Untitled
Abstract: No abstract text available
Text: Preliminary Product Description SGA-5489 Stanford Microdevices’ SGA-5489 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-5489
50-ohm
SGA-5489
DC-2400
50ble
EDS-100618
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DC-2400 MHz 3.5V SiGe Amplifier
Abstract: No abstract text available
Text: Preliminary Product Description SGA-5486 Stanford Microdevices’ SGA-5486 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-5486
50-ohm
SGA-5486
DC-2400
EDS-100612
DC-2400 MHz 3.5V SiGe Amplifier
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SGA-5486
Abstract: SGA-5486-TR1 SGA-5486-TR2
Text: Preliminary Product Description SGA-5486 Stanford Microdevices’ SGA-5486 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-5486
SGA-5486
50-ohm
DC-2400
EDS-100612
SGA-5486-TR1
SGA-5486-TR2
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PDF
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SGA-5286
Abstract: SGA-5286-TR2
Text: Preliminary Product Description SGA-5286 Stanford Microdevices’ SGA-5286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-5286
SGA-5286
50-ohm
DC-4000
EDS-100610
SGA-5286-TR2
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SGA5289
Abstract: transistor 20 dB 2400 mhz
Text: Preliminary Product Description SGA-5289 Stanford Microdevices’ SGA-5289 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-5289
50-ohm
SGA-5289
DC-4000
EDS-100616
SGA5289
transistor 20 dB 2400 mhz
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description SGA-5286 Stanford Microdevices’ SGA-5286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-5286
50-ohm
SGA-5286
DC-4000
EDS-100610
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mmic a35
Abstract: SGA-3586 Drivers for CATV Amplifiers
Text: Preliminary Product Description SGA-3586 Stanford Microdevices’ SGA-3586 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-3586
SGA-3586
50-ohm
DC-5000
EDS-101382
mmic a35
Drivers for CATV Amplifiers
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description SGA-5389 Stanford Microdevices’ SGA-5389 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-5389
50-ohm
SGA-5389
DC-3200
EDS-100617
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transistor C 5386
Abstract: C 5386 DC-*MHz Amplifier
Text: Preliminary Product Description SGA-5386 Stanford Microdevices’ SGA-5386 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-5386
50-ohm
SGA-5386
DC-3200
EDS-100611
transistor C 5386
C 5386
DC-*MHz Amplifier
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transistor C 5386
Abstract: C 5386 SGA-5386 SGA-5386-TR1 SGA-5386-TR2 DC-3200 c 5386 with Pin
Text: Preliminary Product Description SGA-5386 Stanford Microdevices’ SGA-5386 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-5386
SGA-5386
50-ohm
DC-3200
EDS-100611
transistor C 5386
C 5386
SGA-5386-TR1
SGA-5386-TR2
c 5386 with Pin
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SGA-5389 Z
Abstract: SGA-5389
Text: Preliminary Product Description SGA-5389 Stanford Microdevices’ SGA-5389 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-5389
SGA-5389
50-ohm
DC-3200
EDS-100617
SGA-5389 Z
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TRANSISTOR MARKING A53
Abstract: marking A53 mmic SGA-5325 EDS-100967 amplifier gain 36 dB
Text: Preliminary Product Description SGA-5325 Stanford Microdevices’ SGA-5325 is a high performance cascadeable 50-ohm amplifier housed in an low-cost surface-mountable SOT23-5 plastic package. Designed for operation at voltages as low as 3.5V, this RFIC uses the
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SGA-5325
SGA-5325
50-ohm
OT23-5
DC-3200
EDS-100967
TRANSISTOR MARKING A53
marking A53 mmic
amplifier gain 36 dB
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marking A45
Abstract: germanium transistor ac 128 SGA-4563 marking A45 RF TRANSISTOR 726
Text: Preliminary Preliminary Product Description SGA-4563 Stanford Microdevices SGA-4563 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.4V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-4563
SGA-4563
50-ohm
DC-2500
EDS-101803
marking A45
germanium transistor ac 128
marking A45 RF
TRANSISTOR 726
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Untitled
Abstract: No abstract text available
Text: MAX19757 Dual, SiGe, High-Linearity, 1700MHz to 2700MHz Downconversion Mixer with Advanced Shutdown Features General Description The MAX19757 dual-channel downconverter is designed to provide 8.8dB gain, +25.3dBm input IP3 and 10.4dB NF for a multitude of 1700MHz to 2700MHz basestation
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MAX19757
1700MHz
2700MHz
MAX19757
1800MHz
2600MHz,
1700MHz
2200MHz
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RF2173
Abstract: RF2174 RF3108 dcs response time
Text: RF3108 TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE Typical Applications • 3V Dual-Band/Triple-Band GSM Handsets • Portable Battery-Powered Equipment • Commercial and Consumer Systems • GPRS Class 12 Compatible Product Description The RF3108 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS
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RF3108
RF3108
880MHz
915MHz
1710MHz
1910MHz
1850MHz
RF2173
RF2174
dcs response time
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RF3108
Abstract: No abstract text available
Text: RF3108 TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE Pb-Free Product Typical Applications • 3V Dual-Band/Triple-Band GSM Handsets • Portable Battery-Powered Equipment • Commercial and Consumer Systems • GPRS Class 12 Compatible Product Description The RF3108 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS
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RF3108
RF3108
880MHz
915MHz
1710MHz
1910MHz
1750MHz
1850MHz
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HMC477MP86
Abstract: No abstract text available
Text: v00.0603 MICROWAVE CORPORATION HMC477MP86 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC477MP86 is an ideal RF/IF gain block & LO or PA driver for: P1dB Output Power: +15 dBm • Cellular / PCS / 3G
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HMC477MP86
HMC477MP86
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RF2173
Abstract: RF2174 RF3108 dcs response time
Text: RF3108 TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE Typical Applications • 3V Dual-Band/Triple-Band GSM Handsets • Portable Battery-Powered Equipment • Commercial and Consumer Systems • GPRS Class 12 Compatible Product Description The RF3108 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS
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RF3108
RF3108
880MHz
915MHz
1710MHz
1910MHz
1850MHz
RF2173
RF2174
dcs response time
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Untitled
Abstract: No abstract text available
Text: RF5110 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description -A- • GaAs MESFET Si Bi-CMOS
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RF5110
RF5110
800MHz
950MHz
-36dBm,
100kHz
DS110201
35dBm
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PDF
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Untitled
Abstract: No abstract text available
Text: Product Description SGA-5489 Stanford Microdevices’ SGA-5489 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.
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OCR Scan
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SGA-5489
SGA-5489
50-ohm
DC-2400
EDS-100618
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PDF
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Untitled
Abstract: No abstract text available
Text: Product Description SGA-5486 Stanford Microdevices’ SGA-5486 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.
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OCR Scan
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SGA-5486
SGA-5486
50-ohm
DC-2400
EDS-100612
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PDF
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Untitled
Abstract: No abstract text available
Text: Product Description SGA-5289 Stanford Microdevices’ SGA-5289 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.
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OCR Scan
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SGA-5289
SGA-5289
50-ohm
DC-4000
EDS-100616
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PDF
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Untitled
Abstract: No abstract text available
Text: Mît Product Description SGA-5386 Stanford Microdevices’ SGA-5386 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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OCR Scan
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SGA-5386
SGA-5386
50-ohm
DC-3200
EDS-100611
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PDF
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Untitled
Abstract: No abstract text available
Text: Product Description SGA-5389 Stanford Microdevices’ SGA-5389 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.
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OCR Scan
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SGA-5389
SGA-5389
50-ohm
DC-32Ã
DC-3200
EDS-100617
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PDF
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