LLE16350X
Abstract: BDT91 BY239
Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE16350X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 03 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors
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LLE16350X
SCA53
127121/00/04/pp12
LLE16350X
BDT91
BY239
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diode BY239
Abstract: BD239 BY239 LLE16045X
Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE16045X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors
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LLE16045X
SCA53
127147/00/02/pp12
diode BY239
BD239
BY239
LLE16045X
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blf175
Abstract: ferroxcube 4322 020 97171 MGP063 ferroxcube wideband hf choke
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF175 HF/VHF power MOS transistor Product specification Supersedes data of 1997 Dec 15 2003 Jul 22 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF175 PIN CONFIGURATION • High power gain
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M3D065
BLF175
MBB072
MSB057
OT123A
SCA75
613524/03/pp21
blf175
ferroxcube 4322 020 97171
MGP063
ferroxcube wideband hf choke
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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philips ferroxcube 4c6
Abstract: mgp063 BLF175 PHILIPS HF CHOKE type 4330 hf amplifier for transformer D1 Marking SOT123 PHILIPS toroidal core MGP080 ferroxcube 4C6 ferroxcube 4322 020 97171
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF175 HF/VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF175 PIN CONFIGURATION • High power gain • Low intermodulation distortion
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BLF175
MBB072
MSB057
OT123
philips ferroxcube 4c6
mgp063
BLF175
PHILIPS HF CHOKE type 4330
hf amplifier for transformer
D1 Marking SOT123
PHILIPS toroidal core
MGP080
ferroxcube 4C6
ferroxcube 4322 020 97171
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NP20P04SLG
Abstract: PT138
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP20P04SLG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP20P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP20P04SLG-E1-AY Note
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NP20P04SLG
NP20P04SLG
NP20P04SLG-E1-AY
NP20P04SLG-E2-AY
O-252
O-252)
PT138
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NP20P06
Abstract: NP20P06SLG NP20P06SLG-E1-AY NP20P06SLG-E2-AY PT138
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP20P06SLG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP20P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP20P06SLG-E1-AY Note
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NP20P06SLG
NP20P06SLG
NP20P06SLG-E1-AY
NP20P06SLG-E2-AY
O-252
O-252)
NP20P06
NP20P06SLG-E1-AY
NP20P06SLG-E2-AY
PT138
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BUK455-50A
Abstract: BUK455-60 BUK465-60A buk455-50
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-60A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK465-60A
OT404
BUK455-50A
BUK455-60
BUK465-60A
buk455-50
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BUK455-100A
Abstract: BUK455-100 BUK465-100A
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK465-100A
OT404
BUK455-100A
BUK455-100
BUK465-100A
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A17980
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D065 BLF175 HF/VHF power MOS transistor Product specification Supersedes data of 1997 Dec 15 2003 Jul 22 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 PIN CONFIGURATION FEATURES • High power gain
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M3D065
BLF175
MBB072
MSB057
OT123A
SCA75
613524/03/pp21
A17980
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Untitled
Abstract: No abstract text available
Text: PSMN002-25P; PSMN002-25B N-channel enhancement mode field-effect transistor Rev. 01 — 22 October 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:
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PSMN002-25P;
PSMN002-25B
PSMN002-25P
O-220AB)
PSMN002-25B
OT404
OT404,
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NP88N03KUG
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N03KUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NP88N03KUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP88N03KUG TO-263 MP-25ZK
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NP88N03KUG
NP88N03KUG
O-263
MP-25ZK)
O-263)
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NP88N03KDG
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N03KDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NP88N03KDG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP88N03KDG TO-263 MP-25ZK
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NP88N03KDG
NP88N03KDG
O-263
MP-25ZK)
O-263)
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Untitled
Abstract: No abstract text available
Text: PBSS4041NX 60 V, 6.2 A NPN low VCEsat BISS transistor 11 December 2012 Product data sheet 1. Technical summary NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
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PBSS4041NX
SC-62)
PBSS4041PX.
AEC-Q101
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BUK465-60A
Abstract: No abstract text available
Text: Product specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION BUK465-60A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK465-60A
OT404
BUK465-60A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK465-100A
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O2SC
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK465-100A
SQT404
O2SC
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T160R
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK465-100A
SQT404
T160R
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TRANSISTOR SE 135
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-60A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK465-60A
OT404
TRANSISTOR SE 135
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE DEVELOPMENT DATA OLE D ~m LbS3T31 DDmTfc,3 • LTE21025R This data sheat contains advance Information and specifications are subject to change w ithout notice. J V r- 2 1 - 0 *? MICROWAVE LINEAR POWER TRANSISTOR N-P’ N Silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4,2 GHz.
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LbS3T31
LTE21025R
FO-41B)
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