NT5TU128M8DE
Abstract: NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD NT5TU256M4DE nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE
Text: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG NT5TB256M4DE / NT5TB128M8DE / NT5TB64M16DG 1Gb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -AD/-ADI -AC/-ACI/-ACL -BE -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6
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NT5TU256M4DE
NT5TU128M8DE
NT5TU64M16DG
NT5TB256M4DE
NT5TB128M8DE
NT5TB64M16DG
-37B/-37BI
DDR2-533
DDR2-667
DDR2-800
NT5TU64M16DG
nt5tu64m16dg-Bd
NT5TU128M8DE-BD
nt5tu64m
NT5TU64M16
NT5TU64M16DG-3C
NT5TU64M16DG-3CI
NT5TU64M16DG-BE
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NT5TU32M16CG-BD
Abstract: NT5TU32M16CG-be NT5TU64M8CE
Text: NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG 512Mb DDR2 SDRAM C-Die Features • 1.8V ± 0.1V Power Supply Voltage • Data-Strobes: Bidirectional, Differential • Programmable CAS Latency: 3,4,5,6 and 7 • 4 internal memory banks • Programmable Additive Latency: 0, 1, 2, 3, and 4
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NT5TU128M4CE
NT5TU64M8CE
/NT5TU32M16CG
512Mb
NT5TU32M16CG-BD
NT5TU32M16CG-be
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W971GG6JB
Abstract: 8X12 DDR2-667 DDR2-800 0A80
Text: W971GG6JB 8M 8 BANKS 16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W971GG6JB
W971GG6JB
8X12
DDR2-667
DDR2-800
0A80
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MT47H128M8CF-25
Abstract: 8 resistor array 10k smd 103
Text: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration
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MT47H128M8
MT47H64M16
18-compatible)
8192-cycle
09005aef840eff89
MT47H128M8CF-25
8 resistor array 10k smd 103
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PDF
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HYB18T1G160C2F-25F
Abstract: HYB18T1G400C2F-3S HYB18T1G800C2F-25F HYI18T1G160C2F-3 DDR2-800E
Text: January 2008 HY[B/I]18T1G400C2[C/F] HY[B/I]18T1G800C2[C/F] HY[B/I]18T1G160C2[C/F] 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.02 Internet Data Sheet HY[B/I]18T1G[40/80/16]0C2[C/F] 1-Gbit Double-Data-Rate-Two SDRAM
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18T1G400C2
18T1G800C2
18T1G160C2
18T1G
HYB18T1G160C2F-25F
HYB18T1G400C2F-3S
HYB18T1G800C2F-25F
HYI18T1G160C2F-3
DDR2-800E
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Untitled
Abstract: No abstract text available
Text: ESMT M14D5121632A 2H Operation Temperature Condition (TC) -40°C~95°C DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z VDD = 1.75V ~ 1.9V, VDDQ = 1.75V ~ 1.9V (for speed grade -1.8) z
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M14D5121632A
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M14D1G166
Abstract: m14d1g M14D1G1664A m14d1g16 DDRII esmt
Text: ESMT M14D1G1664A 2D 7DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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M14D1G1664A
M14D1G166
m14d1g
M14D1G1664A
m14d1g16
DDRII
esmt
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Untitled
Abstract: No abstract text available
Text: W9712G6KB 2M 4 BANKS 16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W9712G6KB
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W971GG6KB
Abstract: W971GG6KB-3 W971GG6KB-25 W971GG6KB25
Text: W971GG6KB 8M 8 BANKS 16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W971GG6KB
W971GG6KB-3
W971GG6KB-25
W971GG6KB25
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PDF
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Untitled
Abstract: No abstract text available
Text: Nanya Technology Corp. DDR3 L 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features Signal Integrity JEDEC DDR3 Compliant - Configurable DS for system compatibility
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512M8CN
256M16CP
DDR3L-1866
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PDF
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Untitled
Abstract: No abstract text available
Text: 2Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H256M8 – 32 Meg x 8 x 8 banks MT47H128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • • Marking • Configuration
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MT47H256M8
MT47H128M16
60-ball
84-ball
DDR2-800)
DDR2-667)
09005aef8441c566
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HYB18T1G400C2FL-3
Abstract: HYB18T1G400C2F-3S
Text: March 2008 HY[B/I]18T1G400C2[C/F] L HY[B/I]18T1G800C2[C/F](L) HY[B/I]18T1G160C2[C/F](L) 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM Internet Data Sheet Rev. 1.20 Internet Data Sheet HY[B/I]18T1G[40/80/16]0C2[C/F](L) 1-Gbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.20, 2008-03
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18T1G400C2
18T1G800C2
18T1G160C2
18T1G
HYB18T1G400C2FL-3
HYB18T1G400C2F-3S
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 3 25A 25 19A DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)
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V59C1G01
32Mbit
16Mbit
DDR2-667
DDR2-800
DDR2-1066
875ns
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DDR2-667C
Abstract: tls 106-6
Text: June 2008 HYB18T 1G 400C 4 F HYB18T 1G 800C 4 F HYB18T 1G 160C 4 F 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM EU RoHS Compliant Products Advance Internet Data Sheet Rev. 0.50 Advance Internet Data Sheet HYB18T1G[40/80/16]0C4F 1-Gbit Double-Data-Rate-Two SDRAM
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HYB18T
HYB18T1G
04212008-66HT-ZLFE
DDR2-667C
tls 106-6
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 5 37 3 25 18 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)
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V59C1G01
32Mbit
16Mbit
DDR2-400
DDR2-533
DDR2-667
DDR2-800
DDR2-1066
875ns
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PDF
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Untitled
Abstract: No abstract text available
Text: November 2007 HYB18T C1G 80 0 CF HYB18T C1G 16 0 CF 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Advance Internet Data Sheet Rev. 0.51 Date: 2007-12-13 Advance Internet Data Sheet HYB18TC1G[80/16]0CF 1-Gbit Double-Data-Rate-Two SDRAM
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HYB18T
HYB18TC1G
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Untitled
Abstract: No abstract text available
Text: V59C1256 404/804/164 QI HIGH PERFORMANCE 256 Mbit DDR2 SDRAM 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 37 3 25A 25 19A DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)
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V59C1256
16Mbit
DDR2-533
DDR2-667
DDR2-800
DDR2-1066
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PDF
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Untitled
Abstract: No abstract text available
Text: V59C1G01 808/168 QC HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 37 3 25A 25 19A DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4) 3.75ns 3.75ns 3.75ns
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V59C1G01
16Mbit
DDR2-533
DDR2-667
DDR2-800
DDR2-1066
875ns
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HYB18TC512160CF-19F
Abstract: HYB18TC512160CF
Text: July 2008 HYB18T C51280 0 CF HYB18T C51216 0 CF 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM EU RoHS Compliant Products Internet Data Sheet Rev. 1.10 Internet Data Sheet HYB18TC512[80/16]0CF 512-Mbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.10, 2008-07
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HYB18T
C51280
C51216
512-Mbit
HYB18TC512
DDR2-1066
HYB18TC512160CF-19F
HYB18TC512160CF
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PDF
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ddr2 ram repair
Abstract: lpddr2 lpddr2 datasheet JESD209 Jedec JESD209 JESD208 intel lpddr2 JESD209-2 ddr ram repair JESD*208
Text: Agilent Technologies N5413B DDR2 and LPDDR2 Compliance Test Application for Infiniium 9000 and 90000 Series Oscilloscope Data Sheet Test, debug and characterize your DDR2 and LPDDR2 designs quickly and easily The Agilent Technologies N5413B DDR2 and LPDDR2 compliance test
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N5413B
N5413B
JESD79-2E
JESD208
DDR2-1066
JESD2092
5989-3195EN
ddr2 ram repair
lpddr2
lpddr2 datasheet
JESD209
Jedec JESD209
JESD208
intel lpddr2
JESD209-2
ddr ram repair
JESD*208
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H9ccnnn
Abstract: H9CKNNNB H5MS1G22AFRE3M H5MS2G22MFR-J3M H5MS2G62 H55S2622JFR-60M H9TKNNN2GDMP-LRNDM DDR333 H5MS2G62AFR-J3M H5MS1G22AFR-E3M
Text: Page 1 DENSI TY ORG. SPEED PART NUMBER Package FEATURE Availability 2Gb 64M x 16 166MHz H55S2G62MFP-60M FBGA 54ball 4Bank, 1.8V/ 1.8V Now 133MHz H55S2G62MFP-75M FBGA(54ball) 4Bank, 1.8V/ 1.8V Now 166MHz H55S2G22MFP-60M FBGA(90ball) 4Bank, 1.8V/ 1.8V Now 133MHz
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166MHz
H55S2G62MFP-60M
54ball)
133MHz
H55S2G62MFP-75M
H55S2G22MFP-60M
90ball)
H9ccnnn
H9CKNNNB
H5MS1G22AFRE3M
H5MS2G22MFR-J3M
H5MS2G62
H55S2622JFR-60M
H9TKNNN2GDMP-LRNDM
DDR333
H5MS2G62AFR-J3M
H5MS1G22AFR-E3M
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MT47H32M16 DATA SHEET
Abstract: DDR2 16 meg x16 industrial old file for mt47h32m16 Theta JC of FBGA DDR2-400 DDR2-533 DDR2-667 DDR2-800 MT47H32M16 MT47H64M8
Text: 512Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 – 32 Meg x 4 x 4 banks MT47H64M8 – 16 Meg x 8 x 4 banks MT47H32M16 – 8 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • • Configuration
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512Mb:
MT47H128M4
MT47H64M8
MT47H32M16
84-ball
60-ball
MT47H32M16 DATA SHEET
DDR2 16 meg x16 industrial
old file for mt47h32m16
Theta JC of FBGA
DDR2-400
DDR2-533
DDR2-667
DDR2-800
MT47H32M16
MT47H64M8
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H5PS1G63
Abstract: H5PS1G63EFR H5PS1G63EF H5PS1G63EFR S5 H5PS1G63EFR-XX DDR2-667 DDR2-800 H5PS1 DDR2 hynix H5PS1G63EFR-
Text: H5PS1G63EFR Series 1Gb DDR2 SDRAM H5PS1G63EFR-xxC H5PS1G63EFR-xxI H5PS1G63EFR-xxL H5PS1G63EFR-xxJ [New Product] H5PS1G63EFR-xxP H5PS1G63EFR-xxQ This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
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H5PS1G63EFR
H5PS1G63EFR-xxC
H5PS1G63EFR-xxI
H5PS1G63EFR-xxL
H5PS1G63EFR-xxJ
H5PS1G63EFR-xxP
H5PS1G63EFR-xxQ
Page16
H5PS1G63
H5PS1G63EF
H5PS1G63EFR S5
H5PS1G63EFR-XX
DDR2-667
DDR2-800
H5PS1
DDR2 hynix
H5PS1G63EFR-
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09005aef82f1e6e2
Abstract: No abstract text available
Text: 512Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 – 32 Meg x 4 x 4 banks MT47H64M8 – 16 Meg x 8 x 4 banks MT47H32M16 – 8 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • • Configuration
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512Mb:
MT47H128M4
MT47H64M8
MT47H32M16
18-compatible)
192-cycle
09005aef82f1e6e2
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PDF
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