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    DEPLETION MODE MOSFET AUDIO Search Results

    DEPLETION MODE MOSFET AUDIO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    DEPLETION MODE MOSFET AUDIO Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FET pair n-channel p-channel

    Abstract: P-Channel Depletion-Mode MOSFET
    Text: An introduction to Depletion-mode MOSFETs By Linden Harrison Since the mid-nineteen seventies the “enhancement-mode” MOSFET has been the subject of almost continuous global research, development, and refinement by both the semiconductor industry and academia. As a result it has become the predominant


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 1.6A 10Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000


    Original     		IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 O-252 O-263 O-220) O-263 O-220 O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V


    Original     		IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 800mA O-252 O-263 O-220) O-263 O-220 PDF

    IXTP08N100D2

    Abstract: IXTA08N100D2 IXTY08N100D2 08N100 08n10 500VID ixtp08n100 T08N
    Text: Preliminary Technical Information IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V


    Original     		IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 800mA O-252 O-263 O-220) O-263 O-220 IXTP08N100D2 IXTA08N100D2 IXTY08N100D2 08N100 08n10 500VID ixtp08n100 T08N PDF

    08N50D

    Abstract: IXTY08N50D2
    Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 RDS(on) N-Channel = > ≤ 500V 800mA 4.6Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous


    Original     		IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 800mA O-252 O-220) O-263 O-220 O-263 08N50D IXTY08N50D2 PDF

    IXTY1R6N50D2

    Abstract: IXTP1R6N50D2
    Text: Preliminary Technical Information IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 500V 1.6A 2.3Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous


    Original     		IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 O-252 O-220) O-263 O-220 O-263 O-220AB IXTY1R6N50D2 IXTP1R6N50D2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 RDS(on) N-Channel = > ≤ 500V 1.6A 2.3Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous


    Original     		IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 O-252 O-220) O-263 O-220 O-263 O-220Aea PDF

    08N50D

    Abstract: ixty08n50d2 IXTP08N50D2
    Text: Preliminary Technical Information IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 500V 800mA 4.6Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous


    Original     		IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 800mA O-252 O-220) O-263 O-220 O-263 08N50D ixty08n50d2 IXTP08N50D2 PDF

    IXTH6N50D2

    Abstract: IXTP6N50D2 IXTA6N50D2 6N50D2 IXTP6N50
    Text: Preliminary Technical Information IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 500V 6A 500mΩ Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous


    Original     		IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 O-263 O-220 O-247) O-263 O-247 O-220AB IXTH6N50D2 IXTP6N50D2 IXTA6N50D2 6N50D2 IXTP6N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTA1N170DHV IXTH1N170DHV Depletion Mode MOSFET VDSX ID on RDS(on) = >  1700V 1A 16  N-Channel TO-263HV (IXTA) G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 1700 V VDGX


    Original     		IXTA1N170DHV IXTH1N170DHV O-263HV O-247HV 062in. 100ms 1N170D PDF

    IXTP1R6N100D2

    Abstract: IXTY1R6N100D2
    Text: IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 1.6A 10Ω Ω N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings TO-263 AA (IXTA) 1000 V Continuous ±20


    Original     		IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 O-252 O-263 O-220AB O-220) O-252 O-220 IXTP1R6N100D2 PDF

    IXTH6N100D2

    Abstract: No abstract text available
    Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V Continuous


    Original     		IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 O-263 O-220AB O-220 O-247) O-263 O-247 IXTH6N100D2 PDF

    08N50

    Abstract: No abstract text available
    Text: IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = >  500V 800mA 4.6  TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25C to 150C Maximum Ratings 500 V VGSX Continuous 20 V VGSM Transient


    Original     		IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 800mA O-252 O-220) O-263 O-220 08N50 PDF

    T3N100

    Abstract: IXTA3N100D2 3n100 ixta3n100 IXTP3N100D2
    Text: Preliminary Technical Information IXTA3N100D2 IXTP3N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX G Maximum Ratings S 1000 V Continuous ±20 V VGSM


    Original     		IXTA3N100D2 IXTP3N100D2 O-263 O-220) O-263 O-220 O-220AB 100ms 3N100D2 T3N100 IXTA3N100D2 3n100 ixta3n100 IXTP3N100D2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Depletion Mode MOSFET VDSX ID on IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 RDS(on) = > ≤ 1000V 1.6A 10Ω Ω N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings TO-263 AA (IXTA) 1000 V Continuous ±20


    Original     		IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 O-252 O-263 O-220) O-263 O-220 O-220AB PDF

    IXTH16N10D2

    Abstract: depletion mode mosfet 16N10D2 T16N1 ixtt16N10D2 DS100258A
    Text: Preliminary Technical Information IXTH16N10D2 IXTT16N10D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 100V 16A 64mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 175°C 100 V VDGX TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXTH16N10D2 IXTT16N10D2 O-247 O-268 O-247) O-247 100ms 16N10D2 depletion mode mosfet T16N1 ixtt16N10D2 DS100258A PDF

    Untitled

    Abstract: No abstract text available
    Text: Depletion Mode MOSFET VDSX ID on IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 = > ≤ RDS(on) 500V 6A 550mΩ Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous ±20 V VGSM Transient ±30 V


    Original     		IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 O-263 O-220 O-247) O-263 O-247 O-220AB PDF

    IXTH16N10D2

    Abstract: IXTT16N10D2 16N10
    Text: Advance Technical Information IXTH16N10D2 IXTT16N10D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 100V 16A 64mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 100 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH16N10D2 IXTT16N10D2 O-247 O-247) O-268 100ms 16N10D2 IXTH16N10D2 IXTT16N10D2 16N10 PDF

    IXTH16N20D2

    Abstract: 16n20 16N20D2 ixtt16n20d2
    Text: Advance Technical Information IXTH16N20D2 IXTT16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 200V 16A 73mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 200 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH16N20D2 IXTT16N20D2 O-247 O-247) O-268 100ms Impedance10 IXTH16N20D2 16n20 16N20D2 ixtt16n20d2 PDF

    t16n50

    Abstract: 16N50 depletion mode mosfet IXTH16N50D2 IXTT16N50D2 DS100261 S5250
    Text: Advance Technical Information IXTH16N50D2 IXTT16N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 500V 16A 240mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH16N50D2 IXTT16N50D2 O-247 O-247) O-268 100ms 16N50D2 t16n50 16N50 depletion mode mosfet IXTH16N50D2 IXTT16N50D2 DS100261 S5250 PDF

    IXTP6N50D2

    Abstract: IXTH6N50D2 6N50D2 IXTA6N50D2 6n50
    Text: IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 500V 6A 500mΩ Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous ±20 V VGSM Transient ±30 V


    Original     		IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 O-263 O-220 O-247) O-263 O-247 O-220AB IXTP6N50D2 IXTH6N50D2 6N50D2 IXTA6N50D2 6n50 PDF

    t16n50

    Abstract: 16N50D2 IXTH16N50D2 IXTT16N50D2 DS100261
    Text: Preliminary Technical Information IXTH16N50D2 IXTT16N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 500V 16A 240mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH16N50D2 IXTT16N50D2 O-247 O-268 O-247) O-247 100ms 16N50D2 t16n50 IXTT16N50D2 DS100261 PDF

    IXTT16N20D2

    Abstract: 16n20 IXTH16N20D2 16N20D2 40810
    Text: Preliminary Technical Information IXTH16N20D2 IXTT16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 200V 16A 73mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 200 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH16N20D2 IXTT16N20D2 O-247 O-268 O-247) O-247 100ms Impedance10 IXTT16N20D2 16n20 16N20D2 40810 PDF

    6N50D2

    Abstract: No abstract text available
    Text: IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 500V 6A 550mΩ Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous ±20 V VGSM Transient ±30 V


    Original     		IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 O-263 O-220AB O-247 O-220 O-247) O-220 6N50D2 PDF