DD4D711 Search Results

Untitled

Abstract: No abstract text available
Text: SSW/I5N80A A d van ced Power MOSFET FEATURES B • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge V ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS = 800V ■