Untitled
Abstract: No abstract text available
Text: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm • Operating Voltage
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EN71SN10F
512-Mbit
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Untitled
Abstract: No abstract text available
Text: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm • Operating Voltage
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EN71SN10F
512-Mbit
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Untitled
Abstract: No abstract text available
Text: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 130 balls FBGA Area: 8x9 mm; Height: 1.0 mm • Operating Voltage
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EN71SN10F
512-Mbit
16bit
16bit
32Down
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Untitled
Abstract: No abstract text available
Text: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 130 balls FBGA Area: 8x9 mm; Height: 1.0 mm • Operating Voltage
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EN71SN10F
512-Mbit
16bit
16bit
32Down
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HYB18T2G802BF
Abstract: HYB18T2G802BF-3
Text: November 2007 HYB18T 2G 402B F HYB18T 2G 802B F 2 - G b i t D u a l D i e D o u b l e - D a t a - R a t e - T w o SD R A M DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.10 Date: 2007-11-05 Internet Data Sheet HYB18T2G[40/80]2BF 2-Gbit Dual Die Double-Data-Rate-Two SDRAM
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HYB18T
HYB18T2G
HYB18T2G402BF,
HYB18T2G802BF
DDR2-400B
HYB18T2G402BF-2
HYB18T2G802BF-2
HYB18T2G802BF-3
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Untitled
Abstract: No abstract text available
Text: February 2008 HYB18T 2G 402C F HYB18T 2G 802C F 2 - G b i t D u a l D i e D o u b l e - D a t a - R a t e - T w o SD R A M DDR2 SDRAM RoHS Compliant Products Advance Internet Data Sheet Rev. 0.7 Date: 2008-02-13 Advance Internet Data Sheet HYB18T2G[40/80]2CF
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HYB18T
HYB18T2G
HYB18T2G802CF-3S
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Untitled
Abstract: No abstract text available
Text: November 2007 HYB18T C1G 80 0 BF HYB18T C1G 16 0 BF 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.30 Date: 2007-11-29 Internet Data Sheet HYB18TC1G[80/16]0BF 1-Gbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.30, 2007-11
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HYB18T
HYB18TC1G
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HYB18T1G800
Abstract: HYB18T1G400CFL-3S qimonda HYB18T1G160CF-3S HYB18T1G800CFL-3S
Text: November 2007 HYB18T 1G 400C F HYB18T 1G 800C F HYB18T 1G 160C F 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.20 Date: 2007-11-23 Internet Data Sheet HYB18T1G[40/80/16]0CF L 1-Gbit Double-Data-Rate-Two SDRAM
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HYB18T
HYB18T1G
HYB18T1G400CFL-3S,
HYB18T1G400CFL-2
HYB18T1G800CFL-3S,
HYB18T1G800CFL-2
HYB18T1G160CFL-3S,
HYB18T1G160CFL-2
HYB18T1G800
HYB18T1G400CFL-3S
qimonda HYB18T1G160CF-3S
HYB18T1G800CFL-3S
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Untitled
Abstract: No abstract text available
Text: EN29PL032A EN29PL032A 32 Mbit 2 M x 16-Bit CMOS 3.0 Volt- only, Simultaneous-Read/Write Flash Memory Distinctive Characteristics Software Features Architectural Advantages • Software command-set compatible with JEDEC 42.4 standard • CFI (Common Flash Interface) compliant
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EN29PL032A
16-Bit)
48-pin
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Untitled
Abstract: No abstract text available
Text: EN29PL032A EN29PL032A 32 Mbit 2 M x 16-Bit CMOS 3.0 Volt- only, Simultaneous-Read/Write Flash Memory Distinctive Characteristics Software Features Architectural Advantages • Software command-set compatible with JEDEC 42.4 standard • CFI (Common Flash Interface) compliant
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EN29PL032A
16-Bit)
48-pin
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Untitled
Abstract: No abstract text available
Text: November 2007 HYB18T C1G 80 0 CF HYB18T C1G 16 0 CF 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Advance Internet Data Sheet Rev. 0.51 Date: 2007-12-13 Advance Internet Data Sheet HYB18TC1G[80/16]0CF 1-Gbit Double-Data-Rate-Two SDRAM
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HYB18T
HYB18TC1G
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Untitled
Abstract: No abstract text available
Text: November 2007 HYB18T C25680 0 AF HYB18T C25616 0 AF HYI18TC256800AF HYI18TC256160AF 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.3 Date: 2007-11-23 Internet Data Sheet HY[B/I]18TC256[80/16]0AF 256-Mbit Double-Data-Rate-Two SDRAM
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HYB18T
C25680
C25616
HYI18TC256800AF
HYI18TC256160AF
256-Mbit
18TC256
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Untitled
Abstract: No abstract text available
Text: December 2007 HYB18TC512800B2F HYB18TC512160B2F HYI18 TC 51280 0 B 2 F HYI18 TC 51216 0 B 2 F 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.11 Date: 2007-12-05 Internet Data Sheet HY[B/I]18TC512[80/16]0B2F
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HYB18TC512800B2F
HYB18TC512160B2F
HYI18
512-Mbit
18TC512
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Untitled
Abstract: No abstract text available
Text: January 2008 HYB18T 512400 C F HYB18T 512800 C F HYB18T 512160 C F 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.20 Date: 2008-01-08 Internet Data Sheet HYB18T512[40/80/16]0CF 512-Mbit Double-Data-Rate-Two SDRAM
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HYB18T
512-Mbit
HYB18T512
DDR2-1066
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PU10601EJ01V0DS
PD5715GR
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transistor bc 558
Abstract: bc 558 equivalent HS350 RO4003
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PU10601EJ01V0DS
PD5715GR
transistor bc 558
bc 558 equivalent
HS350
RO4003
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74LVC652
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS 74LVC652 Octal transceiver/register with dual enable 3-State Product specification Supercedes data of 1993 Dec 01 IC24 Data Handbook Philips Semiconductors 1998 Jul 29 Philips Semiconductors Product specification Octal transceiver/register with dual enable (3-State)
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74LVC652
74LVC652
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EN29PL032
Abstract: SA16 cFeon Flash chip
Text: EN29PL032 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29PL032
EN29PL064
EN29PL032
SA16
cFeon Flash chip
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ONFI 3.0
Abstract: 202F
Text: m APPLICATION REVISIONS ì_ NEXT ASSY USED ON ä_ FINAL 1271-01 REV DATE APPROVED ADDED ALLEN VAR TO 3.1.2.4.1 WAVEFORM WAS SINE WAVE 5 /1 /9 7 MSA 5 /2 1 /9 7 WBA CORRECTED PIN DIA, SHEETS 7704 B DESCRIPTION DUPLICATE DRAWING DO NOT REVISE 2 I REV SHEET ^3 UU A-5 Uà L7 U8 U9 50
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S1271B12
360C34
QQ-N-290
S1271B13
ONFI 3.0
202F
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7718
Abstract: 1274-01 127401 7718 A
Text: < ì_ ä_ APPLICATION REVISIONS NEXT ASSY USED ON FINAL 1274-01 REV DESCRIPTION DATE 1.0 WAS 1271-01 APPROVED AWB 8 /7 /9 7 DUPLICATE DRAWING 7718 DO NOT REVISE 2 I REV SHEET A3 AA A5 A6 A7 A8 A9 50 REV SHEET 20 2I 22 23 2A 25 26 27 28 29 30 3I REV A REV STATUS
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DMEN90N
S1274A12
000C50
030C0
390C9
680C17
360C34
QQ-N-290
7718
1274-01
127401
7718 A
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Untitled
Abstract: No abstract text available
Text: APPLICATION REVISIONS USED ON FINAL 1 2 8 7 -0 1 7756 NEXT ASSY REV DESCRIPTION DATE APPROVED A 3.3.2.1 WAS 700m A 11/26/97 B REVISED MECH PIN OUT 12/15/97 c ADDED LESS THAN OR EQUAL TO AND PEAK TO PEAK TO 3.1.2.1 / ADDED STILL AIR TO 4.1.1 3 /1 7 /9 8 AWB
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700mA
DNEN90N
S1287C12
040C1
750C19
005C19
250C6
005C22
005C38
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30T340-1
Abstract: PHilips diode ba
Text: n_n IM M J1 IE 74LVC652 Octal transceiver/register with dual enable 3-State 1998 Jul 29 Product specification Supercedes data of 1993 Dec 01 IC24 Data Handbook Philips Semiconductors P H ILIP S PHILIPS Philips Semiconductors Product specification Octal transceiver/register with dual enable (3-State)
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74LVC652
74LVC652
30T340-1
PHilips diode ba
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS 74ALVCH16501 18-bit universal bus transceiver 3-State Product specification Supersedes data of 1998 Aug 31 IC24 Data Handbook Philips Semiconductors 1998 Sep 29 PHILIPS Philips Sem iconductors Product specification 18-bit universal bus transceiver (3-State)
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74ALVCH16501
18-bit
74ALVCH16501
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Untitled
Abstract: No abstract text available
Text: IN TE G R A TE D C IR C U ITS 74LVC2952A Octal registered tranceiver with 5-volt tolerant inputs/ouputs 3-State Product specification Philips Semiconductors 1998 Jul 29 PHILIPS Philips Semiconductors Product specification Octal registered tranceiver with 5-volt tolerant
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74LVC2952A
74LVC2952A
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