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    Winchester Interconnect CMM1422SDD13S32GDF50

    CONN SER CMM 14 CONT SOC 030D
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    DD13S3 Datasheets Context Search

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    BD 9883

    Abstract: No abstract text available
    Text: M 28LV64A ic r o c h ip 64k 8k x 8 CMOS EEPROM FEATURES BLOCK DIAGRAM • Read Access Time— 300 ns • CMOS Technology for Low Power Dissipation - 8 mA Active - 50 |iA CMOS Standby Current • Byte Write Time— 3 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write


    OCR Scan     		28LV64A 28-pin DS00049F-page 012b24 BD 9883 PDF

    A0236-1

    Abstract: LS656AB LS656 LS656B M761 0TI13S25 A08 monolithic amplifier 19407 telephone CIRCUIT st2v
    Text: TELEPHONE SPEECH CIRCUIT WITH M ULTIFREQ UEN CY TONE G EN ERATO R INTERFACE The LS656 is a monolithic integrated circuit in 16-lead plastic package to replace the hybrid circuit in telephone set. It works with the same type of transducers for both transmitter and


    OCR Scan     		0TI13S25 LS656 LS656 16-lead A0236-1 LS656AB LS656B M761 A08 monolithic amplifier 19407 telephone CIRCUIT st2v PDF

    KM428C128

    Abstract: No abstract text available
    Text: SAMSUNG ELECTR ONI CS INC bHE D • 7Tb4142 GD13ÖSb ES7 I SMGK PRELIMINARY KM428C128 CMOS VIDEO RAM 12 8 K X 8 Bit CMOS Video RAM FEATURES • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance Speed — -Parameter


    OCR Scan     		7Tb4142 KM428C128 100ns 125ns 150ns 180ns 40-PIN 40/44-PIN KM428C128 PDF