DEPLETION NMOS Search Results

DEPLETION NMOS Result Highlights (5)

Part	Manufacturer	Description
D8087-1	Rochester Electronics LLC	Math Coprocessor, 16-Bit, NMOS, CDIP40, CERDIP-40
P8251A-G	Rochester Electronics LLC	P8251A - Serial I/O Controller, NMOS
P8085AH-2-G	Rochester Electronics LLC	P8085 - Microprocessor, 8-Bit, 5MHz, NMOS, PDIP40
D8031AH	Rochester Electronics LLC	Microcontroller, 8-Bit, 6MHz, NMOS, CDIP40, CERDIP-40
C8231A	Rochester Electronics LLC	Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24

DEPLETION NMOS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXTA02N100D2 Abstract: depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2 Text: Depletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation Applications like constant current sources, solid-state relays, telecom switches and high voltage DC lines in power systems require N-channel Depletion-mode power MOSFET that operates as a normally “on” switch when the gate-to-source voltage is zero VGS=0V .	Original	PDF	AN-D16, IXTA02N100D2 depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2
NTE2102 Abstract: NTE210 Text: NTE2102 Integrated Circuit NMOS, 1K Static RAM SRAM , 350ns Description: The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage	Original	PDF	NTE2102 350ns NTE2101 NTE2102 NTE210
FET pair n-channel p-channel Abstract: P-Channel Depletion-Mode MOSFET Text: An introduction to Depletion-mode MOSFETs By Linden Harrison Since the mid-nineteen seventies the “enhancement-mode” MOSFET has been the subject of almost continuous global research, development, and refinement by both the semiconductor industry and academia. As a result it has become the predominant	Original	PDF
220vac LED driver Abstract: rectified constant power led driver 220V LED circuit CCSL 220v led driver circuit LED 220V lamp circuit 220V Driver led string lights application note led driver 220VAC-265VAC Text: CCSL-1/2/3/4 Low Power Loss LED Driver For AC LED Lamp NEON uses the world first patented N-MOS depletion device, CCSL series, which supply constant current from 2 to 50 volts for LED lighting application. This series product connected in series with string of LED lights can be connected directly to the	Original	PDF	O-220 220VAC O-252 220vac LED driver rectified constant power led driver 220V LED circuit CCSL 220v led driver circuit LED 220V lamp circuit 220V Driver led string lights application note led driver 220VAC-265VAC
"RF MOSFETs" Abstract: "vlsi technology" abstract for n channel depletion MOSFET depletion p mosfet RF MOSFETs AN1226 mosfet for different channel length AN1228 n mosfet depletion mosfet p-type Text: AN1226 APPLICATION NOTE UNDERSTANDING LDMOS DEVICE FUNDAMENTALS John Pritiskutch - Brett Hanson 1. ABSTRACT This paper focuses on the structural aspects of two basic types of RF power MOSFETS: the DMOS and the LDMOS. The comparison of the DMOS and LDMOS structures reveals the basic fundamentals of the	Original	PDF	AN1226 "RF MOSFETs" "vlsi technology" abstract for n channel depletion MOSFET depletion p mosfet RF MOSFETs AN1226 mosfet for different channel length AN1228 n mosfet depletion mosfet p-type
"RF MOSFETs" Abstract: n mosfet depletion depletion p mosfet "vlsi technology" abstract for N CHANNEL DEPLETION MOSFET p channel depletion mosfet RF MOSFETs "vlsi technology" abstract AN1226 n mosfet depletion note Text: AN1226 APPLICATION NOTE UNDERSTANDING LDMOS DEVICE FUNDAMENTALS John Pritiskutch - Brett Hanson 1. ABSTRACT This paper focuses on the structural aspects of two basic types of RF power MOSFETS: the DMOS and the LDMOS. The comparison of the DMOS and LDMOS structures reveals the basic fundamentals of the	Original	PDF	AN1226 "RF MOSFETs" n mosfet depletion depletion p mosfet "vlsi technology" abstract for N CHANNEL DEPLETION MOSFET p channel depletion mosfet RF MOSFETs "vlsi technology" abstract AN1226 n mosfet depletion note
SiC JFET Abstract: ESD "p-well" n-well" varactor diode parameter 0.6 um cmos process depletion nmos barrier varactor X-Fab Text: 0.6 µm BiCMOS Process MIXED-SIGNAL FOUNDRY EXPERTS XB06 Modular 0.6µm BiCMOS Process Module Overview MOS transistor NMOS PMOS CORE CORE 5V double poly/metal BiCMOS module Source Source Drain Drain 0.5µm enhanced bipolar module Gate Gate n+ p+ n+ p+ CAPPOLY	Original	PDF	BIP05 SiC JFET ESD "p-well" n-well" varactor diode parameter 0.6 um cmos process depletion nmos barrier varactor X-Fab
NMOS depletion pspice model Abstract: NMOS MODEL PARAMETERS SPICE "X-Fab" Core cell library PSPICE MODEL R2R bsim3 ADS bsim3 model SPECTRE MODEL QS 100 NPN Transistor RP20 analog devices transistor tutorials Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications	Original	PDF
CMOS Abstract: No abstract text available Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications	Original	PDF
486DX-CPU Abstract: tamagawa 486DX transistors mos retrograde well 0.35 Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling	Original	PDF
0.6 um cmos process Abstract: CMOS Process Family hv 082 1P2M pmos depletion nmos 0.13 um CMOS nmos pmos array trench mos HV diode Text: 0.6 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XT06 SOI CMOS with extended HV Technology Modular 0.6 µm Trench Isolated SOI CMOS process for analog/mixed-signal and high-voltage applications. Module Overview CORE CORE The process offers reduced parasitics which results in	Original	PDF
0.18 um CMOS Process Abstract: 0.18 um CMOS sonos CMOS Process Family NMOS transistor 0.18 um CMOS XH018 poly silicon resistor LDMOS digital 330 resistor DSASW0041939 Text: 0.18 µm CMOS Process Family XH018 HV CMOS Modular 0.18 µm CMOS process with integrated HV and NVM available for advanced mixed-signal applications Target Applications Module Overview AC Motor 100 0.1 0.01 XH018 Digital 1 XH018 Versatile Application Space	Original	PDF	XH018 XH018 0.18 um CMOS Process 0.18 um CMOS sonos CMOS Process Family NMOS transistor 0.18 um CMOS poly silicon resistor LDMOS digital 330 resistor DSASW0041939
depletion MOSFET SPICE Abstract: depletion MOSFET IRFZ20 Theory of Modern Electronic Semiconductor Device subcircuit with power switch new cosmos NMOS MODEL PARAMETERS SPICE Text: APPLICATION NOTE A NEW APPROACH TO PARAMETER EXTRACTION FOR THE SPICE POWER MOSFET MODEL by M. Melito, F. Portuese ABSTRACT The increasing complexity of Power MOSFET technology and the inclusion, on the same chip, of more and more intelligence together with the power	Original	PDF
0.18 um CMOS parameters Abstract: poly silicon resistor pepi c 0.18 um CMOS technology World transistors Text: 1.0 µm CMOS Process XC10 1.0 µm Mixed Signal CMOS Technology Schematic cross section NMOS Poly-Poly-CAP Broad variety of combinable process elements available: PMOS - Double poly capacitor Source Drain Source Drain Gate n+ - High ohmic and low TC resistors	Original	PDF	10-3/K] 0.18 um CMOS parameters poly silicon resistor pepi c 0.18 um CMOS technology World transistors

Spice Model for TMOS Power MOSFETs Abstract: scr spice model n mosfet depletion pspice model parameters transistor SMD making code 3f MOTOROLA smd SCR 707n AN1043 1E12 ABM11 BUZ103S Text: A Hierarchical Cross-Platform Physics Based MOSFET Model for SPICE and SABER By Jon Mark Hancock Siemens Microelectronics ABSTRACT A physics based MOSFET subcircuit model has been developed and implemented for SABER and several SPICE platforms, including PSPICE, IS-SPICE, and S-SPICE. The model is hierarchical in	Original	PDF
CMOS Process Family Abstract: polysilicon XA035 poly silicon resistor polysilicon resistor Text: 0.35 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XA035 High Temprature combining HV and NVM modular CMOS Technology Modular 0.35 µm High Temperature CMOS process with operating temperature up to 175 °C. Module Overview CORE CORE The XA035 process is ideally suited for high-precision	Original	PDF	XA035 XA035 16Kbit CMOS Process Family polysilicon poly silicon resistor polysilicon resistor
relay 12v 200 ohm Abstract: load-dump airbag temic telefunken IC flasher Text: BCDMOS and I2L Technologies BCDMOS Characteristics Power transistor: MOS transistors: CMOS 5 V: Bipolar: Masks: Wiring: Channel length: VBR = 55 V, rDSon = 4.5 mWcm2 NMOS/PMOS 12 V 9 500 Gates/mm2 npn/pnp lateral 18 2 layers 2 mm (CMOS) Transistors Parameter	Original	PDF	10-mV relay 12v 200 ohm load-dump airbag temic telefunken IC flasher
CMOS Process Family Abstract: XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor XP018 process flow diagram "X-Fab" Core cell library Text: 0.18 µm CMOS Process Family XP018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron CMOS Power Management Process Technology Description The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS Power Management Technology. Based upon the industrial standard single	Original	PDF	XP018 XP018 18-micron CMOS Process Family XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor process flow diagram "X-Fab" Core cell library
Untitled Abstract: No abstract text available Text: R6500/41 • R6500/42 Rockwell R6500/41 AND R6500/42 ONE-CHIP INTELLIGENT PERIPHERAL CONTROLLERS SECTION 1 INTRODUCTION 1.1 FEATURES • NMOS-3 silicon gate, depletion load technology • Directly compatible with 6500, 6800, 8080, and Z80 bus families • Single + 5V power supply	OCR Scan	PDF	R6500/41 R6500/42 R6500/41 64-pin R6500/42 40-pin R6500/42.
8288 bus controller interfacing with 8086 Abstract: INTEL 1980 communication between 8086 and 8089 8289 bus arbiter 8086 8089 architecture 8089 microprocessor architecture interfacing 8289 with 8086 8089-2 multiprocessor 8089 Text: FU JITSU NMOS 8 & 16-BIT I/O PROCESSOR The Fujitsu M B L 8089 is a revolutionary concept in microprocessor in p u t/o u tp u t processing. Packaged in a 40-pin DIP package. M B L 8089 is a high performance processor implemented in N-channel, depletion load silicon gate technology	OCR Scan	PDF	16-BIT 40-pin y8/16 20-bit 40-LEAD DIP-40C-A01) 8288 bus controller interfacing with 8086 INTEL 1980 communication between 8086 and 8089 8289 bus arbiter 8086 8089 architecture 8089 microprocessor architecture interfacing 8289 with 8086 8089-2 multiprocessor 8089
IC 2267 Abstract: mec 5025 NEC JAPAN upd7011 c dy128 uPD7011 PD7720 7011c 8085A-2 HPD7720 NVR2 Text: D A T A SHEET NEC M OS INTEGRATED C IR C U IT ELECTRON DEVICE . / / P D - 7 0 1 1 8 -B IT N M O S D / A C O NVERTER The /jPD7011 is a low cost 8-bit NMOS digital-to-analog converter using Enhancement Depletion ED technology. The /-iPD7011 features single +5 V power supply operation and on board voltage reference.	OCR Scan	PDF	uPD7011 /PD7720 PD7011 juCOM-87, /JPD7720 IC 2267 mec 5025 NEC JAPAN upd7011 c dy128 PD7720 7011c 8085A-2 HPD7720 NVR2
IC 2267 Abstract: 7011-C PD7011C 7011c UD701 OF 8 pin DIP IC 7011c Text: D A TA SH EET SEC M O S INTEGRATED C IR C U IT ELECTRON DEVICE / / P D 7 0 1 1 8 -B IT N M O S D /A C O N VERTER The /iPD7011 is a low cost 8-bit NMOS digital-to-analog converter using Enhancement Depletion ED technology. The /j PD70 11 features single +5 V power supply operation and on board voltage reference.	OCR Scan	PDF	uPD7011 HPD7720 PD7011 1988M IC 2267 7011-C PD7011C 7011c UD701 OF 8 pin DIP IC 7011c
multiplexed 4-digit seven segment led display Abstract: 5 Digit led UP-DOWN COUNTER Text: MM57436 National É j I Semiconductor MM57436 Decimal/Binary Up/Down Counter General Description Features The MM57436 Counter, an NMOS silicon gate technology device, is designed to be a minimal solution Decimal/ Binary Up/Down counter with display capability. The	OCR Scan	PDF	MM57436 MM57436 32-bit) 16-Bit multiplexed 4-digit seven segment led display 5 Digit led UP-DOWN COUNTER
til 701 Abstract: photodiode die WAFER MAGNATEC LATERAL MOSFET magnatec mosfets depletion mode mosfet 100 MHz semefab Power MOSFET Wafer pps 501 semelab mosfet lateral Text: til// 'rr* 'WWr Semefab SILICON DESIGN — WAFER FABRICATION SEMEFAB SCOTLAND LTD. is the Group's wafer fabrication facility based in Glenrothes, Fife. Located adjacent to Compugraphics, Europe's largest independent mask manufacturer, SEMEFAB has a capacity of	OCR Scan	PDF	100mm 10OOnm til 701 photodiode die WAFER MAGNATEC LATERAL MOSFET magnatec mosfets depletion mode mosfet 100 MHz semefab Power MOSFET Wafer pps 501 semelab mosfet lateral

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DEPLETION NMOS Search Results

DEPLETION NMOS Result Highlights (5)

DEPLETION NMOS Datasheets Context Search

IXTA02N100D2

NTE2102

FET pair n-channel p-channel

220vac LED driver

"RF MOSFETs"

"RF MOSFETs"

SiC JFET

NMOS depletion pspice model

CMOS

486DX-CPU

0.6 um cmos process

0.18 um CMOS Process

depletion MOSFET SPICE

0.18 um CMOS parameters

Spice Model for TMOS Power MOSFETs

CMOS Process Family

relay 12v 200 ohm

CMOS Process Family

Untitled

8288 bus controller interfacing with 8086

IC 2267

IC 2267

multiplexed 4-digit seven segment led display

til 701