055 darlington
Abstract: lambda LAS PMD 1000 stc transistors series 2N3055 4D ic 810 2N3055 series voltage regulator 2N3055 PMD12K40 2N3055-2
Text: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE T E M P E R A T U R E T c 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range
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PMD10K
16amps,
PMD-13
PMD-11
PMD-17
NPN Transistor 2N3055 darlington
lambda LAS
PMD 1000
stc transistors series
2N3055 4D
ic 810
2N3055 series voltage regulator
2N3055
PMD12K40
2N3055-2
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diode j3x
Abstract: D67DE5 D67DE 400-500 D67DE6 D67DE7 D67DE ZN442 k 518
Text: HIGH SPEED NPN POWER DARLINGTON TRANSISTORS The General Electric D67DE is a high current power darlington. It features collector isolation from the heat sink, an internal construction designed for stress-free operation at temperature extremes, hefty screw terminals for emitter and
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D67DE5
D67DE
diode j3x
D67DE 400-500
D67DE6
D67DE7
ZN442
k 518
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TERMINAL M4
Abstract: KS62121KHB TRANSISTOR L 287 A power transistor motor control kd62 powerex ks62
Text: m /m a x KS62121KHB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 High-Beta Single Darlington Transistor Module 1000 Amperes/1200 Volts Description: Powerex High-Beta Single Darlington Transistor Modules are designed for switching applica
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KS62121KHB
Amperes/1200
KD62121KHB
TERMINAL M4
KS62121KHB
TRANSISTOR L 287 A
power transistor motor control
kd62
powerex ks62
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Untitled
Abstract: No abstract text available
Text: lONBSr KS62121KHB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H iQ tl-B G t3 Single Darlington Transistor Module 1000 Amperes/1200 Volts Description: Powerex High-Beta Single Darlington Transistor Modules are designed for switching applica
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KS62121KHB
Amperes/1200
72T4b21
KD62121KHB
peres/1200
72T4b
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