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    DARLINGTON ICBO 0.1MA Search Results

    DARLINGTON ICBO 0.1MA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ULS2003H/R Rochester Electronics LLC ULS2003 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    ULS2022R/B Rochester Electronics LLC ULS2022 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    PS2502L-1-A Renesas Electronics Corporation DC Input Darlington, , / Visit Renesas Electronics Corporation
    PS2502L-4-A Renesas Electronics Corporation DC Input Darlington, , / Visit Renesas Electronics Corporation
    PS2502-4-A Renesas Electronics Corporation DC Input Darlington, , / Visit Renesas Electronics Corporation

    DARLINGTON ICBO 0.1MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MPSA75 MPSA76 MPSA77 SILICON PNP DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA75 series devices are silicon PNP Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain.


    Original     		PDF MPSA75 MPSA76 MPSA77 MPSA75 100mA 18-March

    MPSA76

    Abstract: MPSA75 MPSA77 ICES Darlington transistor to 92
    Text: DATA SHEET MPSA75 MPSA76 MPSA77 PNP DARLINGTON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPSA75 series are silicon PNP Darlington Transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain.


    Original     		PDF MPSA75 MPSA76 MPSA77 MPSA75 MPSA76 MPSA77 ICES Darlington transistor to 92

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MPSA75 MPSA76 MPSA77 PNP DARLINGTON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPSA75 series are silicon PNP Darlington Transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain.


    Original     		PDF MPSA75 MPSA76 MPSA77 100mA, 100mA

    Untitled

    Abstract: No abstract text available
    Text: MPSA62 MPSA63 MPSA64 MPSA65 MPSA66 w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA62 series devices are silicon PNP Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain.


    Original     		PDF MPSA62 MPSA63 MPSA64 MPSA65 MPSA66 MPSA62

    NPN Transistor 5V DARLINGTON

    Abstract: Darlington transistor to 92 KSP25 KSP27 KSP26 vce max 100 ic max 100MA NPN "Darlington Transistor"
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP25/26/27 DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: VCES=KSP25: 40V KSP26: 50V KSP27: 60V • Collector Dissipation:PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Symbol Rating


    Original     		PDF KSP25/26/27 KSP25: KSP26: KSP27: 625mW KSP25 KSP26 KSP27 NPN Transistor 5V DARLINGTON Darlington transistor to 92 KSP25 KSP27 KSP26 vce max 100 ic max 100MA NPN "Darlington Transistor"

    IC600

    Abstract: CZT2000
    Text: Transistors SMD Type PNP Silicon Extremely High Voltage Darlington Transistor CZT2000 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1


    Original     		PDF CZT2000 OT-223 160mA, 160mA IC600 CZT2000

    ja smd

    Abstract: CZT127 KZT127
    Text: Transistors IC SMD Type Surface Mount PNP Silicon Power Darlington Transistor KZT127 CZT127 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 Low voltage (max. 100V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 High current (max. 5A). +0.2


    Original     		PDF KZT127 CZT127) OT-223 -30mA -20mA ja smd CZT127 KZT127

    KSP26

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP25/26/27 DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: VCES=KSP25: 40V KSP26: 50V KSP27: 60V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage


    Original     		PDF KSP25/26/27 KSP25: KSP26: KSP27: 625mW KSP25 KSP26 KSP27 KSP26

    smd npn darlington

    Abstract: CZT122 KZT122
    Text: Transistors IC SMD Type Surface Mount NPN Silicon Power Darlington Transistor KZT122 CZT122 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 High current (max. 5A). Low voltage (max. 100V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2


    Original     		PDF KZT122 CZT122) OT-223 smd npn darlington CZT122 KZT122

    "Darlington Transistor"

    Abstract: darlington transistor SOT-23 CMPTA77 CEN1078 PNP POWER TRANSISTOR SOT23 darlington transistor darlington sot23 pnp
    Text: DATA SHEET CEN1078 PNP DARLINGTON TRANSISTOR SOT-23 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CEN1078 is a silicon PNP Darlington Transistor, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain. This device is an enhanced version of the CMPTA77


    Original     		PDF CEN1078 OT-23 CEN1078 CMPTA77 100mA OT-23 "Darlington Transistor" darlington transistor SOT-23 CMPTA77 PNP POWER TRANSISTOR SOT23 darlington transistor darlington sot23 pnp

    KSP13

    Abstract: NPN Transistor 5V DARLINGTON transistor ksp13 "Darlington Transistor" transistor darlington npn Darlington transistor dj005b 625mW npn darlington TO92 ksp-13
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP13/14 DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: VCES=30V • Collector Dissipation:PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage


    Original     		PDF KSP13/14 625mW KSP13 KSP14 KSP13 NPN Transistor 5V DARLINGTON transistor ksp13 "Darlington Transistor" transistor darlington npn Darlington transistor dj005b 625mW npn darlington TO92 ksp-13

    "Darlington Transistor"

    Abstract: CZT250K
    Text: CZT250K SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT250K type is an NPN silicon Darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed


    Original     		PDF CZT250K OT-223 100mA, 100mA 100MHz 01-Feb "Darlington Transistor" CZT250K

    Darlington NPN Silicon Diode

    Abstract: CZT900K
    Text: CZT900K SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT900K type is an NPN silicon Darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed


    Original     		PDF CZT900K OT-223 100mA, 100mA 100MHz 01-Feb Darlington NPN Silicon Diode CZT900K

    darlington sot23 pnp

    Abstract: PNP DARLINGTON SOT-23 CMPTA77 darlington transistor SOT-23 marking code 23 transistor high gain PNP POWER TRANSISTOR "SOT23"
    Text: CMPTA77 SURFACE MOUNT PNP SILICON DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA77 type is a Silicon PNP Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,


    Original     		PDF CMPTA77 OT-23 100mA, 100mA 100MHz 19-March darlington sot23 pnp PNP DARLINGTON SOT-23 CMPTA77 darlington transistor SOT-23 marking code 23 transistor high gain PNP POWER TRANSISTOR "SOT23"

    COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS

    Abstract: 100MHZ NPN TRANSISTORS Darlington Transistors CXTA14 CXTA64 transistors manufactured
    Text: Central CXTA14 NPN CXTA64 PNP TM Semiconductor Corp. SURFACE MOUNT SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CXTA14, CXTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy molded in a


    Original     		PDF CXTA14 CXTA64 CXTA14, OT-89 100mA, 100mA 100MHz 19-December COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS 100MHZ NPN TRANSISTORS Darlington Transistors transistors manufactured

    CMPTA27

    Abstract: marking code NA sot23 vce max 100 ic max 100MA NPN MARKING FG TRANSISTOR
    Text: Central CMPTA27 TM Semiconductor Corp. NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA27 type is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications


    Original     		PDF CMPTA27 CMPTA27 OT-23 100mA, 100mA 100MHz 07-December marking code NA sot23 vce max 100 ic max 100MA NPN MARKING FG TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: CZTA77 SURFACE MOUNT PNP SILICON DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA77 type is a Silicon PNP Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed


    Original     		PDF CZTA77 OT-223 100mA, 100mA 100MHz 14-November

    CXTA27

    Abstract: No abstract text available
    Text: CXTA27 SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXTA27 type is a NPN Silicon Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring


    Original     		PDF CXTA27 CXTA27 OT-89 100mA, 100mA 100MHz 23-February

    Darlington Transistors

    Abstract: No abstract text available
    Text: Central CZTA14 NPN CZTA64 PNP TM Semiconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA14, CZTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy molded in a


    Original     		PDF CZTA14 CZTA64 CZTA14, OT-223 100mA, 100mA 100MHz 26-September Darlington Transistors

    "Darlington Transistor"

    Abstract: CZTA77 15 A PNP POWER TRANSISTOR
    Text: CZTA77 Central TM Semiconductor Corp. SURFACE MOUNT PNP DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA77 type is a Silicon PNP Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed


    Original     		PDF CZTA77 OT-223 100mA, 100mA 100MHz 01-Feb "Darlington Transistor" CZTA77 15 A PNP POWER TRANSISTOR

    marking code fg

    Abstract: transistor marking 020 "Darlington Transistor" BCV47 80 V NPN epitaxial silicon transistor vce max 100 ic max 100MA NPN
    Text: Central BCV47 TM Semiconductor Corp. NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCV47 type is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications


    Original     		PDF BCV47 BCV47 OT-23 100nA 100mA, 100mA 100MHz 07-December marking code fg transistor marking 020 "Darlington Transistor" 80 V NPN epitaxial silicon transistor vce max 100 ic max 100MA NPN

    CZTA77

    Abstract: No abstract text available
    Text: CZTA77 SURFACE MOUNT PNP SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA77 type is a Silicon PNP Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring


    Original     		PDF CZTA77 CZTA77 OT-223 100mA, 100mA 100MHz

    2929 transistor

    Abstract: t2929 MPSA62 MPSA75 T-31-21 vbe 10v T-29-29 625MW
    Text: S A MS UN G SEMICONDUCTOR INC 14E D I 7^4142 0007370 2 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA64 T-29-29 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vcta=30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		PDF mpsa64 625mW MPSA62 T-29-29 100/iA, mpsh17 t-10-fc T-31-21 -100MHz- 2929 transistor t2929 MPSA75 T-31-21 vbe 10v T-29-29 625MW

    2929 transistor

    Abstract: MPSA25 mpsa82 MPSA26 MPSA45 MPSA55 MPSA62 MPSA63 I0204 625MW
    Text: SAMSUNG SEMICONDUCTOR INC MPSA26 14E O 00073SM I NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vc*s=50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Ch aracte ristic


    OCR Scan     		PDF 00073SM MPSA26 T-29-29 625mW MPSA25 MPSA62 100/iA, 100mA, 2929 transistor mpsa82 MPSA45 MPSA55 MPSA63 I0204 625MW