2n222 TRANSISTOR
Abstract: Ferroxcube core MR826 equivalent 1N493 transistor 2n222
Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS
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MJB5742T4G
MJB5742/D
2n222 TRANSISTOR
Ferroxcube core
MR826 equivalent
1N493
transistor 2n222
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1N493
Abstract: transistor 2N222
Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS
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MJB5742T4G
MJB5742/D
1N493
transistor 2N222
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Untitled
Abstract: No abstract text available
Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS
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MJB5742T4G
MJB5742/D
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B5742G
Abstract: high voltage fast switching transistor for ignition coil drivers application of diode 2n222 2n222 TRANSISTOR
Text: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS
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MJB5742T4G
MJB5742/D
B5742G
high voltage fast switching transistor for ignition coil drivers application
of diode 2n222
2n222 TRANSISTOR
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MJE5740
Abstract: MJE5742 MJE-5740 MJE5740G MJE5742G
Text: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features • Pb−Free Packages are Available* POWER DARLINGTON
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MJE5740,
MJE5742
MJE5742
MJE5740
MJE5740
MJE-5740
MJE5740G
MJE5742G
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2SD418
Abstract: TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000 Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,
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MJ10000
204AA
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
2SD418
TIP33C equivalent
k 3436 transistor
IR647
TIP121 transistor
buv18a
BU108
2SC1086
tip122 motor control
2N6023
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MJ10006
Abstract: MJ10007 1N4937 mj10006 equivalent
Text: ON Semiconductort MJ10007 * SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS The MJ10007 Darlington transistor is designed for high–voltage,
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MJ10007
MJ10007
10Nlit
r14525
MJ10007/D
MJ10006
1N4937
mj10006 equivalent
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MJ10005 equivalent
Abstract: MJ10005 transistor mj10005 1N4937 MJ10004
Text: ON Semiconductort MJ10005 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS The MJ10005 Darlington transistor is designed for high–voltage,
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MJ10005
MJ10005
100Nlit
r14525
MJ10005/D
MJ10005 equivalent
transistor mj10005
1N4937
MJ10004
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MJ10016
Abstract: MJ10015 1N4937
Text: ON Semiconductort MJ10015 MJ10016 SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for
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MJ10015
MJ10016
MJ10015
MJ10016
r14525
MJ10015/D
1N4937
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MJ10009
Abstract: 1N4937 2N3762 MTP3055E
Text: ON Semiconductort MJ10009 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high–voltage,
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MJ10009
MJ10009
r14525
MJ10009/D
1N4937
2N3762
MTP3055E
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ITC117PL
Abstract: No abstract text available
Text: ITC117PL Integrated Telecom Circuits INTEGRATED CIRCUITS DIVISION Parameter Relay Blocking Voltage Relay Load Current Relay On-Resistance max Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 20 100 120
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ITC117PL
3750Vrms
16-Pin
DS-ITC117PL
ITC117PL
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mj10016
Abstract: 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent 2sd526 equivalent 2N3773 equivalent MJE371 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage,
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MJ10015
MJ10016
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2sc1173 equivalent Silicon NPN Power Transistors
bd139 equivalent
equivalent of TIP122
mje340 equivalent
BD435/fw26025a1 equivalent
2N6059 equivalent
2sd526 equivalent
2N3773 equivalent
MJE371 equivalent
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Untitled
Abstract: No abstract text available
Text: ITC117PL Integrated Telecom Circuits INTEGRATED CIRCUITS DIVISION Parameter Relay Blocking Voltage Relay Load Current Relay On-Resistance max Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 20 100 120
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ITC117PL
16-pin
ITC117PL
DS-ITC117PL-R03
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ITC117P
Abstract: No abstract text available
Text: ITC117P Integrated Telecom Circuits INTEGRATED CIRCUITS DIVISION Parameter Relay Load Voltage Relay Load Current Relay On-Resistance max Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000
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ITC117P
16-pin
ITC117â
3750Vrms
DS-ITC117P
ITC117P
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ITC137P
Abstract: No abstract text available
Text: ITC137P Integrated Telecom Circuits INTEGRATED CIRCUITS DIVISION Parameter Relay Load Voltage Relay Load Current Relay On-Resistance max Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000
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ITC137P
3750Vrms
16-Pin
DS-ITC137P
ITC137P
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MJ10000
Abstract: MJ10001 1N4937 voltage regulators 6 amp to3
Text: MOTOROLA Order this document by MJ10000/D SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,
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MJ10000/D*
MJ10000/D
MJ10000
MJ10001
1N4937
voltage regulators 6 amp to3
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Untitled
Abstract: No abstract text available
Text: ITC137P Integrated Telecom Circuits INTEGRATED CIRCUITS DIVISION Parameter Relay Load Voltage Relay Load Current Relay On-Resistance max Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000
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ITC137P
16-pin
ITC137
E76270
DS-ITC137P-R05
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Untitled
Abstract: No abstract text available
Text: ITC135P Integrated Telecom Circuits INTEGRATED CIRCUITS DIVISION Parameter Relay Blocking Voltage Relay Load Current Relay On-Resistance max Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000
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ITC135P
16-pin
ITC135
E76270
DS-ITC135P-R05
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transistor w16
Abstract: No abstract text available
Text: ITC117P Integrated Telecom Circuits INTEGRATED CIRCUITS DIVISION Parameter Relay Load Voltage Relay Load Current Relay On-Resistance max Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000
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ITC117P
16-pin
ITC117
E76270
DS-ITC117P-R06
transistor w16
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transistor r02
Abstract: DARLINGTON phototransistor 14 b0107
Text: ITC117PL Integrated Telecom Circuits Parameter Relay Blocking Voltage Relay Load Current Relay Max RON Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 20 100 120 10,000 Units V mA V mA - Features • Current Limiting
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ITC117PL
16-pin
ITC117PL
3750Vrms
DS-ITC117PL-R02
transistor r02
DARLINGTON phototransistor 14
b0107
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Untitled
Abstract: No abstract text available
Text: ITC117PL Integrated Telecom Circuits Parameter Relay Blocking Voltage Relay Load Current Relay Max RON Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 20 100 120 10,000 Units V mA V mA - Features • Current Limiting
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ITC117PL
3750Vrms
16-Pin
DS-ITC117PL-R02
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mj10000
Abstract: MJ10001
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The M J10000 Darlington transistor is designed for high-voltage, high-speed,
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MJ10000
MJ10000
MJ10001
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MC7812Ck
Abstract: MC7805CK MC7815CK MC7824CK MC7808CK MC7806CK LM7805k LM7805KC MC7815CK TO3 LM7812KC
Text: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE TEM PERATURE Tc 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range
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PMD10K
16amps,
PMD-13
PMD-11
PMD-17
MC7812Ck
MC7805CK
MC7815CK
MC7824CK
MC7808CK
MC7806CK
LM7805k
LM7805KC
MC7815CK TO3
LM7812KC
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j10016
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J10015 M J10016 SWITCHMODE Series NPN Silicon Power Darlington TVansistors w ith B ase-Em itter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for high-voltage,
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MJ10015
MJ10016
j10016
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