DGE MICRO Search Results

DGE MICRO Result Highlights (5)

Part	Manufacturer	Description
TMPM3HMFYAFG	Toshiba Electronic Devices & Storage Corporation	Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003
TMPM3HPFYADFG	Toshiba Electronic Devices & Storage Corporation	Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001
TMP89FS60AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E
TMP89FS63AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65
TMPM3HLFYAUG	Toshiba Electronic Devices & Storage Corporation	Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003

DGE MICRO Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TMS465169, TMS465169P 4194304 BY 16ĆBIT EXTENDED DATA OUT DYNAMIC RANDOMĆACCESS MEMORIES SMHS566B − JUNE 1997 − REVISED APRIL 1998 DGE PACKAGE TOP VIEW D Organization . . . 4 194 304 by 16 Bits D Single 3.3-V Power Supply (± 0.3 V Tolerance) VCC	Original	TMS465169, TMS465169P SMHS566B 46x169/P-50 46x169/P-60 TMS46x169P)	PDF
TMS465169 Abstract: TMS465169P Text: TMS465169, TMS465169P 4194304 BY 16ĆBIT EXTENDED DATA OUT DYNAMIC RANDOMĆACCESS MEMORIES SMHS566B − JUNE 1997 − REVISED APRIL 1998 D Organization . . . 4 194 304 by 16 Bits D Single 3.3-V Power Supply ± 0.3 V DGE PACKAGE ( TOP VIEW Tolerance) D Performance Ranges:	Original	TMS465169, TMS465169P 16BIT SMHS566B 46x169/P-50 46x169/P-60 TMS46x169P) TMS465169 TMS465169P	PDF
Untitled Abstract: No abstract text available Text: UNISONICTECHNOLOGIESCO., LTD TDA7297 LINEAR INTEGRATED CIRCUIT 1 0 +1 0 W DU AL BRI DGE AM PLI FI ER  DESCRI PT I ON The UTC TDA7297 is a dual bridge amplifier, it uses UTC advanced technology to provide customers with wide supply voltage, stand-by function, mute function, thermal overload	Original	TDA7297 TDA7297 HZIP-15D TDA7297L-J15-D-T TDA7297G-J15-D-T QW-R105-044	PDF
RF6026EA Abstract: polar modulator fractional N PLL rf6026 GMSK modulator GSM Transceiver dcr gmsk transceiver DAC CORDIC SSB Modulator RF602 Text: RF6026EA/GA Quad-Band GSM/GPRS/E DGE Transceiver Module RF6026EA/GA Proposed QUAD-BAND GSM/GPRS/EDGE TRANSCEIVER MODULE RX EN SSB SDI SCLK LDTO E2 F3 C2 G4 F4 F5 G3 RX1900 A6 SAW / LNA Matching General Purpose Outputs Digital LO LNA4 RXEN Features Frac-N Digital GMSK Modulator	Original	RF6026EA/GA RX1900 RX900 DSB060918 RF6026EA polar modulator fractional N PLL rf6026 GMSK modulator GSM Transceiver dcr gmsk transceiver DAC CORDIC SSB Modulator RF602	PDF
TDA7266 Abstract: TDA7266L Text: UNISONICTECHNOLOGIESCO., LTD TDA7266 LINEAR INTEGRATED CIRCUIT 7 +7 W DU AL BRI DGE AM PLI FI ER ̈ DESCRI PT I ON HZIP-15A The UTC TDA7266 is a 7+7W dual bridge amplifier specially designed for TV and Portable Radio applications. ̈ FEAT U RES * Wide Supply Voltage Range 3 ~ 18V	Original	TDA7266 HZIP-15A TDA7266 HZIP-15B HZIP-15D TDA7266L-J15-A-T TDA7266G-J15-A-T TDA7266L-J15-B-T TDA7266G-J15-B-T TDA7266L-J15-D-T TDA7266L	PDF
TMS626162A Abstract: No abstract text available Text: TMS626162A 524ā288 BY 16ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS692B − JULY 1997 − REVISED MARCH 1998 D Organization D D D D D D D D D D D D D D D DGE PACKAGE TOP VIEW 512K x 16 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)	Original	TMS626162A 16BIT SMOS692B 100-MHz TMS626162A	PDF
TMS626162A Abstract: No abstract text available Text: TMS626162A 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS692B – JULY 1997 – REVISED MARCH 1998 D D D D D D D D D D D D D D D D DGE PACKAGE TOP VIEW Organization 512K x 16 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)	Original	TMS626162A 16-BIT SMOS692B 100-MHz TMS626162A	PDF
TMS626812 Abstract: No abstract text available Text: TMS626812A 1 048 576 BY 8ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS691B − JULY 1997 − REVISED APRIL 1998 D Organization D D D D D D D D D D D D D D D D TMS626812A DGE PACKAGE TOP VIEW 1M Words x 8 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)	Original	TMS626812A SMOS691B 100-MHz TMS626812	PDF
TMS626812A Abstract: TMS626812 Text: TMS626812A 1 048 576 BY 8ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS691B − JULY 1997 − REVISED APRIL 1998 D Organization D D D D D D D D D D D D D D D D TMS626812A DGE PACKAGE TOP VIEW 1M Words x 8 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)	Original	TMS626812A SMOS691B 100-MHz TMS626812A TMS626812	PDF
TMS626812B Abstract: TMS626812 Text: TMS626812B 1 048 576 BY 8ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORIES SMOS693A − OCTOBER 1997 − REVISED APRIL 1998 D Organization D D D D D D D D D D D D D D D D D TMS626812B DGE PACKAGE TOP VIEW 1048576 by 8 Bits by 2 Banks 3.3-V Power Supply (± 10% Tolerance)	Original	TMS626812B SMOS693A 125-MHz TMS626812B TMS626812	PDF
frequency divider organs Abstract: S10130 electronic organ Text: S10130 AMERICAN MICROSYSTEMS, INC.I Features General Description □ Contains Six Binary D ividers □ T riggers on N egative-G oing E dge □ H igh Impedance Inputs The S10130 is a monolithic frequency divider circuit fabricated with P-Channel ion-implanted MOS technology.	OCR Scan	S10130 S10130 frequency divider organs electronic organ	PDF
SMOS182 Abstract: No abstract text available Text: TMS626802, TMS636802 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS182 - FEBRUARY 1994 TM S626802 LVTTL DGE PACKAGE (TO P VIE W ) 3.3-V Power Supply (10% Tolerance) Two Banks for On-Chip Interleaving (Gapless Accesses) vcc [ 1	OCR Scan	TMS626802, TMS636802 1048576-WORD SMOS182 100-MHz S626802	PDF
TMS6264 Abstract: TMS626812 Text: TMS626412A, TMS626812A 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS691A - JULY 1997 - REVISED OCTOBER 1997 TMS626412A DGE PACKAGE TOP VIEW 3.3-V Power Supply (±10% Tolerance) Two Banks for On-Chip Interleaving	OCR Scan	TMS626412A, TMS626812A SMOS691A 100-MHz R-PDSO-G44) TMS6264 TMS626812	PDF
1995 AND sdram AND Abstract: No abstract text available Text: TMS626162 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS683E - FEBRUARY 1995 - REVISED APRIL 1997 Organization . . . 512K x 16 x 2 Banks 3.3-V Power Supply ±10% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses) DGE PACKAGE	OCR Scan	TMS626162 16-BIT SMOS683E 83-MHz 1995 AND sdram AND	PDF

pjuaa Abstract: 1993 SDRAM 7216B Text: 16 777 216 BIT SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY S M 0 S6 82-J A N U A R Y 1993 DGE PACKAG ET TOP VIEW Organization. . . 1M x 8 x 2 Banks 3.3 V-Power Supply (10% Tolerance) Two Banks For On-Chip Interleaving (Gapless Accesses) * High Bandwidth - Up to 100-MHz Data	OCR Scan	40must pin35must SDRAM-15 pjuaa 1993 SDRAM 7216B	PDF
frequency divider organs Abstract: S10129 Text: AMI S10129 AMERICAN MICROSYSTEMS, INC. Features General Description □ Contains S even Binary D ividers □ T riggers on N egative-G oing E dge □ H igh Im pedance Inputs T he S10129 is a m onolithic freq u e n c y d iv id e r circu it fa b ric ate d w ith P-Channel ion-im planted MOS technology.	OCR Scan	S10129 S10129 S101290 frequency divider organs	PDF
Untitled Abstract: No abstract text available Text: SMJ626162 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY S G M S 737B -JU LY 1997-R E V IS E D APRIL 1998 Organization 512K x 16 Bits x 2 Banks 3.3-V Power Supply ±5% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses) DGE+/HKD PACKAGE	OCR Scan	SMJ626162 16-BIT 1997-R 83-MHz	PDF
C108 Abstract: DGE MICRO C108D2 C108F1 C108Q1 C108Q2 C108Q3 C108Q4 C108U C108Y2 Text: DIGITRON O ELECTRONIC R e f e r e n c e Mb, CORP 3bE D 5fl4EtiD7 ODDODIM 3 ?< *> £ S a 6 tty '23 03 SiHcon Controlled Rectifier d^ . T v^ S'/S DGE Flat Pack Design Model C108 Up to 600 Volts 5 Amperes RM$j M A X IM U M A L L O W A B L E R A T IN G S C108	OCR Scan	C108Q1, C108Q2, C108Q3, C108Q4 C108Y1, C108Y2, C108Y3, C108Y4 C108F1, C108F2, C108 DGE MICRO C108D2 C108F1 C108Q1 C108Q2 C108Q3 C108U C108Y2	PDF
C108F1 Abstract: "Silicon Controlled Rectifier" C108 C108F2 C108Q1 C108Q2 C108Q3 C108Q4 C108Y1 C108Y2 Text: DIGITRON ELECTRONIC CORP R e fe r e n c e J fb , 3hE D EflMEbD? a a D o a m 3 DGE $ A 6 TTY'2'3 O 0 3 Silicon Controlled Rectifier y T - J 5-/5 Flat Pack Design I,*»?,.rt M o d e l C 10 8 Up to 600 Volts 5 Amperes RM$j MAXIMUM ALLOW ABLE RATINGS c ía s	OCR Scan	C108Q1, C108Q2, C108Q3, C108Q4 C108Y1, C108Y2, C108Y3, C108Y4 C108F1, C108F2, C108F1 "Silicon Controlled Rectifier" C108 C108F2 C108Q1 C108Q2 C108Q3 C108Q4 C108Y1 C108Y2	PDF
C107 Abstract: SK 1117 11 ak 30 a4 C1071 "Silicon Controlled Rectifier" ME 1117 C-107 Text: DIGITRON ELECTRONIC CORP R e fe re n ce No. 3t,E D Xrê_1?:'é DGE SA-0.1-TY2 3 f O Q ,B i' y o "° 3 Silicon Controlled Rectifier cV Flat PackDesign 5 • Model C107 Up to 600 Volts 4 Amperes RMS C107 M A X IM U M A LLO W A BLE R A T IN G S R epetitive P eak O ff-Stale	OCR Scan	CI07YI 007V2 I07V4 CIH70 CI07C C1071 C1071- O07MI CI07M4 50iUsec. C107 SK 1117 11 ak 30 a4 C1071 "Silicon Controlled Rectifier" ME 1117 C-107	PDF
N07A Abstract: C107 digitron Text: DIGITRON ELECTRONIC CORP R e f e r e n c e No. afiMStiD? GD0DD13 1 • DGE 3bE D TVS-if fo o ,a SAG.1TVÏ2 3 ;r . i' O - 0 3 w / Silicon Controlled Rectifier 'J w Flat Pack Design * Model C107 Up to 600 Volts 4 Amperes RMS CIO 7 M A X IM U M A L L O W A B L E R A T IN G S	OCR Scan	GDGDG13 1TY23. V111IM CI0704 CI07YI CI07Y2 CI07Y UI07Y4 CI07I CI07I-4 N07A C107 digitron	PDF
C106F2 Abstract: C106Y1 C106MI C106D1 c106f C106F1 C106Q1 C106M3 C106D2 C106Y4 Text: TjlGITRON ELECTRONIC CORP 3bE D • SflMgbO? □O DO Oi a~ T DGE _T’£ 5>/?_ R e f e r e n c e No. 'sÄ'0^ir.Y23 ■ .O - Silicon Controlled Rectifier r* gf o' Flat Pack Design V-'S Op to 600 Volts 4 Amperes RMS M A X IM U M C106 J 'Tj, Model C106 -u U W A B L E R A T IN G S	OCR Scan	C106Q1, C106Q2, C106Q3, C106Q4 C106Y1, C106Y2, C106Y3, C106Y4 C106F1, C106F2, C106F2 C106Y1 C106MI C106D1 c106f C106F1 C106Q1 C106M3 C106D2	PDF
Untitled Abstract: No abstract text available Text: a Am7990 Local Area Network Controller for Ethernet LANCE Advanced Micro Devices DISTINCTIVE CHARACTERISTICS C om patible w ith Ethernet and IEEE-802.3 10Base5 Type A, and 10Base2 Type B, "C h e a p e rn e t") Easily interfaced to 8086, 68000, Z 8 0 0 0 , LSI-M™	OCR Scan	Am7990 IEEE-802 10Base5 10Base2 24-bit 07644B	PDF
Untitled Abstract: No abstract text available Text: APR 2 2 19« 57, SGS-THOMSON IMS 1635 • y 8K X 8 CMOS SRAM VERY HIGH SPEED DOUBLE METAL CM OS SRAM ADVANCED PR O C ESS- 1.2 MICRON DESIGN RULES 8 K x 8 BIT ORGANISATION 15, 20, 25, 35ns ADDRESS ACCESS TIMES 15, 20, 25, 35ns CHIP ENABLE ACCESS TIMES 28 FULLY TTL COMPATIBLE	OCR Scan	PDIP28 PSOJ28	PDF

Privacy Settings

DGE MICRO Search Results

DGE MICRO Result Highlights (5)

DGE MICRO Datasheets Context Search

Untitled

TMS465169

Untitled

RF6026EA

TDA7266

TMS626162A

TMS626162A

TMS626812

TMS626812A

TMS626812B

frequency divider organs

SMOS182

TMS6264

1995 AND sdram AND

pjuaa

frequency divider organs

Untitled

C108

C108F1

C107

N07A

C106F2

Untitled

Untitled