2 pin ir led receiver
Abstract: RC-6 receiver PC87108 Nec Infrared protocol decoder
Text: August 1998 PC87108AVHG/PC87108AVJE Advanced UART and Infrared Controller General Description Features The PC87108A is a serial communications device with infrared capability. It supports 6 modes of operation and is backward compatible with the 16550 and 16450. The operational
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PC87108AVHG/PC87108AVJE
PC87108A
16-bit
2 pin ir led receiver
RC-6 receiver
PC87108
Nec Infrared protocol decoder
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CMP14
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM71-10134-1E FR 60 32-BIT MICROCONTROLLER MB91470/480 Series HARDWARE MANUAL FR 60 32-BIT MICROCONTROLLER MB91470/480 Series HARDWARE MANUAL Be sure to refer to the “Check Sheet” for the latest cautions on development.
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CM71-10134-1E
32-BIT
MB91470/480
32-trol
0000B,
0018H)
CMP14
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Untitled
Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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inverter circuit diagram toshiba a100
Abstract: str 6856 "spindle motor" DP8473 IEEE1284 N82077 PC87338 PC97 PC97338 PD765A
Text: PC87338/PC97338 ACPI 1.0 and PC97 Compliant SuperI/O General Description Differences between the PC87338 and PC97338 are indicated in italics. These differences are summarized in Appendix A. The PC97338 is a fully ACPI 1.0 and PC97 compliant, ISA based Super I/O. It is functionally compatible with
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PC87338/PC97338
PC87338
PC97338
PC87338.
IEEE1284
requir80-530
inverter circuit diagram toshiba a100
str 6856
"spindle motor"
DP8473
N82077
PC97
PD765A
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MB86860
Abstract: 0x80000410 bit3113 SCSN1 sparclite hypersparc BIT3115 S200 SS200 SAD-100
Text: MB86860 SPARClite SPARClite MB86860 Series Data Sheet Rev.1.2 July 27, 1999 Fujitsu This material is preliminary and is subject to change without notice. SPARC is a registered trademark of SPARC International, Inc. in the United States and is based on technology developed by Sun
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MB86860
32-bit
600us
0x80000410
bit3113
SCSN1
sparclite
hypersparc
BIT3115
S200
SS200
SAD-100
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dax6
Abstract: Mobile SDRAM
Text: V55C1256164MG 256Mbit MOBILE SDRAM 1.8 VOLT, TSOP II / FBGA PACKAGE 16M X 16 75 9 10 System Frequency fCK 133 MHz 111 MHz 100MHz Clock Cycle Time (tCK3) 7.5ns 9.0 ns 10 ns Clock Access Time (tAC3) CAS Latency = 3 6.0 ns 7.0 ns 8.0ns • Available in 54-ball FBGA (with 9x6 ball array
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V55C1256164MG
256Mbit
100MHz
dax6
Mobile SDRAM
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Untitled
Abstract: No abstract text available
Text: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Features • High Performance: CAS latency = 2 fCK Clock Frequency tCK2 Clock Cycle tAC2 Clock Access Time
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0316409C
0316169C
0316809C
1Mx16
16Mbit
-12ns
545-DRAM;
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Untitled
Abstract: No abstract text available
Text: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Data Sheet Overview Features • High Performance: CAS latency = 2 • Programmable Burst Length: 1,2,4,8,full-page
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0316409C
0316169C
0316809C
1Mx16
16Mbit
SM2402T-6
SM2403T-6
SM2404T-6
SM2402T-7
SM2403T-7
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EM63A165TS-5G
Abstract: EM63A165TS-6G EM63A165TS-7G EM63A165TS cke 2009 EM63A165
Text: EtronTech EM63A165TS 16M x 16 bit Synchronous DRAM SDRAM Etron Confidential Features • • • • • • • • • • • • Fast access time from clock: 4.5/5.4/5.4 ns Fast clock rate: 200/166/143 MHz Fully synchronous operation Internal pipelined architecture
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EM63A165TS
16-bit
cycles/64ms
54-pin
EM63A165
EM63A165TS-5G
EM63A165TS-6G
EM63A165TS-7G
EM63A165TS
cke 2009
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V54C3128164VAT
Abstract: No abstract text available
Text: V54C3128164VAT HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 8M X 16 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 16 MOSEL VITELIC PRELIMINARY 7PC 7 8PC System Frequency fCK 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3
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V54C3128164VAT
143/133/125MHz
V54C3128164VAT
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Untitled
Abstract: No abstract text available
Text: V54C365 16/80/40 4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns
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V54C365
64Mbit
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V54C3128
Abstract: No abstract text available
Text: V54C3128 16/80/40 4VB 128Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 8M X 16, 16M X 8, 32M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns
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V54C3128
128Mbit
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Untitled
Abstract: No abstract text available
Text: V54C365 16/80/40 4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns
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V54C365
64Mbit
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Untitled
Abstract: No abstract text available
Text: V54C3256 16/80/40 4VD*I 256Mbit SDRAM, INDUSTRIAL TEMPERATURE 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3
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V54C3256
256Mbit
x16Mbit
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Untitled
Abstract: No abstract text available
Text: V54C3256 16/80/40 4VH 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns Clock Access Time (tAC2) CAS Latency = 2
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V54C3256
256Mbit
16Mbit
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V54C3128
Abstract: No abstract text available
Text: V54C3128 16/80/40 4VB 128Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 8M X 16, 16M X 8, 32M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns
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V54C3128
128Mbit
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V54C3128
Abstract: No abstract text available
Text: V54C3128 16/80/40 4VC 128Mbit SDRAM 3.3 VOLT, TSOP II / BGA PACKAGE 8M X 16, 16M X 8, 32M X 4 5 6 7PC 7 10 System Frequency (fCK) 200 MHz 166 MHz 143 MHz 143 MHz 100 MHz Clock Cycle Time (tCK3) 5 ns 6 ns 7 ns 7 ns 10 ns Clock Access Time (tAC3) CAS Latency = 3
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V54C3128
128Mbit
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Untitled
Abstract: No abstract text available
Text: V54C365 16/80/40 4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns
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V54C365
64Mbit
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P-TSOPII-54
Abstract: caz smd PC133 registered reference design
Text: HYB 39S64400/800/160ET L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM Preliminary Datasheet • Automatic and Controlled Precharge Command • High Performance: -7 -7.5 -8 Units fCKMAX 143 133 125 MHz tCK3 7 7.5 8 ns tAC3 5.4 5.4 6 ns tCK2 7.5 10 10
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39S64400/800/160ET
64-MBit
P-TSOPII-54
caz smd
PC133 registered reference design
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54BALL
Abstract: V54C3128
Text: V54C3128 16/80/40 4VB 128Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 8M X 16, 16M X 8, 32M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns
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V54C3128
128Mbit
54BALL
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SMD MARKING T20
Abstract: smd marking T22 MARKING A3 SMD MARKING CODE a09
Text: HYB 39S64400/800CT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Full page (optional) for sequential wrap around • Multiple Burst Read with Single Write Operation -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns • Automatic and Controlled Precharge
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39S64400/800CT
64-MBit
SPT03933
SMD MARKING T20
smd marking T22
MARKING A3
SMD MARKING CODE a09
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STR t 6153
Abstract: OR-2185 LBGD nec upd765 application note "Barium Ferrite"
Text: To all our customers We are pleased to inform you that National Semiconductor Corporation's Advanced PC APC Division joined Winbond Electronics Corporation on May 5th 2005. As a result, in this document “National Semiconductor Corporation” and “National” should be understood as
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20-3A
STR t 6153
OR-2185
LBGD
nec upd765 application note
"Barium Ferrite"
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Untitled
Abstract: No abstract text available
Text: no; C -D O m 2 1 e> Q> contact T-DBIT20-Ì00102 BAOK INSULATOR i-D c m -B v m FRONT INSULATOR l-D C m -FA2K00 S-DBW10-B15102 a> BACfC SHELL S-DBW20-F15202 Q> FRONT SHELL S-DBW2D—F15I0Z 9 1 5 1 1 1 1 1 GOLD FLASH TIN PLATED NICKEL PLATED TIN PLATED 2 3 4
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T-DBH/20-100102
S-DBW20-F15202
ECR-9Q34S
DCW20-
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Untitled
Abstract: No abstract text available
Text: 2 1 _ tì □ □ □ □ □ ö - 1-, 1-1- 1 .— 1— ^ 1— 1— 1 27.50 *- @ S«CK INSULATOR front insulator BACK SHELL FRONT SHELL 1 l-DCWt0-BAÌG00 I-DPWIO-FAIOXI S-DBW10-B15102 S-DBWI0-FI52Q2 S-DBWI0-FI5102 1 1 1
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S-DBW10-B15102
S-DBWI0-FI52Q2
S-DBWI0-FI5102
ECR-S958!
DPW10:
10-00-Q
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