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    Abstract: No abstract text available
    Text: • bb53T31 00243b3 407 N AHER PHILIPS/DISCRETE APX BAV74 b7E D J V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The device consists of two diodes in a microminiature plastic envelope. The cathodes are commoned and the device is intended for high-speed switching in thick and thin-film circuits.


    OCR Scan     		PDF bb53T31 00243b3 BAV74 DD243tiLi