2SB1674
Abstract: 2SD2615
Text: 2SD2615 Transistors For Motor / Relay drive 120V, 6A 2SD2615 zStructure NPN Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 15.0 1.2 1.3 14.0 5.0 zFeatures 1) Darlington connection , high hFE.
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2SD2615
O-220FN
2SB1674
2SB1674
2SD2615
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MJE5740
Abstract: transistor 2n222 2n222 TRANSISTOR 1N493 2N222 2N2905 MJE5742 MR826 OF 2n222
Text: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:
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MJE5740
MJE5742
MJE5740
MJE5742
r14525
MJE5740/D
transistor 2n222
2n222 TRANSISTOR
1N493
2N222
2N2905
MR826
OF 2n222
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ITC117P
Abstract: No abstract text available
Text: ITC117P Integrated Telecom Circuits INTEGRATED CIRCUITS DIVISION Parameter Relay Load Voltage Relay Load Current Relay On-Resistance max Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000
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ITC117P
16-pin
ITC117â
3750Vrms
DS-ITC117P
ITC117P
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MJE5742 equivalent
Abstract: 2n222 TRANSISTOR MJE5742 MJE20 mje5740 2N2905 transistor 1N493
Text: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:
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MJE5740
MJE5742
MJE5742
MJE5742 equivalent
2n222 TRANSISTOR
MJE20
2N2905 transistor
1N493
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2n222 TRANSISTOR
Abstract: transistor 2n222 2n222 1N493 2N2905 MJE5740 MJE5742 MR826 of diode 2n222 MJE20
Text: ON Semiconductort MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:
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MJE5740
MJE5742
MJE5740
MJE5742
r14525
MJE5740/D
2n222 TRANSISTOR
transistor 2n222
2n222
1N493
2N2905
MR826
of diode 2n222
MJE20
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2N6059
Abstract: No abstract text available
Text: 1165895 Silicon NPN power darlington transistor. Features: • • • • • High gain. NPN darlington. High current. High dissipation. Integrated antiparallel collector-emitter diode. Applications: Linear and switching industrial equipment. TO-3 Description:
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2N6059
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transistor w16
Abstract: No abstract text available
Text: ITC117P Integrated Telecom Circuits INTEGRATED CIRCUITS DIVISION Parameter Relay Load Voltage Relay Load Current Relay On-Resistance max Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000
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ITC117P
16-pin
ITC117
E76270
DS-ITC117P-R06
transistor w16
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2N6667
Abstract: 2N6668
Text: ON Semiconductor 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for general−purpose amplifier and low speed switching applications. PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60 −80 VOLTS 65 WATTS • High DC Current Gain —
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2N6667
2N6668
2N6667
2N6668
O-220AB
2N6387,
2N6388
21A-09
O-220AB
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20000 watt schematics power amp
Abstract: 2N6667 1N5825 2N6387 2N6388 2N6668 MSD6100
Text: ON Semiconductort 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for general–purpose amplifier and low speed switching applications. PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60–80 VOLTS 65 WATTS • High DC Current Gain —
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2N6667
2N6668
220AB
2N6387,
2N6388
220AB
r14525
2N6667/D
20000 watt schematics power amp
2N6667
1N5825
2N6387
2N6388
2N6668
MSD6100
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NTE247
Abstract: nte248
Text: NTE247 NPN & NTE248 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.
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NTE247
NTE248
100mA
NTE247
nte248
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2N6668
Abstract: 2N6667 1N5825 2N6387 2N6388 MSD6100
Text: ON Semiconductor 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for general–purpose amplifier and low speed switching applications. PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60–80 VOLTS 65 WATTS • High DC Current Gain —
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2N6667
2N6668
220AB
2N6387,
2N6388
r14525
2N6667/D
2N6668
2N6667
1N5825
2N6387
2N6388
MSD6100
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QCA30B60
Abstract: QCA30A60 qca30a QCA30B40 QCB30A40 QCB30A60 c2e1
Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 (M) QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max
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QCA30B/QCB30A40/60
E76102
QCA30B
QCB30A
94max
110TAB
32max
31max
35max
QCA30B60
QCA30A60
qca30a
QCA30B40
QCB30A40
QCB30A60
c2e1
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2SB1674
Abstract: 2SD2615
Text: 2SB1674 Transistors For Motor / Relay drive −120V, −6A 2SB1674 zStructure PNP Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 15.0 1.2 1.3 14.0 5.0 zFeatures 1) Darlington connection, high hFE.
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2SB1674
-120V,
O-220FN
2SD2615
-120ipment
2SB1674
2SD2615
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E2 diode
Abstract: Diode B2x
Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 (M) QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1
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QCA30B/QCB30A40/60
E76102
QCA30B
QCB30A
110TAB
94max
32max
31max
35max
400/600V
E2 diode
Diode B2x
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Darlington 30A
Abstract: QCA30B60 30A high speed diode QCA30B40 QCB30A40 QCB30A60
Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 M QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. IC 30A, VCEX 400/600V
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QCA30B/QCB30A40/60
E76102
QCA30B
QCB30A
400/600V
QCA30B40
QCA30B60
QCB30A40
QCB30A60
QCA30B40
Darlington 30A
QCA30B60
30A high speed diode
QCB30A60
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QCA150AA100
Abstract: QCA150AA120 24TRANSISTOR E76102
Text: TRANSISTOR MODULE QCA150AA100 UL;E76102 M QCA150AA100 is a dual Darlington power transistor module which has seriesconnected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated
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QCA150AA100
E76102
QCA150AA100
QCA150AA120
QCA150AA120
24TRANSISTOR
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MC7812Ck
Abstract: MC7805CK MC7815CK MC7824CK MC7808CK MC7806CK LM7805k LM7805KC MC7815CK TO3 LM7812KC
Text: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE TEM PERATURE Tc 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range
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PMD10K
16amps,
PMD-13
PMD-11
PMD-17
MC7812Ck
MC7805CK
MC7815CK
MC7824CK
MC7808CK
MC7806CK
LM7805k
LM7805KC
MC7815CK TO3
LM7812KC
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NPN Transistor 2N3055 darlington
Abstract: lambda LAS PMD 1000 stc transistors series 2N3055 4D ic 810 2N3055 series voltage regulator 2N3055 PMD12K40 2N3055-2
Text: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE T E M P E R A T U R E T c 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range
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PMD10K
16amps,
PMD-13
PMD-11
PMD-17
NPN Transistor 2N3055 darlington
lambda LAS
PMD 1000
stc transistors series
2N3055 4D
ic 810
2N3055 series voltage regulator
2N3055
PMD12K40
2N3055-2
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Untitled
Abstract: No abstract text available
Text: i*imi ra@iû gs SCS-THOMSON 2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR . . . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL
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2N6059
2N6059
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Untitled
Abstract: No abstract text available
Text: KSE5740/5741/5742 NPN SILICON DARLINGTON TRANSISTOR HIGH VOLTAGE POWER DARLINGTON TR HIGH VOLTAGE POWER SWITCHING IN INDUCTIVE CIRCUITS • Small Engine Ignition • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Control ABSOLUTE MAXIMUM RATINGS
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KSE5740/5741/5742
KSE5740
KSE5741
KSE5742
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BDV64
Abstract: philips BDV64A bdv64b transistor transistors BDV64B bdv64s BDV64B BDV65 BDV64 C
Text: f BDV64; 64A ; 64C PHILIPS INTERNATIONAL 5bE J> m 711002b 0G43342 3Tb • PHIN T - 3 3 -3 1 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general
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BDV64;
BDV64B;
711002b
T-33-3!
BDV65,
BDV64
7Z7749I-
philips BDV64A
bdv64b transistor
transistors BDV64B
bdv64s
BDV64B
BDV65
BDV64 C
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TCI ignition
Abstract: ignition tci KSE5740/5741/5742
Text: KSE5740/5741/5742 NPN SILICON DARLINGTON TRANSISTOR HIGH VOLTAGE POWER DARLINGTON TR HIGH VOLTAGE POWER SWITCHING IN INDUCTIVE CIRCUITS • • • • • Sm all Engine Ignition Switching Regulators Inverters Solenoid and Relay Drivers Motor Control ABSOLUTE MAXIMUM RATINGS
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KSE5740/5741/5742
KSE5740
KSE5741
KSE5742
TCI ignition
ignition tci
KSE5740/5741/5742
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KD621230
Abstract: D1220 300 volt 5 ampere transistor a 31 diode oas transistors d100
Text: m V E R E X KD621230 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 300 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use
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KD621230
Amperes/1200
D-100
KD621230
D1220
300 volt 5 ampere transistor a 31
diode oas
transistors d100
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KS621K30
Abstract: transistor S56 transistor s55 lem lc 300 KS621 powerex ks62 transistor VCEO 1000V
Text: POWBÌEX KS621K30 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 300 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in
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KS621K30
Amperes/1000
KS621K30
transistor S56
transistor s55
lem lc 300
KS621
powerex ks62
transistor VCEO 1000V
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