1N4937
Abstract: MJ10020 MJ10021 AN222A
Text: MOTOROLA Order this document by MJ10020/D SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021 Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS
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204AE
1N4937
MJ10020
MJ10021
AN222A
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP Data Sheet No. BPTD-1500D-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 POWER OVER ETHERNET (PoE) EQUIPMENT PROTECTION 1.5 KP BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR DIODE CELLS MECHANICAL SPECIFICATION
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BPTD-1500D-1A
10/1000mS
10/1000mSTransient
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282oC
Abstract: diode cell "Power over Ethernet"
Text: DIOTEC ELECTRONICS CORP Data Sheet No. BPTD-3000D-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 POWER OVER ETHERNET (PoE) EQUIPMENT PROTECTION 3.0 KP BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR DIODE CELLS MECHANICAL SPECIFICATION
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BPTD-3000D-1A
10/1000mS
10/1000mSTransient
BP3-23
282oC
diode cell
"Power over Ethernet"
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"Power over Ethernet"
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP Data Sheet No. BPTD-6000D-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 POWER OVER ETHERNET (PoE) EQUIPMENT PROTECTION 6.0 KP BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR DIODE CELLS MECHANICAL SPECIFICATION
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BPTD-6000D-1A
10/1000mS
10/1000mSTransient
"Power over Ethernet"
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spot light size photodiode
Abstract: LARGE SURFACE AREA PHOTODIODE filter photodiode bias circuit spot photodiode dl-16-7 DL16-7
Text: DATA SHEET DL16-7PCBA3 DUAL AXIS PSD SUM AND DIFFERENCE AMPLIFIER SPECIFICATION The DL16-7PCBA3 is a 4mm x 4mm dual axis position sensing diode on a PCB with sum and difference amplifiers. It contains internal bias circuitry of 14.3 V* for the position sensing diode,
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DL16-7PCBA3
DL16-7PCBA3
16mm2
DL16-7-CER
spot light size photodiode
LARGE SURFACE AREA PHOTODIODE filter
photodiode bias circuit
spot photodiode
dl-16-7
DL16-7
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4945-2L
Abstract: TLE4945 Hall TLE 4905 diagram induction Q67006-A9120 Q67006-A9112 Q67006-A9143 Q67006-A9163 TLE4905L TLE4935L
Text: Uni- and Bipolar Hall IC Switches for Magnetic Field Applications TLE 4905 L; TLE 4935 L; TLE 4935-2 L; TLE 4945 L; TLE 4945-2L Bipolar IC Features • • • • • • Temperature compensated magnetic performance Digital output signal For unipolar and alternating magnetic fields
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4945-2L
Q67006-A9120
Q67006-A9112
Q67006-A9143
Q67006-A9163
Q62705-K441
35x45°
15max
4945-2L
TLE4945
Hall TLE 4905
diagram induction
Q67006-A9120
Q67006-A9112
Q67006-A9143
Q67006-A9163
TLE4905L
TLE4935L
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reverse-conducting thyristor
Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate
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MCT00,
reverse-conducting thyristor
gto Gate Drive circuit
IGCT thyristor
IGCT mitsubishi
Usha Rectifier
Emitter Turn-Off thyristor
eto thyristor
GTO triac
HEXFET Power MOSFET designer manual
MOS-Controlled Thyristor
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Hallgenerator
Abstract: TRANSISTOR SMD CODE k 89 diagram induction Hall TLE 4905 K405 AEP02150 Q62705-K402 Q62705-K403 Q62705-K404 Q62705-K405
Text: Uni- and Bipolar Hall IC Switches for Magnetic Field Applications TLE 4905 G; TLE 4935 G TLE 4935-2 G; TLE 4945-2 G Bipolar IC Features • • • • • • Temperature compensated magnetic performance Digital output signal For unipolar and alternating magnetic fields
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OT-89
Q62705-K402
Q62705-K404
Q62705-K405
Q62705-K403
Hallgenerator
TRANSISTOR SMD CODE k 89
diagram induction
Hall TLE 4905
K405
AEP02150
Q62705-K402
Q62705-K403
Q62705-K404
Q62705-K405
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L1N06CL
Abstract: L1N06CLE RLP1N06CLE TA09880 TB334 TO-220AA
Text: RLP1N06CLE Data Sheet January 2002 1A, 55V, 0.750 Ohm,Voltage Clamping, Current Limited, N-Channel Power MOSFET Features • 1A, 55V The RLP1N06CLE is an intelligent monolithic power circuit which incorporates a lateral bipolar transistor, resistors, zener diodes, and a PowerMOS transistor. The current
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RLP1N06CLE
RLP1N06CLE
L1N06CL
L1N06CLE
TA09880
TB334
TO-220AA
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A4970SLBT
Abstract: a4970
Text: A4970 Dual Full-Bridge PWM Motor Driver Features and Benefits Description ▪ 750 mA continuous output current ▪ 45 V output sustaining voltage ▪ Internal clamp diodes ▪ Internal PWM current control ▪ Low output saturation voltage ▪ Internal thermal shutdown circuitry
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A4970
UDx2916
A4970SLBT
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TVS3527D
Abstract: TVS35D soldering voids TVS3527
Text: Data Sheet No. TSBD-3500D-1B DIOTEC ELECTRONICS CORP 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 35 AMP OVERVOLTAGE TRANSIENT DISH DIODE MECHANICAL SPECIFICATION FEATURES VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
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TSBD-3500D-1B
Larges60
TVS3527D
tvs35d
TVS3527D
TVS35D
soldering voids
TVS3527
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MGP2N60D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP2N60D/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MGP2N60D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching
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MGP2N60D/D
MGP2N60D
220AB
MGP2N60D
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transistor MJ 122
Abstract: MGY40N60D
Text: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY40N60D/D
MGY40N60D
MGY40N60D/D*
TransistorMGY40N60D/D
transistor MJ 122
MGY40N60D
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MGY30N60D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGY30N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY30N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY30N60D/D
MGY30N60D
MGY30N60D/D*
TransistorMGY30N60D/D
MGY30N60D
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transistor IC 1557 b
Abstract: MGW20N60D motorola 803 transistor
Text: MOTOROLA Order this document by MGW20N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW20N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247
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MGW20N60D/D
MGW20N60D
MGW20N60D/D*
transistor IC 1557 b
MGW20N60D
motorola 803 transistor
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mj 1504 transistor
Abstract: mj 1504 scheme transistor mj 1504 Transistor motorola 418 of mj 1504 transistor MGV12N120D IGBT 0623
Text: MOTOROLA Order this document by MGV12N120D/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement Mode Silicon Gate IGBT & DIODE IN D3PAK 12 A @ 90°C 20 A @ 25°C
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MGV12N120D/D
MGV12N120D
MGV12N120D/D*
mj 1504 transistor
mj 1504 scheme
transistor mj 1504
Transistor motorola 418
of mj 1504 transistor
MGV12N120D
IGBT 0623
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ks621k30
Abstract: RFT Semiconductors Diode and Transistor 1980
Text: mMBSK Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Darlington Transistor Modules Ratings and Characteristics 1.0 and molybdenum. This assembly is next soldered to a copper collector electrode along with a free-wheeling diode chip. The
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order th is docum ent by BUL44D2/D SEMICONDUCTOR TECHNICAL DATA BUL44D2 D esigner’s Data Sheet High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient A ntisaturation N etw ork
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BUL44D2/D
BUL44D2
BUL44D2
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c 547 c transistor
Abstract: No abstract text available
Text: MOTOROLA Order this docum ent by MJE18004D2/D SEMICONDUCTOR TECHNICAL DATA MJE18004D2 D esigner’s Data Sheet High Speed, High Gain Bipolar NPN Pow er Ttansistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient A ntisaturation N etw o rk
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MJE18004D2/D
MJE18004D2
MJE18004D2
1-80C
2PHX34556C-0
c 547 c transistor
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Motorola AN222A
Abstract: application MJ10023 U430B motorola 222A motorola SPS bipolar
Text: M OTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA M J 1 0 0 2 3 Designer’s Data Sheet SW ITCHMODE Series NPN S ilicon Power Darlington Transistor w ith Base-Em itter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR
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MJ10023/D
MJ10023
Motorola AN222A
application MJ10023
U430B
motorola 222A
motorola SPS bipolar
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BUT34/D SEMICONDUCTOR TECHNICAL DATA BUT34 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS
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BUT34/D
BUT34
BUT34
97A-05
O-204AE
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJE18004D2/D SEMICONDUCTOR TECHNICAL DATA MJE18004D2 D esigner’s Data Sheet POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith In tegrated C o llecto r-E m itter Diode and B uilt-in Efficient
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MJE18004D2/D
MJE18004D2
MJE18004D2
21A-06
O-220AB
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C
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MGP11
N60ED/D
MGP11N60ED/D
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Untitled
Abstract: No abstract text available
Text: data sheet e m O IDA-07318 MagIC Silicon Bipolar MMIC 1.5 Gb/s Laser Diode Driver February, 1992 avan tek A Subsidiary of Hewlett-Packard Features • • • • • • • • Avantek 180 mil Package High Data Rates: 1.5 Gb/s NRZ High Modulation Current: 50 mA
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IDA-07318
IDA-07318
1-800-AVANTEK
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